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Doktorsavhandling, sammanläggning: Optical characterization of Silicon-based self-assembled nanostructures
  Bouchaib Adnane

Doktorsavhandling, sammanläggning: Si-based structures for light emission and detection  PDF
  Amir Karim

Doktorsavhandling, sammanläggning: Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy  PDF
  Ming Zhao

Doktorsavhandling, sammanläggning: Near-infrared photodetectors based on Si/SiGe nanostructures  PDF
  Anders Elfving

Artikel i tidskrift: Observation of a Charge Transfer State in Low-Bandgap Polymer/Fullerene Blend Systems by Photoluminescence and Electroluminescence Studies
  Yi Zhou, Kristofer Tvingstedt, Fengling Zhang, Chunxia Du, Wei-Xin Ni, Mats R Andersson, Olle Inganäs

Manuskript (preprint): Photoluminescence excitation spectroscopy of self-assembled SiGe/Si quantum dots
  Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz, Wei-Xin Ni

Artikel i tidskrift: Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots  PDF
  Mats Larsson, Per-Olof Holtz, Anders Elfving, Göran Hansson, Wei-Xin Ni

Artikel i tidskrift: Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
  Ming Zhao, Amir Karim, Wei-Xin Ni, C. R. Pidgeon, P. J. Phillips, D. Carder, B. N. Murdin, T. Fromherz, D. J. Paul

Artikel i tidskrift: Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
  Anders Elfving, Ming Zhao, Göran V. Hansson, Wei-Xin Ni

Artikel i tidskrift: Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates
  Ming Zhao, Wei- Xin Ni, P Townsend, S. A. Lynch, D. J. Paul, M. N. Chang, C. C. Hsu

Artikel i tidskrift: Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy  PDF
  Ming Zhao, Göran Hansson, Wei-Xin Ni

Artikel i tidskrift: SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm
  Anders Elfving, Göran V. Hansson, Wei-Xin Ni

Manuskript (preprint): Band alignment studies in Si/Ge quantum dots based on optical and structural investigations
  Mats Larsson, Anders Elfving, Wei-Xin Ni, Göran Hansson, Per-Olof Holtz

Artikel i tidskrift: Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy  PDF
  Mats Larsson, Anders Elfving, Wei-Xin Ni, Göran V. Hansson, Per-Olof Holtz

Konferensbidrag: Characterization of Er/O-doped Si-LEDs with low thermal quenching
  Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson, Göran Hansson

Konferensbidrag: Compositional analysis of Si/SiGe quantum dots using STEM and EDX
  Amir Karim, Anders Elfving, Mats Larsson, Wei-Xin Ni, G. V. Hansson

Konferensbidrag: Efficient near infrared Si/Ge quantum dot photodetector based on a heterojunction bipolar transistor
  Anders Elfving, Mats Larsson, Per-Olof Holtz, Göran V. Hansson, Wei-Xin Ni

Konferensbidrag: Infrared photodetectors based on a Ge-dot/SiGe-well field effect transistor structure
  Anders Elfving, Göran. V. Hansson, Wei-Xin Ni

Konferensbidrag: Asymmetric band alignment at Si/Ge quantum dots studied by luminescence from p-i-n and n-i-p structures
  Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson, Wei-Xin Ni

Konferensbidrag: Si-based Photonic Transistor Devices for Integrated Optoelectronics
  Wei-Xin Ni, Anders Elfving, Mats Larsson, Göran Hansson, Per-Olof Holtz

Konferensbidrag: Size dependent spatial direct and indirect transitions in Ge/Si QDs
  P.F. Gomes, P.F. Gomes, F. Iikawa, F. Iikawa, F. Cerdeira, F. Cerdeira, Mats Larsson, Mats Larsson, Anders Elfving, Anders Elfving, Göran Hansson, Göran Hansson, Wei-Xin Ni, Wei-Xin Ni, Per-Olof Holtz, Per-Olof Holtz

Konferensbidrag: Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni, Göran Hansson

Konferensbidrag: Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni, Göran Hansson

Konferensbidrag: Luminescence Properties of Ge Quantum Dots Produced by MBE at Different Temperatures
  Mats Larsson, Anders Elfving, M.I. Hussain, Per-Olof Holtz, Wei-Xin Ni

Konferensbidrag: Large optical emission blue shift in Ge/Si quantum dots under external biaxial strain
  P F Gomes, F Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni, Per-Olof Holtz, J R Madureira, A García-Cristóbal

Konferensbidrag: Surface diffusion limited nucleation of Ge dots on the Si(001) surface
  Y.-H. Wu, C.-Y. Wang, Anders Elfving, Göran Hansson, Wei-Xin Ni

Konferensbidrag: Feasibility study of 25 V SiGe RF-power transistors for cellular base station output amplifiers
  T. Johansson, Wei-Xin Ni

Konferensbidrag: Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer
  E. Haq, Wei-Xin Ni, Göran Hansson

Konferensbidrag: Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
  Bouchaib Adnane, Anders Elfving, Ming Zhao, Mats Larsson, Bengt Magnuson, Wei-Xin Ni

Artikel i tidskrift: Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments
  P. Rauter, T. Fromherz, N.Q. Vinh, B.N. Murdin, J.P. Phillips, C.R. Pidgeon, L. Diehl, G. Dehlinger, D. Gruetzmacher, Ming Zhao, Wei-Xin Ni, G. Bauer

Artikel i tidskrift: Growth and characterization of Ge nanostructures selectively grown on patterned Si
  M.H. Cheng, Wei-Xin Ni, G.L. Luo, S.C. Huang, J.J. Chang, C.Y. Lee

Artikel i tidskrift: Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
  Jia-Min Shieh, Yi-Fan Lai, Wei-Xin Ni, Hao-Chung Kuo, Chih-Yao Fang, Jung Y. Huang, Ci-Ling Pan

Artikel i tidskrift: Suppressing phosphorus diffusion in germanium by carbon incorporation
  G Luo, CC Cheng, CY Huang, SL Hsu, CH Chien, Wei-Xin Ni, CY Chang

Artikel, forskningsöversikt: A Review Of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers
  D.J. Paul, G. Matmon, P. Townsend, J. Zhang, Ming Zhao, Wei-Xin Ni

Artikel i tidskrift: Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy
  Chun-Xia Du, Fabrice Duteil, Göran Hansson, Wei-Xin Ni

Artikel i tidskrift: Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
  Bouchaib Adnane, Fredrik Karlsson, Ming Zhao, Göran Hansson, Per-Olof Holtz, Wei-Xin Ni

Artikel i tidskrift: Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
  Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz, Wei-Xin Ni

Artikel i tidskrift: Toward silicon-based lasers for terahertz sources
  S.A. Lynch, D.J. Paul, P. Townsend, G. Matmon, Z. Suet, R.W. Kelsall, Z. Ikonic, P. Harrison, J. Zhang, D.J. Norris, A.G. Cullis, C.R. Pidgeon, P. Murzyn, B. Murdin, M. Bain, H.S. Gamble, Ming Zhao, Wei-Xin Ni

Artikel i tidskrift: Type-I optical emissions in GeSi quantum dots
  P.F. Gomes, F. Iikawa, F. Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni, Per-Olof Holtz

Artikel i tidskrift: Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy
  Chun-Xia Du, Wei-Xin Ni, KB Joelsson, F Duteil, Göran Hansson

Artikel i tidskrift: Electronic structure of ultrathin Ge layers buried in Si(100)
  PO Nilsson, S Mankefors, J Guo, J Nordgren, D Debowska-Nilsson, Wei-Xin Ni, Göran Hansson

Artikel i tidskrift: Light emitting SiGe/i-Si/Si: Er
  Wei-Xin Ni, Chun-Xia Du, F. Duteil, Galia Pozina, Göran Hansson

Artikel i tidskrift: Resonant scattering in delta-doped heterostructures
  I.K. Robinson, P.O. Nilsson, D. Debowska-Nilsson, Wei-Xin Ni, Göran Hansson

Konferensbidrag: MBE-based SiGe/Si heterojunction multilayer structures
  K. Li, J. Zhang, D. Liu, Q. Yi, L. Guo, S. Xu, Wei-Xin Ni

Artikel i tidskrift: Efficient 1.54 µm light emission from Si/SiGe/Si: Er
  Chun-Xia Du, F. Duteil, Göran Hansson, Wei-Xin Ni

Artikel i tidskrift: Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
  Göran Hansson, Wei-Xin Ni, Chun-Xia Du, Anders Elfving, F. Duteil

Konferensbidrag: X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (=100 nm) using a low temperature growth step
  Wei-Xin Ni, K. Lyutovich, Jones Alami, Carl Tengstedt, M. Bauer, E. Kasper

Artikel i tidskrift: Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
  F. Duteil, Chun-Xia Du, K.B. Joelsson, Per Persson, Lars Hultman, Galia Pozina, Wei-Xin Ni, Göran Hansson

Artikel i tidskrift: Si/SiGe/Si: Er
  Chun-Xia Du, F. Duteil, Göran Hansson, Wei-Xin Ni

Konferensbidrag: Er/O doped Si1-xGex alloy layers grown by MBE
  F. Duteil, Chun-Xia Du, K. Jarrendahl, Wei-Xin Ni, Göran Hansson

Konferensbidrag: 1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
  Wei-Xin Ni, Chun-Xia Du, F. Duteil, Anders Elfving, Göran Hansson

Artikel i tidskrift: Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy
  CR Pidgeon, PJ Phillips, D Carder, BN Murdin, T Fromherz, DJ Paul, Wei-Xin Ni, Ming Zhao

Artikel i tidskrift: Synthesis design of artificial magnetic metamaterials using a genetic algorithm
  P.Y. Chen, C.H. Chen, H. Wang, J.H. Tsai, Wei-Xin Ni

Artikel i tidskrift: Photoluminescence study of Si/Ge quantum dots
  Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson, Wei-Xin Ni

Artikel i tidskrift: Luminescence study of Si/Ge quantum dots
  Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson, Wei-Xin Ni

Artikel i tidskrift: Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica
  Bouchaib Adnane, Yi-Fan Lai, Jia-Min Shieh, Per-Olof Holtz, Wei-Xin Ni

Artikel i tidskrift: Spatially direct and indirect transitions observed for Si/Ge quantum dots
  Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson, Wei-Xin Ni

Artikel i tidskrift: Photoluminescence Studies of Sn Quantum Dots in Si Grown by MBE
  Amir Karim, G. V. Hansson, Wei-Xin Ni, Per-Olof Holtz, Mats Larsson, H.A. Atwater

Artikel i tidskrift: Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
  Anders Elfving, Amir Karim, Göran V. Hansson, Wei-Xin Ni

Artikel i tidskrift: Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission
  Ming Zhao, Amir Karim, Göran Hansson, Wei-Xin Ni, P Townsend, S A Lynch, D J Paul