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Authors:Kristina Dynefors: Chalmers University of Technology, Sweden
Vincent Desmaris: Chalmers University of Technology, Sweden
Joakim Eriksson: Chalmers University of Technology, Sweden
Per-Åke Nilsson: Chalmers University of Technology, Sweden
Niklas Rorsman: Chalmers University of Technology, Sweden
Herbert Zirath: Chalmers University of Technology, Sweden
Publication title:Research and Development of a SiC Static Induction Transistor
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:074
Abstract:A fabrication process for SiC Static Induction Transistors (SITs) is developed and tested. Simulated and measured results of the device are presented. The complete fabrication process involves only 5 lithography steps, due to the self-aligned process used for mesa, ohmic contacts and gates. This makes the process fast and minimize the risk of process errors. Only optical lithography is used in the process, why dimensions are not optimised. Mesa widths of 2, 3, 4 and 5 µm are processed. Since the process is scalable, better performance can be expected with smaller widths achieved by the use electron beam lithography. Preliminary results indicate FET operation with a maximum current density of 110 mA/mm.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/048/ecp00848p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press, Linköpings universitet

REFERENCE TO THIS PAGE
Kristina Dynefors, Vincent Desmaris, Joakim Eriksson, Per-Åke Nilsson, Niklas Rorsman, Herbert Zirath (2003). Research and Development of a SiC Static Induction Transistor, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=074 (accessed 7/31/2014)