Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Cryogenic 1.5-4.5 GHz ultra low noise amplifier

Title:
Cryogenic 1.5-4.5 GHz ultra low noise amplifier
Author:
Niklas Wadefalk: California Institute of Technology, Electrical Engineering Dept, USA Anders Mellberg: Chalmers University of Technology, Dept of Microelectronics, Sweden Iltcho Angelov: Chalmers University of Technology, Dept of Microelectronics, Sweden Emmanuil Choumas: Unaxis Trading AG, Truebbach, Switzerland Erik Kollberg: Chalmers University of Technology, Dept of Microelectronics, Sweden Niklas Rorsman: Chalmers University of Technology, Dept of Microelectronics, Sweden Piotr Starski: Chalmers University of Technology, Dept of Microelectronics, Sweden Jörgen Stenarson: Chalmers University of Technology, Dept of Microelectronics, Sweden Herbert Zirath: Chalmers University of Technology, Dept of Microelectronics, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
008
No. of pages:
4
Publication type:
Abstract and Fulltext
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


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This paper describes cryogenic broadband amplifier with very low noise for the frequency band 1.5-4.5 GHz. At 15 K the two-stage InP-based amplifier has a gain of 28+/-2 dB dB and a noise temperature below 5 K. For a narrower band of 2-4 GHz at 15 K the measured gain is 30.0+/-0.8 dB and noise temperature is 1.5 K. The total DC power consumption of the amplifier is 6.8 mW.

Keywords: Cryogenic low noise amplifier; HEMT; InP; noise temperature; LNA

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Niklas Wadefalk, Anders Mellberg, Iltcho Angelov, Emmanuil Choumas, Erik Kollberg, Niklas Rorsman, Piotr Starski, Jörgen Stenarson, Herbert Zirath
Title:
Cryogenic 1.5-4.5 GHz ultra low noise amplifier
References:

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[2] S. Weinreb; R. Lai; N. Erickson; T. Gaier; J. Wielgus; ”W-band InP wideband MMIC LNA with 30 K noisetemperature”; Microwave Symposium Digest; 1999 IEEE MTT-S International ; Volume: 1 ; 1999 pp. 101-104 vol.1


[3] M. W. Pospieszalski; and E. J. Wollack; “Ultra-low-noise; InP field effect transistor radio astronomy receivers: stateof- the-art”; Microwaves; Radar and WirelessCommunications. 2000. MIKON-2000. 13th International Conference on ; Volume: 3 ; 2000 Page(s): 23 -32 vol.3


[4] M.W. Pospieszalski; W.J. Lakatosh;; Lai; R.; Tan; K.L.;Streit; D.C.; Liu; P.H.; Dia; R.M.; Velebir; J.; “Millimeter-wave; cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs”; Microwave Symposium Digest; 1993.; IEEE MTT-S International ; 1993 Page(s): 515 -518 vol.2


[5] R. Lai et al. "A High Volume 0.1 um InP HEMTProduction Process for Applications from 2 GHz to 200 GHz"; Proceedings from 1999 GaAs MANTECH Conference; Vancouver; Canada


[6] E. Choumas; M. Nawaz; H. Zirath; E. L. Kollberg;“Research and development of W-band MMICs based on the CTH InP HEMT process”; Proceedings of GHz 2000Symposium; March 13-14; Göteborg; Sweden; pp 189-192; March 2000


[7] N. Rorsman; M. Garcia; C. Karlsson; and H. Zirath; “Accurate small-signal modeling of HFET’s for millimeterwave applications”; IEEE Trans. on Microwave Theory Tech.; vol. 44 No. 3; pp 432 –437; March 1996


[8] I. Angelov; N. Wadefalk; J. Stenarsson; E. L. Kollberg; P. Starski; H. Zirath; “On the performance of low noise low DC power consumption cryogenic amplifiers”; IEEE Trans. on Microwave Theory Tech.; vol. 50; No 6; pp 1480-1486; June 2002

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Niklas Wadefalk, Anders Mellberg, Iltcho Angelov, Emmanuil Choumas, Erik Kollberg, Niklas Rorsman, Piotr Starski, Jörgen Stenarson, Herbert Zirath
Title:
Cryogenic 1.5-4.5 GHz ultra low noise amplifier
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