| Files: | Description | File size | Format | Browse |
| Fulltext | 0.43 MB | PDF (requires Acrobat Reader) | Previous | Next |
| | |
| Authors: | Gudjón Gudjónsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden |
| | Halldór Ö. Ólafsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden |
| | Per-Åke Nilsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden |
| | Einar Ö. Sveinbjörnsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden |
| | Herbert Zirath: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden |
| Publication title: | 4H-SiC MOSFETs with N2O Grown Gate Oxid |
| Conference: | GigaHertz 2003. Proceedings from the Seventh Symposium |
| Publication type: | Poster |
| Issue: | 008 |
| Article No.: | 036 |
| Abstract: | We report on processing and characterization of lateral n-channel 4H-SiC MOSFETs. We find that growing the gate oxide in nitrous oxide (N2O) ambient results in a significant enhancement of the electron inversion channel mobility. The peak field effect mobility varies between 30 and 90 cm2/Vs in these normally off devices while transistors with a conventional wet or dry gate oxide exhibit mobilities ranging between 1-10 cm2/Vs. The mobility enhancement is correlated with a significant reduction of the density of shallow interface states with energies close to the SiC conduction band edge. This is revealed from capacitancevoltage (C-V) data and thermally stimulated current measurements (TSC). Furthermore, we find that the ohmic contact annealing results in an increase in the density of interface states which most likely results in a reduction of the inversion channel mobility. |
| Language: | English |
| Year: | 2003 |
| No. of pages: | 4 |
| Series: | Linköping Electronic Conference Proceedings |
| ISSN (print): | 1650-3686 |
| ISSN (online): | 1650-3740 |
| File: | http://www.ep.liu.se/ecp/008/posters/010/ecp00810p.pdf |
| Available: | 2003-11-06 |
| Publisher: | Linköping University Electronic Press, Linköpings universitet |
|
| REFERENCE TO THIS PAGE |
Ph.D., Lic. Theses
