Article | GigaHertz 2003. Proceedings from the Seventh Symposium | High-frequency SiGe MMICs - an industrial perspective

Title:
High-frequency SiGe MMICs - an industrial perspective
Author:
Yinggang Li: Ericsson AB, Ericsson Research, Sweden Harald Jacobsson: Ericsson AB, Ericsson Research, Sweden Mingquan Bao: Ericsson AB, Ericsson Research, Sweden Thomas Lewin: Ericsson AB, Ericsson Research, Sweden
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Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
006
No. of pages:
4
Publication type:
Abstract and Fulltext
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


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After a brief discussion of the recent development of SiGe HBT technology; the state-of-the-art achievement of the technology in circuits implementation is reviewed from an applied perspective; focusing on microwave and mm-wave applications. In particular; the performance of SiGe HBT-based oscillator and receiver front-end Ics are presented and relevant industry issues are addressed.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Yinggang Li, Harald Jacobsson, Mingquan Bao, Thomas Lewin
Title:
High-frequency SiGe MMICs - an industrial perspective
References:

[1] H. Jacobsson; B. Hansson; H. Berg and S. Gevorgian;"Very Low Phase-Noise Fully-Integrated Coupled VCOs"; 2002 IEEE RFIC Symp. Dig.; pp.467-470; June 2002


[2] M. Bao; H. Jacobsson and Y. Li; "22/44-GHzBalanced Colpitts VCO in SiGe Technology"; to be submitted; 2003


[3] S. P. Voinigescu; D. Marchesan and M. A. Copeland;"A Family of Monolithic Inductor-Varactor SiGe-HBT VCOs for 20GHz to 30GHz LMDS and Fiber-Optic Receiver Applications;" 2000 IEEE RFIC Symp. Dig.; pp.173-177; June 2000


[4] H. Li and H-M. Rein; "Millimeter-Wave VCOs with Wide Tuning Range and Low Phase Noise; Fully Integrated in a SiGe Bipolar Production Technology";J. of Solid-State Circuits; Vol. 38; No. 2; pp.184-191; 2003


[5] H. Li and H-M. Rein; "47GHz VCOs with Low Phase Noise Fabricated in a SiGe Bipolar Production Technology"; IEEE Microwave & Wireless Component Letts.; Vol. 12; No. 3; pp.79-81; 2002


[6] S. Hackl; et al.; "A 28GHz Monolithic Integrated Quadrature Oscillator in SiGe Bipolar Technology;" J. of Solid-State Circuits; vol. 38; No. 1; pp.135-137; 2003


[7] W. Perndl; et. al; BCTM; Toulouse; Sept. 2003;


[8] G. Schuppener; T. Harada and Y. Li; "A 23-GHz Low- Noise Amplifier in SiGe Heterojunction Bipolar technology"; 2001 IEEE RFIC Symp. Dig.; pp.177- 180; May 2001


[9] Y. Li; M. Bao; M. Ferndahl and A. Cathelin; "23GHz Front-end Circuits in SiGe BiCMOS Technology;" 2003 IEEE RFIC Symp. Dig.; Philadelphia; June 2003


[10] J. Böck; et al.; "Sub 5ps SiGe Bipolar Technology"; 2002 IEDM Technical Digest; Dec. 2002


[11] D. R. Greenberg; et al.; "Noise Performance of a Low Base Resistance 200 GHz SiGe technology"; 2002 IEDM Technical Digest; Dec. 2002


[12] M. Bao; Y. Li and A. Cathelin; "20-30GHz Activemixers in SiGe BiCMOS Technology"; to be submitted; 2003


[13] E. Sönmez; et al; "A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process;" 2002 IEEE RFIC Symp. Dig.; pp.159-162; June 2002

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
Yinggang Li, Harald Jacobsson, Mingquan Bao, Thomas Lewin
Title:
High-frequency SiGe MMICs - an industrial perspective
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