Publications for Valdas Jokubavicius
Co-author map based on ISI articles 2007-
Journal Articles
Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
Materials Science Forum, 2013, 740-742, 19-22.
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Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching
OPTICAL MATERIALS EXPRESS, 2013, 3(1), 86-94.
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I Shtepliuk, Volodymyr Khranovskyy, G Lashkarev, V. Khomyak, V Lazorenko, A Ievtushenko, Mikael Syväjärvi, Valdas Jokubavicius and Rositsa Yakimova
Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
Solid-State Electronics, 2013, 81, 72-77.
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Xiaolong Zhu, Yiyu Ou, Valdas Jokubavicius, Mikael Syväjärvi, Ole Hansen, Haiyan Ou, N. Asger Mortensen and Sanshui Xiao
Broadband light-extraction enhanced by arrays of whispering gallery resonators
Applied Physics Letters, 2012, 101(24), .
Web of Science® Times Cited: 2 |
Yiyu Ou, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures
Optics Letters, 2012, 37(18), 3816-3818.
Web of Science® Times Cited: 3 |
Jianwu Sun, T. Robert, A. Andreadou, A. Mantzari, Valdas Jokubavicius, Rositsa Yakimova, J. Camassel, S. Juillaguet, E. K. Polychroniadis and Mikael Syväjärvi
Shockley-Frank stacking faults in 6H-SiC
Journal of Applied Physics, 2012, 111, 113527.
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Jianwu Sun, Satoshi Kamiyama, Valdas Jokubavicius, H. Peyre, Rositsa Yakimova, S. Juillaguet and Mikael Syväjärvi
Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
Journal of Physics D, 2012, 45(23), 235107.
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Yiyu Ou, Valdas Jokubavicius, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC
Physica Scripta, 2012, T148, 014003.
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Mikael Syväjärvi, J. Müller, Jianwu Sun, Vytautas Grivickas, Yiyu Ou, Valdas Jokubavicius, Philip Hens, M. Kaisr, Kanaparin Ariyawong, K. Gulbinas, Rickard Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou
Fluorescent SiC as a new material for white LEDs
Physica scripta. T, 2012, T148, 014002.
Web of Science® Times Cited: 2 |
Jianwu Sun, Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama and Mikael Syväjärvi
Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
Thin Solid Films, 2012, 522, 33-35.
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Valdas Jokubavicius, P. Hens, Richard Liljedahl, Jianwu Sun, M. Kaiser, P. Wellmann, S. Sano, Rositza Yakimova, S. Kamiyama and Mikael Syväjärvi
Effects of source material on epitaxial growth of fluorescent SiC
Thin Solid Films, 2012, 522, 7-10.
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Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, G Wagner, Rositsa Yakimova, P Wellmann and Mikael Syväjärvi
Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
Materials letters (General ed.), 2012, 67(1), 300-302.
Fulltext Web of Science® Times Cited: 1 |
Yiyu Ou, Valdas Jokubavicius, Philip Hens, Michl Kaiser, Peter Wellmann, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
Optics Express, 2012, 20(7), 7575-7579.
Web of Science® Times Cited: 4 |
Valdas Jokubavicius, Richard Liljedahl, Yiyu Ou, Haiyan Ou, Satoshi Kamiyama, Rositza Yakimova and Mikael Syväjärvi
Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
Materials Science Forum, 2011, 679-680, 103-106.
Fulltext Web of Science® Times Cited: 3 |
Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
Donor-acceptor-pair emission characterization in N-B dopedf luorescent in SiC
Optical Materials Express, 2011, 1(8), 1439-1446.
Web of Science® Times Cited: 11 |
Conference Articles
Valdas Jokubavicius, Ho Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.
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Kanaparin Ariyawong, Valdas Jokubavicius, Rickard Liljedahl and Mikael Syväjärvi
Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.
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Michl Kaiser, Thomas Hupfer, Valdas Jokubavicius, Saskia Schimmel, Mikael Syväjärvi, Yiyu Ou, Haiyan Ou, Margareta Linnarsson and Peter Wellmann
Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.
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Thomas Hupfer, Philip Hens, Michl Kaiser, Valdas Jokubavicius, Mikael Syväjärvi and Peter Wellmann
Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.
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Margareta Linnarsson, Michl Kaiser, Rickard Liljedahl, Valdas Jokubavicius, Yiyu Ou, Peter Wellmann, Haiyan Ou and Mikael Syväjärvi
Lateral Boron Distribution in Polycrystalline SiC Source Materials
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.
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Yiyu Ou, Valdas Jokubavicius, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.
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M. Asghar, F. Iqbal, Sadia Municha Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
-, 2012.
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M. Asghar, F. Iqbal, Sadia Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
26th International Conference on Defects in Semiconductors, 2012.
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Valdas Jokubavicius, Björn Lundqvist, Philip Hens, Rickard Liljedahl, Rositza Yakimova, Satoshi Kamiyama and Mikael Syväjärvi
On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
ICSCRM2011, 2012.
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Yiyu Ou, Valdas Jokubavicius, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Satoshi Kamiyama, Zhaoyue Lu, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
Photoluminescence and Raman spectroscopy characterization of boron and nitrogen-doped 6H silicon carbide
ICSCRM2011, 2012.
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Jianwu Sun, T. Robert, Valdas Jokubavicius, S. Juillaguet, Rositza Yakimova, Mikael Syväjärvi and J. Camassel
Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates
ICSCRM2011, 2012.
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Valdas Jokubavicius, Justinas Palisaitis, Remigijus Vasiliauskas, Rositsa Yakimova and Mikael Syväjärvi
Macrodefects in cubic silicon carbide crystals
Materials Science Forum, Vols. 645-648, 2010.
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Ph.D., Lic. Theses
