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An investigation into ultra-thin pseudobinary oxide (TiO2)(x)(Al2O3)(1-x) films as high-k gate dielectrics
Article in journal
Lei Shi, Jiang Yin, Kuibo Yin, Feng Gao, Yidong Xia, Zhiguo Liu
Publication Year
Applied Physics A, 2008, (90)2, 379-384
Link to Source (DOI)
<p>As potential gate dielectric materials, pseudobinary oxide (TiO2)(x)(Al2O3)(1-x) (0.1 less than= x less than= 0.6) films (TAO) were deposited on Si (100) substrates by pulsed-laser deposition method and studied systematically via various measurements. By a special deposition process, including two separate steps, the TAO films were deposited in the form of two layers. The first layer was deposited at room temperature and the second layer was completed at the substrate temperature of 400 degrees C. Detailed data show that the properties of the TAO films are closely related to the ratio between TiO2 and Al2O3. The existence of the first layer deposited at room temperature can effectively restrain the formation of the interfacial layer. And according to the results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy performed on the films, no other information belonging to the silicon oxide could be observed. For the (TiO2)(0.4)(Al2O3)(0.6) film, the best result has been achieved among all samples and its dielectric constant is evaluated to be about 38. It is valuable for the amorphous TAO film as one of the promising dielectric materials for high-k gate dielectric applications.</p>