Publications for Vanya Darakchieva
Co-author map based on ISI articles 2007-
Publications mentioned in social media 2 times*
Journal Articles
S. Schöche, T. Hofmann, Vanya Darakchieva, N. Ben Sedrine, X. Wang, A. Yoshikawa and M. Schubert
Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
Journal of Applied Physics, 2013, 113(1), 013502.
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T. Hofmann, P. Kuehne, S. Schöche, Jr-Tai Chen, Urban Forsberg, Erik Janzén, N. Ben Sedrine, C. M Herzinger, J. A Woollam, M. Schubert and Vanya Darakchieva
Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
Applied Physics Letters, 2012, 101(19), .
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A. Boosalis, T. Hofmann, Vanya Darakchieva, Rositsa Yakimova and M. Schubert
Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry
Applied Physics Letters, 2012, 101(1), .
Fulltext Web of Science® Times Cited: 1 |
Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman and Vanya Darakchieva
Elastic constants, composition, and piezolectric polarization in InxAl1-xN: From ab initio calculations to experimental implications for the applicability of Vegards rule
Physical Review B. Condensed Matter and Materials Physics, 2012, 86(15), 155310.
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Vanya Darakchieva, K Lorenz, Mengyao Xie, E Alves, W J Schaff, T Yamaguchi, Y Nanishi, S Ruffenach, M Moret and O Briot
Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209(1), 91-94.
Web of Science® Times Cited: 1 |
Agnė Žukauskaitė, Christopher Tholander, Justinas Pališaitis, Per O. Å. Persson, Vanya Darakchieva, Nebiha Ben Sedrine, Ferenc Tasnádi, Björn Alling, Jens Birch and Lars Hultman
YxAl1-xN Thin Films
Journal of Physics D, 2012, 45(42), 422001.
Fulltext Web of Science® Times Cited: 2 |
Mi Zhou, Frank L Pasquale, Peter A Dowben, Alex Boosalis, Mathias Schubert, Vanya Darakchieva, Rositsa Yakimova, Lingmei Kong and Jeffry A Kelber
Direct graphene growth on Co3O4(111) by molecular beam epitaxy
Journal of Physics, 2012, 24(7), 072201.
Fulltext Web of Science® Times Cited: 2 |
N Catarino, E Nogales, N Franco, Vanya Darakchieva, S. M. C. Miranda, B Mendez, E Alves, J. G. Marques and K Lorenz
Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
Europhysics letters, 2012, 97(6), 68004.
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N. Ben Sedrine, Vanya Darakchieva, D Lindgren, Bo Monemar, S. B. Che, Y Ishitani and A Yoshikawa
Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry
Physica Status Solidi. C, Current topics in solid state physics, 2011, 8(5), 1629-1632.
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Mihails Cubarovs, Henrik Pedersen, Hans Högberg, Vanya Darakchieva, Jensen Jens, Per Persson and Anne Henry
CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
Physica Status Solidi. Rapid Research Letters, 2011, 5(10-11), 397-399.
Fulltext Web of Science® Times Cited: 3 |
Vanya Darakchieva, K Lorenz, Mengyao Xie, E Alves, C L Hsiao, L C Chen, L W Tu, W J Schaff, T Yamaguchi and Y Nanishi
Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
Journal of Applied Physics, 2011, 110(6), 063535.
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Vanya Darakchieva, Mengyao Xie, D Rogalla, H-W Becker, K Lorenz, E Alves, S Ruffenach, M Moret and O Briot
Free electron properties and hydrogen in InN grown by MOVPE
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(5), 1179-1182.
Web of Science® Times Cited: 3 |
N Ben Sedrine, C Bouhafs, M Schubert, J C Harmand, R Chtourou and Vanya Darakchieva
Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry
THIN SOLID FILMS, 2011, 519(9), 2838-2842.
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Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Mengyao Xie, Vanya Darakchieva, Jean-Francois Carlin, Nicolas Grandjean, Jens Birch, Lars Hultman and Per O.Å. Persson
Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopy
physica status solidi (RRL) – Rapid Research Letters, 2011, 5(2), 50-52.
Fulltext Web of Science® Times Cited: 5 |
Junaid Muhammad, Daniel Lundin, Justinas Palisaitis, Ching-Lien Hsiao, Vanya Darakchieva, Jens Jensen, Per Persson, Per Sandström, W-J Lai, L-C Chen, K-H Chen, Ulf Helmersson, Lars Hultman and Jens Birch
Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
Journal of Applied Physics, 2011, 110(12), 123519.
Fulltext Web of Science® Times Cited: 4 |
N. Ben Sedrine, C. Bouhafs, J.C. Harmand, R. Chtourou and Vanya Darakchieva
Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet
Applied Physics Letters, 2010, 97(20), 201903.
Fulltext Web of Science® Times Cited: 2 |
K Lorenz, S Magalhaes, N Franco, N. P. Barradas, Vanya Darakchieva, E Alves, S Pereira, M. R. Correia, F Munnik, R. W. Martin, K. P. O´Donnell and I. M. Watson
Al1xInxN/GaN bilayers: Structure,morphology, and optical properties
Physica status solidi. B, Basic research, 2010, 247(7), 1740-1746.
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Vanya Darakchieva, Mengyao Xie, N Franco, F Giuliani, B Nunes, E Alves, C L Hsiao, L C Chen, T Yamaguchi, Y Takagi, K Kawashima and Y Nanishi
Structural anisotropy of nonpolar and semipolar InN epitaxial layers
JOURNAL OF APPLIED PHYSICS, 2010, 108(7), 073529.
Fulltext Web of Science® Times Cited: 9 |
Vanya Darakchieva, K Lorenz, N P Barradas, E Alves, Bo Monemar, M Schubert, N Franco, C L Hsiao, L C Chen, W J Schaff, L W Tu, T Yamaguchi and Y Nanishi
Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
APPLIED PHYSICS LETTERS, 2010, 96(8), 081907.
Fulltext Web of Science® Times Cited: 16 |
Vanya Darakchieva, N P Barradas, Mengyao Xie, K Lorenz, E Alves, M Schubert, Per Persson, Finn Giuliani, F Munnik, Ching-Lien Hsiao, L W Tu and W J Schaff
Role of impurities and dislocations for the unintentional n-type conductivity in InN
PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4476-4481.
Web of Science® Times Cited: 8 |
Vanya Darakchieva, M Schubert, T Hofmann, Bo Monemar, Ching-Lien Hsiao, Ting-Wei Liu, Li-Chyong Chen, W J Schaff, Y Takagi and Y Nanishi
Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
APPLIED PHYSICS LETTERS, 2009, 95(20), 202103.
Web of Science® Times Cited: 11 |
Vanya Darakchieva, T Hofmann, M Schubert, Bo Sernelius, Bo Monemar, Per Persson, Finn Giuliani, E Alves, H Lu and W J Schaff
Free electron behavior in InN: On the role of dislocations and surface electron accumulation
Applied Physics Letters, 2009, 94(2), 022109.
Fulltext Web of Science® Times Cited: 19 |
K Lorenz, I. S. Roqan, N Franco, K. P. O´Donnell, Vanya Darakchieva, E Alves, C Trager-Cowan, R.W. Martin, D. J. As and M Panfilova
Europium doping of zincblende GaN by ion implantation
Journal of Applied Physics, 2009, 105(11), 113507.
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Vanya Darakchieva
Infrared generalized ellipsometry on non-polar and superlattice group-III nitride films: Strain and phonon anisotropy
Physica Status Solidi (A) Applications and Materials, 2008, 205(4), 905-913.
Web of Science® Times Cited: 3 |
Vanya Darakchieva, Bo Monemar, A. Usui, M. Saenger and M. Schubert
Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
Journal of Crystal Growth, 2008, 310(5), 959-965.
Web of Science® Times Cited: 5 |
T. Hofmann, Vanya Darakchieva, Bo Monemar, H. Lu, W. J. Schaff and M. Schubert
Optical hall effect in hexagonal InN
Journal of Electronic Materials, 2008, 37(5), 611-615.
Web of Science® Times Cited: 14 |
Vanya Darakchieva, Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman, Bo Monemar, J Kamimura and K Kishino
Lattice parameters, deviations from Vegards rule, and E-2 phonons in InAlN
Applied Physics Letters, 2008, 93(26), 261908.
Web of Science® Times Cited: 16 |
M. Gonschorek, J.-F. Carlin, E. Feltin, M.A. Py, N. Grandjean, Vanya Darakchieva, Bo Monemar, M. Lorenz and G. Ramm
Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)
Journal of Applied Physics, 2008, 103(9), 093714.
Web of Science® Times Cited: 63 |
Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
Web of Science® Times Cited: 13 |
Vanya Darakchieva, Manfred Beckers, Mengyao Xie, Lars Hultman, Bo Monemar, J-. F. Carlin, E. Feltin, M. Gonschorek and N. Grandjean
Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-x Inx N films grown on sapphire
Journal of Applied Physics, 2008, 103(10), 103513.
Web of Science® Times Cited: 25 |
Vanya Darakchieva, T. Paskova, M. Schubert, Plamen Paskov, Hans Arwin, Bo Monemar, D. Hommel, M. Heuken, J. Off, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
Journal of Crystal Growth, 2007, 300(1), 233-238.
Web of Science® Times Cited: 4 |
Vanya Darakchieva, Bo Monemar and A. Usui
On the lattice parameters of GaN
Applied Physics Letters, 2007, 91(3), 031911.
Web of Science® Times Cited: 19 |
Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
Journal of Crystal Growth, 2007, 307(2), 334-340.
Web of Science® Times Cited: 47 |
Vanya Darakchieva, Tanja Paskova, M. Schubert, Hans Arwin, Plamen Paskov, Bo Monemar, D. Hommel, J. Off, F. Scholz, M. Heuken, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
Anisotropic strain and phonon deformation potentials in GaN
Physical Review B. Condensed Matter and Materials Physics, 2007, 75(19), 195217.
Web of Science® Times Cited: 40 |
Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Hans Arwin, M Schubert, Bo Monemar, S Figge, D Hommel, BA Haskell, PT Fini and S Nakamura
Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
Physica status solidi. B, Basic research, 2006, 243(7), 1594-1598.
Web of Science® Times Cited: 2 |
T. Hofmann, D. Fritisch, T. Chavdarov, Vanya Darakchieva, H. Lu, W.J. Schaff and M. Schubert
Anisotropy of the G-point electron effective mass of hexagonal InN
Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 1854-1857.
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T. Paskova, Vanya Darakchieva, Plamen Paskov, Bo Monemar, T. Suski, M. Bockowski, N. Ashkenov and M. Schubert
Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high temperature annealing
Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 1475-1478.
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T. Paskova, R. Kroeger, S. Figge, D. Hommel, Vanya Darakchieva, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tutor
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
Applied Physics Letters, 2006, 89(5), 051914.
Web of Science® Times Cited: 45 |
T. Paskova, D. Hommel, Plamen Paskov, Vanya Darakchieva, Bo Monemar, M. Bockowski, T. Suski, I. Grzegory, T. Tuomisto, K. Saarinen, N. Ashkenov and M. Schubert
Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
Applied Physics Letters, 2006, 88(14), 141909.
Web of Science® Times Cited: 17 |
Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E Valcheva, Per Persson, B Arnaudov, S Tungasmitta and Bo Monemar
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
Journal of Crystal Growth, 2005, 281(1), 55-61.
Web of Science® Times Cited: 42 |
Plamen Paskov, Peder Bergman, Vanya Darakchieva, Tanja Paskova, Bo Monemar, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
Photoluminescence of GaN/AlN superlattices grown by MOCVD
Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2345-2348.
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Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E. Valcheva, Per Persson, B. Arnaudov, S. Tungasmita and Bo Monemar
Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties
Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2027-2031.
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Vanya Darakchieva, E. Valcheva, Plamen Paskov, M. Schubert, Tanja Paskova, Bo Monemar, H. Amano and I. Akasaki
Phonon mode behavior in strained wurtzite AlN/GaN superlattices
Physical Review B. Condensed Matter and Materials Physics, 2005, 71(11), 115329.
Web of Science® Times Cited: 16 |
Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
Journal of Applied Physics, 2005, 97(1), 013517.
Web of Science® Times Cited: 16 |
Tanja Paskova, Vanya Darakchieva, E Valcheva, Plamen Paskov, Ivan Gueorguiev Ivanov, Bo Monemar, T Bottcher, C Roder and D Hommel
Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
Journal of Electronic Materials, 2004, 33(5), 389-394.
Web of Science® Times Cited: 15 |
Tanja Paskova, Plamen Paskov, E Valcheva, Vanya Darakchieva, Jens Birch, A Kasic, B Arnaudov, Sukkaneste Tungasmita and Bo Monemar
Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
Physica status solidi. A, Applied research, 2004, 201(10), 2265-2270.
Web of Science® Times Cited: 10 |
Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
Optical investigation of AlGaN/GaN quantum wells and superlattices
Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.
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A Atanassov, M Baleva, Vanya Darakchieva and E Goranova
Grazing incident asymmetric X-ray diffraction of beta-FeSi2 layers, produced by ion beam synthesis
Vacuum, 2004, 76(02-Mar), 277-280.
Web of Science® Times Cited: 3 |
Vanya Darakchieva, Plamen Paskov, E. Valcheva, Tanja Paskova, M. Schubert, C. Bundesmann, H. Lu, W.J. Schaff and Bo Monemar
Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties
Superlattices and Microstructures, 2004, 36(4-6), 573-580.
Web of Science® Times Cited: 11 |
Tanja Paskova, Plamen Paskov, E. M. Goldys, Vanya Darakchieva, U Södervall, M Godlewski, M Zielinski, E Valcheva, C Carlström, Qamar Ul Wahab and Bo Monemar
Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
Journal of Crystal Growth, 2004, 273( 1-2), 118-128.
Web of Science® Times Cited: 5 |
Vanya Darakchieva, Plamen Paskov, E Valcheva, Tanja Paskova, Bo Monemar, M Schubert, H Lu and W.J. Schaff
Deformation potentials of the E1 (TO) and E2 modes of InN
Applied Physics Letters, 2004, 84(18), 3636-3638.
Web of Science® Times Cited: 28 |
Vanya Darakchieva, Jens Birch, M Schubert, Tanja Paskova, S Tungasmita, G Wagner, A Kasic and Bo Monemar
Strain-related structural and vibrational properties of thin epitaxial AIN layers
Physical Review B. Condensed Matter and Materials Physics, 2004, 70(4), 045411.
Web of Science® Times Cited: 26 |
N. Ashkenov, B.N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, D. Spemann, E.M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, H. Neumann, Vanya Darakchieva, Hans Arwin and Bo Monemar
Infrared dielectric functions and phonon modes of high-quality ZnO films
Journal of Applied Physics, 2003, 93(1), 126-133.
Web of Science® Times Cited: 249 |
Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
Physica status solidi. A, Applied research, 2003, 195(3), 516-522.
Web of Science® Times Cited: 13 |
Vanya Darakchieva, Plamen Paskov, Tanja Paskova, E. Valcheva, Bo Monemar and M. Heuken
Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
Applied Physics Letters, 2003, 82(5), 703-705.
Web of Science® Times Cited: 19 |
Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
Journal of Crystal Growth, 2003, 257(1-2), 1-6.
Web of Science® Times Cited: 3 |
Vanya Darakchieva, Jens Birch, Plamen Paskov, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth
Physica status solidi. A, Applied research, 2002, 190(1), 59-64.
Web of Science® Times Cited: 2 |
Vanya Darakchieva, Plamen Paskov, Tanja Paskova, Jens Birch, Sukkaneste Tungasmita and Bo Monemar
Deformation potentials of the E-1(TO) mode in AlN
Applied Physics Letters, 2002, 80(13), 2302-2304.
Web of Science® Times Cited: 16 |
Plamen Paskov, Vanya Darakchieva, Tanja Paskova, Per-Olof Holtz and Bo Monemar
Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
Physica status solidi. B, Basic research, 2002, 234(3), 892-896.
Web of Science® Times Cited: 3 |
Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Vanya Darakchieva, M Iwaya, S Kamiyama, H Amano and I Akasaki
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
MRS Internet journal of nitride semiconductor research, 2002, 7(7), 1.
Web of Science® Times Cited: 8 |
Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Sukkaneste Tungasmita, Jens Birch and Bo Monemar
Defect reduction in HVPE growth of GaN and related optical spectra
Physica status solidi. A, Applied research, 2001, 183(1), 197-203.
Web of Science® Times Cited: 9 |
Tanja Paskova, Plamen Paskov, EM Goldys, Vanya Darakchieva, U Sodervall, M Godlewski, M Zielinski, E Valcheva, CF Carlstrom and Qamar Ul Wahab
Mass transport growth and properties of hydride vapour phase epitaxy GaN
Physica status solidi. A, Applied research, 2001, 188(1), 447-451.
Web of Science® Times Cited: 2 |
Chapters in Books
Conference Articles
Stefan Schöche, Tino Hofmann, Nebiha Ben Sedrine, Vanja Darakchieva, Xinqiang Wang, Akihiko Yoshikawa and Mathias Schubert
Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
MRS Proceedings Volume 1396, 2012.
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Alexander Boosalis, Tino Hofmann, Vanya Darakchieva, Rositza Yakimova, Tom Tiwald and Mathias Schubert
Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC
MRS Proceedings Volume 1407, 2012.
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N. P. Barradas, K Lorenz, Vanya Darakchieva and E Alves
A Double Scattering Analytical Model For Elastic Recoil Detection Analysis
AIP Conference Proceedings, Volume 1336, 2011.
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L Lorenz, S. M. C. Miranda, N. P. Barradas, E Alves, Y Nanishi, W. J. Schaff, L. W. Tu and Vanya Darakchieva
Hydrogen In Group‐III Nitrides: An Ion Beam Analysis Study
AIP Conference Proceedings, Volume 1336, 2011.
Web of Science® Times Cited: 1
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Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
Very high growth rate of 4H-SiC using MTS as chloride-based precursor
Materials Science Forum, Vol. 600-603, 2009.
Web of Science® Times Cited: 3
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Mengyao Xie, Mengyao Xie, Vanya Darakchieva, Vanya Darakchieva, Bo Monemar, Bo Monemar, J. Kamimura, J. Kamimura, K. Kishino and K. Kishino
Lattice parameters and optical phonons
IWN 2008,2008, 2008.
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Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, Galia Pozina, Fredrik Karlsson, Vanya Darakchieva, Plamen Paskov and Bo Monemar
DAP emission band in a carbon doped (1-101)GaN grown ob (001) Si substrate
Phys. Stat. Sol. (c) Vol. 6, 2008.
Web of Science® Times Cited: 3
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T. Hofmann, Vanya Darakchieva, Bo Monemar, H. Lu, W.J. Schaff, L.-C. Chen, Y. Nanishi and M. Schubert
Assessment of the surface electron properties of polar and non-polar InN surfaces
MRS Fall Meeting,2008, 2008.
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Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Monemar, H. Lu, W.J. Schaff, C.-L. Hsiao, T.-W. Liu, L.-C. Chen, D. Muto and Y. Nanishi
New insight into the free carrier properties of InN
International workshop on Nitride semiconductors IWN2008,2008, 2008.
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T. Hofmann, Vanya Darakchieva, Bo Monemar, H. Lu, W.J. Schaff and M. Schubert
Optical Hall effect in hexagonal InN
Electron. Materials Conference,2007, 2008.
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Vanya Darakchieva
Unraveling the free electron behavior in InN
International Conference on electronic Materials 2008, IUMRS-ICEM 2008,2008, 2008.
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Vanya Darakchieva, Manfred Beckers, Lars Hultman, Mengyao Xie, Bo Monemar, J.-F Carlin and N. Grandjean
Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule
7th Int. Conference on Nitride Semiconductors ICNS-7,2007, 2008.
Web of Science® Times Cited: 1
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Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Sernelius, Finn Giuliani, Mengyao Xie, Per O. A. Persson, Bo Monemar, W. J. Schaff, C.-L. Hsiao, L.-C. Chen and Y Nanishi
Unravelling the free electron behavior in InN
Optoelectronic and Microelectronic Materials and Devices, 2008, 2008.
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Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
ICNS-7,2007, 2007.
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Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva and Erik Janzén
Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
Surface and Coatings Technology, Volume 201, Issue 22-23 SPEC. ISS., 2007.
Web of Science® Times Cited: 6
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Vanya Darakchieva, Bo Monemar, Tanja Paskova, S. Einfeldt, D Hommel and S. Lourdudoss
Phonons in strained AlGaN/GaN superlattices
6th International Symposium on Blue Laser and Light Emitting Diodes,2006, 2007.
Web of Science® Times Cited: 3
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Tanja Paskova, Plamen Paskov, Vanya Darakchieva, R. Kröger, D. Hommel, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tudor
Strain-free low-defect-density bulk GaN with nonpolar orientation
Proc. of the MRS Fall Meeting,2006, 2007.
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Vanya Darakchieva, T. Hofmann, M. Schubert, H. Lu, W.J. Schaff and Bo Monemar
Conduction band effective mass anisotropy and nonparabolicity of InN
Proc. of 3rd Workshop on Indium Nitride, 2006.
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Hans Arwin, Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, Mattias Schubert, S Figge, D Hommel, B A Haskell, P T Fini and S Nakamura
Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
ICSN-6,2005, 2005.
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Tanja Paskova, T. Suski, M. Bockowski, Plamen Paskov, Vanya Darakchieva, Bo Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Röder and D. Hommel
High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress
MRS Fall Meeting,2004, 2005.
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Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
Growth of GaN on a-plane sapphire: In-plane epitaxial relationships and lattice parameters
Physica status solidi. B, Basic research, 2003.
Web of Science® Times Cited: 5
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A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Bottcher, D. Hommel, D.J. As, U. Kohler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M.R. Correia, S. Pereira, Vanya Darakchieva, Bo Monemar, H. Amano, I. Akasaki and G. Wagner
Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry
Physica Status Solidi. C, Current topics in solid state physics, 2003.
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Vanya Darakchieva, M. Schubert, Jens Birch, A. Kasic, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
, 2003.
Web of Science® Times Cited: 3
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Tanja Paskova, Vanya Darakchieva, Plamen Paskov, U. Sodervall and Bo Monemar
Growth and separation related properties of HVPE-GaN free-standing films
Journal of Crystal Growth, 2002.
Web of Science® Times Cited: 25
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Ph.D. Theses
* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.
Ph.D., Lic. Theses
