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Si/SiGe/Si: Er
Article in journal
Chun-Xia Du, F. Duteil, Göran Hansson, Wei-Xin Ni
Publication Year
Applied Physics Letters, 2001, (78)12, 1697-1699
Link to Source (DOI)
<p>Si/SiGe/Si:Er:O heterojunction bipolar transistor (HBT) type light-emitting devices with Er3+ ions incorporated in the collector region have been fabricated using a layered structure grown by differential molecular-beam epitaxy. Electroluminescence measurements on processed light-emitting HBTs can be performed in either constant driving current mode or constant applied bias mode, which is an important advantage over conventional Si:Er light-emitting diodes. Intense room-temperature light emission at the Er3+ characteristic wavelength of 1.54 µm has been observed at low driving current density, e.g., 0.1 A cm-2, and low applied bias, e.g., 3 V, across the collector and emitter. © 2001 American Institute of Physics.</p>