Publications for Urban Forsberg
Co-author map based on ISI articles 2007-
Journal Articles
Anders Lundskog, Chih-Wei Hsu, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
Journal of Crystal Growth, 2013, 363, 287-293.
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Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
Applied Physics Letters, 2013, 102(13), 132113.
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T. Hofmann, P. Kuehne, S. Schöche, Jr-Tai Chen, Urban Forsberg, Erik Janzén, N. Ben Sedrine, C. M Herzinger, J. A Woollam, M. Schubert and Vanya Darakchieva
Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
Applied Physics Letters, 2012, 101(19), .
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Hsu-Cheng Hsu, Geng-Ming Hsu, Yu-shiung Lai, Zhe Chuan Feng, Shuo-Yen Tseng, Anders Lundskog, Urban Forsberg, Erik Janzén, Kuei-Hsien Chen and Li-Chyong Chen
Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects
Applied Physics Letters, 2012, 101(12), 121902.
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Anders Lundskog, Justinas Palisaitis, Chih-Wei Hsu, Martin Eriksson, Lars Hultman, Per Persson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
Nanotechnology, 2012, 23(30), 305708.
Web of Science® Times Cited: 2 |
Anders Lundskog, Urban Forsberg, Per-Olof Holtz and Erik Janzén
Morphology control of hot-wall MOCVD selective area -grown hexagonal GaN pyramids
Crystal Growth & Design, 2012, 12(11), 5491-5496.
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Per-Olof Holtz, Chih-Wei Hsu, L A Larsson, K Fredrik Karlsson, Daniel Dufåker, Anders Lundskog, Urban Forsberg, Erik Janzén, Evgenii Moskalenko, V Dimastrodonato, L Mereni and E Pelucchi
Optical characterization of individual quantum dots
Physica. B, Condensed matter, 2012, 407(10), 1472-1475.
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Anelia Kakanakova-Georgieva, Urban Forsberg and Erik Janzén
Carbon-tuned cathodoluminescence of semi-insulating GaN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(9), 2182-2185.
Web of Science® Times Cited: 2 |
Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays
Nano letters (Print), 2011, 11(6), 2415-2418.
Web of Science® Times Cited: 11 |
R J T J T Simms, M J Uren, T Martin, J Powell, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Erik Janzén and M Kuball
Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
SOLID-STATE ELECTRONICS, 2011, 55(1), 5-7.
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Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313.
Web of Science® Times Cited: 3 |
M. Fagerlind, F. Allerstam, E.O. Sveinbjornsson, N. Rorsman, Anelia Kakanakova-Georgieva, Anders Lundskog, Urban Forsberg and Erik Janzén
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
Journal of Applied Physics, 2010, 108(1), 014508.
Fulltext Web of Science® Times Cited: 7 |
Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Rafal Ciechonski and Erik Janzén
Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
Journal of Crystal Growth, 2009, 311(10), 3007-3010.
Fulltext Web of Science® Times Cited: 11 |
Anelia Kakanakova-Georgieva, Rafal Ciechonski, Urban Forsberg, Anders Lundskog and Erik Janzén
Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN
Crystal Growth & Design, 2009, 9(2), 880-884.
Web of Science® Times Cited: 12 |
Gernot J Riedel, James W Pomeroy, Keith P Hilton, Jessica O Maclean, David J Wallis, Michael J Uren, Trevor Martin, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Galia Pozina, Erik Janzén, Richard Lossy, Reza Pazirandeh, Frank Brunner, Joachim Wuerfl and Martin Kuball
Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
IEEE Electron Device Letters, 2009, 30(2), 103-106.
Web of Science® Times Cited: 17 |
Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
Journal of Applied Physics, 2008, 104(11), 113513.
Fulltext Web of Science® Times Cited: 1 |
Rafal Ciechonski, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen and Erik Janzén
High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
Journal of Applied Physics, 2007, , .
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Anne Henry, Urban Forsberg, M. K. Linnarsson and Erik Janzén
Determination of nitrogen doping concentration in doped 4H-SiC epilayers by low temperature photoluminescence
Physica Scripta, 2005, 72(2-3), 254-257.
Web of Science® Times Cited: 6 |
M. S. Janson, M. K. Linnarsson, A. Hallen, B. G. Svensson, N. Achtziger, Lars Unéus, Anita Lloyd-Spets and Urban Forsberg
Hydrogen in the wide bandgap semiconductor silicon carbide
Physica Scripta, 2004, T108, 99-112.
Web of Science® Times Cited: 1 |
Örjan Danielsson, Urban Forsberg and Erik Janzén
Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition
Journal of Crystal Growth, 2003, 250(3-4), 471-478.
Web of Science® Times Cited: 22 |
E. Danielsson, C.-M. Zetterling, M. Domeij, M. Ostling, Urban Forsberg and Erik Janzén
Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors
Solid-State Electronics, 2003, 47(4), 639-644.
Web of Science® Times Cited: 5 |
Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
Aluminum doping of epitaxial Silicon Carbide
Journal of Crystal Growth, 2003, 253(1-4), 340-350.
Web of Science® Times Cited: 40 |
Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
Nitrogen doping of epitaxial Silicon Carbide
Journal of Crystal Growth, 2002, 236(1-3), 101-112.
Web of Science® Times Cited: 39 |
Örjan Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
Investigation of the temperature profile in a hot-wall SiC chemical vapour deposition reactor
Journal of Crystal Growth, 2002, 235(1-4), 352-364.
Web of Science® Times Cited: 19 |
J. Zhang, Urban Forsberg, M. Isacson, A. Ellison, Anne Henry, O. Kordina and Erik Janzén
Growth characteristics of SiC in a hot-wall CVD reactor with rotation
Journal of Crystal Growth, 2002, 241(4), 431-438.
Web of Science® Times Cited: 14 |
OPA Lindquist, Hans Arwin, Urban Forsberg, JP Bergman and Kenneth Järrendahl
Optical characterization of 4H-SiC by variable angle of incidence spectroscopic ellipsometry
Materials Science Forum, 2000, 338-3, 575-578.
Web of Science® Times Cited: 2 |
Conference Articles
Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
Optical characterization of InGaN quantum dots on GaN pyramids grown by MOCVD
The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea, 2010.
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Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
ECS Transactions, Vol. 25, Iss. 8, 2009.
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Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.
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Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
ICNS-7,2007, 2007.
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Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
Journal of Crystal Growth, Vol. 300, 2007.
Web of Science® Times Cited: 14
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Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Gholamreza Yazdi, Urban Forsberg and Erik Janzén
A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD
Journal of Crystal Growth, Vol. 300, 2007.
Web of Science® Times Cited: 1
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Urban Forsberg, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov and Erik Janzén
Hot-wall MOCVD growth and characterization of III-nitrides for HEMT application
WOCSDICE 2006,2006, 2006.
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Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
Hot-wall MOCVD developments towards 2 inch AlGaN/GaN epitaxial growth
ICMOVPE2006,2006, 2006.
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M.K. Linnarsson, M.S. Janson, Urban Forsberg and Erik Janzén
In-diffusion, trapping and out-diffusion of deuterium in 4H-SiC substrates
Materials Science Forum, Vols. 527-529, 2006.
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Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
SiC and III-nitride Growth in a Hot-wall CVD Reactor
Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.
Web of Science® Times Cited: 5
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E. Danielsson, C.M. Zetterling, M. Domeij, M. Östling, Urban Forsberg and Erik Janzén
Switching Peformance for Fabricated and Simulated 4H-SiC High Power Bipolar Transistors
Solid State Electronics, Vol. 47, 2003.
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A Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, Per Persson, Liutauras Storasta, Galia Pozina, Jens Birch, Lars Hultman and Erik Janzén
Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
Materials Science Forum, Vols. 433-436, 2003.
Web of Science® Times Cited: 3
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SM Koo, M Domeij, CM Zetterling, M Ostling, Urban Forsberg and Erik Janzén
Simulation and measurement of switching characteristics of 4H-SiC buried-gate JFETs
ECSCRM2002, 2003.
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Olof Danielsson, Urban Forsberg and Erik Janzén
Predictions of nitrogen doping in SiC epitaxial layers
Materials Science Forum, Vols. 433-436, 2003.
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Anelia Kakanakova-Georgieva, P.O.A. Persson, Urban Forsberg, Jens Birch, Lars Hultman and Erik Janzén
Epitaxial growth of AlN layers on SiC substrates in a hot-wall MOCVD system
Phys. Stat. Sol. (c), Vol. 0, Issue 1, 2002.
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Anelia Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositsa Yakimova and Erik Janzén
Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 1
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E Danielsson, CM Zetterling, M Ostling, Urban Forsberg and Erik Janzén
Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 5
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SM Koo, Sun Kyun Lee, CM Zetterling, M Ostling, Urban Forsberg and Erik Janzén
Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 5
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Anne Henry, A Ellison, Urban Forsberg, Björn Magnusson, Galia Pozina and Erik Janzén
Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 18
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MK Linnarsson, Urban Forsberg, Mona Jensen, Erik Janzén and BG Svensson
Incorporation of hydrogen (1H and 2H) into 4H-SiC during epitaxial growth
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 6
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Urban Forsberg, O Danielsson, Anne Henry, MK Linnarsson and Erik Janzén
Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD, Effect of process parameters
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 8
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J Zhang, Urban Forsberg, M Isacson, A Ellison, Anne Henry, Olle Kordina and Erik Janzén
Growth characteristics of SiC in a hot-wall CVD reactor with rotation
Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002.
Web of Science® Times Cited: 4
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Urban Forsberg, Anne Henry, N. Rorsman, J. Eriksson, M. K. Linnarsson, Örjan Danielsson, Liutauras Storasta and Erik Janzén
Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
Proc. of the MRS 2000 Fall Meeting, 2001.
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Urban Forsberg, Anne Henry, Örjan Danielsson, M.K. Linnarsson and Erik Janzén
Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
Proc. of the MRS Spring Meeting 2001, 680E, 2001.
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Ö Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
Enlarging the usable growth area in a hot-wall silicon carbide CVD reader by using simulation
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 2
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Qamar Ul Wahab, A. Ellson, J. Zhang, Urban Forsberg, E. Duranova, Anne Henry, L.D. Madsen and Erik Janzén
Power Schottky rectifiers and microwave transistors in 4H-SiC
<em>Proc. of the International Workshop on Semiconductor Devices</em>, 2000.
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Qamar Ul Wahab, A Ellison, J Zhang, Urban Forsberg, E Duranova, Anne Henry, LD Madsen and Erik Janzén
Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 6
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Urban Forsberg, Anne Henry, MK Linnarsson and Erik Janzén
Photoluminescence study of CVD layers highly doped with nitrogen
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 4
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Mike F. MacMillan, Urban Forsberg, P.O.Å. Persson, Lars Hultman and Erik Janzén
Infrared Reflectance of Extremely Thin AlN Epi Films Deposited on SiC Substrates
Materials Science Forum Vols. 264-268, 1998.
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Urban Forsberg, Jens Birch, M. F. MacMillan, P. O. Å. Persson and Erik Janzén
Growth of high quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
Proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997, 1998.
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Ph.D. Theses
Ph.D., Lic. Theses
