Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS

Title:
Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
Author:
Johan Ankarcrona: Uppsala University, The Ã…ngström Laboratory, Solid State Electronics, Uppsala, Sweden Klas-Håkan Eklund: Uppsala University, The Ã…ngström Laboratory, Solid State Electronics, Uppsala, Sweden Lars Vestling: Uppsala University, The Ã…ngström Laboratory, Solid State Electronics, Uppsala, Sweden Jörgen Olsson: Uppsala University, The Ã…ngström Laboratory, Solid State Electronics, Uppsala, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
059
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


High frequency substrate losses for RF LDMOS are analyzed using numerical device simulation. An equivalent circuit model is developed which accurately describes the off-state losses. Based on the simulation and model significant improvements in terms of output resistance are demonstrated; using an optimized device on high resistivity substrate. This is very important in terms of efficiency for RF amplifiers.

Keywords: Component; substrate losses; modeling; LDMOS

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Johan Ankarcrona, Klas-Håkan Eklund, Lars Vestling, Jörgen Olsson
Title:
Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
References:

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[4] Söderbärg A.; Edholm B.; Olsson J.; Masszi F.; Eklund K.-H. Intergration of a novel high-voltage giga-hertz DMOS transistor into a standard CMOS process. IEDM Tech. Dig. 1995. p. 975-978.


[5] Olsson J.; Rorsman N.; Vestling L.; Fager C.; Ankarcrona J.; Zirath H.; Eklund K.-H. 1 W/mm RF power density at 3.2 GHz for dual-layer RESURF LDMOS transistors. IEEE Electron Device Letters 2002; 23(4): 206-208.


[6] Tin S.F.; Mayram K.; Substrate network modeling for CMOSRF circuit simulation. IEEE 1999 Custom Integrated Circuits 1999. p. 583-586.


[7] Raskin J.-P.; Viviani A.V.; Flandre D.F.; Colinge J.-P. Substrate crosstalk redcing using SOI technology. IEEE Transaction on Electron Devices 1997;44(12):2252-2261.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Johan Ankarcrona, Klas-Håkan Eklund, Lars Vestling, Jörgen Olsson
Title:
Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
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