Publications for Wei-Xin Ni
Co-author map based on ISI articles 2007-
Journal Articles
Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
Applied Physics Letters, 2010, 96(18), 181107.
Fulltext  Web of Science® Times Cited: 7 |
Bouchaib Adnane, Fredrik Karlsson, Ming Zhao, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
Physical Review B. Condensed Matter and Materials Physics, 2009, , .
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Yi Zhou, Kristofer Tvingstedt, Fengling Zhang, Chunxia Du, Wei-Xin Ni, Mats R Andersson and Olle Inganäs
Observation of a Charge Transfer State in Low-Bandgap Polymer/Fullerene Blend Systems by Photoluminescence and Electroluminescence Studies
ADVANCED FUNCTIONAL MATERIALS, 2009, 19(20), 3293-3299.
Web of Science® Times Cited: 31 |
Bouchaib Adnane, Yi-Fan Lai, Jia-Min Shieh, Per-Olof Holtz and Wei-Xin Ni
Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica
Solid-State Electronics, 2009, 53(8), 862-864.
Fulltext Web of Science® Times Cited: 2 |
Ming Zhao, Göran Hansson and Wei-Xin Ni
Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy
JOURNAL OF APPLIED PHYSICS, 2009, 105(6), 063502.
Fulltext Web of Science® Times Cited: 2 |
M.H. Cheng, Wei-Xin Ni, G.L. Luo, S.C. Huang, J.J. Chang and C.Y. Lee
Growth and characterization of Ge nanostructures selectively grown on patterned Si
Thin Solid Films, 2008, 517(1), 57-61.
Web of Science® Times Cited: 4 |
P.Y. Chen, C.H. Chen, H. Wang, J.H. Tsai and Wei-Xin Ni
Synthesis design of artificial magnetic metamaterials using a genetic algorithm
Optics Express, 2008, 16(17), 12806-12818.
Web of Science® Times Cited: 15 |
Ming Zhao, Amir Karim, Göran Hansson, Wei-Xin Ni, P Townsend, S A Lynch and D J Paul
Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission
Thin Solid Films, 2008, 517(1), 34-37.
Web of Science® Times Cited: 1 |
Jia-Min Shieh, Yi-Fan Lai, Wei-Xin Ni, Hao-Chung Kuo, Chih-Yao Fang, Jung Y. Huang and Ci-Ling Pan
Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
Applied Physics Letters, 2007, 90(5), .
Web of Science® Times Cited: 26 |
P. Rauter, T. Fromherz, N.Q. Vinh, B.N. Murdin, J.P. Phillips, C.R. Pidgeon, L. Diehl, G. Dehlinger, D. Gruetzmacher, Ming Zhao, Wei-Xin Ni and G. Bauer
Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments
New Journal of Physics, 2007, 9, .
Web of Science® Times Cited: 4 |
D.J. Paul, G. Matmon, P. Townsend, J. Zhang, Ming Zhao and Wei-Xin Ni
A Review Of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers
Journal of the Institution of Electronics and Telecommunication Engineers, 2007, 53(3), 285-292.
Web of Science® Times Cited: 6 |
P.F. Gomes, F. Iikawa, F. Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni and Per-Olof Holtz
Type-I optical emissions in GeSi quantum dots
Applied Physics Letters, 2007, 91(5), .
Web of Science® Times Cited: 3 |
S.A. Lynch, D.J. Paul, P. Townsend, G. Matmon, Z. Suet, R.W. Kelsall, Z. Ikonic, P. Harrison, J. Zhang, D.J. Norris, A.G. Cullis, C.R. Pidgeon, P. Murzyn, B. Murdin, M. Bain, H.S. Gamble, Ming Zhao and Wei-Xin Ni
Toward silicon-based lasers for terahertz sources
IEEE Journal of Selected Topics in Quantum Electronics, 2006, 12(6), 1570-1577.
Web of Science® Times Cited: 22 |
Mats Larsson, Anders Elfving, Wei-Xin Ni, Göran V. Hansson and Per-Olof Holtz
Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy
Physical Review B, 2006, 73(19), 195319-1--195319-7.
Fulltext Web of Science® Times Cited: 16 |
Anders Elfving, Ming Zhao, Göran V. Hansson and Wei-Xin Ni
Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
Applied physics letters, 2006, 89, 181901-1--181901-3.
Web of Science® Times Cited: 8 |
Ming Zhao, Amir Karim, Wei-Xin Ni, C. R. Pidgeon, P. J. Phillips, D. Carder, B. N. Murdin, T. Fromherz and D. J. Paul
Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
Journal of luminescence, 2006, 121(2), 403-408.
Web of Science® Times Cited: 2 |
Ming Zhao, Wei- Xin Ni, P Townsend, S. A. Lynch, D. J. Paul, M. N. Chang and C. C. Hsu
Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates
Thin Solid Films, 2006, 508(1-2), 24-28.
Web of Science® Times Cited: 4 |
Anders Elfving, Amir Karim, Göran V. Hansson and Wei-Xin Ni
Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
Applied Physics Letters, 2006, 89, 083510-083513.
Web of Science® Times Cited: 5 |
G Luo, CC Cheng, CY Huang, SL Hsu, CH Chien, Wei-Xin Ni and CY Chang
Suppressing phosphorus diffusion in germanium by carbon incorporation
Electronics Letters, 2005, 41(24), 1354-1355.
Web of Science® Times Cited: 4 |
CR Pidgeon, PJ Phillips, D Carder, BN Murdin, T Fromherz, DJ Paul, Wei-Xin Ni and Ming Zhao
Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy
Semiconductor Science and Technology, 2005, 20(10), L50-L52.
Web of Science® Times Cited: 8 |
Amir Karim, G. V. Hansson, Wei-Xin Ni, Per-Olof Holtz, Mats Larsson and H.A. Atwater
Photoluminescence Studies of Sn Quantum Dots in Si Grown by MBE
Optical materials (Amsterdam), 2005, 27(5), 836-840.
Web of Science® Times Cited: 5 |
Mats Larsson, Per-Olof Holtz, Anders Elfving, Göran Hansson and Wei-Xin Ni
Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots
Physical Review B, 2005, 71(11), 113301.
Fulltext Web of Science® Times Cited: 3 |
Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
Photoluminescence study of Si/Ge quantum dots
Surface Science, 2003, 532-535, 832-836.
Web of Science® Times Cited: 14 |
Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
Luminescence study of Si/Ge quantum dots
Physica. E, Low-Dimensional systems and nanostructures, 2003, 16(3-4), 476-480.
Web of Science® Times Cited: 6 |
Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
Spatially direct and indirect transitions observed for Si/Ge quantum dots
Applied Physics Letters, 2003, 82(26), 4785-4787.
Web of Science® Times Cited: 25 |
Anders Elfving, Göran V. Hansson and Wei-Xin Ni
SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm
Physica E: Low-dimensional Systems and Nanostructures, 2003, 16(3-4), 528-532.
Web of Science® Times Cited: 18 |
Chun-Xia Du, Fabrice Duteil, Göran Hansson and Wei-Xin Ni
Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy
Applied Physics Letters, 2001, 78(12), 1697-1699.
Web of Science® Times Cited: 7 |
PO Nilsson, S Mankefors, J Guo, J Nordgren, D Debowska-Nilsson, Wei-Xin Ni and Göran Hansson
Electronic structure of ultrathin Ge layers buried in Si(100)
Physical Review B. Condensed Matter and Materials Physics, 2001, 64(11), .
Web of Science® Times Cited: 4 |
Chun-Xia Du, F. Duteil, Göran Hansson and Wei-Xin Ni
Si/SiGe/Si: Er
Applied Physics Letters, 2001, 78(12), 1697-1699.
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Göran Hansson, Wei-Xin Ni, Chun-Xia Du, Anders Elfving and F. Duteil
Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
Applied Physics Letters, 2001, 78(15), 2104-2106.
Web of Science® Times Cited: 21 |
Chun-Xia Du, F. Duteil, Göran Hansson and Wei-Xin Ni
Efficient 1.54 µm light emission from Si/SiGe/Si: Er
Materials Science & Engineering, 2001, 81(1-3), 105-108.
Web of Science® Times Cited: 1 |
I.K. Robinson, P.O. Nilsson, D. Debowska-Nilsson, Wei-Xin Ni and Göran Hansson
Resonant scattering in delta-doped heterostructures
Applied Physics Letters, 2001, 79(18), 2913-2915.
Web of Science® Times Cited: 5 |
Chun-Xia Du, Wei-Xin Ni, KB Joelsson, F Duteil and Göran Hansson
Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy
Optical materials (Amsterdam), 2000, 14(3), 259-265.
Web of Science® Times Cited: 11 |
Wei-Xin Ni, Chun-Xia Du, F. Duteil, Galia Pozina and Göran Hansson
Light emitting SiGe/i-Si/Si: Er
Thin Solid Films, 2000, 369(1), 414-418.
Web of Science® Times Cited: 6 |
F. Duteil, Chun-Xia Du, K.B. Joelsson, Per Persson, Lars Hultman, Galia Pozina, Wei-Xin Ni and Göran Hansson
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
Materials Science in Semiconductor Processing, 2000, 3(5-6), 523-528.
Web of Science® Times Cited: 6 |
Conference Articles
P F Gomes, F Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni, Per-Olof Holtz, J R Madureira and A García-Cristóbal
Large optical emission blue shift in Ge/Si quantum dots under external biaxial strain
ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008.
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P.F. Gomes, P.F. Gomes, F. Iikawa, F. Iikawa, F. Cerdeira, F. Cerdeira, Mats Larsson, Mats Larsson, Anders Elfving, Anders Elfving, Göran Hansson, Göran Hansson, Wei-Xin Ni, Wei-Xin Ni, Per-Olof Holtz and Per-Olof Holtz
Size dependent spatial direct and indirect transitions in Ge/Si QDs
The 6th International Conference on Low Dimensional Structures and Devices,2007, 2007.
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Amir Karim, Anders Elfving, Mats Larsson, Wei-Xin Ni and G. V. Hansson
Compositional analysis of Si/SiGe quantum dots using STEM and EDX
Volume 6129 - Quantum Dots, Particles, and Nanoclusters III, Proceedings of SPIE, 2006.
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Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
The 23rd International Conference on Defects in Semiconductors,2005, 2005.
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Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
The 9th Conference on Optics and Excitons in Confined Systems,2005, 2005.
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Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
Asymmetric band alignment at Si/Ge quantum dots studied by luminescence from p-i-n and n-i-p structures
ICPS2004,2004, 2005.
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Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson and Göran Hansson
Characterization of Er/O-doped Si-LEDs with low thermal quenching
Material Research Society Symposium Proceedings, 2005.
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Bouchaib Adnane, Anders Elfving, Ming Zhao, Mats Larsson, Bengt Magnuson and Wei-Xin Ni
Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
First IEEE International Conference on Group IV Photonics, 2004.
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Mats Larsson, Anders Elfving, M.I. Hussain, Per-Olof Holtz and Wei-Xin Ni
Luminescence Properties of Ge Quantum Dots Produced by MBE at Different Temperatures
Proc. of IEEE/LEOS 1st International Conference on Group IV Photonics,2004, 2004.
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Wei-Xin Ni, Anders Elfving, Mats Larsson, Göran Hansson and Per-Olof Holtz
Si-based Photonic Transistor Devices for Integrated Optoelectronics
The 3rd International Conference on SiGe Epitaxy and Heterostructures,2003, 2003.
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Anders Elfving, Göran. V. Hansson and Wei-Xin Ni
Infrared photodetectors based on a Ge-dot/SiGe-well field effect transistor structure
Electrochemical Society Proceedings, SiGe: Materials, Processing, and Devices, 2003.
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Anders Elfving, Mats Larsson, Per-Olof Holtz, Göran V. Hansson and Wei-Xin Ni
Efficient near infrared Si/Ge quantum dot photodetector based on a heterojunction bipolar transistor
Material Research Society Symposium Proceedings, 2003.
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E. Haq, Wei-Xin Ni and Göran Hansson
Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer
, 2002.
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Y.-H. Wu, C.-Y. Wang, Anders Elfving, Göran Hansson and Wei-Xin Ni
Surface diffusion limited nucleation of Ge dots on the Si(001) surface
, 2002.
Web of Science® Times Cited: 1
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T. Johansson and Wei-Xin Ni
Feasibility study of 25 V SiGe RF-power transistors for cellular base station output amplifiers
, 2002.
Web of Science® Times Cited: 1
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Wei-Xin Ni, Chun-Xia Du, F. Duteil, Anders Elfving and Göran Hansson
1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
Optical materials (Amsterdam), 2001.
Web of Science® Times Cited: 2
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F. Duteil, Chun-Xia Du, K. Jarrendahl, Wei-Xin Ni and Göran Hansson
Er/O doped Si1-xGex alloy layers grown by MBE
Optical materials (Amsterdam), 2001.
Web of Science® Times Cited: 1
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Wei-Xin Ni, K. Lyutovich, Jones Alami, Carl Tengstedt, M. Bauer and E. Kasper
X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (=100 nm) using a low temperature growth step
Journal of Crystal Growth, 2001.
Web of Science® Times Cited: 19
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K. Li, J. Zhang, D. Liu, Q. Yi, L. Guo, S. Xu and Wei-Xin Ni
MBE-based SiGe/Si heterojunction multilayer structures
Journal of Crystal Growth, 2001.
Web of Science® Times Cited: 1
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Ph.D. Theses
Ph.D., Lic. Theses
