Publications for Valdas Jokubavicius
Co-author map based on ISI articles 2007-

Keywords

white temperature substrates sublimation stacking silicon sic respectively photoluminescence off-axis nitrogen luminescence fluorescent faults emission doping carbide 6h-sic 3c-sic (3

Journal Articles

Murali Murugesan, Carl Zanden, Xin Luo, Lilei Ye, Valdas Jokubavicius, Mikael Syväjärvi and Johan Liu
  A carbon fiber solder matrix composite for thermalmanagement of microelectronic devices
  Journal of Materials Chemistry C, 2014, 2(35), 7184-7187.

G Manolis, K Gulbinas, V. Grivickas, Valdas Jokubavicius, Margareta Linnarsson and Mikael Syväjärvi
  Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012006.

V. Gavryushin, K Gulbinas, V. Grivickas, M. Karaliunas, M. Stasiūpnas, Valdas Jokubavicius, Jianwu Sun and Mikael Syväjärvi
  Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012003.

Karolis Gulbinas, P, Ščajev, V. Bikbajavas, V. Grivickas, O.V. Korolik, A.V Mazanik, A.K. Fedotov, Valdas Jokubavicius, Margareta Linnarsson, Mikael Syväjärvi and Satoshi Kamiyama
  Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012005.

Pawel Kwasnicki, Valdas Jokubavicius, Jianwu Sun, H. Peyre, Rositsa Yakimova, Mikael Syväjärvi, J. Camasse and S. Juillaguet
  Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
  Materials Science Forum, 2014, 778-780, 243-246.

Yiyu Ou, Xiaolong Zhu, Valdas Jokubavicius, Rositsa Yakimova, N. Asger Mortensen, Mikael Syväjärvi, Sanshui Xiao and Haiyan Ou
  Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures
  Scientific Reports, 2014, 4, 4662.
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 Web of Science® Times Cited: 1

V. Grivickas, K Gulbinas, Valdas Jokubavicius, Jianwu Sun, M. Karaliunas, Satoshi Kamiyama, Margareta Linnarsson, Michl Kaiser, Peter Wellmann and Mikael Syväjärvi
  Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012004.

Michl Kaiser, Saskia Schimmel, Valdas Jokubavicius, Margareta Linnarsson, Haiyan Ou, Mikael Syväjärvi and Peter Wellmann
  Nucleation and growth of polycrystalline SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012001.

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta K. Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi and Peter Wellmann
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012002.
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Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl and Mikael Syväjärvi
  Advances in wide bandgap SiC for optoelectronics
  European Physical Journal B: Condensed Matter Physics, 2014, 87, 58.

I Shtepliuk, Volodymyr Khranovskyy, G Lashkarev, V. Khomyak, V Lazorenko, A Ievtushenko, Mikael Syväjärvi, Valdas Jokubavicius and Rositsa Yakimova
  Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
  Solid-State Electronics, 2013, 81, 72-77.
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 Web of Science® Times Cited: 5

Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
  Materials Science Forum, 2013, 740-742, 19-22.

Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching
  OPTICAL MATERIALS EXPRESS, 2013, 3(1), 86-94.
 Web of Science® Times Cited: 2

Valdas Jokubavicius, P. Hens, Richard Liljedahl, Jianwu Sun, M. Kaiser, P. Wellmann, S. Sano, Rositza Yakimova, S. Kamiyama and Mikael Syväjärvi
  Effects of source material on epitaxial growth of fluorescent SiC
  Thin Solid Films, 2012, 522, 7-10.
 Web of Science® Times Cited: 2

Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, G Wagner, Rositsa Yakimova, P Wellmann and Mikael Syväjärvi
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  Materials letters (General ed.), 2012, 67(1), 300-302.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Xiaolong Zhu, Yiyu Ou, Valdas Jokubavicius, Mikael Syväjärvi, Ole Hansen, Haiyan Ou, N. Asger Mortensen and Sanshui Xiao
  Broadband light-extraction enhanced by arrays of whispering gallery resonators
  Applied Physics Letters, 2012, 101(24), .
 Web of Science® Times Cited: 5

Yiyu Ou, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures
  Optics Letters, 2012, 37(18), 3816-3818.
 Web of Science® Times Cited: 7

Jianwu Sun, T. Robert, A. Andreadou, A. Mantzari, Valdas Jokubavicius, Rositsa Yakimova, J. Camassel, S. Juillaguet, E. K. Polychroniadis and Mikael Syväjärvi
  Shockley-Frank stacking faults in 6H-SiC
  Journal of Applied Physics, 2012, 111, 113527.
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 Web of Science® Times Cited: 2

Jianwu Sun, Satoshi Kamiyama, Valdas Jokubavicius, H. Peyre, Rositsa Yakimova, S. Juillaguet and Mikael Syväjärvi
  Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
  Journal of Physics D: Applied Physics, 2012, 45(23), 235107.
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Yiyu Ou, Valdas Jokubavicius, Philip Hens, Michl Kaiser, Peter Wellmann, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
  Optics Express, 2012, 20(7), 7575-7579.
 Web of Science® Times Cited: 8

Mikael Syväjärvi, J. Müller, Jianwu Sun, Vytautas Grivickas, Yiyu Ou, Valdas Jokubavicius, Philip Hens, M. Kaisr, Kanaparin Ariyawong, K. Gulbinas, Rickard Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou
  Fluorescent SiC as a new material for white LEDs
  Physica scripta. T, 2012, T148, 014002.
 Web of Science® Times Cited: 13

Jianwu Sun, Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama and Mikael Syväjärvi
  Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
  Thin Solid Films, 2012, 522, 33-35.
 Web of Science® Times Cited: 2

Yiyu Ou, Valdas Jokubavicius, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC
  Physica Scripta, 2012, T148, 014003.

Valdas Jokubavicius, Richard Liljedahl, Yiyu Ou, Haiyan Ou, Satoshi Kamiyama, Rositza Yakimova and Mikael Syväjärvi
  Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
  Materials Science Forum, 2011, 679-680, 103-106.
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 Web of Science® Times Cited: 4

Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Donor-acceptor-pair emission characterization in N-B doped fluorescent in SiC
  Optical Materials Express, 2011, 1(8), 1439-1446.
 Web of Science® Times Cited: 21

Conference Articles

Martin Wilhelm, Michl Kaiser, Valdas Jakubavicius, Mikael Syväjärvi, Y. Ou, H. Ou and P. Wellmann
  Photoluminescence topography of fluorescent SiC and its corresponding source crystals
  Silicon Carbide and Related Materials 2012, 2013.


Saskia Schimmel, Michl Kaiser, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Jianwu Sun, Rositsa Yakimova, Yi Yu Ou, Hai Yan Ou, Margareta K. Linnarsson, Peter Wellmann and Mikael Syväjärvi
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 1

Valdas Jokubavicius, Ho-Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Towards bulk-like 3C-SiC growth using low off-axis substrates
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Valdas Jokubavicius, Ho Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Kanaparin Ariyawong, Valdas Jokubavicius, Rickard Liljedahl and Mikael Syväjärvi
  Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Michl Kaiser, Thomas Hupfer, Valdas Jokubavicius, Saskia Schimmel, Mikael Syväjärvi, Yiyu Ou, Haiyan Ou, Margareta Linnarsson and Peter Wellmann
  Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Thomas Hupfer, Philip Hens, Michl Kaiser, Valdas Jokubavicius, Mikael Syväjärvi and Peter Wellmann
  Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Margareta Linnarsson, Michl Kaiser, Rickard Liljedahl, Valdas Jokubavicius, Yiyu Ou, Peter Wellmann, Haiyan Ou and Mikael Syväjärvi
  Lateral Boron Distribution in Polycrystalline SiC Source Materials
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Yiyu Ou, Valdas Jokubavicius, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


M. Asghar, F. Iqbal, Sadia Municha Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
  -, 2012.


 Web of Science® Times Cited: 1

M. Asghar, F. Iqbal, Sadia Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
  26th International Conference on Defects in Semiconductors, 2012.


 Web of Science® Times Cited: 1

Valdas Jokubavicius, Björn Lundqvist, Philip Hens, Rickard Liljedahl, Rositza Yakimova, Satoshi Kamiyama and Mikael Syväjärvi
  On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
  ICSCRM2011, 2012.


 Web of Science® Times Cited: 2

Yiyu Ou, Valdas Jokubavicius, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Satoshi Kamiyama, Zhaoyue Lu, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Photoluminescence and Raman spectroscopy characterization of boron and nitrogen-doped 6H silicon carbide
  ICSCRM2011, 2012.


Jianwu Sun, T. Robert, Valdas Jokubavicius, S. Juillaguet, Rositza Yakimova, Mikael Syväjärvi and J. Camassel
  Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates
  ICSCRM2011, 2012.


Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells
  2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012.


Valdas Jokubavicius, Justinas Palisaitis, Remigijus Vasiliauskas, Rositsa Yakimova and Mikael Syväjärvi
  Macrodefects in cubic silicon carbide crystals
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 2  Fulltext PDF