Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Research and Development of a SiC Static Induction Transistor

Title:
Research and Development of a SiC Static Induction Transistor
Author:
Kristina Dynefors: Chalmers University of Technology, Sweden Vincent Desmaris: Chalmers University of Technology, Sweden Joakim Eriksson: Chalmers University of Technology, Sweden Per-åke Nilsson: Chalmers University of Technology, Sweden Niklas Rorsman: Chalmers University of Technology, Sweden Herbert Zirath: Chalmers University of Technology, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
074
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


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A fabrication process for SiC Static Induction Transistors (SITs) is developed and tested. Simulated and measured results of the device are presented. The complete fabrication process involves only 5 lithography steps; due to the self-aligned process used for mesa; ohmic contacts and gates. This makes the process fast and minimize the risk of process errors. Only optical lithography is used in the process; why dimensions are not optimised. Mesa widths of 2; 3; 4 and 5 µm are processed. Since the process is scalable; better performance can be expected with smaller widths achieved by the use electron beam lithography. Preliminary results indicate FET operation with a maximum current density of 110 mA/mm.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Kristina Dynefors, Vincent Desmaris, Joakim Eriksson, Per-åke Nilsson, Niklas Rorsman, Herbert Zirath
Title:
Research and Development of a SiC Static Induction Transistor
References:

[1] R.C. Clarke; R.R. Siergiej; A.K. Agarwal; Brandt; C.D.; Burk; A.A.; Jr.; Morse; A.; Orphanos; P.A.; ”30 W VHF 6H-SiC Power Static Induction Transistor”; Proc. IEEE Cornell Conf. Advanced Concepts in High Speed Semiconductor Device and Circuits; 1995; pp.47-55


[2] J.P. Henning; A. Przadka; M.R. Melloch and J.A. Cooper; Jr.; “A Novel Self-Aligned Fabrication Process for Microwave Static Induction Transistors in Silicon Carbide”; IEEE Electron Device Letters; Vol. 21; No. 12; Dec. 2000


[3] R.C. Clarke and J.W. Palmour; ”SiC Microwave Power Technologies”; Proceedings of the IEEE; Vol. 90; No. 6; Jun. 2002; 987-992.


[4] J.J Wang; H. Cho; E.S. Lambers; S.J. Pearton; M. Östling; C.-M. Zetterling; J.M. Grow; F. Ren; R.J. Schul; and J. Han; “Low bias dry etching of SiC and SiCN in ICP NF3 discharges”; presented at Wide-bandgap semiconductors for high power; high frequency and high temperature; 1998; San Francisco; Materials Research Society; vol. 512; p. 507.


[5] Michael Duane; “TCAD Needs and Applications from a User’s Perspective”; IEICE Trans. Electron; Vol. E82-C; No. 6; June 1999

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Kristina Dynefors, Vincent Desmaris, Joakim Eriksson, Per-åke Nilsson, Niklas Rorsman, Herbert Zirath
Title:
Research and Development of a SiC Static Induction Transistor
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