An active recursive filter approach is proposed for the implementaion of an inductorless; tuneable RF filter in BiCMOS. A test circuit was designed and manufactured in a 0.35 Âµm SiGe BiCMOS technology .In simulations; the feasibility of this type of filter was demonstrated and reasonably good performance was obtained. The simulations show a center frequency tuning range from6 GHz to 9.4 GHz and a noise figure of 8.8-10.4 dB depending on center frequency. Gain and Q-value are tunable in a wide range. Simulated IIP-3 and 1-dB compression point is -26 dBm and -34 dBm respectively; simulated at the center frequency 8.5 GHz and with 15 dB gain. Measurements on the fabricated device shows a center frequency tuning range from 6.6 GHz to 10 GHz; i.e. slightly higher center frequencies were measured than the simulated.