Article | Proceedings of the 2nd Japanese Modelica Conference Tokyo, Japan, May 17-18, 2018 | Modelling silicon carbide based power electronics in electric vehicles as a study of the implementation of the semiconductor devices using Dymola Linköping University Electronic Press Conference Proceedings
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Title:
Modelling silicon carbide based power electronics in electric vehicles as a study of the implementation of the semiconductor devices using Dymola
Author:
Leonard Janczyk: Dassault Systèmes, Germany Yoshihisa Nishigori: ROHM Co., Ltd., Japan Yasuo Kanehira: Dassault Systèmes, Japan
DOI:
10.3384/ecp18148147
Download:
Full text (pdf)
Year:
2018
Conference:
Proceedings of the 2nd Japanese Modelica Conference Tokyo, Japan, May 17-18, 2018
Issue:
148
Article no.:
021
Pages:
147-154
No. of pages:
8
Publication type:
Abstract and Fulltext
Published:
2019-02-21
ISBN:
978-91-7685-266-8
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press, Linköpings universitet


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In a joint effort, Dassault Systèmes and Rohm Semiconductor demonstrate how the introduction of silicon carbide (SiC) as a base material in power electronics improves the energy efficiency of a typical electric vehicle. As an application example simulation models of an electric drive and an electric vehicle are chosen.

Keywords: Power electronics, inverter, electric vehicles, Silicon carbide semiconductor, Dymola, Electrified Powertrains Library

Proceedings of the 2nd Japanese Modelica Conference Tokyo, Japan, May 17-18, 2018

Author:
Leonard Janczyk, Yoshihisa Nishigori, Yasuo Kanehira
Title:
Modelling silicon carbide based power electronics in electric vehicles as a study of the implementation of the semiconductor devices using Dymola
DOI:
http://dx.doi.org/10.3384/ecp18148147
References:

Patrick Denz, Thomas Schmitt, Markus Andres. Behavioral Modeling of Power Semiconductors in Modelica. Proceedings of the 10th International Modelica Conference, Lund, Sweden, 2014. doi:10.3384/ECP14096343

Rohm Co., Ltd. SiC Power Module BSM120D12P2C005. Data sheet. 2016.09 – Rev C. 2016.

Thomas Schmitt, Markus Andres, Stephan Ziegler, Stephan Diehl. A Novel Proposal on how to Parameterize Models in Dymola Utilizing External Files under Consideration of a Subsequent Model Export using the Functional Mock-Up Interface. Proceedings of the 11th International Modelica Conference, Versailles, France, 2015. doi:10.3384/ecp1511823

T. Nakamura, Y. Nakano, T. Hanada. Advanced SiC Power Devices and Their Prospects. 4_S10_5, VOL. 3, IEE-Japan Industry Applications Society Conference, Japan, 2015.

K. Tanaka, S. Kyogoku, R. Iijima, S. Harada. Impact of the trench bottom shielding region on switching characteristics in SiC Double-trench MOSFETs. 4-010 Annual Meeting of the IEEJ 2018.

T. Nagano, K. Matsubara, H. Takubo, A. Toba. Suppression of Surge Voltage by Active Gate Driving for SiCMOSFETs. 4-017, Annual Meeting of the IEEJ 2018.

Y. Ogawauchi, K. Nakahara “A Study on High-speed Gate Drive Circuit Using Hybrid Current/Voltage Source ofor SiC-MOSFET” 4-018 Annual Meeting of the IEEJ 2018

Proceedings of the 2nd Japanese Modelica Conference Tokyo, Japan, May 17-18, 2018

Author:
Leonard Janczyk, Yoshihisa Nishigori, Yasuo Kanehira
Title:
Modelling silicon carbide based power electronics in electric vehicles as a study of the implementation of the semiconductor devices using Dymola
DOI:
https://doi.org10.3384/ecp18148147
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