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Authors:Erik Haralson:
Suvar Erdal:
Young-Bin Wang:
Henry H. Radamson:
B. Gunnar Malm:
Mikael Östling:
Publication title:Depletion mode insulating gate 4H-SiC Field Effect Transistor for RF power amplifiers (article not available)
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Article not available
Issue:008
Article No.:055
Language:English
Year:2003
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:
Available:2003-11-06
Publisher:Linköping University Electronic Press, Linköpings universitet

REFERENCE TO THIS PAGE
Erik Haralson, Suvar Erdal, Young-Bin Wang, Henry H. Radamson, B. Gunnar Malm, Mikael Östling (2003). Depletion mode insulating gate 4H-SiC Field Effect Transistor for RF power amplifiers (article not available), GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=055 (accessed 7/28/2014)