Article | GigaHertz 2003. Proceedings from the Seventh Symposium | A high frequency SiC bipolar transistor design optimization using process and device simulations

Title:
A high frequency SiC bipolar transistor design optimization using process and device simulations
Author:
Erik Danielsson: Department of Microelectronics and Information Technology, KTH, Sweden Carl-Mikael Zetterling: Department of Microelectronics and Information Technology, KTH, Sweden Mikael Östling: Department of Microelectronics and Information Technology, KTH, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
038
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


An optimization of a SiC bipolar high frequency transistor with a regrown extrinsic base is presented. The structure for device simulations was created with process simulations; and investigated the influence of graded base doping; emitter design and an uncovering step after the regrowth. A maximum fMAX of 40 GHz was achieved for the graded base with an isolating uncovering step. The input and output impedances of this transistor are also studied with respect to 30 W operation over a 50 O load.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Erik Danielsson, Carl-Mikael Zetterling, Mikael Östling
Title:
A high frequency SiC bipolar transistor design optimization using process and device simulations
References:

[1] A. Agarwal et al.: Mat. Res. Soc. Symp. Proc. 742 (2003); p. K7.3.1


[2] E. Danielsson; S.-K. Lee; C.-M. Zetterling and M. √Ėstling: J. Electron. Mater. 30 (2001); p. 247


[3] M. Bakowski; U. Gustavsson and U. Lindefelt: Phys. stat. sol. (a) 162 (1997); p. 421


[4] U. Lindefelt: J. Appl. Phys. 84 (1998); p. 2628


[5] S. M. Sze: Modern semiconductor device physics (John Wiley & Sons; New York 1998).


[6] S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons; New York 1981).


[7] E. Danielsson; C.-M. Zetterling; M. Domeij; M. √Ėstling; U. Forsberg and E. Janz√©n: Solid- State Electron. 47 (2003); p. 639

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Erik Danielsson, Carl-Mikael Zetterling, Mikael Östling
Title:
A high frequency SiC bipolar transistor design optimization using process and device simulations
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