Göm menyn

Publications for Sher Azam

Co-author map based on Web of Sciences articles 2007-

Journal Articles

Sher Azam, Christer Svensson, Qamar Ul Wahab and R. Jonsson
  Comparison of Two GaN Transistor Technologies in Broadband Power Amplifiers
  MICROWAVE JOURNAL, 2010, 53(4), 184-192.
 Web of Science® Times Cited: 1

Sher Azam, Christer Svensson and Qamar Wahab
  Pulse Input Class-C Power Amplifier Response of SiC MESFET using Physical Transistor Structure in TCAD
  Solid-State Electronics, 2008, 52(5), 740-744.
 Web of Science® Times Cited: 1

Ahsan-Ullah Kashif, T. Johansson, Christer Svensson, Sher Azam, T. Arnborg and Qamar Wahab
  Influence of interface state charges on RF performance of LDMOS transistor
  Solid-State Electronics, 2008, 52(7), 1099-1105.
 Web of Science® Times Cited: 3

Conference Articles

Sher Azam, Rolf Jonsson, Jonas Fritzin, Atila Alvandpour and Qamar Wahab
  High Power, Single Stage SiGaN HEMT Class E Power Amplifier at GHz Frequencies
  IEEE International Bhurban Conference on Applied Sciences and Technology, 2010.

Sher Azam, Rolf Jonsson and Qamar Wahab
  Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies
  IEEE European Microwave Week, October 10-15, Amsterdam, The Netherlands, 2008.

Ahsan-Ullah Kashif, Sher Azam, Christer Svensson and Qamar Ul Wahab
  Flexible power amplifier designing form device to circuit level by computational load-pull simulation technique
  Microelectonics Technology and Devices - SBMicro 2008, Vol. 14, issue 1: J. Swart, S. Selberherr, A. Susin, J. Diniz, N. Morimoto, 2008.

Sher Azam, R. Jonsson, Erik Janzén and Qamar Ul Wahab
  Performance of SiC Microwave Transistors in Power Amplifiers
  Proc. of MRS Symposium on wide bandgap semiconductor electronics 8, 2008.

Sher Azam, Christer Svensson and Qamar Ul Wahab
  Designing of high efficiency power amplifier based on physical model of SiC MESFET in TCAD.
  International Bhurban conference on applied sciences technology.,2001, 2007.

Sher Azam, R. Jonsson and Qamar Ul Wahab
  The limiting frontiers of maximum DC voltage at drain of SiC microwave power transistors in case of Class A power amplifiers
  International Semiconductor Device Research Symposium 2007 ISDRS-07,2007, 2007.

Sher Azam, Rolf Jonsson and Qamar Wahab
  Single-stage, High Efficiency, 26-Watt power Amplifier using SiC LE-MESFET
  Microwave Conference, 2006. APMC 2006. Asia-Pacific December 12-15, 2006.

Ph.D. Theses

Sher Azam
  Microwave Power Devices and Amplifiers for Radars and Communication Systems

  Fulltext PDF

Licentiate Theses

Sher Azam
  Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

  Fulltext PDF


Responsible for this page: Peter Berkesand
Last updated: 2017-02-21