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Authors:N. Rorsman: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
P. Å. Nilsson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
J. Eriksson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
K. Andersson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
H. Zirath: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Publication title:Investigation of the scalability of 4H-SiC MESFETs for high frequency applications
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:039
Abstract:This paper presents an investigation of the scalability of 4H SiC MESFETs for high frequency applications by gate length reduction. SiC MESFETs with different gate lengths (0.50, 0.35 and 0.25 µm) and gate types (block- and ?-gates) were processed on the same wafer. The gate width of these devices ranged from 100 to 400 µm. The MESFET structure uses a thin highly doped p-buffer to improve the output conductance and decrease the short channel effect of the MESFET. This resulted in a 20% and 25% increase in extrinsic fT and fmax, and a 12% increase in output power density.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/013/ecp00813p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press, Linköpings universitet

REFERENCE TO THIS PAGE
N. Rorsman, P. Å. Nilsson, J. Eriksson, K. Andersson, H. Zirath (2003). Investigation of the scalability of 4H-SiC MESFETs for high frequency applications, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=039 (accessed 9/3/2014)