Publications for Wei-Xin Ni
Co-author map based on ISI articles 2007-

Keywords

temperatures temperature strain spatially sige si/ge si relaxation quantum photoluminescence optical intensity ge epitaxy energy emission electroluminescence devices bias beam

Journal Articles

Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
  Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
  Applied Physics Letters, 2010, 96(18), 181107.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Bouchaib Adnane, Fredrik Karlsson, Ming Zhao, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
  Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2009, , .

Yi Zhou, Kristofer Tvingstedt, Fengling Zhang, Chunxia Du, Wei-Xin Ni, Mats R Andersson and Olle Inganäs
  Observation of a Charge Transfer State in Low-Bandgap Polymer/Fullerene Blend Systems by Photoluminescence and Electroluminescence Studies
  ADVANCED FUNCTIONAL MATERIALS, 2009, 19(20), 3293-3299.
 Web of Science® Times Cited: 39

Bouchaib Adnane, Yi-Fan Lai, Jia-Min Shieh, Per-Olof Holtz and Wei-Xin Ni
  Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica
  Solid-State Electronics, 2009, 53(8), 862-864.
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 Web of Science® Times Cited: 3

Ming Zhao, Göran Hansson and Wei-Xin Ni
  Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy
  JOURNAL OF APPLIED PHYSICS, 2009, 105(6), 063502.
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 Web of Science® Times Cited: 3

M.H. Cheng, Wei-Xin Ni, G.L. Luo, S.C. Huang, J.J. Chang and C.Y. Lee
  Growth and characterization of Ge nanostructures selectively grown on patterned Si
  Thin Solid Films, 2008, 517(1), 57-61.
 Web of Science® Times Cited: 4

P.Y. Chen, C.H. Chen, H. Wang, J.H. Tsai and Wei-Xin Ni
  Synthesis design of artificial magnetic metamaterials using a genetic algorithm
  Optics Express, 2008, 16(17), 12806-12818.
 Web of Science® Times Cited: 18

Ming Zhao, Amir Karim, Göran Hansson, Wei-Xin Ni, P Townsend, S A Lynch and D J Paul
  Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission
  Thin Solid Films, 2008, 517(1), 34-37.
 Web of Science® Times Cited: 1

Jia-Min Shieh, Yi-Fan Lai, Wei-Xin Ni, Hao-Chung Kuo, Chih-Yao Fang, Jung Y. Huang and Ci-Ling Pan
  Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
  Applied Physics Letters, 2007, 90(5), .
 Web of Science® Times Cited: 32

P. Rauter, T. Fromherz, N.Q. Vinh, B.N. Murdin, J.P. Phillips, C.R. Pidgeon, L. Diehl, G. Dehlinger, D. Gruetzmacher, Ming Zhao, Wei-Xin Ni and G. Bauer
  Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments
  New Journal of Physics, 2007, 9, .
 Web of Science® Times Cited: 4

D.J. Paul, G. Matmon, P. Townsend, J. Zhang, Ming Zhao and Wei-Xin Ni
  A Review Of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers
  Journal of the Institution of Electronics and Telecommunication Engineers, 2007, 53(3), 285-292.
 Web of Science® Times Cited: 6

P.F. Gomes, F. Iikawa, F. Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni and Per-Olof Holtz
  Type-I optical emissions in GeSi quantum dots
  Applied Physics Letters, 2007, 91(5), .
 Web of Science® Times Cited: 3

S.A. Lynch, D.J. Paul, P. Townsend, G. Matmon, Z. Suet, R.W. Kelsall, Z. Ikonic, P. Harrison, J. Zhang, D.J. Norris, A.G. Cullis, C.R. Pidgeon, P. Murzyn, B. Murdin, M. Bain, H.S. Gamble, Ming Zhao and Wei-Xin Ni
  Toward silicon-based lasers for terahertz sources
  IEEE Journal of Selected Topics in Quantum Electronics, 2006, 12(6), 1570-1577.
 Web of Science® Times Cited: 24

Anders Elfving, Amir Karim, Göran V. Hansson and Wei-Xin Ni
  Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
  Applied Physics Letters, 2006, 89, 083510-083513.
 Web of Science® Times Cited: 6

Ming Zhao, Wei- Xin Ni, P Townsend, S. A. Lynch, D. J. Paul, M. N. Chang and C. C. Hsu
  Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates
  Thin Solid Films, 2006, 508(1-2), 24-28.
 Web of Science® Times Cited: 4

Ming Zhao, Amir Karim, Wei-Xin Ni, C. R. Pidgeon, P. J. Phillips, D. Carder, B. N. Murdin, T. Fromherz and D. J. Paul
  Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
  Journal of luminescence, 2006, 121(2), 403-408.
 Web of Science® Times Cited: 2

Anders Elfving, Ming Zhao, Göran V. Hansson and Wei-Xin Ni
  Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
  Applied physics letters, 2006, 89, 181901-1--181901-3.
 Web of Science® Times Cited: 9

Mats Larsson, Anders Elfving, Wei-Xin Ni, Göran V. Hansson and Per-Olof Holtz
  Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy
  Physical Review B, 2006, 73(19), 195319-1--195319-7.
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 Web of Science® Times Cited: 22

G Luo, CC Cheng, CY Huang, SL Hsu, CH Chien, Wei-Xin Ni and CY Chang
  Suppressing phosphorus diffusion in germanium by carbon incorporation
  Electronics Letters, 2005, 41(24), 1354-1355.
 Web of Science® Times Cited: 6

CR Pidgeon, PJ Phillips, D Carder, BN Murdin, T Fromherz, DJ Paul, Wei-Xin Ni and Ming Zhao
  Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy
  Semiconductor Science and Technology, 2005, 20(10), L50-L52.
 Web of Science® Times Cited: 9

Amir Karim, G. V. Hansson, Wei-Xin Ni, Per-Olof Holtz, Mats Larsson and H.A. Atwater
  Photoluminescence Studies of Sn Quantum Dots in Si Grown by MBE
  Optical materials (Amsterdam), 2005, 27(5), 836-840.
 Web of Science® Times Cited: 7

Mats Larsson, Per-Olof Holtz, Anders Elfving, Göran Hansson and Wei-Xin Ni
  Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots
  Physical Review B, 2005, 71(11), 113301.
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 Web of Science® Times Cited: 5

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Photoluminescence study of Si/Ge quantum dots
  Surface Science, 2003, 532-535, 832-836.
 Web of Science® Times Cited: 15

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Luminescence study of Si/Ge quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2003, 16(3-4), 476-480.
 Web of Science® Times Cited: 7

Anders Elfving, Göran V. Hansson and Wei-Xin Ni
  SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm
  Physica E: Low-dimensional Systems and Nanostructures, 2003, 16(3-4), 528-532.
 Web of Science® Times Cited: 18

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Spatially direct and indirect transitions observed for Si/Ge quantum dots
  Applied Physics Letters, 2003, 82(26), 4785-4787.
 Web of Science® Times Cited: 30

Chun-Xia Du, Fabrice Duteil, Göran Hansson and Wei-Xin Ni
  Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy
  Applied Physics Letters, 2001, 78(12), 1697-1699.
 Web of Science® Times Cited: 7

PO Nilsson, S Mankefors, J Guo, J Nordgren, D Debowska-Nilsson, Wei-Xin Ni and Göran Hansson
  Electronic structure of ultrathin Ge layers buried in Si(100)
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(11), .
 Web of Science® Times Cited: 4

Chun-Xia Du, F. Duteil, Göran Hansson and Wei-Xin Ni
  Si/SiGe/Si: Er
  Applied Physics Letters, 2001, 78(12), 1697-1699.

Göran Hansson, Wei-Xin Ni, Chun-Xia Du, Anders Elfving and F. Duteil
  Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
  Applied Physics Letters, 2001, 78(15), 2104-2106.
 Web of Science® Times Cited: 21

Chun-Xia Du, F. Duteil, Göran Hansson and Wei-Xin Ni
  Efficient 1.54 µm light emission from Si/SiGe/Si: Er
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 81(1-3), 105-108.
 Web of Science® Times Cited: 1

I.K. Robinson, P.O. Nilsson, D. Debowska-Nilsson, Wei-Xin Ni and Göran Hansson
  Resonant scattering in delta-doped heterostructures
  Applied Physics Letters, 2001, 79(18), 2913-2915.
 Web of Science® Times Cited: 5

Chun-Xia Du, Wei-Xin Ni, KB Joelsson, F Duteil and Göran Hansson
  Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy
  Optical materials (Amsterdam), 2000, 14(3), 259-265.
 Web of Science® Times Cited: 11

Wei-Xin Ni, Chun-Xia Du, F. Duteil, Galia Pozina and Göran Hansson
  Light emitting SiGe/i-Si/Si: Er
  Thin Solid Films, 2000, 369(1), 414-418.
 Web of Science® Times Cited: 6

F. Duteil, Chun-Xia Du, K.B. Joelsson, Per Persson, Lars Hultman, Galia Pozina, Wei-Xin Ni and Göran Hansson
  Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
  Materials Science in Semiconductor Processing, 2000, 3(5-6), 523-528.
 Web of Science® Times Cited: 6

Conference Articles

P F Gomes, F Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni, Per-Olof Holtz, J R Madureira and A García-Cristóbal
  Large optical emission blue shift in Ge/Si quantum dots under external biaxial strain
  ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008.


P.F. Gomes, P.F. Gomes, F. Iikawa, F. Iikawa, F. Cerdeira, F. Cerdeira, Mats Larsson, Mats Larsson, Anders Elfving, Anders Elfving, Göran Hansson, Göran Hansson, Wei-Xin Ni, Wei-Xin Ni, Per-Olof Holtz and Per-Olof Holtz
  Size dependent spatial direct and indirect transitions in Ge/Si QDs
  The 6th International Conference on Low Dimensional Structures and Devices,2007, 2007.


Amir Karim, Anders Elfving, Mats Larsson, Wei-Xin Ni and G. V. Hansson
  Compositional analysis of Si/SiGe quantum dots using STEM and EDX
  Volume 6129 - Quantum Dots, Particles, and Nanoclusters III, Proceedings of SPIE, 2006.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
  Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  The 23rd International Conference on Defects in Semiconductors,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
  Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  The 9th Conference on Optics and Excitons in Confined Systems,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Asymmetric band alignment at Si/Ge quantum dots studied by luminescence from p-i-n and n-i-p structures
  ICPS2004,2004, 2005.


Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson and Göran Hansson
  Characterization of Er/O-doped Si-LEDs with low thermal quenching
  Material Research Society Symposium Proceedings, 2005.


Bouchaib Adnane, Anders Elfving, Ming Zhao, Mats Larsson, Bengt Magnuson and Wei-Xin Ni
  Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
  First IEEE International Conference on Group IV Photonics, 2004.


Mats Larsson, Anders Elfving, M.I. Hussain, Per-Olof Holtz and Wei-Xin Ni
  Luminescence Properties of Ge Quantum Dots Produced by MBE at Different Temperatures
  Proc. of IEEE/LEOS 1st International Conference on Group IV Photonics,2004, 2004.


Wei-Xin Ni, Anders Elfving, Mats Larsson, Göran Hansson and Per-Olof Holtz
  Si-based Photonic Transistor Devices for Integrated Optoelectronics
  The 3rd International Conference on SiGe Epitaxy and Heterostructures,2003, 2003.


Anders Elfving, Mats Larsson, Per-Olof Holtz, Göran V. Hansson and Wei-Xin Ni
  Efficient near infrared Si/Ge quantum dot photodetector based on a heterojunction bipolar transistor
  Material Research Society Symposium Proceedings, 2003.


Anders Elfving, Göran. V. Hansson and Wei-Xin Ni
  Infrared photodetectors based on a Ge-dot/SiGe-well field effect transistor structure
  Electrochemical Society Proceedings, SiGe: Materials, Processing, and Devices, 2003.


E. Haq, Wei-Xin Ni and Göran Hansson
  Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer
  , 2002.


Y.-H. Wu, C.-Y. Wang, Anders Elfving, Göran Hansson and Wei-Xin Ni
  Surface diffusion limited nucleation of Ge dots on the Si(001) surface
  , 2002.


 Web of Science® Times Cited: 1

T. Johansson and Wei-Xin Ni
  Feasibility study of 25 V SiGe RF-power transistors for cellular base station output amplifiers
  , 2002.


 Web of Science® Times Cited: 1

Wei-Xin Ni, Chun-Xia Du, F. Duteil, Anders Elfving and Göran Hansson
  1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
  Optical materials (Amsterdam), 2001.


 Web of Science® Times Cited: 2

F. Duteil, Chun-Xia Du, K. Jarrendahl, Wei-Xin Ni and Göran Hansson
  Er/O doped Si1-xGex alloy layers grown by MBE
  Optical materials (Amsterdam), 2001.


 Web of Science® Times Cited: 1

Wei-Xin Ni, K. Lyutovich, Jones Alami, Carl Tengstedt, M. Bauer and E. Kasper
  X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (=100 nm) using a low temperature growth step
  Journal of Crystal Growth, 2001.


 Web of Science® Times Cited: 20

K. Li, J. Zhang, D. Liu, Q. Yi, L. Guo, S. Xu and Wei-Xin Ni
  MBE-based SiGe/Si heterojunction multilayer structures
  Journal of Crystal Growth, 2001.


 Web of Science® Times Cited: 1

Ph.D. Theses

Bouchaib Adnane
  Optical characterization of Silicon-based self-assembled nanostructures
  2010.


Amir Karim
  Si-based structures for light emission and detection
  2008.


  Fulltext PDF

Ming Zhao
  Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy
  2008.


  Fulltext PDF

Anders Elfving
  Near-infrared photodetectors based on Si/SiGe nanostructures
  2006.


  Fulltext PDF