Article | GigaHertz 2003. Proceedings from the Seventh Symposium | 4H-SiC MOSFETs with N<sub>2</sub>O Grown Gate Oxid

Title:
4H-SiC MOSFETs with N2O Grown Gate Oxid
Author:
Gudjón Gudjónsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden Halldór ö. Ólafsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden Per-åke Nilsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden Einar ö. Sveinbjörnsson: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden Herbert Zirath: Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
036
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


We report on processing and characterization of lateral n-channel 4H-SiC MOSFETs. We find that growing the gate oxide in nitrous oxide (N2O) ambient results in a significant enhancement of the electron inversion channel mobility. The peak field effect mobility varies between 30 and 90 cm2/Vs in these normally off devices while transistors with a conventional wet or dry gate oxide exhibit mobilities ranging between 1-10 cm2/Vs. The mobility enhancement is correlated with a significant reduction of the density of shallow interface states with energies close to the SiC conduction band edge. This is revealed from capacitancevoltage (C-V) data and thermally stimulated current measurements (TSC). Furthermore; we find that the ohmic contact annealing results in an increase in the density of interface states which most likely results in a reduction of the inversion channel mobility.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Gudjón Gudjónsson, Halldór ö. Ólafsson, Per-åke Nilsson, Einar ö. Sveinbjörnsson, Herbert Zirath
Title:
4H-SiC MOSFETs with N2O Grown Gate Oxid
References:

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5. H. √Ė. √ďlafsson, E. √Ė. Sveinbj√∂rnsson, T. E. Rudenko, V. I. Kilchytska, I. P. Tyagulski, and I. N. Osiyuk, Mater. Sci. Forum 433-436, 547 (2003).

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Gudjón Gudjónsson, Halldór ö. Ólafsson, Per-åke Nilsson, Einar ö. Sveinbjörnsson, Herbert Zirath
Title:
4H-SiC MOSFETs with N2O Grown Gate Oxid
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