Publications for Sadia Muniza Faraz
Co-author map based on ISI articles 2007-

Journal Articles

H. Ashraf, M. Imran Arshad, Sadia Muniza Faraz, Qamar Ul Wahab, P. R. Hageman and M. Asghar
  Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
  Journal of Applied Physics, 2010, 108(10), .
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 Web of Science® Times Cited: 2

Sadia Muniza Faraz, H Ashraf, M Imran Arshad, P R Hageman, M Asghar and Qamar Ul Wahab
  Interface state density of free-standing GaN Schottky diodes
  Semiconductor Science and Technology, 2010, 25(9), 095008.
 Web of Science® Times Cited: 3

Hadia Noor, P Klason, Sadia Muniza Faraz, Omer Nour, Qamar Ul Wahab, Magnus Willander and M Asghar
  Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices
  JOURNAL OF APPLIED PHYSICS, 2010, 107(10), .
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 Web of Science® Times Cited: 2

Sadia Muniza Faraz, Hadia Noor, M. Asghar, Magnus Willander and Qamar ul Wahab
  Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements
  Advanced Materials Research, 2009, 79-82, 1317-1320.
 Web of Science® Times Cited: 1

Conference Articles

M. Asghar, F. Iqbal, Sadia Municha Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
  -, 2012.


M. Asghar, F. Iqbal, Sadia Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
  26th International Conference on Defects in Semiconductors, 2012.


Licentiate Theses

Sadia Muniza Faraz
  Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
  2011.


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