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| Authors: | R. Jonsson: Swedish Defence Research Agency (FOI), Sweden \ Department of Physics, Linköping University, Sweden |
| | S. Rudner: Swedish Defence Research Agency (FOI), Sweden \ Department of Physics, Linköping University, Sweden |
| | C. Harris: Advanced Microwave Device Solutions AB, Sweden |
| | A. Konstantinov: Advanced Microwave Device Solutions AB, Sweden |
| Publication title: | Design and characterization of a broadband SiC power amplifier |
| Conference: | GigaHertz 2003. Proceedings from the Seventh Symposium |
| Publication type: | Poster |
| Issue: | 008 |
| Article No.: | 033 |
| Abstract: | Due to the proximity of military and civilian bands at the relevant frequencies low frequency radar and EW systems needs amplifiers which combine a broadband coverage, a high output power and efficiency with a good linearity. The wide bandgap semiconductors SiC and GaN offer an impressive RF and microwave power-frequency capability [1] but relatively few SiC transistor amplifiers have been designed for frequencies below 500 MHz. Recently, however, F Villard et al. described a SiC MESFET with an output power of 37,5 W, a gain of 8 dB, an efficiency in class AA-B of 55% at 500MHz [2]. The IMD3 level with 10-dB back-off from the 1 dB compression point and a 1 MHz frequency offset between tones was – 35dB. Using 10W Lateral Epitaxy SiC MESFET power transistors fabricated at AMDS AB we have done a preliminary design and characterization of a wideband 100 – 500 MHz SiC-based power amplifier. The amplifier is designed for a broadband multifunction EW system. |
| Language: | English |
| Year: | 2003 |
| No. of pages: | 4 |
| Series: | Linköping Electronic Conference Proceedings |
| ISSN (print): | 1650-3686 |
| ISSN (online): | 1650-3740 |
| File: | http://www.ep.liu.se/ecp/008/posters/007/ecp00807p.pdf |
| Available: | 2003-11-06 |
| Publisher: | Linköping University Electronic Press, Linköpings universitet |
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