Publications for Tihomir Iakimov
Co-author map based on ISI articles 2007-
Publications mentioned in social media 2 times*
Journal Articles
Leif Johansson, Chao Xia, Jawad ul Hassan, Tihomir Iakimov, Alexei A. Zarharov, Somsakul Watcharinyanon, Rositza Yakimova, Erik Janzén and Chariya Virojanadara
Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
Crystals, 2013, 3(1), 1-13.
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Ruth Pearce, Jens Eriksson, Tihomir Iakimov, Lars Hultman, Anita Lloyd Spetz and Rositza Yakimova
On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy
ACS Nano, 2013, , .
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Jens Eriksson, Ruth Pearce, Tihomir Iakimov, Chariya Virojanadara, Daniela Gogova, Mike Andersson, Mikael Syväjärvi, Anita Lloyd Spetz and Rositza Yakimova
The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
Applied Physics Letters, 2012, 100(24), 241607.
Fulltext  Web of Science® Times Cited: 1 |
Leif I Johansson, Somsakul Watcharinyanon, A A Zakharov, Tihomir Iakimov, Rositsa Yakimova and Chariya Virojanadara
Stacking of adjacent graphene layers grown on C-face SiC
Physical Review B. Condensed Matter and Materials Physics, 2011, 84(12), 125405.
Fulltext Web of Science® Times Cited: 9 |
Ruth Pearce, Tihomir Iakimov, Mike Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova
Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection
Sensors and actuators. B, Chemical, 2011, 155(2), 451-455.
Fulltext Web of Science® Times Cited: 15 |
Ruth Pearce, Tihomir Iakimov, M Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova
Towards Optimisation of Epitaxially Grown Graphene Based Sensors for Highly Sensitive Gas Detection
2010 IEEE SENSORS, 2010, , 898-902.
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Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, R Raback, A Vehanen and Erik Janzén
Polytype stability in seeded sublimation growth of 4H-SiC boules
Journal of Crystal Growth, 2000, 217(3), 255-262.
Web of Science® Times Cited: 29 |
Conference Articles
Ruth Pearce, Tihomir Iakimov, Mike Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova
Towards optimization of epitaxially grown graphene based sensors for highly sensitive gas detection
IEEE Sensors 2010, 2010.
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Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, AO Okunev, VE Udal'tsov and Erik Janzén
Orientation-dependent defect formation in silicon carbide epitaxial layers
Materials Science Forum, Vols. 433-436, 2003.
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Rositsa Yakimova, H Jacobson, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Tihomir Iakimov, Chariya Virojanadara, Leif Johansson and Erik Janzén
Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 5
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Rositsa Yakimova, Tihomir Iakimov, Anelia Kakanakova-Gueorguie, Mikael Syväjärvi, Henrik Jacobson, Chariya Virojanadara, Leif Johansson and Erik Janzén
Effect of High Temperature Annealing on Surface and Bulk Characteristics of 4H-SiC
<em>Proc. of the 43rd Electronic Material Conference</em>, 2001.
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A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.
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Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, Anelia Kakanakova-Georgieva, P. Raback and Erik Janzén
Growth of silicon carbide: Process-related defects
Appl. Surf. Sci., Vol. 184, 2001.
Web of Science® Times Cited: 9
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Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson and Erik Janzén
Crystal perfection aspects of silicon carbide growth
<em>Proc. III Intern. Seminar on SiC and Related Materials</em>, 2000.
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Mikael Syväjärvi, Rositsa Yakimova, Tihomir Iakimov and Erik Janzén
Characterization of anisotropic step-bunching on as-grown SiC surfaces
Materials Science Forum, Vols. 338-343, 2000.
Web of Science® Times Cited: 3
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P Raback, Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, R Nieminen and Erik Janzén
Considerations on the crystal morphology in the sublimation growth of SiC
Materials Science Forum, Vols. 338-343, 2000.
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* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.
Ph.D., Lic. Theses
