Due to the proximity of military and civilian bands at the relevant frequencies low frequency radar and EW systems needs amplifiers which combine a broadband coverage; a high output power and efficiency with a good linearity. The wide bandgap semiconductors SiC and GaN offer an impressive RF and microwave power-frequency capability  but relatively few SiC transistor amplifiers have been designed for frequencies below 500 MHz. Recently; however; F Villard et al. described a SiC MESFET with an output power of 37;5 W; a gain of 8 dB; an efficiency in class AA-B of 55% at 500MHz . The IMD3 level with 10-dB back-off from the 1 dB compression point and a 1 MHz frequency offset between tones was ‚Äď 35dB. Using 10W Lateral Epitaxy SiC MESFET power transistors fabricated at AMDS AB we have done a preliminary design and characterization of a wideband 100 ‚Äď 500 MHz SiC-based power amplifier. The amplifier is designed for a broadband multifunction EW system.