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Energy level alignment and chemical interaction at Alq3/Co interfaces for organic spintronic devices
Article in journal
Yiqiang Zhan, M.P. de Jong, Fenghong Li, A. Dediu, Mats Fahlman, William R Salaneck
Publication Year
Physical Review B. Condensed Matter and Materials Physics, 2008, (78)4,
Link to Source (DOI)
<p>The electronic structure of the interface between tris(8-hydroxyquinoline) aluminum (Alq3) and cobalt was investigated by means of photoelectron spectroscopy. As demonstrated recently, this interface is characterized by efficient spin injection in organic spintronic devices. A strong interface dipole that reduces the effective work function of cobalt by about 1.5 eV was observed. This leads to a large barrier for hole injection into the highest occupied molecular-orbital (HOMO) level of 2.1 eV, in agreement with a previously proposed model based on electron transport in Co-Alq3 -La0.7 Sr0.3 MnO3 spin valves. Further experimental results indicate that chemical interaction occurs between the Alq3 molecules and the cobalt atoms, while the latter penetrate the Alq3 layer upon vapor deposition of Co atoms. The data presented lead to significant progress in understanding the electronic structure of the Co-on- Alq3 interface and represent a significant step toward the definition of the interface parameters for the efficient spin injection in Alq3 based spin valves. © 2008 The American Physical Society.</p>