Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Depletion mode insulating gate 4H-SiC Field Effect Transistor for RF power amplifiers (article not available)

Title:
Depletion mode insulating gate 4H-SiC Field Effect Transistor for RF power amplifiers (article not available)
Author:
Erik Haralson: Suvar Erdal: Young-Bin Wang: Henry H. Radamson: B. Gunnar Malm: Mikael Östling:
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
055
Publication type:
Article not available
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


No abstract available

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Erik Haralson, Suvar Erdal, Young-Bin Wang, Henry H. Radamson, B. Gunnar Malm, Mikael Östling
Title:
Depletion mode insulating gate 4H-SiC Field Effect Transistor for RF power amplifiers (article not available)
References:
No references available

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Erik Haralson, Suvar Erdal, Young-Bin Wang, Henry H. Radamson, B. Gunnar Malm, Mikael Östling
Title:
Depletion mode insulating gate 4H-SiC Field Effect Transistor for RF power amplifiers (article not available)
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