Files:DescriptionFile size FormatBrowse
Fulltext0.24 MBPDF (requires Acrobat Reader)Previous | Next
  
Authors:A. Kerlain: Thales Research and Technology, Sweden
E. Morvan: Thales Research and Technology, Sweden
C. Dua: Thales Research and Technology, Sweden
N. Caillas: Thales Research and Technology, Sweden
C. Brylinski: Thales Research and Technology, Sweden
Publication title:Recent Results from SiC Research Project at Thales: Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SIC Mesfets
Conference:GigaHertz 2003. Proceedings from the Seventh Symposium
Publication type: Abstract and Fulltext
Issue:008
Article No.:002
Abstract:Several passivation schemes on 4H-SiC MESFETs have been studied. Two main configurations are compared. MESFET structures with thin passivation layer or no passivation layer (Configuration 1) exhibit high breakdown voltage but also current instability after high voltage Vds stress. Thick SiO2 passivation covering the gate (Configuration 2) improves the current stability but yields lower breakdown voltage and higher gate leakage current. Surface trapping effects are considered as the main cause of the observed phenomena.
Language:English
Year:2003
No. of pages:4
Series:Linköping Electronic Conference Proceedings
ISSN (print):1650-3686
ISSN (online):1650-3740
File:http://www.ep.liu.se/ecp/008/002/ecp00802.pdf
Available:2003-11-06
Publisher:Linköping University Electronic Press, Linköpings universitet

REFERENCE TO THIS PAGE
A. Kerlain, E. Morvan, C. Dua, N. Caillas, C. Brylinski (2003). Recent Results from SiC Research Project at Thales: Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SIC Mesfets, GigaHertz 2003. Proceedings from the Seventh Symposium http://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=002 (accessed 9/1/2014)