Publications for Stefano Leone
Co-author map based on ISI articles 2007-
Journal Articles
Stefano Leone, Anne Henry, Erik Janzén and S. Nishizawa
Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
Journal of Crystal Growth, 2013, 362, 170-173.
Web of Science® Times Cited: 1 |
Nguyen Son Tien, Xuan Thang Trinh, Andreas Gällström, Stefano Leone, Olle Kordina, Erik Janzén, Krisztian Szasz, Viktor Ivady and Adam Gali
Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
Journal of Applied Physics, 2012, 112(8), 083711.
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Henrik Pedersen, Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Yaroslav Koshka and Erik Janzén
Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
Chemical Reviews, 2012, 112(4), 2434-2453.
Web of Science® Times Cited: 4 |
Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
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Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
SiC epitaxy growth using chloride-based CVD
Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
Fulltext Web of Science® Times Cited: 1 |
Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Örjan Danielsson and Erik Janzén
Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
Crystal Growth & Design, 2012, 12(4), 1977-1984.
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Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
Deep levels in iron doped n- and p-type 4H-SiC
Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
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Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
Deep levels in tungsten doped n-type 3C-SiC
Applied Physics Letters, 2011, 98(15), 152104.
Fulltext Web of Science® Times Cited: 8 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
Chlorinated precursor study in low temperature CVD of 4H-SiC
Thin Solid Films, 2011, 519(10), 3074-3080.
Web of Science® Times Cited: 7 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
Materials research bulletin, 2011, 46(8), 1272-1275.
Web of Science® Times Cited: 5 |
Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza and Vito Raineri
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
NANOSCALE RESEARCH LETTERS, 2010, 6(120), .
Web of Science® Times Cited: 1 |
Stefano Leone, Anne Henry, Sven Andersson, Olle Kordina and Erik Janzén
Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers
Journal of the Electrochemical Society, 2010, 157(10), H969-H979.
Web of Science® Times Cited: 6 |
Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
Crystal Growth & Design, 2010, 10(8), 3743-3751.
Web of Science® Times Cited: 7 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
Crystal Growth & Design, 2010, 10(12), 5334-5340.
Web of Science® Times Cited: 8 |
Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307.
Web of Science® Times Cited: 8 |
Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone and Vito Raineri
Toward an ideal Schottky barrier on 3C-SiC
Applied Physics Letters, 2009, 95(8), .
Web of Science® Times Cited: 17 |
Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
Journal of Crystal Growth, 2009, 312(1), 24-32.
Web of Science® Times Cited: 8 |
Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
Journal of Crystal Growth, 2009, 311(12), 3265-3272.
Web of Science® Times Cited: 17 |
Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
Web of Science® Times Cited: 13 |
Henrik Pedersen, Stefano Leone, Anne Henry, Anders Lundskog and Erik Janzén
Growth characteristics of chloride-based SiC epitaxial growth
Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(6), 278-280.
Web of Science® Times Cited: 23 |
Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
Journal of Crystal Growth, 2007, 307(2), 334-340.
Web of Science® Times Cited: 47 |
Conference Articles
Milan Yazdanfar, Stefano Leone, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Carrot defect control in chloride-based CVD through optimized ramp up conditions
Materials Science Forum Vols 717 - 720, 2012.
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Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Materials Science Forum Vols 717 - 720, 2012.
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Xun Li, Stefano Leone, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
Materials Science Forum Vols 717 - 720, 2012.
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Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
Materials Science Forum Vols 717 - 720, 2012.
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Nguyen Tien Son, V. Ivady, Adam Gali, Andreas Gällström, Stefano Leone, Olle Kordina and Erik Janzén
Identification of Niobium in 4H-SiC by EPR and ab Initio Studies
Materials Science Forum Vols 717 - 720, 2012.
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Anne Henry, Xun Li, Stefano Leone, Olof Kordina and Erik Janzén
CVD growth of 3C-SiC on 4H-SiC substrate
Materials Science Forum Vol 711, 2012.
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Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
<em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.
Web of Science® Times Cited: 4
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Anne Henry, Stefano Leone, Franziska C. Beyer, Sven Andersson, Olle Kordina and Erik Janzén
Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
<em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>, 2011.
Web of Science® Times Cited: 1 Fulltext
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Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
AIP Conference Proceedings, Vol. 1292, 2010.
Web of Science® Times Cited: 1
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Anne Henry, Steffano Leone, S. Andersson, Olle Kordina and Erik Janzén
Concentrated chloride-based epitaxial growth of 4H-SiC
Materials Science Forum, Vols. 645-648, 2010.
Web of Science® Times Cited: 2 Fulltext
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Stefano Leone, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD at high growth rates on 3 vicinal off-angles SiC wafers
ICSCRM2009, 2010.
Web of Science® Times Cited: 1
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Franziska Beyer, Stefano Leone, Carl Hemmingsson, Anne Henry and Erik Janzén
Deep levels in hetero-epitaxial as-grown 3C-SiC
AIP Conference Proceedings, Vol. 1292, 2010.
Web of Science® Times Cited: 1
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Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
Chloride-based SiC epitaxial growth
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 1
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Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
Very high growth rate of 4H-SiC using MTS as chloride-based precursor
Materials Science Forum, Vol. 600-603, 2009.
Web of Science® Times Cited: 3
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Anne Henry, Stefano Leone, Henrik Pedersen, Olle Kordina and Erik Janzén
Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
Materials Science Forum, Vols. 615-617, 2009.
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Stefano Leone, Henrik Pedersen, Anne Henry, S. Rao, Olle Kordina and Erik Janzén
Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
Materials Science Forum, Vols. 615-617, 2009.
Web of Science® Times Cited: 6
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Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Homoepitaxial Growth of 4H-SiC on On-Axis Si-face Substrates using MTS as Chlorinated Precursors at High Growth Rate
Materials Science Forum, Vols. 600-603, 2009.
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Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 17
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Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva and Erik Janzén
Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
Surface and Coatings Technology, Volume 201, Issue 22-23 SPEC. ISS., 2007.
Web of Science® Times Cited: 6
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Ph.D. Theses
Ph.D., Lic. Theses
