Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Design and characterization of a broadband SiC power amplifier

Title:
Design and characterization of a broadband SiC power amplifier
Author:
R. Jonsson: Swedish Defence Research Agency (FOI), Sweden \ Department of Physics, Linköping University, Sweden S. Rudner: Swedish Defence Research Agency (FOI), Sweden \ Department of Physics, Linköping University, Sweden C. Harris: Advanced Microwave Device Solutions AB, Sweden A. Konstantinov: Advanced Microwave Device Solutions AB, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
033
No. of pages:
4
Publication type:
Poster
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


Due to the proximity of military and civilian bands at the relevant frequencies low frequency radar and EW systems needs amplifiers which combine a broadband coverage; a high output power and efficiency with a good linearity. The wide bandgap semiconductors SiC and GaN offer an impressive RF and microwave power-frequency capability [1] but relatively few SiC transistor amplifiers have been designed for frequencies below 500 MHz. Recently; however; F Villard et al. described a SiC MESFET with an output power of 37;5 W; a gain of 8 dB; an efficiency in class AA-B of 55% at 500MHz [2]. The IMD3 level with 10-dB back-off from the 1 dB compression point and a 1 MHz frequency offset between tones was ‚Äď 35dB. Using 10W Lateral Epitaxy SiC MESFET power transistors fabricated at AMDS AB we have done a preliminary design and characterization of a wideband 100 ‚Äď 500 MHz SiC-based power amplifier. The amplifier is designed for a broadband multifunction EW system.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
R. Jonsson, S. Rudner, C. Harris, A. Konstantinov
Title:
Design and characterization of a broadband SiC power amplifier
References:

1. R.C.Clarke and J.W.Palmour; Proceedings of the IEEE; Vol. 90; pp987-992 (2002)


2. F.Villard; J.-P.Prigent; E.Morvan; C.Dua; C.Brylinski; T.Temcamini and P.Pouvil; IEEE Trans MTT; Vol. 51; pp1129- 1134 (2003)


3. A.O. Konstantinov; A.M. Saroukhan; S. Karlsson; C.I.Harris and A. Litwin MRS Symp. Proc. Vol. 640 (2001) p.H4.6.1-H4.6.5.


4. N. Sghaier; G.M. Bluet; A. Souifi; G. Guillot; E. Morvan and C. Brylinski; IEEE Transactions on ED; vol. 50 (2) p. 297-302 (2003)

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
R. Jonsson, S. Rudner, C. Harris, A. Konstantinov
Title:
Design and characterization of a broadband SiC power amplifier
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