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1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
Conference paper
Wei-Xin Ni, Chun-Xia Du, F. Duteil, Anders Elfving, Göran Hansson
Publication Year
Link to Source (DOI)
<p>Two types of Si:Er light emitting devices have been processed and characterized with an aim to efficiently use hot electrons for impact excitation. One is a p+-SiGe/i-Si/n-Si:Er:O/n+-Si tunneling diode with a design favoring electron tunneling from the SiGe valence band to the Si conduction band and subsequent acceleration. Another type of Si:Er light emitters is based on a heterojunction bipolar transistor (HBT) structure containing an Er-doped active layer in the collector. In these devices, one can introduce hot electrons from the HBT emitter in a controlled way with a collector bias voltage prior to the avalanche breakdown to improve the impact excitation efficiency. Intense electroluminescence was observed at 300 K at low current (0.1 A cm-2) and low bias (3 V). An impact cross-section value of 1 × 10-14 cm2 has been estimated, which is a 100-fold increase compared with the values reported from any other type of Er-doped LEDs. © 2001 Elsevier Science B.V.</p>