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Authors:Mattias Ingvarson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Arne Øistein Olsen: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Erik Kollberg: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Jan Stake: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Publication title:Heterostructure barrier varactor frequency triplers and quintuplers for THz electronics
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Abstract and Fulltext
Issue:008
Article No.:018
Abstract:A fixed tuned tripler and a quintupler using the Heterostructure Barrier Varactor (HBV) diode are presented. The tripler utilise a novel arrangement of antipodal finline; for waveguide to microstrip transition; and microstrip elements for the diode matching. An output power of -0.8 dBm at 128 GHz was measured for the tripler; which is close to the simulated performance. For the quintupler; an output power of 5.6 dBm at 98 GHz is predicted when ideal circuit elements are used.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/018/ecp00818.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press; Linköpings universitet

REFERENCE TO THIS PAGE
Mattias Ingvarson, Arne Øistein Olsen, Erik Kollberg, Jan Stake (2003). Heterostructure barrier varactor frequency triplers and quintuplers for THz electronics, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=018 (accessed 11/1/2014)