Publications for Staffan Rudner
Co-author map based on ISI articles 2007-

Journal Articles

Rolf Jonsson and Staffan Rudner
  Broadband RF SiC MESFET power amplifiers
  Materials Science Forum, 2005, 483, 857-860.

Xin Wang, Ulf Helmersson, Lynnette D Madsen, Ivan Ivanov, Peter Münger, Staffan Rudner, B Hjörvarsson and Jan-Erik Sundgren
  Composition, structure, and dielectric tunability of epitaxial SrTiO3 thin films grown by radio frequency magnetron sputtering
  Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 1999, 17(2), 564-570.

Conference Articles

Rolf Jonsson and Staffan Rudner
  Broadband RF SiC MESFET power amplifiers
  Materials Science Forum Vols. 483-485, 2005.


Rolf Jonsson, Qamar Ul Wahab and Staffan Rudner
  DC and RF performance of insulating gate 4H-SiC depletion mode Field Effect Transistors
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 1

Rolf Jonsson, Qamar Wahab and Staffan Rudner
  DC and RF performance of insulating gate 4H-SiC depletion mode field effect transistors
  Materials Science Forum Vols. 457-460, 2004.


J. Eriksson, N. Rorsman, H. Zirath, Rolf Jonsson, Qamar Wahab and Staffan Rudner
  A comparison between physical simulations and experimental results in 4H-SiC MESFETs with non-constant doping in the channel and buffer layers
  Maretials Science Forum Vols. 353-356, 2001.


Rolf Johansson, Qamar Wahab and Staffan Rudner
  Physical simulations on the Operation of 4H-SiC Microwave Power Transistors
  Materials Science Forum Vols. 338-342, 2000.


 Web of Science® Times Cited: 2