Article | GigaHertz 2003. Proceedings from the Seventh Symposium | Recent Results from SiC Research Project at Thales: Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SIC Mesfets

Title:
Recent Results from SiC Research Project at Thales: Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SIC Mesfets
Author:
A. Kerlain: Thales Research and Technology, Sweden E. Morvan: Thales Research and Technology, Sweden C. Dua: Thales Research and Technology, Sweden N. Caillas: Thales Research and Technology, Sweden C. Brylinski: Thales Research and Technology, Sweden
Download:
Full text (pdf)
Year:
2003
Conference:
GigaHertz 2003. Proceedings from the Seventh Symposium
Issue:
008
Article no.:
002
No. of pages:
4
Publication type:
Abstract and Fulltext
Published:
2003-11-06
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet


Export in BibTex, RIS or text

Several passivation schemes on 4H-SiC MESFETs have been studied. Two main configurations are compared. MESFET structures with thin passivation layer or no passivation layer (Configuration 1) exhibit high breakdown voltage but also current instability after high voltage Vds stress. Thick SiO2 passivation covering the gate (Configuration 2) improves the current stability but yields lower breakdown voltage and higher gate leakage current. Surface trapping effects are considered as the main cause of the observed phenomena.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
A. Kerlain, E. Morvan, C. Dua, N. Caillas, C. Brylinski
Title:
Recent Results from SiC Research Project at Thales: Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SIC Mesfets
References:

[1] U.K. Mishra; P. Parikh; and Y-F Wu; Proc. IEEE 90 (june 2002); p.1022.


[2] R.C. Clark; and J.W. Palmour; Proc. IEEE 90 (june 2002); p.987


[3] M.G. Walden; M. Knight; IEEE EDMO Conference 2002.


[4] A.K. Agarwal; S. Seshadri; and L.B. Rowland; IEEE Electron Device Lett.; 18 (1997) ; p.592.


[5] V.V. Afanas’ev; F. Ciobanu; G. Pensl; and A. Stesmans; chapter 14 of "Recent Progress in Silicon Carbide"; ed. by W.J. Choyke; H. Matsunami; and G. Pensl..to be published; Springer Verlag.


[6] R. Vetury; N.Q. Zhang; S. Keller; and K. Mishra; IEEE Trans. Electron Devices; 48 (2001) ; p.560.


[7] G. Koley; V. Tilak; L.F. Eastman; and M.G. Spencer; IEEE Trans. Electron Devices; 50 (2003) ; p.886.


[8] K.P. Hilton et Al; Mat. Sci. Forum 338-342 (2000); p.1251. ICSCRM 1999.


[9] H.Y. Cha et Al; Mat. Sci. Forum 433-436 (2003); p.749.


[10] H-C. Chiu; M-J. Hwu; S-C. Yang; Y-J. Chan; IEEE Electron Device Lett.; 23 (2002) ; p.243.


[11] H.Y. Cha et Al; IEEE Electron Device Lett.; 24 (2003) ; p.571.


[12] P.C. Chao; M. Shur; M.Y. Kao; and B.R. Lee; ; IEEE Trans. Electron Devices; 39 (1992) ; p.738.


[13] S. Berberich et Al; Mat. Sci. Forum 264-268 (1998); p.881.


[14] H.Y. Cha et Al; IEEE Trans. Electron Devices; 50 (2003) ; p.1569.


[15] N. Sghaier; et Al; IEEE Trans. Electron Devices; 50 (2003) ; p.297.


[16] A.P.Zhang et Al; J. Elec. Mat.32 (2003); p.437.


[17] H. Kim et Al; IEEE Electron Device Lett.; 24 (2003) ; p.421.

GigaHertz 2003. Proceedings from the Seventh Symposium

Author:
A. Kerlain, E. Morvan, C. Dua, N. Caillas, C. Brylinski
Title:
Recent Results from SiC Research Project at Thales: Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SIC Mesfets
Note: the following are taken directly from CrossRef
Citations:
No citations available at the moment