Article | GigaHertz 2003. Proceedings from the Seventh Symposium | A Large Signal Model for High Power HBTs and BJTs

Title:
A Large Signal Model for High Power HBTs and BJTs
Author:
I. Angelov: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden M. Ferndahl: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden F. Ingvarson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Download:
Full text (pdf)
Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
060
No. of pages:
5
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


A new; simple large signal model for high power HBTs and BJTs suitable for CAD tools is proposed and experimentally evaluated. The major features of the model are that main model parameters are determined directly from measurements in typical operating conditions and that the model exhibits good convergence properties. The model was evaluated with extensive DC; S parameter; and power spectrum measurements. Good correspondence was obtained between measurements and simulations.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
I. Angelov, M. Ferndahl, F. Ingvarson
Title:
A Large Signal Model for High Power HBTs and BJTs
References:

1. R. Anholt; "Electrical and Thermal Characterization of MESFET’s HEMTs; and HBTs;" Artech House; Boston; 1995.1


2. C. McAndrew et al;"VBIC95; The Vertical Bipolar Inter Company Model;” IEEE J. SSC; Vol. 31; N. 10; Oct. 1996; pp.1475-1483


3. J. Scott; " Nonlinear III-V HBT Compact Models: Do we have what we need?” 2001 IEEE MTTS Digest; pp. 663-666.


4. D. Pehlke; D. Pavlidis; "Evaluation of the factors Determining HBT High Frequency Performance by Direct Analysis of Sparameter Data;" IEEE Trans; on MTT; Vol. 40; N. 12; Dec. 1992; pp. 2367-2373.


5. D. Teeter; W. Curtice;" Comparison of Hybrid Pi and Tee HBT Circuit Topologies and Their Reletionship to Large Signal
Modelling;" 1997 MTTS-Digest; pp.375-378.


6 M. Rudolph; F. Lenk; R. Doerner P. Haymann; "On the Implementation of Transit-Time Effects in Compact HBT Large-Signal Models”; 2002 MTTS-Digest; pp.997-1000.


7. M. Linder; F. Ingvarson; K. Jeppson; J. Grahn; "Extraction of Emitter and base Series Resistances of Bipolar transistors from a Single DC Measurement;" IEEE Trans. On Semiconductor Manufacturing; Vol13; N2; May. 2000 pp.119-125.


8. I. Angelov; K. Choumei and A. Inoue”An empirical HBT large signal model for CAD “; 2002 MTTS-Digest; pp.2137.


9. D. Dawson; A. Gupta;”CW measurement of HBT Thermal Resistance;" IEEE Trans; ED; Vol. 39; N. 10; Oct. 1992; pp.2235.


10. S. Maas; D. Tait;”Parameter-Extraction Method for Heterojunction Bipolar Transistors;" IEEE Microwave and Guided Wave Letters; Vol.2; N. 12; Dec. 1992; pp.502-504.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
I. Angelov, M. Ferndahl, F. Ingvarson
Title:
A Large Signal Model for High Power HBTs and BJTs
Note: the following are taken directly from CrossRef
Citations:
No citations available at the moment