Files:DescriptionFile size FormatBrowse
Fulltext0.25 MBPDF (requires Acrobat Reader)Previous | Next
  
Authors:Hans-Olof Vickes: Ericsson Microwave Systems AB, Sweden
Mattias Ferndahl: Ericsson Microwave Systems AB, Sweden \ Chalmers University of Technology, Microwave Electronics Lab, Sweden
Publication title:Noise Parameter Modeling of HEMTs and Nanometer-Scale CMOS Transistors with Gate Leakage Currents
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:058
Abstract:Closed-form expressions for the gate-leakage resistance, Rp and its associated noise temperature, Tp, are presented. Tp represents the noise contribution caused by the gate-current Ig. Both Rp and Tp are expressed as functions of the measured noise parameters Rn, Fmin and Zopt. We present both frequency independent expressions and frequency dependent equations and discuss their accuracy. Unique relationships between the measured noise parameters are discussed in addition to the effect on measurement accuracy, careful de-embedding and physical relevance of the model used. Based on this extended threetemperature noise model [1], we show by measurements on HEMTs and 90 nm CMOS transistors, that we can model Rn, Fmin and Zopt very accurately at least up to 26 GHz. In addition, the CMOS model has been verified by S-parameters up to 62.5 GHz.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/032/ecp00832p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press, Linköpings universitet

REFERENCE TO THIS PAGE
Hans-Olof Vickes, Mattias Ferndahl (2003). Noise Parameter Modeling of HEMTs and Nanometer-Scale CMOS Transistors with Gate Leakage Currents, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=058 (accessed 9/18/2014)