Publications for Sadia Muniza Faraz
Co-author map based on ISI articles 2007-

Journal Articles

Sadia Muniza Faraz, H Ashraf, M Imran Arshad, P R Hageman, M Asghar and Qamar Ul Wahab
  Interface state density of free-standing GaN Schottky diodes
  Semiconductor Science and Technology, 2010, 25(9), 095008.
 Web of Science® Times Cited: 3

Hadia Noor, P Klason, Sadia Muniza Faraz, Omer Nour, Qamar Ul Wahab, Magnus Willander and M Asghar
  Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices
  JOURNAL OF APPLIED PHYSICS, 2010, 107(10), .
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 Web of Science® Times Cited: 3

H. Ashraf, M. Imran Arshad, Sadia Muniza Faraz, Qamar Ul Wahab, P. R. Hageman and M. Asghar
  Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
  Journal of Applied Physics, 2010, 108(10), .
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Sadia Muniza Faraz, Hadia Noor, M. Asghar, Magnus Willander and Qamar ul Wahab
  Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements
  Advanced Materials Research, 2009, 79-82, 1317-1320.
 Web of Science® Times Cited: 1

Conference Articles

M. Asghar, F. Iqbal, Sadia Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
  26th International Conference on Defects in Semiconductors, 2012.


 Web of Science® Times Cited: 1

M. Asghar, F. Iqbal, Sadia Municha Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
  -, 2012.


 Web of Science® Times Cited: 1

Licentiate Theses

Sadia Muniza Faraz
  Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
  2011.


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