Article | GigaHertz 2003. Proceedings from the Seventh Symposium | 50-nm gate-length InP-based HEMTs for millimeterwave applications

Title:
50-nm gate-length InP-based HEMTs for millimeterwave applications
Author:
Anders Mellberg: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Per-åke Nilsson: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Niklas Rorsman: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Jan Grahn: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Herbert Zirath: Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
017
No. of pages:
4
Publication type:
Abstract and Fulltext
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


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InP-based HEMT technology presents substantial performance advantages for millimeter wave applications such as high-speed wireless communications; radio astronomy; and radar. We report on the development of a 50-nm gate-length process for millimeter wave InP HEMTs. The gate patterns were defined using a single electron beam exposure and a bi-layer resist system. The process was evaluated on pseudomorphic InAlAs/InGaAs/InP HEMT material. A two-finger; 100 ¬Ķm gate-width device showed an extrinsic DC peak transconductance of 650 mS/mm at Vds = 1.0 V. At the same drain bias; the transit frequency and the maximum frequency of oscillation were 180 and 230 GHz respectively. The developed 50-nm process constitutes the new baseline for the InP MMIC process at the Microwave Electronics Laboratory at Chalmers.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Anders Mellberg, Per-åke Nilsson, Niklas Rorsman, Jan Grahn, Herbert Zirath
Title:
50-nm gate-length InP-based HEMTs for millimeterwave applications
References:

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GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Anders Mellberg, Per-åke Nilsson, Niklas Rorsman, Jan Grahn, Herbert Zirath
Title:
50-nm gate-length InP-based HEMTs for millimeterwave applications
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