Publications for Tihomir Iakimov
Co-author map based on ISI articles 2007-

Publications mentioned in social media 2 times*

Keywords

thickness temperature substrates sublimation step silicon sic morphology microscopy graphene grains gas epitaxial energy electronic defect c-face adjacent 4h-sic 3c-sic

Journal Articles

Rositsa Yakimova, Tihomir Iakimov, Gholamreza Yazdi, Chamseddine Bouhafs, J. Eriksson, A. Zakharov, A. Boosalis, M. Schubert and Vanya Darakchieva
  Morphological and electronic properties of epitaxial graphene on SiC
  Physica. B, Condensed matter, 2014, 439, 54-59.
   Fulltext  PDF  

Vanya Darakchieva, A. Boosalis, A. A. Zakharov, T. Hofmann, M. Schubert, T. E. Tiwald, Tihomir Iakimov, Remigijus Vasiliauskas and Rositsa Yakimova
  Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
  Applied Physics Letters, 2013, 102(21), 213116.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Gholamreza Yazdi, Remigijus Vasiliauskas, Tihomir Iakimov, Alexei Zakharov, Mikael Syväjärvi and Rositsa Yakimova
  Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
  Carbon, 2013, 57, 477-484.
 Web of Science® Times Cited: 3

Ruth Pearce, Jens Eriksson, Tihomir Iakimov, Lars Hultman, Anita Lloyd Spetz and Rositza Yakimova
  On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy
 
Altmetric usage: 1

  ACS Nano, 2013, 7(5), 4647-4656.
 Web of Science® Times Cited: 2

Leif Johansson, Chao Xia, Jawad ul Hassan, Tihomir Iakimov, Alexei A. Zarharov, Somsakul Watcharinyanon, Rositza Yakimova, Erik Janzén and Chariya Virojanadara
  Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
  Crystals, 2013, 3(1), 1-13.
   Fulltext  PDF  

Jens Eriksson, Ruth Pearce, Tihomir Iakimov, Chariya Virojanadara, Daniela Gogova, Mike Andersson, Mikael Syväjärvi, Anita Lloyd Spetz and Rositza Yakimova
  The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
 
Altmetric usage: 1

  Applied Physics Letters, 2012, 100(24), 241607.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Leif I Johansson, Somsakul Watcharinyanon, A A Zakharov, Tihomir Iakimov, Rositsa Yakimova and Chariya Virojanadara
  Stacking of adjacent graphene layers grown on C-face SiC
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(12), 125405.
   Fulltext  PDF  
 Web of Science® Times Cited: 20

Ruth Pearce, Tihomir Iakimov, Mike Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova
  Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection
  Sensors and actuators. B, Chemical, 2011, 155(2), 451-455.
   Fulltext  PDF  
 Web of Science® Times Cited: 43

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, R Raback, A Vehanen and Erik Janzén
  Polytype stability in seeded sublimation growth of 4H-SiC boules
  Journal of Crystal Growth, 2000, 217(3), 255-262.
 Web of Science® Times Cited: 36

Conference Articles

Leif I Johansson, Somsakul Watcharinyanon, A.A. Zakharov, Tihomir Iakimov, Rositsa Yakimova and Chariya Virojanadara
  Detailed studies of graphene grown on C-face SiC
  Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, 2012.


Ruth Pearce, Tihomir Iakimov, M Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova
  Towards Optimisation of Epitaxially Grown Graphene Based Sensors for Highly Sensitive Gas Detection
  2010 IEEE Sensors, 2010.


 Web of Science® Times Cited: 1

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, AO Okunev, VE Udal'tsov and Erik Janzén
  Orientation-dependent defect formation in silicon carbide epitaxial layers
  Materials Science Forum, Vols. 433-436, 2003.


Rositsa Yakimova, H Jacobson, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Tihomir Iakimov, Chariya Virojanadara, Leif Johansson and Erik Janzén
  Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

Rositsa Yakimova, Tihomir Iakimov, Anelia Kakanakova-Gueorguie, Mikael Syväjärvi, Henrik Jacobson, Chariya Virojanadara, Leif Johansson and Erik Janzén
  Effect of High Temperature Annealing on Surface and Bulk Characteristics of 4H-SiC
  <em>Proc. of the 43rd Electronic Material Conference</em>, 2001.


A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
  HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, Anelia Kakanakova-Georgieva, P. Raback and Erik Janzén
  Growth of silicon carbide: Process-related defects
  Appl. Surf. Sci., Vol. 184, 2001.


 Web of Science® Times Cited: 11

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson and Erik Janzén
  Crystal perfection aspects of silicon carbide growth
  <em>Proc. III Intern. Seminar on SiC and Related Materials</em>, 2000.


Mikael Syväjärvi, Rositsa Yakimova, Tihomir Iakimov and Erik Janzén
  Characterization of anisotropic step-bunching on as-grown SiC surfaces
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 3

P Raback, Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, R Nieminen and Erik Janzén
  Considerations on the crystal morphology in the sublimation growth of SiC
  Materials Science Forum, Vols. 338-343, 2000.


* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.