Publications for Tanja Paskova
Co-author map based on ISI articles 2007-

Keywords

x-ray vapor thick substrates strain spectra sapphire quality photoluminescence optical hydride gan exciton epitaxy epitaxial emission defects defect buffer aln

Journal Articles

Tanya Paskova, Drew A. Hanser and Keith R. Evans
  GaN Substrates for III-Nitride Devices
  Proceedings of the IEEE, 2010, 98(7), 1324-1338.
   Fulltext  PDF  
 Web of Science® Times Cited: 31

Tanja Paskova, E. A. Preble, A. D. Hanser, K. R. Evans, R. Kröger, Plamen Paskov, A. J. Cheng, M. Park, J. A. Grenko and M. A. L. Johnson
  Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
  Physica Status Solidi. C, Current topics in solid state physics, 2009, 6(2), 344-347.
 Web of Science® Times Cited: 4

Tanja Paskova, L. Becker, T. Böttcher, D. Hommel, Plamen Paskov and Bo Monemar
  Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy
  Journal of Applied Physics, 2007, 102(12), .
 Web of Science® Times Cited: 3

Vanya Darakchieva, Tanja Paskova, M. Schubert, Hans Arwin, Plamen Paskov, Bo Monemar, D. Hommel, J. Off, F. Scholz, M. Heuken, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
  Anisotropic strain and phonon deformation potentials in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2007, 75(19), 195217.
 Web of Science® Times Cited: 47

C. Roder, S. Einfeldt, S. Figge, D. Hommel, Tanja Paskova, Bo Monemar, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
  Strain in a-plane GaN layers grown on r-plane sapphire substrates
  Physica Status Solidi (A) Applications and Materials, 2006, 203(7), 1672-1675.
 Web of Science® Times Cited: 3

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, Carl Hemmingsson, T Malinauskas, K Jarasiunas, P Gibart and B Beaumont
  Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
  Physica. B, Condensed matter, 2006, 376, 482-485.
 Web of Science® Times Cited: 5

Plamen Paskov, R Schifano, Tanja Paskova, T Malinauskas, Peder Bergman, Bo Monemar, S Figge and D Hommel
  Structural defect-related emissions in nonpolar a-plane GaN
  Physica. B, Condensed matter, 2006, 376, 473-476.
 Web of Science® Times Cited: 26

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, S Figge, J Dennemarck and D Hommel
  The dominant shallow 0.225 eV acceptor in GaN
  Physica status solidi. B, Basic research, 2006, 243(7), 1604-1608.
 Web of Science® Times Cited: 15

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Hans Arwin, M Schubert, Bo Monemar, S Figge, D Hommel, BA Haskell, PT Fini and S Nakamura
  Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
  Physica status solidi. B, Basic research, 2006, 243(7), 1594-1598.
 Web of Science® Times Cited: 2

F Tuomisto, S Hautakangas, I Makkonen, V Ranki, MJ Puska, K Saarinen, M Bockowski, T Suski, Tanja Paskova, Bo Monemar, X Xu and DC Look
  Dissociation of V-Ga-O-N complexes in HVPE GaN by high pressure and high temperature annealing
  Physica status solidi. B, Basic research, 2006, 243(7), 1436-1440.
 Web of Science® Times Cited: 4

Plamen Paskov, Tanja Paskova, Bo Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
  Optical properties of nonpolar a-plane GaN layers
  Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 253-261.
 Web of Science® Times Cited: 19

Tanja Paskova, B. Arnaudov, Plamen Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and Bo Monemar
  Donor-acceptor pair emission enhancement in mass-transport-grown GaN
  Journal of Applied Physics, 2005, 98(3), 033508.
 Web of Science® Times Cited: 11

V.N. Strocov, T. Schmitt, J.-E. Rubensson, P. Blaha, Tanja Paskova and P.O. Nilsson
  Momentum selectivity and anisotropy effects in the nitrogen K -edge resonant inelastic x-ray scattering from GaN
  Physical Review B. Condensed Matter and Materials Physics, 2005, 72(8), .
 Web of Science® Times Cited: 15

S Figge, T Bottcher, J Dennemarck, R Kroger, Tanja Paskova, Bo Monemar and D Hommel
  Optoelectronic devices on bulk GaN
  Journal of Crystal Growth, 2005, 281(1), 101-106.
 Web of Science® Times Cited: 6

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E Valcheva, Per Persson, B Arnaudov, S Tungasmitta and Bo Monemar
  Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
  Journal of Crystal Growth, 2005, 281(1), 55-61.
 Web of Science® Times Cited: 48

Bo Monemar, Tanja Paskova, Carl Hemmingsson, Henrik Larsson, Plamen Paskov, Ivan Gueorguiev Ivanov and Aleksander Kasic
  Growth of thick GaN layers by hydride vapor phase epitaxy
  Journal of Ceramic Processing Research, 2005, 6(2), 153-162.

Plamen Paskov, Peder Bergman, Vanya Darakchieva, Tanja Paskova, Bo Monemar, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Photoluminescence of GaN/AlN superlattices grown by MOCVD
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2345-2348.

B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, Bo Monemar, H. Lu and W.J. Schaff
  On the nature of the near bandedge luminescence of InN epitaxial layers
  AIP Conference Proceedings, 2005, 772, 285-286.

Tanja Paskova, B. Arnaudov, Plamen Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and Bo Monemar
  Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN
  AIP Conference Proceedings, 2005, 772, 261-262.

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E. Valcheva, Per Persson, B. Arnaudov, S. Tungasmita and Bo Monemar
  Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2027-2031.

Vanya Darakchieva, E. Valcheva, Plamen Paskov, M. Schubert, Tanja Paskova, Bo Monemar, H. Amano and I. Akasaki
  Phonon mode behavior in strained wurtzite AlN/GaN superlattices
  Physical Review B. Condensed Matter and Materials Physics, 2005, 71(11), 115329.
 Web of Science® Times Cited: 17

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
  Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
  Journal of Applied Physics, 2005, 97(1), 013517.
 Web of Science® Times Cited: 24

Tanja Paskova, Vanya Darakchieva, E Valcheva, Plamen Paskov, Ivan Gueorguiev Ivanov, Bo Monemar, T Bottcher, C Roder and D Hommel
  Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
  Journal of Electronic Materials, 2004, 33(5), 389-394.
 Web of Science® Times Cited: 15

B Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E Valcheva, Bo Monemar, H Lu, WJ Schaff, H Amano and I Akasaki
  Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
  Physical Review B. Condensed Matter and Materials Physics, 2004, 69(11), .
 Web of Science® Times Cited: 140

O Gelhausen, MR Phillips, EM Goldys, Tanja Paskova, Bo Monemar, M Strassburg and A Hoffmann
  Dissociation of H-related defect complexes in Mg-doped GaN
  Physical Review B. Condensed Matter and Materials Physics, 2004, 69(12), .
 Web of Science® Times Cited: 32

Tanja Paskova, Plamen Paskov, E Valcheva, Vanya Darakchieva, Jens Birch, A Kasic, B Arnaudov, Sukkaneste Tungasmita and Bo Monemar
  Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
  Physica status solidi. A, Applied research, 2004, 201(10), 2265-2270.
 Web of Science® Times Cited: 12

Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical investigation of AlGaN/GaN quantum wells and superlattices
  Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.

R Leon, J Nadeau, K Evans, Tanja Paskova and Bo Monemar
  Electron irradiation effects on nanocrystal quantum dots used in bio-sensing applications
  IEEE Transactions on Nuclear Science, 2004, 51(6), 3186-3192.
 Web of Science® Times Cited: 2

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarized photoluminescence of exciton-polaritons in free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(4), 678-685.
 Web of Science® Times Cited: 9

Tanja Paskova, E. Valcheva, Plamen Paskov, Bo Monemar, A.M. Roskowski, R.F. Davis, B. Beaumont and P. Gibart
  HVPE-GaN: Comparison of emission properties and microstructure of films grown on different laterally overgrown templates
  Diamond and related materials, 2004, 13(4-8), 1125-1129.
 Web of Science® Times Cited: 6

B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E. Valcheva, Bo Monemar, H. Lu, W.J. Schaff, H. Amano and I. Akasaki
  Free-to-bound radiative recombination in highly conducting InN epitaxial layers
  Superlattices and Microstructures, 2004, 36(4-6), 563-571.
 Web of Science® Times Cited: 6

Vanya Darakchieva, Plamen Paskov, E. Valcheva, Tanja Paskova, M. Schubert, C. Bundesmann, H. Lu, W.J. Schaff and Bo Monemar
  Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties
  Superlattices and Microstructures, 2004, 36(4-6), 573-580.
 Web of Science® Times Cited: 12

Vanya Darakchieva, Jens Birch, M Schubert, Tanja Paskova, S Tungasmita, G Wagner, A Kasic and Bo Monemar
  Strain-related structural and vibrational properties of thin epitaxial AIN layers
  Physical Review B. Condensed Matter and Materials Physics, 2004, 70(4), 045411.
 Web of Science® Times Cited: 32

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarized photoluminescence study of free and bound excitons in free-standing GaN
  , 2004, , .
 Web of Science® Times Cited: 24

V.N. Strocov, T Schmitt, J. -E Rubensson, P Blaha, Tanja Paskova and P.O. Nilsson
  Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN
  Physica status solidi. B, Basic research, 2004, 241(7), .
 Web of Science® Times Cited: 6

Tanja Paskova, Plamen Paskov, E. M. Goldys, Vanya Darakchieva, U Södervall, M Godlewski, M Zielinski, E Valcheva, C Carlström, Qamar Ul Wahab and Bo Monemar
  Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
  Journal of Crystal Growth, 2004, 273( 1-2), 118-128.
 Web of Science® Times Cited: 5

Vanya Darakchieva, Plamen Paskov, E Valcheva, Tanja Paskova, Bo Monemar, M Schubert, H Lu and W.J. Schaff
  Deformation potentials of the E1 (TO) and E2 modes of InN
  Applied Physics Letters, 2004, 84(18), 3636-3638.
 Web of Science® Times Cited: 29

S Evtimova, B Arnaudov, Tanja Paskova, Bo Monemar and M Heuken
  Effect of carrier concentration on the microhardness of GaN layers
  Journal of materials science. Materials in electronics, 2003, 14(10-12), 771-772.
 Web of Science® Times Cited: 1

B Arnaudov, Tanja Paskova, S Evtimova, E Valcheva, M Heuken and Bo Monemar
  Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(4), .
 Web of Science® Times Cited: 17

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
  Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
  Physica status solidi. A, Applied research, 2003, 195(3), 516-522.
 Web of Science® Times Cited: 13

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, E. Valcheva, Bo Monemar and M. Heuken
  Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
  Applied Physics Letters, 2003, 82(5), 703-705.
 Web of Science® Times Cited: 24

M.G. Tkachman, T.V. Shubina, V.N. Jmerik, S.V. Ivanov, P.S. Kop'ev, Tanja Paskova and Bo Monemar
  Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE
  Semiconductors (Woodbury, N.Y.), 2003, 37(5), 532-536.
 Web of Science® Times Cited: 4

E. Valcheva, Tanja Paskova and Bo Monemar
  Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers
  Journal of Crystal Growth, 2003, 255(1-2), 19-26.
 Web of Science® Times Cited: 10

Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
  In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
  Journal of Crystal Growth, 2003, 257(1-2), 1-6.
 Web of Science® Times Cited: 4

B. Arnaudov, Tanja Paskova, O. Valassiades, Plamen Paskov, S. Evtimova, Bo Monemar and M. Heuken
  Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells
  Applied Physics Letters, 2003, 83(13), 2590-2592.
 Web of Science® Times Cited: 1

V. Darakchieva, Plamen Paskov, Mattias Schubert, Tanja Paskova, Hans Arwin, Bo Monemar, H. Amano and I. Akasaki
  Strain evolution and phonons in AlN/GaN superlattices
  , 2003, , .

Tanja Paskova, E Valcheva and Bo Monemar
  Thick GaN films grown on sapphire: Detects in highly mismatched systems
  DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 2002, 200-2, .
 Web of Science® Times Cited: 5

Tatiana Shubina, AA Toropov, SV Ivanov, JP Bergman, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Peculiarities of exciton-polaritons in GaN at different polarizations studied by mu-photoluminescence spectroscopy
  Physica status solidi. A, Applied research, 2002, 190(1), 205-211.

Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Tanja Paskova, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells
  Physica status solidi. A, Applied research, 2002, 190(1), 161-166.
 Web of Science® Times Cited: 2

E Valcheva, Tanja Paskova, Per Persson and Bo Monemar
  Nanopipes in thick GaN films grown at high growth rate
  Physica status solidi. A, Applied research, 2002, 194(2), 532-535.
 Web of Science® Times Cited: 3

B Arnaudov, Tanja Paskova, S Evtimova, M Heuken and Bo Monemar
  Hall effect data analysis of GaN n(+)n structures
  Physica status solidi. B, Basic research, 2002, 234(3), 872-876.
 Web of Science® Times Cited: 2

Vanya Darakchieva, Jens Birch, Plamen Paskov, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth
  Physica status solidi. A, Applied research, 2002, 190(1), 59-64.
 Web of Science® Times Cited: 3

TV Shubina, Tanja Paskova, AA Toropov, SV Ivanov and Bo Monemar
  Polarized microphotoluminescence and reflectance spectroscopy of GaN with k perpendicular to c: Strongly pi-polarized line near the A exciton
  Physical Review B. Condensed Matter and Materials Physics, 2002, 65(7), .
 Web of Science® Times Cited: 11

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, Jens Birch, Sukkaneste Tungasmita and Bo Monemar
  Deformation potentials of the E-1(TO) mode in AlN
  Applied Physics Letters, 2002, 80(13), 2302-2304.
 Web of Science® Times Cited: 18

R Leon, J Ibanez, S Marcinkevicius, J Siegert, Tanja Paskova, Bo Monemar, S Chaparro, C Navarro, SR Johnson and YH Zhang
  Defect states in red-emitting InxAl1-xAs quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(8), .
 Web of Science® Times Cited: 1

E. Valcheva, Tanja Paskova, Per Persson, Lars Hultman and Bo Monemar
  Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy
  Applied Physics Letters, 2002, 80(9), 1550.
 Web of Science® Times Cited: 10

E. Valcheva, Tanja Paskova and Bo Monemar
  Extended defects in GaN films grown at high growth rate
  Journal of Physics: Condensed Matter, 2002, 14(48), 13269-13275.
 Web of Science® Times Cited: 6

Plamen Paskov, Vanya Darakchieva, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
  Physica status solidi. B, Basic research, 2002, 234(3), 892-896.
 Web of Science® Times Cited: 3

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the free exciton emission in GaN grown on a-plane sapphire
  Physica status solidi. A, Applied research, 2002, 190(1), 75-79.
 Web of Science® Times Cited: 18

Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Sukkaneste Tungasmita, Jens Birch and Bo Monemar
  Defect reduction in HVPE growth of GaN and related optical spectra
  Physica status solidi. A, Applied research, 2001, 183(1), 197-203.
 Web of Science® Times Cited: 9

EM Goldys, M Godlewski, Tanja Paskova, Galia Pozina and Bo Monemar
  Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN
  MRS Internet journal of nitride semiconductor research, 2001, 6(1), art. no.-1.
 Web of Science® Times Cited: 9

VV Ratnikov, RN Kyutt, Tatiana Shubina, Tanja Paskova and Bo Monemar
  Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers
  Journal of Physics D: Applied Physics, 2001, 34(10A), A30-A34.
 Web of Science® Times Cited: 19

B Arnaudov, Tanja Paskova, EM Goldys, S Evtimova and Bo Monemar
  Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(4), .
 Web of Science® Times Cited: 35

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Spin-exchange splitting of excitons in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(11), .
 Web of Science® Times Cited: 28

Bo Monemar, Plamen Paskov, Galia Pozina, Tanja Paskova, JP Bergman, M Iwaya, S Nitta, H Amano and I Akasaki
  Optical characterization of InGaN/GaN MQW structures without in phase separation
  Physica status solidi. B, Basic research, 2001, 228(1), 157-160.
 Web of Science® Times Cited: 5

Tanja Paskova, Plamen Paskov, EM Goldys, Vanya Darakchieva, U Sodervall, M Godlewski, M Zielinski, E Valcheva, CF Carlstrom and Qamar Ul Wahab
  Mass transport growth and properties of hydride vapour phase epitaxy GaN
  Physica status solidi. A, Applied research, 2001, 188(1), 447-451.
 Web of Science® Times Cited: 2

Tatiana Shubina, Tanja Paskova, AA Toropov, Alexander Lebedev, SV Ivanov and Bo Monemar
  Micro-photoluminescence spectroscopy of exciton-polaritons in GaN with the wave vector k normal to the c-axis
  Physica status solidi. B, Basic research, 2001, 228(2), 481-484.
 Web of Science® Times Cited: 1

Galia Pozina, N.V. Edwards, Peder Bergman, Tanja Paskova, Bo Monemar, M.D. Bremser and R.F. Davis
  Time-resolved spectroscopy of strained GaN/AIN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 2001, 78(8), 1062-1064.
 Web of Science® Times Cited: 9

E. Valcheva, Tanja Paskova, M.V. Abrashev, Per Persson, Plamen Paskov, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
  Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 35-38.
 Web of Science® Times Cited: 5

Tanja Paskova, E.M. Goldys, Plamen Paskov, Qamar Ul Wahab, Lars Wilzén, Michel P de Jong and Bo Monemar
  Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
  Applied Physics Letters, 2001, 78(26), 4130-4132.
 Web of Science® Times Cited: 6

Tanja Paskova, E. Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, Plamen Paskov, S. Evtimova, M. Abrashev and Bo Monemar
  Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
  Journal of Crystal Growth, 2001, 230(3-4), 381-386.
 Web of Science® Times Cited: 19

E. Valcheva, Tanja Paskova, M.V. Abrashev, Plamen Paskov, Per Persson, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
  Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
  Journal of Applied Physics, 2001, 90(12), 6011-6016.
 Web of Science® Times Cited: 14

Bo Monemar, Weimin Chen, Plamen Paskov, Tanja Paskova, Galia Pozina and Peder Bergman
  The 3.466 eV Bound Exciton in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 489-492.
 Web of Science® Times Cited: 7

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Internal structure of free excitons in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 467-470.
 Web of Science® Times Cited: 3

E Valcheva, Tanja Paskova, Sukkaneste Tungasmita, Per Persson, Jens Birch, EB Svedberg, Lars Hultman and Bo Monemar
  Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
  Applied Physics Letters, 2000, 76(14), 1860-1862.
 Web of Science® Times Cited: 22

Tanja Paskova, E Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, R Beccard, M Heuken and Bo Monemar
  Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
  Journal of Applied Physics, 2000, 88(10), 5729-5732.
 Web of Science® Times Cited: 9

V Ratnikov, R Kyutt, Tatiana Shubina, Tanja Paskova, E Valcheva and Bo Monemar
  Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
  Journal of Applied Physics, 2000, 88(11), 6252-6259.
 Web of Science® Times Cited: 34

Tanja Paskova, E.M. Goldys, Rositsa Yakimova, E.B. Svedberg, Anne Henry and Bo Monemar
  Influence of growth rate on the structure of thick GaN layers grown by HVPE
  Journal of Crystal Growth, 2000, 208(1), 18-26.
 Web of Science® Times Cited: 34

Galia Pozina, JP Bergman, Tanja Paskova and Bo Monemar
  Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy
  Applied Physics Letters, 1999, 75(26), 4124-4126.

Chapters in Books

Vanya Darakchieva, Tanja Paskova and M. Schubert
  Optical phonons in a-plane GaN under anisotropic strain
  Group-III nitrides with nonpolar surfaces: growth, properties and devices, Wiley, 2008, 219-253.


Conference Articles

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, Tanja Paskova and A. Usiui
  Mg related acceptors in GaN
  Phys. Status Solidi C 7, 2010.


 Web of Science® Times Cited: 4  Fulltext PDF

Nguyen Tien Son, Carl Hemmingsson, N. Morishita, T. Ohshima, Tanja Paskova, K.R. Evans, A Usui, J. Isoya, Bo Monemar and Erik Janzén
  Radiation-induced defects in GaN
  Physica Scripta, Vol. T141, 2010.


 Web of Science® Times Cited: 2

Plamen Paskov, Bo Monemar, Tanja Paskova, E.A. Preble, A.D. Hanser and K.R. Evans
  Optical characterization of bulk GaN substrates with c-, a-, and m-plane surfaces
  IWN 2008, 2008.


 Web of Science® Times Cited: 2

F. Tuomisto, J.M. Mäki, P. Pusa, J. Räisänen, Tanja Paskova, E. Valcheva and Bo Monemar
  Evolution of vacancy defects in GaN after H implantation and subsequent annealing
  IWN 2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, A.A. Toropov, Tatiana Choubina, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Tanja Paskova
  Properties of dopants and defects in GaN from bound exciton spectra
  Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008.


Plamen Paskov, Bo Monemar, Tanja Paskova, S. Kamiyama, H. Amano and I. Akasaki
  Photoluminescence study of near-surface GaN/AlN superlattices
  Proceedings of SPIE - The International Society for Optical Engineering, 2008.


Tanja Paskova, A.D. Hanser, E. Preble, K. Evans, R. Kroeger, F. Toumisto, R. Kersting, R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, Plamen Paskov and Bo Monemar
  Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis
  Proceedings of SPIE - The International Society for Optical Engineering, 2008.


Galia Pozina, Bo Monemar, Plamen Paskov, Carl Hemmingsson, Lars Hultman, H. Amano, I. Akasaki, Tanja Paskova, S. Figge, D. Hommel and A. Usui
  Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
  , 2007.


 Web of Science® Times Cited: 5

Tanja Paskova, L. Becker, T. Böttcher, D. Hommel, Plamen Paskov and Bo Monemar
  Bending in HVPE grown GaN films: origin and reduction possibilities
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 1

Tanja Paskova, R. Kroeger, D. Hommel, Plamen Paskov, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tutor
  Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 12

R. Kröger, Tanja Paskova, Bo Monemar, S. Figge, D. Hommel and A. Rosenauer
  Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 6

Vanya Darakchieva, Bo Monemar, Tanja Paskova, S. Einfeldt, D Hommel and S. Lourdudoss
  Phonons in strained AlGaN/GaN superlattices
  6th International Symposium on Blue Laser and Light Emitting Diodes,2006, 2007.


 Web of Science® Times Cited: 3

Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Roland Kröger, Detlef Hommel, Bo Monemar, Sebastian Lourdudoss, Edward Preble, Andrew Hanser, Mark N. Williams and Michael Tudor
  Strain-free low-defect-density bulk GaN with nonpolar orientation
  MRS Proceedings 2006 MRS Fall Meeting: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices, 2006.


Hans Arwin, Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, Mattias Schubert, S Figge, D Hommel, B A Haskell, P T Fini and S Nakamura
  Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
  ICSN-6,2005, 2005.


Tanja Paskova, T. Suski, M. Bockowski, Plamen Paskov, Vanya Darakchieva, Bo Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Röder and D. Hommel
  High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress
  MRS Fall Meeting,2004, 2005.


Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarisation dependent spectroscopy of the near bandgap emission in free-standing GaN
  2003 MRS Fall Meeting,2003, 2004.


Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
  Growth of GaN on a-plane sapphire: In-plane epitaxial relationships and lattice parameters
  Physica status solidi. B, Basic research, 2003.


 Web of Science® Times Cited: 7

Vanya Darakchieva, M. Schubert, Jens Birch, A. Kasic, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
  , 2003.


 Web of Science® Times Cited: 3

E. Valcheva, Tanja Paskova, G.Z. Radnoczi, Lars Hultman, Bo Monemar, H. Amano and I. Akasaki
  Growth-induced defects in AlN/GaN superlattices with different periods
  , 2003.


 Web of Science® Times Cited: 6

Bo Monemar, Plamen Paskov, Tanja Paskova, Peder Bergman, Galia Pozina, Weimin Chen, P.N. Hai, Irina A. Buyanova, H. Amano and I. Akasaki
  Optical characterization of III-nitrides
  , 2002.


 Web of Science® Times Cited: 20

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, U. Sodervall and Bo Monemar
  Growth and separation related properties of HVPE-GaN free-standing films
  Journal of Crystal Growth, 2002.


 Web of Science® Times Cited: 26

Tanja Paskova, Sukkaneste Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, S Evtimova, Per Persson, Anne Henry, R Beccard, M Heuken and Bo Monemar
  Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
  MRS99 Fall Meeting, 2000.


Bo Monemar, Peder Bergman, Galia Pozina, Irina Buyanova, Weimin Chen, Matthias Wagner and Tanja Paskova
  Defects in Gallium Nitride
  International Workshop on Materials Science,1999, 1999.