Publications for Vanya Darakchieva
Co-author map based on ISI articles 2007-

Publications mentioned in social media 3 times*

Keywords

x-ray strain spectroscopic sapphire phonon p>we optical mg lattice inn infrared hydrogen graphene gan epitaxy epitaxial ellipsometry diffraction bulk a-plane

Journal Articles

Rositsa Yakimova, Tihomir Iakimov, Gholamreza Yazdi, Chamseddine Bouhafs, J. Eriksson, A. Zakharov, A. Boosalis, M. Schubert and Vanya Darakchieva
  Morphological and electronic properties of epitaxial graphene on SiC
  Physica. B, Condensed matter, 2014, 439, 54-59.
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Junaid Muhammad, Per Sandström, Justinas Palisaitis, Vanya Darakchieva, Ching-Lien Hsiao, Per Persson, Lars Hultman and Jens Birch
  Stress Evolution during Growth of GaN (0001)/Al2O3 (0001) by Reactive DC Magnetron Sputter Epitaxy
  Journal of Physics D: Applied Physics, 2014, 47(14), 145301.

Mengyao Xie, Ben Sedrine, L. Hong, Bo Monemar, S. Schöche, T. Hofmann, M. Schubert, X Wang, A. Yoshikawa, K. Wang, T. Araki, Vanya Darakchieva and Y. Nanishi
  Effect of Mg doping on the structural and free-charge carrier properties of InN
  Journal of Applied Physics, 2014, 115(16), 163504.
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S Schoeche, P Kuehne, T Hofmann, M Schubert, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén and Vanya Darakchieva
  Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
  Applied Physics Letters, 2013, 103(21), 212107.
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Nebiha Ben Sedrine, Agne Zukauskaite, Jens Birch, Lars Hultman and Vanya Darakchieva
  Bandgap Engineering and Optical Constants of YxAl1-xN Alloys
  Japanese Journal of Applied Physics, 2013, 52(8), .

P Kuehne, Vanya Darakchieva, Rositsa Yakimova, J D. Tedesco, R L. Myers-Ward, C R. Jr Eddy, D K. Gaskill, C M. Herzinger, J A. Woollam, M Schubert and T Hofmann
  Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect
 
Altmetric usage: 1

  Physical Review Letters, 2013, 111(7), e077402.
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Vanya Darakchieva, A. Boosalis, A. A. Zakharov, T. Hofmann, M. Schubert, T. E. Tiwald, Tihomir Iakimov, Remigijus Vasiliauskas and Rositsa Yakimova
  Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
  Applied Physics Letters, 2013, 102(21), 213116.
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 Web of Science® Times Cited: 2

S. Schöche, T. Hofmann, Vanya Darakchieva, N. Ben Sedrine, X. Wang, A. Yoshikawa and M. Schubert
  Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
  Journal of Applied Physics, 2013, 113(1), 013502.
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 Web of Science® Times Cited: 3

Andrej Furlan, Gueorgui Kostov Gueorguiev, Zsolt Czigány, Vanya Darakchieva, Slawomir Braun, Rosario Correia, Hans Högberg and Lars Hultman
  Structure and properties of phosphorus-carbide thin solid films
  Thin Solid Films, 2013, 548(2), 247-254.

A. Boosalis, T. Hofmann, Vanya Darakchieva, Rositsa Yakimova and M. Schubert
  Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry
 
Altmetric usage: 1

  Applied Physics Letters, 2012, 101(1), .
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 Web of Science® Times Cited: 5

Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman and Vanya Darakchieva
  Elastic constants, composition, and piezolectric polarization in InxAl1-xN: From ab initio calculations to experimental implications for the applicability of Vegards rule
  Physical Review B. Condensed Matter and Materials Physics, 2012, 86(15), 155310.
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 Web of Science® Times Cited: 2

N Catarino, E Nogales, N Franco, Vanya Darakchieva, S. M. C. Miranda, B Mendez, E Alves, J. G. Marques and K Lorenz
  Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
  Europhysics letters, 2012, 97(6), 68004.

T. Hofmann, P. Kuehne, S. Schöche, Jr-Tai Chen, Urban Forsberg, Erik Janzén, N. Ben Sedrine, C. M Herzinger, J. A Woollam, M. Schubert and Vanya Darakchieva
  Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
  Applied Physics Letters, 2012, 101(19), .
 Web of Science® Times Cited: 4

Vanya Darakchieva, K Lorenz, Mengyao Xie, E Alves, W J Schaff, T Yamaguchi, Y Nanishi, S Ruffenach, M Moret and O Briot
  Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209(1), 91-94.
 Web of Science® Times Cited: 3

Mi Zhou, Frank L Pasquale, Peter A Dowben, Alex Boosalis, Mathias Schubert, Vanya Darakchieva, Rositsa Yakimova, Lingmei Kong and Jeffry A Kelber
  Direct graphene growth on Co3O4(111) by molecular beam epitaxy
 
Altmetric usage: 1

  Journal of Physics: Condensed Matter, 2012, 24(7), 072201.
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 Web of Science® Times Cited: 7

Agnė Žukauskaitė, Christopher Tholander, Justinas Pališaitis, Per O. Å. Persson, Vanya Darakchieva, Nebiha Ben Sedrine, Ferenc Tasnádi, Björn Alling, Jens Birch and Lars Hultman
  YxAl1-xN Thin Films
  Journal of Physics D: Applied Physics, 2012, 45(42), 422001.
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 Web of Science® Times Cited: 4

N. Ben Sedrine, Vanya Darakchieva, D Lindgren, Bo Monemar, S. B. Che, Y Ishitani and A Yoshikawa
  Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry
  Physica Status Solidi. C, Current topics in solid state physics, 2011, 8(5), 1629-1632.
 Web of Science® Times Cited: 1

Junaid Muhammad, Daniel Lundin, Justinas Palisaitis, Ching-Lien Hsiao, Vanya Darakchieva, Jens Jensen, Per Persson, Per Sandström, W-J Lai, L-C Chen, K-H Chen, Ulf Helmersson, Lars Hultman and Jens Birch
  Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
  Journal of Applied Physics, 2011, 110(12), 123519.
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 Web of Science® Times Cited: 7

Mihails Cubarovs, Henrik Pedersen, Hans Högberg, Vanya Darakchieva, Jensen Jens, Per Persson and Anne Henry
  CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
  Physica Status Solidi. Rapid Research Letters, 2011, 5(10-11), 397-399.
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 Web of Science® Times Cited: 8

Vanya Darakchieva, K Lorenz, Mengyao Xie, E Alves, C L Hsiao, L C Chen, L W Tu, W J Schaff, T Yamaguchi and Y Nanishi
  Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
  Journal of Applied Physics, 2011, 110(6), 063535.
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 Web of Science® Times Cited: 1

Vanya Darakchieva, Mengyao Xie, D Rogalla, H-W Becker, K Lorenz, E Alves, S Ruffenach, M Moret and O Briot
  Free electron properties and hydrogen in InN grown by MOVPE
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(5), 1179-1182.
 Web of Science® Times Cited: 4

N Ben Sedrine, C Bouhafs, M Schubert, J C Harmand, R Chtourou and Vanya Darakchieva
  Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry
  THIN SOLID FILMS, 2011, 519(9), 2838-2842.
 Web of Science® Times Cited: 1

Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Mengyao Xie, Vanya Darakchieva, Jean-Francois Carlin, Nicolas Grandjean, Jens Birch, Lars Hultman and Per O.Å. Persson
  Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopy
  physica status solidi (RRL) – Rapid Research Letters, 2011, 5(2), 50-52.
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 Web of Science® Times Cited: 9

K Lorenz, S Magalhaes, N Franco, N. P. Barradas, Vanya Darakchieva, E Alves, S Pereira, M. R. Correia, F Munnik, R. W. Martin, K. P. O´Donnell and I. M. Watson
  Al1xInxN/GaN bilayers: Structure,morphology, and optical properties
  Physica status solidi. B, Basic research, 2010, 247(7), 1740-1746.

N. Ben Sedrine, C. Bouhafs, J.C. Harmand, R. Chtourou and Vanya Darakchieva
  Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet
  Applied Physics Letters, 2010, 97(20), 201903.
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 Web of Science® Times Cited: 4

Vanya Darakchieva, Mengyao Xie, N Franco, F Giuliani, B Nunes, E Alves, C L Hsiao, L C Chen, T Yamaguchi, Y Takagi, K Kawashima and Y Nanishi
  Structural anisotropy of nonpolar and semipolar InN epitaxial layers
  JOURNAL OF APPLIED PHYSICS, 2010, 108(7), 073529.
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 Web of Science® Times Cited: 10

Vanya Darakchieva, K Lorenz, N P Barradas, E Alves, Bo Monemar, M Schubert, N Franco, C L Hsiao, L C Chen, W J Schaff, L W Tu, T Yamaguchi and Y Nanishi
  Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
  APPLIED PHYSICS LETTERS, 2010, 96(8), 081907.
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 Web of Science® Times Cited: 20

K Lorenz, I. S. Roqan, N Franco, K. P. O´Donnell, Vanya Darakchieva, E Alves, C Trager-Cowan, R.W. Martin, D. J. As and M Panfilova
  Europium doping of zincblende GaN by ion implantation
  Journal of Applied Physics, 2009, 105(11), 113507.

Vanya Darakchieva, N P Barradas, Mengyao Xie, K Lorenz, E Alves, M Schubert, Per Persson, Finn Giuliani, F Munnik, Ching-Lien Hsiao, L W Tu and W J Schaff
  Role of impurities and dislocations for the unintentional n-type conductivity in InN
  PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4476-4481.
 Web of Science® Times Cited: 8

Vanya Darakchieva, M Schubert, T Hofmann, Bo Monemar, Ching-Lien Hsiao, Ting-Wei Liu, Li-Chyong Chen, W J Schaff, Y Takagi and Y Nanishi
  Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
  APPLIED PHYSICS LETTERS, 2009, 95(20), 202103.
 Web of Science® Times Cited: 14

Vanya Darakchieva, T Hofmann, M Schubert, Bo Sernelius, Bo Monemar, Per Persson, Finn Giuliani, E Alves, H Lu and W J Schaff
  Free electron behavior in InN: On the role of dislocations and surface electron accumulation
  Applied Physics Letters, 2009, 94(2), 022109.
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 Web of Science® Times Cited: 24

Vanya Darakchieva
  Infrared generalized ellipsometry on non-polar and superlattice group-III nitride films: Strain and phonon anisotropy
  Physica Status Solidi (A) Applications and Materials, 2008, 205(4), 905-913.
 Web of Science® Times Cited: 6

Vanya Darakchieva, Bo Monemar, A. Usui, M. Saenger and M. Schubert
  Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
  Journal of Crystal Growth, 2008, 310(5), 959-965.
 Web of Science® Times Cited: 6

M. Gonschorek, J.-F. Carlin, E. Feltin, M.A. Py, N. Grandjean, Vanya Darakchieva, Bo Monemar, M. Lorenz and G. Ramm
  Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)
  Journal of Applied Physics, 2008, 103(9), 093714.
 Web of Science® Times Cited: 83

T. Hofmann, Vanya Darakchieva, Bo Monemar, H. Lu, W. J. Schaff and M. Schubert
  Optical hall effect in hexagonal InN
  Journal of Electronic Materials, 2008, 37(5), 611-615.
 Web of Science® Times Cited: 16

Vanya Darakchieva, Manfred Beckers, Mengyao Xie, Lars Hultman, Bo Monemar, J-. F. Carlin, E. Feltin, M. Gonschorek and N. Grandjean
  Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-x Inx N films grown on sapphire
  Journal of Applied Physics, 2008, 103(10), 103513.
 Web of Science® Times Cited: 28

Vanya Darakchieva, Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman, Bo Monemar, J Kamimura and K Kishino
  Lattice parameters, deviations from Vegards rule, and E-2 phonons in InAlN
  Applied Physics Letters, 2008, 93(26), 261908.
 Web of Science® Times Cited: 20

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
  Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
 Web of Science® Times Cited: 17

Vanya Darakchieva, T. Paskova, M. Schubert, Plamen Paskov, Hans Arwin, Bo Monemar, D. Hommel, M. Heuken, J. Off, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
  Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
  Journal of Crystal Growth, 2007, 300(1), 233-238.
 Web of Science® Times Cited: 4

Vanya Darakchieva, Bo Monemar and A. Usui
  On the lattice parameters of GaN
  Applied Physics Letters, 2007, 91(3), 031911.
 Web of Science® Times Cited: 29

Vanya Darakchieva, Tanja Paskova, M. Schubert, Hans Arwin, Plamen Paskov, Bo Monemar, D. Hommel, J. Off, F. Scholz, M. Heuken, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
  Anisotropic strain and phonon deformation potentials in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2007, 75(19), 195217.
 Web of Science® Times Cited: 46

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
  Journal of Crystal Growth, 2007, 307(2), 334-340.
 Web of Science® Times Cited: 58

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Hans Arwin, M Schubert, Bo Monemar, S Figge, D Hommel, BA Haskell, PT Fini and S Nakamura
  Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
  Physica status solidi. B, Basic research, 2006, 243(7), 1594-1598.
 Web of Science® Times Cited: 2

T. Hofmann, T. Chavdarov, Vanya Darakchieva, H. Lu, W.J. Schaff and M. Schubert
  Anisotropy of the Γ-point effective mass and mobility in hexagonal InN
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 3(6), 1854-1857.

T. Paskova, Vanya Darakchieva, Plamen Paskov, Bo Monemar, T. Suski, M. Bockowski, N. Ashkenov and M. Schubert
  Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high temperature annealing
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 1475-1478.

T. Paskova, R. Kroeger, S. Figge, D. Hommel, Vanya Darakchieva, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tutor
  High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
  Applied Physics Letters, 2006, 89(5), 051914.
 Web of Science® Times Cited: 52

T. Paskova, D. Hommel, Plamen Paskov, Vanya Darakchieva, Bo Monemar, M. Bockowski, T. Suski, I. Grzegory, T. Tuomisto, K. Saarinen, N. Ashkenov and M. Schubert
  Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
  Applied Physics Letters, 2006, 88(14), 141909.
 Web of Science® Times Cited: 21

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E Valcheva, Per Persson, B Arnaudov, S Tungasmitta and Bo Monemar
  Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
  Journal of Crystal Growth, 2005, 281(1), 55-61.
 Web of Science® Times Cited: 48

Plamen Paskov, Peder Bergman, Vanya Darakchieva, Tanja Paskova, Bo Monemar, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Photoluminescence of GaN/AlN superlattices grown by MOCVD
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2345-2348.

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E. Valcheva, Per Persson, B. Arnaudov, S. Tungasmita and Bo Monemar
  Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2027-2031.

Vanya Darakchieva, E. Valcheva, Plamen Paskov, M. Schubert, Tanja Paskova, Bo Monemar, H. Amano and I. Akasaki
  Phonon mode behavior in strained wurtzite AlN/GaN superlattices
  Physical Review B. Condensed Matter and Materials Physics, 2005, 71(11), 115329.
 Web of Science® Times Cited: 17

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
  Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
  Journal of Applied Physics, 2005, 97(1), 013517.
 Web of Science® Times Cited: 23

Tanja Paskova, Vanya Darakchieva, E Valcheva, Plamen Paskov, Ivan Gueorguiev Ivanov, Bo Monemar, T Bottcher, C Roder and D Hommel
  Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
  Journal of Electronic Materials, 2004, 33(5), 389-394.
 Web of Science® Times Cited: 15

Tanja Paskova, Plamen Paskov, E Valcheva, Vanya Darakchieva, Jens Birch, A Kasic, B Arnaudov, Sukkaneste Tungasmita and Bo Monemar
  Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
  Physica status solidi. A, Applied research, 2004, 201(10), 2265-2270.
 Web of Science® Times Cited: 12

Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical investigation of AlGaN/GaN quantum wells and superlattices
  Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.

A Atanassov, M Baleva, Vanya Darakchieva and E Goranova
  Grazing incident asymmetric X-ray diffraction of beta-FeSi2 layers, produced by ion beam synthesis
  Vacuum, 2004, 76(02-Mar), 277-280.
 Web of Science® Times Cited: 3

Vanya Darakchieva, Plamen Paskov, E. Valcheva, Tanja Paskova, M. Schubert, C. Bundesmann, H. Lu, W.J. Schaff and Bo Monemar
  Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties
  Superlattices and Microstructures, 2004, 36(4-6), 573-580.
 Web of Science® Times Cited: 11

Vanya Darakchieva, Jens Birch, M Schubert, Tanja Paskova, S Tungasmita, G Wagner, A Kasic and Bo Monemar
  Strain-related structural and vibrational properties of thin epitaxial AIN layers
  Physical Review B. Condensed Matter and Materials Physics, 2004, 70(4), 045411.
 Web of Science® Times Cited: 31

Tanja Paskova, Plamen Paskov, E. M. Goldys, Vanya Darakchieva, U Södervall, M Godlewski, M Zielinski, E Valcheva, C Carlström, Qamar Ul Wahab and Bo Monemar
  Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
  Journal of Crystal Growth, 2004, 273( 1-2), 118-128.
 Web of Science® Times Cited: 5

Vanya Darakchieva, Plamen Paskov, E Valcheva, Tanja Paskova, Bo Monemar, M Schubert, H Lu and W.J. Schaff
  Deformation potentials of the E1 (TO) and E2 modes of InN
  Applied Physics Letters, 2004, 84(18), 3636-3638.
 Web of Science® Times Cited: 29

N. Ashkenov, B.N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, D. Spemann, E.M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, H. Neumann, Vanya Darakchieva, Hans Arwin and Bo Monemar
  Infrared dielectric functions and phonon modes of high-quality ZnO films
  Journal of Applied Physics, 2003, 93(1), 126-133.
 Web of Science® Times Cited: 305

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
  Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
  Physica status solidi. A, Applied research, 2003, 195(3), 516-522.
 Web of Science® Times Cited: 13

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, E. Valcheva, Bo Monemar and M. Heuken
  Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
  Applied Physics Letters, 2003, 82(5), 703-705.
 Web of Science® Times Cited: 23

Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
  In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
  Journal of Crystal Growth, 2003, 257(1-2), 1-6.
 Web of Science® Times Cited: 4

Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Vanya Darakchieva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
  MRS Internet journal of nitride semiconductor research, 2002, 7(7), 1.
 Web of Science® Times Cited: 8

Vanya Darakchieva, Jens Birch, Plamen Paskov, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth
  Physica status solidi. A, Applied research, 2002, 190(1), 59-64.
 Web of Science® Times Cited: 3

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, Jens Birch, Sukkaneste Tungasmita and Bo Monemar
  Deformation potentials of the E-1(TO) mode in AlN
  Applied Physics Letters, 2002, 80(13), 2302-2304.
 Web of Science® Times Cited: 18

Plamen Paskov, Vanya Darakchieva, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
  Physica status solidi. B, Basic research, 2002, 234(3), 892-896.
 Web of Science® Times Cited: 3

Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Sukkaneste Tungasmita, Jens Birch and Bo Monemar
  Defect reduction in HVPE growth of GaN and related optical spectra
  Physica status solidi. A, Applied research, 2001, 183(1), 197-203.
 Web of Science® Times Cited: 9

Tanja Paskova, Plamen Paskov, EM Goldys, Vanya Darakchieva, U Sodervall, M Godlewski, M Zielinski, E Valcheva, CF Carlstrom and Qamar Ul Wahab
  Mass transport growth and properties of hydride vapour phase epitaxy GaN
  Physica status solidi. A, Applied research, 2001, 188(1), 447-451.
 Web of Science® Times Cited: 2

Chapters in Books

Vanya Darakchieva, Tanja Paskova and M. Schubert
  Optical phonons in a-plane GaN under anisotropic strain
  Group-III nitrides with nonpolar surfaces: growth, properties and devices, Wiley, 2008, 219-253.


Conference Articles

Alexander Boosalis, Tino Hofmann, Vanya Darakchieva, Rositza Yakimova, Tom Tiwald and Mathias Schubert
  Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC
  MRS Proceedings Volume 1407, 2012.


Stefan Schöche, Tino Hofmann, Nebiha Ben Sedrine, Vanja Darakchieva, Xinqiang Wang, Akihiko Yoshikawa and Mathias Schubert
  Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
  MRS Proceedings Volume 1396, 2012.


N. P. Barradas, K Lorenz, Vanya Darakchieva and E Alves
  A Double Scattering Analytical Model For Elastic Recoil Detection Analysis
  AIP Conference Proceedings, Volume 1336, 2011.


L Lorenz, S. M. C. Miranda, N. P. Barradas, E Alves, Y Nanishi, W. J. Schaff, L. W. Tu and Vanya Darakchieva
  Hydrogen In Group‐III Nitrides: An Ion Beam Analysis Study
  AIP Conference Proceedings, Volume 1336, 2011.


 Web of Science® Times Cited: 1

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC using MTS as chloride-based precursor
  Materials Science Forum, Vol. 600-603, 2009.


 Web of Science® Times Cited: 4

Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Sernelius, Finn Giuliani, Mengyao Xie, Per O. A. Persson, Bo Monemar, W. J. Schaff, C.-L. Hsiao, L.-C. Chen and Y Nanishi
  Unravelling the free electron behavior in InN
  Optoelectronic and Microelectronic Materials and Devices, 2008, 2008.


Mengyao Xie, Mengyao Xie, Vanya Darakchieva, Vanya Darakchieva, Bo Monemar, Bo Monemar, J. Kamimura, J. Kamimura, K. Kishino and K. Kishino
  Lattice parameters and optical phonons
  IWN 2008,2008, 2008.


Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, Galia Pozina, Fredrik Karlsson, Vanya Darakchieva, Plamen Paskov and Bo Monemar
  DAP emission band in a carbon doped (1-101)GaN grown ob (001) Si substrate
  Phys. Stat. Sol. (c) Vol. 6, 2008.


 Web of Science® Times Cited: 3

T. Hofmann, Vanya Darakchieva, Bo Monemar, H. Lu, W.J. Schaff, L.-C. Chen, Y. Nanishi and M. Schubert
  Assessment of the surface electron properties of polar and non-polar InN surfaces
  MRS Fall Meeting,2008, 2008.


Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Monemar, H. Lu, W.J. Schaff, C.-L. Hsiao, T.-W. Liu, L.-C. Chen, D. Muto and Y. Nanishi
  New insight into the free carrier properties of InN
  International workshop on Nitride semiconductors IWN2008,2008, 2008.


Vanya Darakchieva
  Unraveling the free electron behavior in InN
  International Conference on electronic Materials 2008, IUMRS-ICEM 2008,2008, 2008.


Vanya Darakchieva, Manfred Beckers, Lars Hultman, Mengyao Xie, Bo Monemar, J.-F Carlin and N. Grandjean
  Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule
  Physica Status Solidi (C) Current Topics in Solid State Physics, 2008.


 Web of Science® Times Cited: 1

Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
  Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
  ICNS-7,2007, 2007.


Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva and Erik Janzén
  Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
  Surface and Coatings Technology, Volume 201, Issue 22-23 SPEC. ISS., 2007.


 Web of Science® Times Cited: 9

Vanya Darakchieva, Bo Monemar, Tanja Paskova, S. Einfeldt, D Hommel and S. Lourdudoss
  Phonons in strained AlGaN/GaN superlattices
  6th International Symposium on Blue Laser and Light Emitting Diodes,2006, 2007.


 Web of Science® Times Cited: 3

Vanya Darakchieva, T. Hofmann, M. Schubert, H. Lu, W.J. Schaff and Bo Monemar
  Conduction band effective mass anisotropy and nonparabolicity of InN
  Proc. of 3rd Workshop on Indium Nitride, 2006.


Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Roland Kröger, Detlef Hommel, Bo Monemar, Sebastian Lourdudoss, Edward Preble, Andrew Hanser, Mark N. Williams and Michael Tudor
  Strain-free low-defect-density bulk GaN with nonpolar orientation
  MRS Proceedings 2006 MRS Fall Meeting: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices, 2006.


Hans Arwin, Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, Mattias Schubert, S Figge, D Hommel, B A Haskell, P T Fini and S Nakamura
  Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
  ICSN-6,2005, 2005.


Tanja Paskova, T. Suski, M. Bockowski, Plamen Paskov, Vanya Darakchieva, Bo Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Röder and D. Hommel
  High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress
  MRS Fall Meeting,2004, 2005.


Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
  Growth of GaN on a-plane sapphire: In-plane epitaxial relationships and lattice parameters
  Physica status solidi. B, Basic research, 2003.


 Web of Science® Times Cited: 6

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Bottcher, D. Hommel, D.J. As, U. Kohler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M.R. Correia, S. Pereira, Vanya Darakchieva, Bo Monemar, H. Amano, I. Akasaki and G. Wagner
  Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry
  Physica Status Solidi. C, Current topics in solid state physics, 2003.


Vanya Darakchieva, M. Schubert, Jens Birch, A. Kasic, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
  , 2003.


 Web of Science® Times Cited: 3

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, U. Sodervall and Bo Monemar
  Growth and separation related properties of HVPE-GaN free-standing films
  Journal of Crystal Growth, 2002.


 Web of Science® Times Cited: 26

Ph.D. Theses

Mengyao Xie
  Structural and elastic properties of InN and InAlN with different surface orientations and doping
  2012.


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