Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Noise Parameter Modeling of HEMTs and Nanometer-Scale CMOS Transistors with Gate Leakage Currents

Title:
Noise Parameter Modeling of HEMTs and Nanometer-Scale CMOS Transistors with Gate Leakage Currents
Author:
Hans-Olof Vickes: Ericsson Microwave Systems AB, Sweden Mattias Ferndahl: Ericsson Microwave Systems AB, Sweden \ Chalmers University of Technology, Microwave Electronics Lab, Sweden
Download:
Full text (pdf)
Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
058
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


Closed-form expressions for the gate-leakage resistance; Rp and its associated noise temperature; Tp; are presented. Tp represents the noise contribution caused by the gate-current Ig. Both Rp and Tp are expressed as functions of the measured noise parameters Rn; Fmin and Zopt. We present both frequency independent expressions and frequency dependent equations and discuss their accuracy. Unique relationships between the measured noise parameters are discussed in addition to the effect on measurement accuracy; careful de-embedding and physical relevance of the model used. Based on this extended threetemperature noise model [1]; we show by measurements on HEMTs and 90 nm CMOS transistors; that we can model Rn; Fmin and Zopt very accurately at least up to 26 GHz. In addition; the CMOS model has been verified by S-parameters up to 62.5 GHz.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Hans-Olof Vickes, Mattias Ferndahl
Title:
Noise Parameter Modeling of HEMTs and Nanometer-Scale CMOS Transistors with Gate Leakage Currents
References:

[1] R. Reuter; S. Waasen; F. J. Tegude; ”A New Noise Model of HFET with Special Emphasis on Gate- Leakage”; IEEE Electron Device Letters; Vol. 16; No. 2; pp. 74-76; Feb. 1995.


[2] P. K. Ikalainen; ”Extraction of Device Noise Sourcesfrom Measured Data Using Circuit Simulator Software”; IEEE Trans. Microwave Theory and Tech.; Vol. 41; No. 2; Feb. 1993.


[3] S. Pritchett; A. Fernandez; D. Bridges and K. Whelan; “Improved FET Noise Model Extraction Method for Statistical Model Development”; 1995 MTT-S Int. Microwave Symp. Dig.; Vol. 2; pp. 943-946; June 1995.


[4] M. Pospieszalski; “Modeling of Noise Parameters of MESFET´s and MODFET´s and their Frequency and Temperature Dependence”; IEEE Trans. Microwave Theory and Tech.; Vol. 37; pp. 1340-1350; Sept. 1989.


[5] M. Garcia; J. Stenarson; H. Zirath; I. Angelov; ”An Algebraic Method for Noise Parameter Analysis of Temperature Noise Models”; Microwave and Optical Technological Letters; Vol. 17; no. 5; pp. 287-291; 1998.


[6] H. Hillbrand and P. Russer; “An efficient method for computer-aided noise analysis of linear amplifier networks;” IEEE Trans. Circuits Syst.; vol. CAS-23; pp.235-238;Apr.1976.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Hans-Olof Vickes, Mattias Ferndahl
Title:
Noise Parameter Modeling of HEMTs and Nanometer-Scale CMOS Transistors with Gate Leakage Currents
Note: the following are taken directly from CrossRef
Citations:
No citations available at the moment