Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Investigation of the scalability of 4H-SiC MESFETs for high frequency applications

Title:
Investigation of the scalability of 4H-SiC MESFETs for high frequency applications
Author:
N. Rorsman: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden P. å. Nilsson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden J. Eriksson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden K. Andersson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden H. Zirath: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
039
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


This paper presents an investigation of the scalability of 4H SiC MESFETs for high frequency applications by gate length reduction. SiC MESFETs with different gate lengths (0.50; 0.35 and 0.25 ¬Ķm) and gate types (block- and ?-gates) were processed on the same wafer. The gate width of these devices ranged from 100 to 400 ¬Ķm. The MESFET structure uses a thin highly doped p-buffer to improve the output conductance and decrease the short channel effect of the MESFET. This resulted in a 20% and 25% increase in extrinsic fT and fmax; and a 12% increase in output power density.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
N. Rorsman, P. å. Nilsson, J. Eriksson, K. Andersson, H. Zirath
Title:
Investigation of the scalability of 4H-SiC MESFETs for high frequency applications
References:

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[2] S. Sriram; G. Augustine; A. A. Burk; R. C. Glass; H. M. Hobgood; P.; A. Orphanos; L. B. Rowland; T. J. Smith; C. D. Brandt; M. C. Driver; and R. H. Hopkins; IEEE Electron Device Lett.; vol. 17; (1996); p. 369.


[3] K. Andersson; J. Eriksson; N. Rorsman; H. Zirath; IEEE Microwave and Wireless Components Letters; vol. 12 (2002); pp.119-121.


[4] H. Honda; M. Ogata; H. Sawazaki; S. Ono; and M. Arai; Materials Science Forum; vols. 433-436 (2003); pp. 745-748.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
N. Rorsman, P. å. Nilsson, J. Eriksson, K. Andersson, H. Zirath
Title:
Investigation of the scalability of 4H-SiC MESFETs for high frequency applications
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