Publications for Stefano Leone
Co-author map based on ISI articles 2007-

Keywords

thick temperature substrates silicon sic quality precursors precursor on-axis off-axis mts gas epitaxial epilayers cvd chlorinated chloride-based c/si 4h-sic 3c-sic

Journal Articles

Stefano Leone, Anne Henry, Erik Janzén and S. Nishizawa
  Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
  Journal of Crystal Growth, 2013, 362, 170-173.
 Web of Science® Times Cited: 4

Nguyen Son Tien, Xuan Thang Trinh, Andreas Gällström, Stefano Leone, Olle Kordina, Erik Janzén, Krisztian Szasz, Viktor Ivady and Adam Gali
  Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
  Journal of Applied Physics, 2012, 112(8), 083711.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Henrik Pedersen, Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Yaroslav Koshka and Erik Janzén
  Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
  Chemical Reviews, 2012, 112(4), 2434-2453.
 Web of Science® Times Cited: 23

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
  Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
  Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
 Web of Science® Times Cited: 2

Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
  SiC epitaxy growth using chloride-based CVD
  Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Örjan Danielsson and Erik Janzén
  Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
  Crystal Growth & Design, 2012, 12(4), 1977-1984.
 Web of Science® Times Cited: 3

Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
  Deep levels in iron doped n- and p-type 4H-SiC
  Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
  Deep levels in tungsten doped n-type 3C-SiC
  Applied Physics Letters, 2011, 98(15), 152104.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  Chlorinated precursor study in low temperature CVD of 4H-SiC
  Thin Solid Films, 2011, 519(10), 3074-3080.
 Web of Science® Times Cited: 10

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
  Materials research bulletin, 2011, 46(8), 1272-1275.
 Web of Science® Times Cited: 8

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza and Vito Raineri
  Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
  NANOSCALE RESEARCH LETTERS, 2010, 6(120), .
 Web of Science® Times Cited: 2

Stefano Leone, Anne Henry, Sven Andersson, Olle Kordina and Erik Janzén
  Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers
  Journal of the Electrochemical Society, 2010, 157(10), H969-H979.
 Web of Science® Times Cited: 6

Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
  Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307.
 Web of Science® Times Cited: 14

Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
  Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
  Crystal Growth & Design, 2010, 10(8), 3743-3751.
 Web of Science® Times Cited: 10

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
  Crystal Growth & Design, 2010, 10(12), 5334-5340.
 Web of Science® Times Cited: 15

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone and Vito Raineri
  Toward an ideal Schottky barrier on 3C-SiC
  Applied Physics Letters, 2009, 95(8), .
 Web of Science® Times Cited: 21

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
  Journal of Crystal Growth, 2009, 312(1), 24-32.
 Web of Science® Times Cited: 13

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
  Journal of Crystal Growth, 2009, 311(12), 3265-3272.
 Web of Science® Times Cited: 23

Henrik Pedersen, Stefano Leone, Anne Henry, Anders Lundskog and Erik Janzén
  Growth characteristics of chloride-based SiC epitaxial growth
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(6), 278-280.
 Web of Science® Times Cited: 27

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
  Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
 Web of Science® Times Cited: 17

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
  Journal of Crystal Growth, 2007, 307(2), 334-340.
 Web of Science® Times Cited: 59

Conference Articles

Ivan Gueorguiev Ivanov, Andreas Gällström, Stefano Leone, Olle Kordina, Nguyen Tien Son, Anne Henry, Viktor Ivády, Adam Gali and Erik Janzén
  Optical properties of the niobium centre in 4H, 6H, and 15R SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Milan Yazdanfar, Stefano Leone, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Carrot defect control in chloride-based CVD through optimized ramp up conditions
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 4

Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
  Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Xun Li, Stefano Leone, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Nguyen Tien Son, V. Ivady, Adam Gali, Andreas Gällström, Stefano Leone, Olle Kordina and Erik Janzén
  Identification of Niobium in 4H-SiC by EPR and ab Initio Studies
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Anne Henry, Xun Li, Stefano Leone, Olof Kordina and Erik Janzén
  CVD growth of 3C-SiC on 4H-SiC substrate
  Materials Science Forum Vol 711, 2012.


 Web of Science® Times Cited: 1  Fulltext PDF

Anne Henry, Stefano Leone, Franziska C. Beyer, Sven Andersson, Olle Kordina and Erik Janzén
  Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>, 2011.


 Web of Science® Times Cited: 6  Fulltext PDF

Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.


 Web of Science® Times Cited: 6

Anne Henry, Steffano Leone, S. Andersson, Olle Kordina and Erik Janzén
  Concentrated chloride-based epitaxial growth of 4H-SiC
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 2  Fulltext PDF

Stefano Leone, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD at high growth rates on 3 vicinal off-angles SiC wafers
  ICSCRM2009, 2010.


 Web of Science® Times Cited: 4

Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
  AIP Conference Proceedings, Vol. 1292, 2010.


 Web of Science® Times Cited: 1

Franziska Beyer, Stefano Leone, Carl Hemmingsson, Anne Henry and Erik Janzén
  Deep levels in hetero-epitaxial as-grown 3C-SiC
  AIP Conference Proceedings, Vol. 1292, 2010.


 Web of Science® Times Cited: 1

Stefano Leone, Henrik Pedersen, Anne Henry, S. Rao, Olle Kordina and Erik Janzén
  Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
  Materials Science Forum, Vols. 615-617, 2009.


 Web of Science® Times Cited: 6

Anne Henry, Stefano Leone, Henrik Pedersen, Olle Kordina and Erik Janzén
  Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
  Materials Science Forum, Vols. 615-617, 2009.


Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
  Chloride-based SiC epitaxial growth
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 1

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC using MTS as chloride-based precursor
  Materials Science Forum, Vol. 600-603, 2009.


 Web of Science® Times Cited: 4

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD
  International Conference on Silicon Carbide and Related Materials(ICSCRM-2007), 14-19 October 2007, Lake Biwa Resort, Otsu, Japan, 2009.


 Web of Science® Times Cited: 19

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva and Erik Janzén
  Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
  Surface and Coatings Technology, Volume 201, Issue 22-23 SPEC. ISS., 2007.


 Web of Science® Times Cited: 9

Ph.D. Theses

Stefano Leone
  Advances in SiC growth using chloride-based CVD
  2010.


  Fulltext PDF