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| Authors: | Anders Mellberg: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden |
| | Per-Åke Nilsson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden |
| | Niklas Rorsman: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden |
| | Jan Grahn: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden |
| | Herbert Zirath: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden |
| Publication title: | 50-nm gate-length InP-based HEMTs for millimeterwave applications |
| Conference: | GigaHertz 2003. Proceedings from the Seventh Symposium |
| Publication type: | Abstract and Fulltext |
| Issue: | 008 |
| Article No.: | 017 |
| Abstract: | InP-based HEMT technology presents substantial performance advantages for millimeter wave applications such as high-speed wireless communications, radio astronomy, and radar. We report on the development of a 50-nm gate-length process for millimeter wave InP HEMTs. The gate patterns were defined using a single electron beam exposure and a bi-layer resist system. The process was evaluated on pseudomorphic InAlAs/InGaAs/InP HEMT material. A two-finger, 100 µm gate-width device showed an extrinsic DC peak transconductance of 650 mS/mm at Vds = 1.0 V. At the same drain bias, the transit frequency and the maximum frequency of oscillation were 180 and 230 GHz respectively. The developed 50-nm process constitutes the new baseline for the InP MMIC process at the Microwave Electronics Laboratory at Chalmers. |
| Language: | English |
| Year: | 2003 |
| No. of pages: | 4 |
| Series: | Linköping Electronic Conference Proceedings |
| ISSN (print): | 1650-3686 |
| ISSN (online): | 1650-3740 |
| File: | http://www.ep.liu.se/ecp/008/017/ecp00817.pdf |
| Available: | 2003-11-06 |
| Publisher: | Linköping University Electronic Press, Linköpings universitet |
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