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Authors:Karine Enze: Chalmers University of Technology, Microwave Electronics Laboratory, Sweden
Jan Grahn: Chalmers University of Technology, Microwave Electronics Laboratory, Sweden
Anders Mellberg: Chalmers University of Technology, Microwave Electronics Laboratory, Sweden
Herbert Zirath: Chalmers University of Technology, Microwave Electronics Laboratory, Sweden
Niklas Rorsman: Chalmers University of Technology, Microwave Electronics Laboratory, Sweden
Publication title:Characterisation of Metamorphic HEMTs for low-noise wideband amplifiers
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:062
Abstract:Metamorphic HEMTs developed by OMMIC have been DC- and RF-characterized. An extrinsic DC transconductance of 770 mS/mm was obtained for a 4x25µm MHEMT. Typical extrinsic unity current cut-off frequency; fT; was 140 GHz with a maximum oscillation frequency of 196 GHz. Broadband three-stage amplifiers utilizing these transistors were designed fabricated and characterized for various frequency bandwidths up to 90 GHz. For the 26-43 GHz bandwidth; the amplifier exhibited a gain of typically 25 dB and a return loss less than 5 db.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/036/ecp00836p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press; Linköpings universitet

REFERENCE TO THIS PAGE
Karine Enze, Jan Grahn, Anders Mellberg, Herbert Zirath, Niklas Rorsman (2003). Characterisation of Metamorphic HEMTs for low-noise wideband amplifiers, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=062 (accessed 10/23/2014)