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Authors:N. Rorsman: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
P. Å. Nilsson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
J. Eriksson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
K. Andersson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
H. Zirath: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Publication title:Investigation of the scalability of 4H-SiC MESFETs for high frequency applications
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:039
Abstract:This paper presents an investigation of the scalability of 4H SiC MESFETs for high frequency applications by gate length reduction. SiC MESFETs with different gate lengths (0.50; 0.35 and 0.25 µm) and gate types (block- and ?-gates) were processed on the same wafer. The gate width of these devices ranged from 100 to 400 µm. The MESFET structure uses a thin highly doped p-buffer to improve the output conductance and decrease the short channel effect of the MESFET. This resulted in a 20% and 25% increase in extrinsic fT and fmax; and a 12% increase in output power density.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/013/ecp00813p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press; Linköpings universitet

REFERENCE TO THIS PAGE
N. Rorsman, P. Å. Nilsson, J. Eriksson, K. Andersson, H. Zirath (2003). Investigation of the scalability of 4H-SiC MESFETs for high frequency applications, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=039 (accessed 10/25/2014)