Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Prediction of power amplifier intermodulation distortion behavior

Title:
Prediction of power amplifier intermodulation distortion behavior
Author:
Christian Fager: Microwave Electronics Lab., Dept. of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden Herbert Zirath: Microwave Electronics Lab., Dept. of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
040
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


This paper presents an analytical large signal intermodulation distortion (IMD) analysis which allows the origins of IMD in power amplifiers (PAs) to be understood; and the behavior in different classes of operation to be predicted versus input power. Two tone measurements on a 950 MHz RF CMOS PA in different classes of operation are used to illustrate typical behavior and demonstrate application of the method presented.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Christian Fager, Herbert Zirath
Title:
Prediction of power amplifier intermodulation distortion behavior
References:

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[2] S. C. Cripps; RF power amplifiers for wireless communications; ser. Artech House microwave library. Boston: Artech House; 1999.


[3] S. Maas; Nonlinear microwave circuits. Piscataway: IEEE Press; 1997.


[4] C. Fager; “Microwave FET modeling and applications;” Ph.D. Thesis; Chalmers University of Technology; 2003.


[5] N. Carvalho and J. Pedro; “Large- and small-signal IMD behavior of microwave power amplifiers;” IEEE Trans. Microwave Theory Tech.; vol. 47; no. 12; pp. 2364–74; Dec. 1999.


[6] L. R°ade and B. Westergren; Beta : Mathematics handbook. Bromley: Chartwell-Bratt; 1990.


[7] C. Fager; J. Pedro; N. Carvalho; and H. Zirath; “Prediction of IMD in LDMOS transistor amplifiers using a new largesignal model;” IEEE Transactions on Microwave Theory and Techniques; vol. 50; no. 12; pp. 2834–42; Dec. 2002.


[8] F. Fortes and M. J. Ros´ario; “A second harmonic class F power amplifier in standard CMOS technology;” IEEE Trans. Microwave Theory Tech.; vol. 49; no. 6; pp. 1216–20; June 2001.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Christian Fager, Herbert Zirath
Title:
Prediction of power amplifier intermodulation distortion behavior
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