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Authors:Johan Ankarcrona: Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Klas-Håkan Eklund: Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Lars Vestling: Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Jörgen Olsson: Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Publication title:Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:059
Abstract:High frequency substrate losses for RF LDMOS are analyzed using numerical device simulation. An equivalent circuit model is developed which accurately describes the off-state losses. Based on the simulation and model significant improvements in terms of output resistance are demonstrated; using an optimized device on high resistivity substrate. This is very important in terms of efficiency for RF amplifiers.
Language:English
Keywords:Component; substrate losses; modeling; LDMOS
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/033/ecp00833p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press; Linköpings universitet

REFERENCE TO THIS PAGE
Johan Ankarcrona, Klas-Håkan Eklund, Lars Vestling, Jörgen Olsson (2003). Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=059 (accessed 11/1/2014)