A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit was implemented with lumped and distributed elements. An output power of 7.9 W at 73 % drain efficiency with a gain of 12.5 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This result represents state of the art in output power and efficiency with a class E amplifier at this frequency.