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Authors:Kristina Dynefors: Chalmers University of Technology, Sweden
Vincent Desmaris: Chalmers University of Technology, Sweden
Joakim Eriksson: Chalmers University of Technology, Sweden
Per-Åke Nilsson: Chalmers University of Technology, Sweden
Niklas Rorsman: Chalmers University of Technology, Sweden
Herbert Zirath: Chalmers University of Technology, Sweden
Publication title:Research and Development of a SiC Static Induction Transistor
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:074
Abstract:A fabrication process for SiC Static Induction Transistors (SITs) is developed and tested. Simulated and measured results of the device are presented. The complete fabrication process involves only 5 lithography steps; due to the self-aligned process used for mesa; ohmic contacts and gates. This makes the process fast and minimize the risk of process errors. Only optical lithography is used in the process; why dimensions are not optimised. Mesa widths of 2; 3; 4 and 5 µm are processed. Since the process is scalable; better performance can be expected with smaller widths achieved by the use electron beam lithography. Preliminary results indicate FET operation with a maximum current density of 110 mA/mm.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/048/ecp00848p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press; Linköpings universitet

REFERENCE TO THIS PAGE
Kristina Dynefors, Vincent Desmaris, Joakim Eriksson, Per-Åke Nilsson, Niklas Rorsman, Herbert Zirath (2003). Research and Development of a SiC Static Induction Transistor, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=074 (accessed 10/23/2014)