Publications for Xun Li
Co-author map based on ISI articles 2007-

Publications mentioned in social media 5 times*

Keywords

vapor temperature substrates si quality precursor ones n-face gas gan gallium epitaxial epilayers doping devices cvd csi carbon 4h-sic 3c-sic

Journal Articles

Örjan Danielsson, Xun Li, Lars Ojamäe, Erik Janzén, Henrik Pedersen and Urban Forsberg
  A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride
  Journal of Materials Chemistry, 2016, 4(4), 863-871.

Johan Bergsten, Xun Li, Daniel Nilsson, Örjan Danielsson, Henrik Pedersen, Erik Janzén, Urban Forsberg and Niklas Rorsman
  AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
  Japanese Journal of Applied Physics, 2016, 55, .

Xun Li, Carl Hemmingsson, Urban Forsberg, Erik Janzén and Galia Pozina
  Properties of GaN layers grown on N-face free-standing GaN substrates
  Journal of Crystal Growth, 2015, 413, 81-85.

Xun Li, J. Bergsten, Daniel Nilsson, Örjan Danielsson, Henrik Pedersen, N. Rorsman, Erik Janzén and Urban Forsberg
  Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
 
Altmetric usage: 2

  Applied Physics Letters, 2015, 107(26), 262105.
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Xun Li, Örjan Danielsson, Henrik Pedersen, Erik Janzén and Urban Forsberg
  Precursors for carbon doping of GaN in chemical vapor deposition
 
Altmetric usage: 3

  Journal of Vacuum Science & Technology B, 2015, 33(2), 021208.
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 Web of Science® Times Cited: 2

Xun Li, Henrik Jacobson, Alexandre Boulle, Didier Chaussende and Anne Henry
  Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC
  ECS Journal of Solid State Science and Technology, 2014, 3(4), P75-P81.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Conference Articles

Xun Li, Erik Janzén and Anne Henry
  Homo-epitaxial growth on low-angle off cut 4H-SiC substrate
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


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Anne Henry, Xun Li, Henrik Jacobson, Sven Andersson, Alexandre Boulle, Didier Chaussende and Erik Janzén
  3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 2  Fulltext PDF

Henrik Jacobson, Xun Li, Erik Janzén and Anne Henry
  Structural investigation of heteroepitaxial 3C-SiC grown on 4H-SiC substrates
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Xun Li, Jawad ul Hassan, Olof Kordina, Erik Janzén and Anne Henry
  Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
  Materials Science Forum (Volumes 740 - 742), 2013.


 Web of Science® Times Cited: 2

Xun Li, Stefano Leone, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Anne Henry, Xun Li, Stefano Leone, Olof Kordina and Erik Janzén
  CVD growth of 3C-SiC on 4H-SiC substrate
  Materials Science Forum Vol 711, 2012.


 Web of Science® Times Cited: 1  Fulltext PDF

Ph.D. Theses

Xun Li
  CVD solutions for new directions in SiC and GaN epitaxy
  2015.


  Fulltext PDF

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.