Publications for Ulf Lindefelt

Publications for Ulf LindefeltCo-author map based on ISI articles 2007-

Keywords

stacking sic model localized inclusions gap faults fault energy energies electronic cubic conduction calculated around 6h-sic 4h-sic 4h- 3c-sic 3c-

Journal Articles

H. Jacobson, Jens Birch, Christer Hallin, Anne Henry, Rositsa Yakimova, T. Tuomi, Erik Janzén and Ulf Lindefelt
  Doping-induced strain in N-doped 4H-SiC crystals
  Applied Physics Letters, 2003, 82(21), 3689-3691.
 Web of Science® Times Cited: 20

Ulf Lindefelt, H Iwata, S Oberg and PR Briddon
  Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(15), .
 Web of Science® Times Cited: 81

HP Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Energies and electronic properties of isolated and interacting twin boundaries in 3C-SiC, Si, and diamond
  Physical Review B. Condensed Matter and Materials Physics, 2003, 68(11), .
 Web of Science® Times Cited: 9

H. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
  Cubic polytype inclusions in 4H-SiC
  Journal of Applied Physics, 2003, 93(3), 1577-1585.
 Web of Science® Times Cited: 55

H.P. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
  Ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC
  Journal of Applied Physics, 2003, 94(8), 4972-4979.
 Web of Science® Times Cited: 16

HP Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Stacking faults in silicon carbide
  Physica. B, Condensed matter, 2003, 340, 165-170.
 Web of Science® Times Cited: 29

HP Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Effective masses of two-dimensional electron gases around cubic inclusions in hexagonal silicon carbide
  Physical Review B. Condensed Matter and Materials Physics, 2003, 68(24), .
 Web of Science® Times Cited: 15

H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Theoretical study of cubic polytype inclusions in 4H-SiC
  Materials Science Forum, 2002, 389-3, 533-536.
 Web of Science® Times Cited: 15

H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Electronic localization around stacking faults in silicon carbide
  Materials Science Forum, 2002, 389-3, 529-532.
 Web of Science® Times Cited: 19

H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Theoretical calculation of stacking fault energies in silicon carbide
  Materials Science Forum, 2002, 389-3, 439-442.
 Web of Science® Times Cited: 30

Ulf Lindefelt, H Iwata, S Oberg and PR Briddon
  Insight into the degradation phenomenon in SiC devices from ab initio calculations of the electronic structure of single and multiple stacking faults
  Materials Science Forum, 2002, 433-4, 907-912.
 Web of Science® Times Cited: 1

H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Electronic properties of stacking faults in 15R-SiC
  Materials Science Forum, 2002, 433-4, 531-534.
 Web of Science® Times Cited: 1

H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Electronic structure of twin boundaries in 3C-SiC, Si and diamond
  Materials Science Forum, 2002, 433-4, 527-530.
 Web of Science® Times Cited: 1

H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Effective mass of electrons in quantum-well-like stacking-fault gap states in silicon carbide
  Materials Science Forum, 2002, 433-4, 519-522.
 Web of Science® Times Cited: 2

H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Localized electronic states around stacking faults in silicon carbide
  Physical Review B. Condensed Matter and Materials Physics, 2002, 65(3), .
 Web of Science® Times Cited: 44

H. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
  Theoretical study of planar defects in silicon carbide
  Journal of Physics: Condensed Matter, 2002, 14(48), 12733-12740.
 Web of Science® Times Cited: 37

Ulf Lindefelt and C Persson
  Theoretical treatments of band edges in SiC polytypes at high carrier concentrations
  Materials Science Forum, 2000, 338-3, 719-724.

C. Persson, Ulf Lindefelt and Bo Sernelius
  Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si
  Solid-State Electronics, 2000, 44(3), 471-476.
 Web of Science® Times Cited: 13

C Persson, Ulf Lindefelt and Bo Sernelius
  Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si
  Physical Review B. Condensed Matter and Materials Physics, 1999, 60(24), 16479-16493.

Chapters in Books

Son Tien Nguyen, C. Persson, Ulf Lindefelt, Weimin Chen, Erik Janzén, B. K. Meyer and D. M. Hofmann
  Cyclotron resonance studies of effective masses and band structure in SiC
  Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, -899.


Conference Articles

H Jacobson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositsa Yakimova and Erik Janzén
  Doping-related strain in n-doped 4H-SiC crystals
  Materials Science Forum, Vols. 433-436, 2003.


H. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
  A new type of quantum wells: Stacking faults in silicon carbide
  Microelectronics Journal, 2003.


 Web of Science® Times Cited: 11

H.P. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
  Stacking faults in silicon carbide
  Physica. B, Condensed matter, 2003.


 Web of Science® Times Cited: 29

H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
  Stacking fault - Stacking fault interactions and cubic inclusions in 6H-SiC: an ab initio study
  Materials Science Forum, Vols. 433-436, 2002.


 Web of Science® Times Cited: 2