Publications for Sukkaneste Tungasmita

Publications for Sukkaneste TungasmitaCo-author map based on ISI articles 2007-

Keywords

vapor thick substrates strain sputtering sapphire reactive quality nm microscopy magnetron ion-assisted hydride gan film epitaxial defect buffer aln 6h-sic

Journal Articles

Tanja Paskova, Plamen Paskov, E Valcheva, Vanya Darakchieva, Jens Birch, A Kasic, B Arnaudov, Sukkaneste Tungasmita and Bo Monemar
  Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
  Physica status solidi. A, Applied research, 2004, 201(10), 2265-2270.
 Web of Science® Times Cited: 12

Sukkaneste Tungasmita, Per Persson, Timo Seppänen, Lars Hultman and Jens Birch
  Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition
  Materials Science Forum, 2002, 389-3, 1481-1484.

Timo Seppänen, GZ Radnoczi, Sukkaneste Tungasmita, Lars Hultman and Jens Birch
  Growth and characterization of epitaxial wurtzite Al1-xInxN thin films deposited by UHV reactive dual DC magnetron sputtering
  Materials Science Forum, 2002, 433-4, 987-990.

Vanya Darakchieva, Jens Birch, Plamen Paskov, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth
  Physica status solidi. A, Applied research, 2002, 190(1), 59-64.
 Web of Science® Times Cited: 3

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, Jens Birch, Sukkaneste Tungasmita and Bo Monemar
  Deformation potentials of the E-1(TO) mode in AlN
  Applied Physics Letters, 2002, 80(13), 2302-2304.
 Web of Science® Times Cited: 18

Sukkaneste Tungasmita, Per Persson, Lars Hultman and Jens Birch
  Pulsed low-energy ion-assisted growth of epitaxial aluminum nitride layer on 6H-silicon carbide by reactive magnetron sputtering
  Journal of Applied Physics, 2002, 91(6), 3551-3555.
 Web of Science® Times Cited: 6

Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Sukkaneste Tungasmita, Jens Birch and Bo Monemar
  Defect reduction in HVPE growth of GaN and related optical spectra
  Physica status solidi. A, Applied research, 2001, 183(1), 197-203.
 Web of Science® Times Cited: 9

Tanja Paskova, E. Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, Plamen Paskov, S. Evtimova, M. Abrashev and Bo Monemar
  Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
  Journal of Crystal Growth, 2001, 230(3-4), 381-386.
 Web of Science® Times Cited: 19

Sukkaneste Tungasmita, Jens Birch, Per Persson, Kenneth Järrendahl and Lars Hultman
  Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition
  Applied Physics Letters, 2000, 76(2), 170-172.
 Web of Science® Times Cited: 25

E Valcheva, Tanja Paskova, Sukkaneste Tungasmita, Per Persson, Jens Birch, EB Svedberg, Lars Hultman and Bo Monemar
  Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
  Applied Physics Letters, 2000, 76(14), 1860-1862.
 Web of Science® Times Cited: 22

Tanja Paskova, E Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, R Beccard, M Heuken and Bo Monemar
  Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
  Journal of Applied Physics, 2000, 88(10), 5729-5732.
 Web of Science® Times Cited: 9

Sukkaneste Tungasmita, Per Persson, Kenneth Järrendahl, Lars Hultman and Jens Birch
  Low-energy-ion-assisted reactive sputter deposition of epitaxial AlN thin films on 6H-SiC
  Materials Science Forum, 2000, 338-3, 1519-1522.
 Web of Science® Times Cited: 3

Conference Articles

Vanya Darakchieva, M. Schubert, Jens Birch, A. Kasic, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
  , 2003.


 Web of Science® Times Cited: 3

Tanja Paskova, Sukkaneste Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, S Evtimova, Per Persson, Anne Henry, R Beccard, M Heuken and Bo Monemar
  Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
  MRS99 Fall Meeting, 2000.