Publications for Ulf Lindefelt
Co-author map based on ISI articles 2007-
Journal Articles
H. Jacobson, Jens Birch, Christer Hallin, Anne Henry, Rositsa Yakimova, T. Tuomi, Erik Janzén and Ulf Lindefelt
Doping-induced strain in N-doped 4H-SiC crystals
Applied Physics Letters, 2003, 82(21), 3689-3691.
Web of Science® Times Cited: 18 |
Ulf Lindefelt, H Iwata, S Oberg and PR Briddon
Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method
Physical Review B. Condensed Matter and Materials Physics, 2003, 67(15), .
Web of Science® Times Cited: 69 |
HP Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Energies and electronic properties of isolated and interacting twin boundaries in 3C-SiC, Si, and diamond
Physical Review B. Condensed Matter and Materials Physics, 2003, 68(11), .
Web of Science® Times Cited: 8 |
H. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
Cubic polytype inclusions in 4H-SiC
Journal of Applied Physics, 2003, 93(3), 1577-1585.
Web of Science® Times Cited: 53 |
H.P. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
Ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC
Journal of Applied Physics, 2003, 94(8), 4972-4979.
Web of Science® Times Cited: 13 |
HP Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Stacking faults in silicon carbide
Physica. B, Condensed matter, 2003, 340, 165-170.
Web of Science® Times Cited: 21 |
HP Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Effective masses of two-dimensional electron gases around cubic inclusions in hexagonal silicon carbide
Physical Review B. Condensed Matter and Materials Physics, 2003, 68(24), .
Web of Science® Times Cited: 14 |
H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Theoretical study of cubic polytype inclusions in 4H-SiC
Materials Science Forum, 2002, 389-3, 533-536.
Web of Science® Times Cited: 15 |
H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Electronic localization around stacking faults in silicon carbide
Materials Science Forum, 2002, 389-3, 529-532.
Web of Science® Times Cited: 18 |
H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Theoretical calculation of stacking fault energies in silicon carbide
Materials Science Forum, 2002, 389-3, 439-442.
Web of Science® Times Cited: 29 |
Ulf Lindefelt, H Iwata, S Oberg and PR Briddon
Insight into the degradation phenomenon in SiC devices from ab initio calculations of the electronic structure of single and multiple stacking faults
Materials Science Forum, 2002, 433-4, 907-912.
Web of Science® Times Cited: 1 |
H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Electronic properties of stacking faults in 15R-SiC
Materials Science Forum, 2002, 433-4, 531-534.
Web of Science® Times Cited: 1 |
H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Electronic structure of twin boundaries in 3C-SiC, Si and diamond
Materials Science Forum, 2002, 433-4, 527-530.
Web of Science® Times Cited: 1 |
H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Effective mass of electrons in quantum-well-like stacking-fault gap states in silicon carbide
Materials Science Forum, 2002, 433-4, 519-522.
Web of Science® Times Cited: 2 |
H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Localized electronic states around stacking faults in silicon carbide
Physical Review B. Condensed Matter and Materials Physics, 2002, 65(3), .
Web of Science® Times Cited: 44 |
H. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
Theoretical study of planar defects in silicon carbide
Journal of Physics, 2002, 14(48), 12733-12740.
Web of Science® Times Cited: 34 |
Ulf Lindefelt and C Persson
Theoretical treatments of band edges in SiC polytypes at high carrier concentrations
Materials Science Forum, 2000, 338-3, 719-724.
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C. Persson, Ulf Lindefelt and Bo Sernelius
Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si
Solid-State Electronics, 2000, 44(3), 471-476.
Web of Science® Times Cited: 12 |
C Persson, Ulf Lindefelt and Bo Sernelius
Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si
Physical Review B. Condensed Matter and Materials Physics, 1999, 60(24), 16479-16493.
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Chapters in Books
Conference Articles
H Jacobson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositsa Yakimova and Erik Janzén
Doping-related strain in n-doped 4H-SiC crystals
Materials Science Forum, Vols. 433-436, 2003.
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H. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
A new type of quantum wells: Stacking faults in silicon carbide
Microelectronics Journal, 2003.
Web of Science® Times Cited: 9
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H.P. Iwata, Ulf Lindefelt, S. Oberg and P.R. Briddon
Stacking faults in silicon carbide
Physica. B, Condensed matter, 2003.
Web of Science® Times Cited: 21
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H Iwata, Ulf Lindefelt, S Oberg and PR Briddon
Stacking fault - Stacking fault interactions and cubic inclusions in 6H-SiC: an ab initio study
Materials Science Forum, Vols. 433-436, 2002.
Web of Science® Times Cited: 2
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Ph.D., Lic. Theses
