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Authors:Anders Mellberg: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Per-Åke Nilsson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Niklas Rorsman: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Jan Grahn: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Herbert Zirath: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Publication title:50-nm gate-length InP-based HEMTs for millimeterwave applications
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Abstract and Fulltext
Issue:008
Article No.:017
Abstract:InP-based HEMT technology presents substantial performance advantages for millimeter wave applications such as high-speed wireless communications, radio astronomy, and radar. We report on the development of a 50-nm gate-length process for millimeter wave InP HEMTs. The gate patterns were defined using a single electron beam exposure and a bi-layer resist system. The process was evaluated on pseudomorphic InAlAs/InGaAs/InP HEMT material. A two-finger, 100 µm gate-width device showed an extrinsic DC peak transconductance of 650 mS/mm at Vds = 1.0 V. At the same drain bias, the transit frequency and the maximum frequency of oscillation were 180 and 230 GHz respectively. The developed 50-nm process constitutes the new baseline for the InP MMIC process at the Microwave Electronics Laboratory at Chalmers.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/017/ecp00817.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press, Linköpings universitet

REFERENCE TO THIS PAGE
Anders Mellberg, Per-Åke Nilsson, Niklas Rorsman, Jan Grahn, Herbert Zirath (2003). 50-nm gate-length InP-based HEMTs for millimeterwave applications, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=017 (accessed 9/17/2014)