Publications for Staffan Rudner
Co-author map based on ISI articles 2007-
Journal Articles
Conference Articles
Rolf Jonsson and Staffan Rudner
Broadband RF SiC MESFET power amplifiers
Materials Science Forum Vols. 483-485, 2005.
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Rolf Jonsson, Qamar Ul Wahab and Staffan Rudner
DC and RF performance of insulating gate 4H-SiC depletion mode Field Effect Transistors
Materials Science Forum, Vols. 457-460, 2004.
Web of Science® Times Cited: 1
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Rolf Jonsson, Qamar Wahab and Staffan Rudner
DC and RF performance of insulating gate 4H-SiC depletion mode field effect transistors
Materials Science Forum Vols. 457-460, 2004.
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J. Eriksson, N. Rorsman, H. Zirath, Rolf Jonsson, Qamar Wahab and Staffan Rudner
A comparison between physical simulations and experimental results in 4H-SiC MESFETs with non-constant doping in the channel and buffer layers
Maretials Science Forum Vols. 353-356, 2001.
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Rolf Johansson, Qamar Wahab and Staffan Rudner
Physical simulations on the Operation of 4H-SiC Microwave Power Transistors
Materials Science Forum Vols. 338-342, 2000.
Web of Science® Times Cited: 2
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Ph.D., Lic. Theses
