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Amphiphilic semiconducting copolymer as compatibility layer for printing polyelectrolyte-gated OFETs
Article in journal
Hiam Sinno, Ha Tran Nguyen, Anders Hägerström, Mats Fahlman, Linda Lindell, Olivier Coulembier, Philippe Dubois, Xavier Crispin, Isak Engquist, Magnus Berggren
Publication Year
Organic electronics, 2013, (14)3, 790-796
Link to Source (DOI)
<p>We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-<em>b</em>-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1 V.</p>