Publications for Urban Forsberg
Co-author map based on ISI articles 2007-

Publications mentioned in social media 2 times*

Keywords

thickness temperature silicon sic reactor quantum qds pyramids optical mocvd ingan incorporation hydrogen hot-wall gan epitaxial emission doping cvd 4h-sic

Journal Articles

Lina Tengdelius, Jens Birch, Jun Lu, Lars Hultman, Urban Forsberg, Erik Janzén and Hans Högberg
  Magnetron sputtering of epitaxial ZrB2 thin films on 4H-SiC(0001) and Si(111)
  Physica Status Solidi (a), 2014, 211(3), 636-640.

Lina Tengdelius, Mattias Samuelsson, Jens Jensen, Jun Lu, Lars Hultman, Urban Forsberg, Erik Janzén and Hans Högberg
  Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)
  Thin Solid Films, 2014, 550, 285-290.

Anders Lundskog, Chih-Wei Hsu, K. Fredrik Karlsson, Supaluck Amloy, Daniel Nilsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
  Light: Science & Applications, 2014, 3, e139.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Justinas Palisaitis, Anders Lundskog, Urban Forsberg, Erik Janzén, Jens Birch, Lars Hultman and Per Persson
  Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy
  Journal of Applied Physics, 2014, 115(3), 034302.

Chih-Wei Hsu, Evgenii Moskalenko, Martin Eriksson, Anders Lundskog, Fredrik K. Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  The charged exciton in an InGaN quantum dot on a GaN pyramid
  Applied Physics Letters, 2013, 103(1), .
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Jr-Tai Chen, Urban Forsberg and Erik Janzén
  Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
 
Altmetric usage: 2

  Applied Physics Letters, 2013, 102(19), 193506.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
  The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
  Applied Physics Letters, 2013, 102(13), 132113.
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Anders Lundskog, Chih-Wei Hsu, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
  Journal of Crystal Growth, 2013, 363, 287-293.
   Fulltext  PDF  

Per Olof Holtz, Chi-Wei Hsu, Anders Lundskog, K. Fredrik Karlsson, Urban Forsberg and Erik Janzén
  Deterministic Single InGaN Quantum Dots grown on GaN Micro-Pyramid Arrays
  Advanced Materials Research, 2013, 646, 34-37.

T. Hofmann, P. Kuehne, S. Schöche, Jr-Tai Chen, Urban Forsberg, Erik Janzén, N. Ben Sedrine, C. M Herzinger, J. A Woollam, M. Schubert and Vanya Darakchieva
  Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
  Applied Physics Letters, 2012, 101(19), .
 Web of Science® Times Cited: 5

Hsu-Cheng Hsu, Geng-Ming Hsu, Yu-shiung Lai, Zhe Chuan Feng, Shuo-Yen Tseng, Anders Lundskog, Urban Forsberg, Erik Janzén, Kuei-Hsien Chen and Li-Chyong Chen
  Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects
  Applied Physics Letters, 2012, 101(12), 121902.
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Anders Lundskog, Justinas Palisaitis, Chih-Wei Hsu, Martin Eriksson, Lars Hultman, Per Persson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
  Nanotechnology, 2012, 23(30), 305708.
 Web of Science® Times Cited: 4

Anders Lundskog, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Morphology control of hot-wall MOCVD selective area -grown hexagonal GaN pyramids
  Crystal Growth & Design, 2012, 12(11), 5491-5496.
 Web of Science® Times Cited: 3

Per-Olof Holtz, Chih-Wei Hsu, L A Larsson, K Fredrik Karlsson, Daniel Dufåker, Anders Lundskog, Urban Forsberg, Erik Janzén, Evgenii Moskalenko, V Dimastrodonato, L Mereni and E Pelucchi
  Optical characterization of individual quantum dots
  Physica. B, Condensed matter, 2012, 407(10), 1472-1475.

Anelia Kakanakova-Georgieva, Urban Forsberg and Erik Janzén
  Carbon-tuned cathodoluminescence of semi-insulating GaN
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(9), 2182-2185.
 Web of Science® Times Cited: 4

Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays
  Nano letters (Print), 2011, 11(6), 2415-2418.
 Web of Science® Times Cited: 17

R J T J T Simms, M J Uren, T Martin, J Powell, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Erik Janzén and M Kuball
  Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
  SOLID-STATE ELECTRONICS, 2011, 55(1), 5-7.

M. Fagerlind, F. Allerstam, E.O. Sveinbjornsson, N. Rorsman, Anelia Kakanakova-Georgieva, Anders Lundskog, Urban Forsberg and Erik Janzén
  Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
  Journal of Applied Physics, 2010, 108(1), 014508.
   Fulltext  PDF  
 Web of Science® Times Cited: 18

Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
  Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313.
 Web of Science® Times Cited: 4

Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Rafal Ciechonski and Erik Janzén
  Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
  Journal of Crystal Growth, 2009, 311(10), 3007-3010.
   Fulltext  PDF  
 Web of Science® Times Cited: 17

Gernot J Riedel, James W Pomeroy, Keith P Hilton, Jessica O Maclean, David J Wallis, Michael J Uren, Trevor Martin, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Galia Pozina, Erik Janzén, Richard Lossy, Reza Pazirandeh, Frank Brunner, Joachim Wuerfl and Martin Kuball
  Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
  IEEE Electron Device Letters, 2009, 30(2), 103-106.
 Web of Science® Times Cited: 26

Anelia Kakanakova-Georgieva, Rafal Ciechonski, Urban Forsberg, Anders Lundskog and Erik Janzén
  Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN
  Crystal Growth & Design, 2009, 9(2), 880-884.
 Web of Science® Times Cited: 20

Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
  Journal of Applied Physics, 2008, 104(11), 113513.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Rafal Ciechonski, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen and Erik Janzén
  High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
  Journal of Applied Physics, 2007, , .

Anne Henry, Urban Forsberg, M. K. Linnarsson and Erik Janzén
  Determination of nitrogen doping concentration in doped 4H-SiC epilayers by low temperature photoluminescence
  Physica Scripta, 2005, 72(2-3), 254-257.
 Web of Science® Times Cited: 6

M. S. Janson, M. K. Linnarsson, A. Hallen, B. G. Svensson, N. Achtziger, Lars Unéus, Anita Lloyd-Spets and Urban Forsberg
  Hydrogen in the wide bandgap semiconductor silicon carbide
  Physica Scripta, 2004, T108, 99-112.
 Web of Science® Times Cited: 3

Örjan Danielsson, Urban Forsberg and Erik Janzén
  Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition
  Journal of Crystal Growth, 2003, 250(3-4), 471-478.
 Web of Science® Times Cited: 24

E. Danielsson, C.-M. Zetterling, M. Domeij, M. Ostling, Urban Forsberg and Erik Janzén
  Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors
  Solid-State Electronics, 2003, 47(4), 639-644.
 Web of Science® Times Cited: 5

Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
  Aluminum doping of epitaxial Silicon Carbide
  Journal of Crystal Growth, 2003, 253(1-4), 340-350.
 Web of Science® Times Cited: 46

Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
  Nitrogen doping of epitaxial Silicon Carbide
  Journal of Crystal Growth, 2002, 236(1-3), 101-112.
 Web of Science® Times Cited: 43

Örjan Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
  Investigation of the temperature profile in a hot-wall SiC chemical vapour deposition reactor
  Journal of Crystal Growth, 2002, 235(1-4), 352-364.
 Web of Science® Times Cited: 20

J. Zhang, Urban Forsberg, M. Isacson, A. Ellison, Anne Henry, O. Kordina and Erik Janzén
  Growth characteristics of SiC in a hot-wall CVD reactor with rotation
  Journal of Crystal Growth, 2002, 241(4), 431-438.
 Web of Science® Times Cited: 14

OPA Lindquist, Hans Arwin, Urban Forsberg, JP Bergman and Kenneth Järrendahl
  Optical characterization of 4H-SiC by variable angle of incidence spectroscopic ellipsometry
  Materials Science Forum, 2000, 338-3, 575-578.
 Web of Science® Times Cited: 2

Conference Articles

J Pomeroy, N Rorsman, Jr-Tai Chen, Urban Forsberg, Erik Janzén and M Kuball
  Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization
  35th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS 2013), Monterey, CA, USA, 13-16 October 2013, 2013.


Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  Optical characterization of InGaN quantum dots on GaN pyramids grown by MOCVD
  The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea, 2010.


Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
  AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
  ECS Transactions, Vol. 25, Iss. 8, 2009.


Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
  8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.


Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
  Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
  ICNS-7,2007, 2007.


Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
  Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 16

Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Gholamreza Yazdi, Urban Forsberg and Erik Janzén
  A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 1

Urban Forsberg, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov and Erik Janzén
  Hot-wall MOCVD growth and characterization of III-nitrides for HEMT application
  WOCSDICE 2006,2006, 2006.


Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
  Hot-wall MOCVD developments towards 2 inch AlGaN/GaN epitaxial growth
  ICMOVPE2006,2006, 2006.


M.K. Linnarsson, M.S. Janson, Urban Forsberg and Erik Janzén
  In-diffusion, trapping and out-diffusion of deuterium in 4H-SiC substrates
  Materials Science Forum, Vols. 527-529, 2006.


Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 6

E. Danielsson, C.M. Zetterling, M. Domeij, M. Östling, Urban Forsberg and Erik Janzén
  Switching Peformance for Fabricated and Simulated 4H-SiC High Power Bipolar Transistors
  Solid State Electronics, Vol. 47, 2003.


A Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, Per Persson, Liutauras Storasta, Galia Pozina, Jens Birch, Lars Hultman and Erik Janzén
  Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
  Materials Science Forum, Vols. 433-436, 2003.


 Web of Science® Times Cited: 3

SM Koo, M Domeij, CM Zetterling, M Ostling, Urban Forsberg and Erik Janzén
  Simulation and measurement of switching characteristics of 4H-SiC buried-gate JFETs
  ECSCRM2002, 2003.


Olof Danielsson, Urban Forsberg and Erik Janzén
  Predictions of nitrogen doping in SiC epitaxial layers
  Materials Science Forum, Vols. 433-436, 2003.


Anelia Kakanakova-Georgieva, P.O.A. Persson, Urban Forsberg, Jens Birch, Lars Hultman and Erik Janzén
  Epitaxial growth of AlN layers on SiC substrates in a hot-wall MOCVD system
  Phys. Stat. Sol. (c), Vol. 0, Issue 1, 2002.


Anelia Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositsa Yakimova and Erik Janzén
  Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

E Danielsson, CM Zetterling, M Ostling, Urban Forsberg and Erik Janzén
  Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

SM Koo, Sun Kyun Lee, CM Zetterling, M Ostling, Urban Forsberg and Erik Janzén
  Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

MK Linnarsson, Urban Forsberg, Mona Jensen, Erik Janzén and BG Svensson
  Incorporation of hydrogen (1H and 2H) into 4H-SiC during epitaxial growth
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 6

J Zhang, Urban Forsberg, M Isacson, A Ellison, Anne Henry, Olle Kordina and Erik Janzén
  Growth characteristics of SiC in a hot-wall CVD reactor with rotation
  Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002.


 Web of Science® Times Cited: 4

Anne Henry, A Ellison, Urban Forsberg, Björn Magnusson, Galia Pozina and Erik Janzén
  Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 18

Urban Forsberg, Örjan Danielsson, Anne Henry, MK Linnarsson and Erik Janzén
  Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD, Effect of process parameters
  Proceedings of the International Conference on Silicon Carbide and Related Materials, Tsukuba, 2001, 2002.


 Web of Science® Times Cited: 8

Urban Forsberg, Anne Henry, Örjan Danielsson, M.K. Linnarsson and Erik Janzén
  Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
  Proc. of the MRS Spring Meeting 2001, 680E, 2001.


Ö Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
  Enlarging the usable growth area in a hot-wall silicon carbide CVD reader by using simulation
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 2

Urban Forsberg, Anne Henry, N. Rorsman, J. Eriksson, M. K. Linnarsson, Örjan Danielsson, Liutauras Storasta and Erik Janzén
  Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
  Proc. of the MRS 2000 Fall Meeting, 2001.


Qamar Ul Wahab, A. Ellson, J. Zhang, Urban Forsberg, E. Duranova, Anne Henry, L.D. Madsen and Erik Janzén
  Power Schottky rectifiers and microwave transistors in 4H-SiC
  <em>Proc. of the International Workshop on Semiconductor Devices</em>, 2000.


Qamar Ul Wahab, A Ellison, J Zhang, Urban Forsberg, E Duranova, Anne Henry, LD Madsen and Erik Janzén
  Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6

Urban Forsberg, Anne Henry, MK Linnarsson and Erik Janzén
  Photoluminescence study of CVD layers highly doped with nitrogen
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 4

Mike F. MacMillan, Urban Forsberg, P.O.Å. Persson, Lars Hultman and Erik Janzén
  Infrared Reflectance of Extremely Thin AlN Epi Films Deposited on SiC Substrates
  Materials Science Forum Vols. 264-268, 1998.


Urban Forsberg, Jens Birch, M. F. MacMillan, P. O. Å. Persson and Erik Janzén
  Growth of high quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
  Proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997, 1998.


Ph.D. Theses

Anders Lundskog
  Controlled growth of hexagonal GaN pyramids and InGaN QDs
  2012.


  Fulltext PDF

Urban Forsberg
  CVD Growth of Silicon Carbide for High Frequency Applications
  2001.


  Fulltext PDF

Licentiate Theses

Lina Tengdelius
  Growth and Characterization of ZrB2 Thin Films
  2013.


  Fulltext PDF

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.