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Authors:Erik Danielsson: Department of Microelectronics and Information Technology, KTH, Sweden
Carl-Mikael Zetterling: Department of Microelectronics and Information Technology, KTH, Sweden
Mikael Östling: Department of Microelectronics and Information Technology, KTH, Sweden
Publication title:A high frequency SiC bipolar transistor design optimization using process and device simulations
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:038
Abstract:An optimization of a SiC bipolar high frequency transistor with a regrown extrinsic base is presented. The structure for device simulations was created with process simulations; and investigated the influence of graded base doping; emitter design and an uncovering step after the regrowth. A maximum fMAX of 40 GHz was achieved for the graded base with an isolating uncovering step. The input and output impedances of this transistor are also studied with respect to 30 W operation over a 50 O load.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/012/ecp00812p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press; Linköpings universitet

REFERENCE TO THIS PAGE
Erik Danielsson, Carl-Mikael Zetterling, Mikael Östling (2003). A high frequency SiC bipolar transistor design optimization using process and device simulations, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=038 (accessed 10/20/2014)