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Authors:Johan Ankarcrona: Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Klas-Håkan Eklund: Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Lars Vestling: Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Jörgen Olsson: Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Publication title:Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:059
Abstract:High frequency substrate losses for RF LDMOS are analyzed using numerical device simulation. An equivalent circuit model is developed which accurately describes the off-state losses. Based on the simulation and model significant improvements in terms of output resistance are demonstrated, using an optimized device on high resistivity substrate. This is very important in terms of efficiency for RF amplifiers.
Language:English
Keywords:Component; substrate losses, modeling, LDMOS
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/033/ecp00833p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press, Linköpings universitet

REFERENCE TO THIS PAGE
Johan Ankarcrona, Klas-Håkan Eklund, Lars Vestling, Jörgen Olsson (2003). Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=059 (accessed 7/29/2014)