Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Design; analysis and modelling of heterostructure barrier varactors for sub-millimetre wave frequency quintuplers

Title:
Design; analysis and modelling of heterostructure barrier varactors for sub-millimetre wave frequency quintuplers
Author:
Mattias Ingarson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Arne Olsen Øistein: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Erik Kollberg: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Jan Stake: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
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Full text (pdf)
Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
063
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


We report on the design; modelling and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with output frequencies in the sub-millimetre wave region. The HBV is a symmetric varactor; thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device; the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the conventional Schottky varactor for high order frequency multiplier circuits. We present analytical models; which can be used to calculate parameters such as optimum doping concentration; layer structure; device area and series resistance for HBVs; as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools; for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency to 500 GHz for a planar; six-barrier InGaAs HBV of more than 30 %.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Mattias Ingarson, Arne Olsen Øistein, Erik Kollberg, Jan Stake
Title:
Design; analysis and modelling of heterostructure barrier varactors for sub-millimetre wave frequency quintuplers
References:

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[4] J. Stake; S. H. Jones; L. Dillner S. Hollung and E. L. Kollberg; “Heterostructure Barrier Varactor Design”; IEEE Transactions on Microwave Theory and Techniques; vol. 48; pp. 677-682; 2000.


[5] M. Sotoodeh; A. H. Khalid; and A. A. Rezazadeh; “Empirical low-field mobility model for III-V compounds applicable in device simulation codes”; Journal of Applied Physics; vol. 87; no. 6; pp. 2890-2900; 2000.


[6] B. Alderman; J.Stake; L. Dillner; D. P. Steenson; M. Ingvarson; E. Kollberg; C. Mann and J. Chamberlain; ”A New Pillar Geometry for Heterostructure Barrier Varactor Diodes”; Twelfth International Symposium on Space Terahertz Technology; 2001.


[7] E. L. Kollberg; J. Stake and L. Dillner; “Heterostructure barrier varactors at submillimetre waves”; Phil. Trans. R. Soc. Lond. vol. 354; pp. 2383-2398; 1996.


[8] L. Dillner; J. Stake and E. L. Kollberg; “Modeling of the Heterostructure Barrier Varactor Diode”; 1997 International Semiconductor Device Research Symposium; Charlottesville; pp. 179-182; 1997.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Mattias Ingarson, Arne Olsen Øistein, Erik Kollberg, Jan Stake
Title:
Design; analysis and modelling of heterostructure barrier varactors for sub-millimetre wave frequency quintuplers
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