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Authors:Gudjón Gudjónsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Halldór Ö. Ólafsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Per-Åke Nilsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Einar Ö. Sveinbjörnsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Herbert Zirath: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Publication title:4H-SiC MOSFETs with N2O Grown Gate Oxid
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Poster
Issue:008
Article No.:036
Abstract:We report on processing and characterization of lateral n-channel 4H-SiC MOSFETs. We find that growing the gate oxide in nitrous oxide (N2O) ambient results in a significant enhancement of the electron inversion channel mobility. The peak field effect mobility varies between 30 and 90 cm2/Vs in these normally off devices while transistors with a conventional wet or dry gate oxide exhibit mobilities ranging between 1-10 cm2/Vs. The mobility enhancement is correlated with a significant reduction of the density of shallow interface states with energies close to the SiC conduction band edge. This is revealed from capacitancevoltage (C-V) data and thermally stimulated current measurements (TSC). Furthermore, we find that the ohmic contact annealing results in an increase in the density of interface states which most likely results in a reduction of the inversion channel mobility.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/posters/010/ecp00810p.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press, Linköpings universitet

REFERENCE TO THIS PAGE
Gudjón Gudjónsson, Halldór Ö. Ólafsson, Per-Åke Nilsson, Einar Ö. Sveinbjörnsson, Herbert Zirath (2003). 4H-SiC MOSFETs with N2O Grown Gate Oxid, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=036 (accessed 7/25/2014)