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Publications for Rositsa Yakimova


Co-author map based on Web of Sciences articles 2007-

Publications mentioned in social media 201 times*

Journal Articles

A. Ievtushenko, V. Karpyna, Jens Eriksson, I. Tsiaoussis, Ivan Shtepliuk, G. Lashkarev, Rositsa Yakimova and Volodymyr Khranovskyy
  Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures
  Superlattices and Microstructures, 2018, 117, 121-131.

M. M. Gomaa, Gholamreza Yazdi, Marius Rodner, Grzegorz Greczynski, M. Boshta, M. B. S. Osman, Volodymyr Khranovskyy, Jens Eriksson and Rositsa Yakimova
  Exploring NiO nanosize structures for ammonia sensing
  Journal of materials science. Materials in electronics, 2018, 29(14), 11870-11877.

Nerijus Armakavicius, Chamseddine Bouhafs, Vallery Stanishev, Philipp Kühne, Rositsa Yakimova, Sean Knight, Tino Hofmann, Mathias Schubert and Vanya Darakchieva
  Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
  Applied Surface Science, 2017, 421, 357-360.
 Web of Science® Times Cited: 2

Volodymyr Khranovskyy, Ivan Shtepliuk, L. Vines and Rositsa Yakimova
  Complementary study of the photoluminescence and electrical properties of ZnO films grown on 4H-SiC substrates
  Journal of Luminescence, 2017, 181, 374-381.
 Web of Science® Times Cited: 1

Mohammed Metwally Gomaa Ahmad, Gholamreza Yazdi, Susann Schmidt, M. Boshta, Volodymyr Khranovskyy, Fredrik Eriksson, B. S. Farag, M. B. S. Osman and Rositsa Yakimova
  Effect of precursor solutions on the structural and optical properties of sprayed NiO thin films
  Materials Science in Semiconductor Processing, 2017, 64, 32-38.
 Web of Science® Times Cited: 4

Oleg Makarovsky, Lyudmila Turyanska, Nobuya Mori, Mark Greenaway, Laurence Eaves, Amalia Patane, Mark Fromhold, Samuel Lara-Avila, Sergey Kubatkin and Rositsa Yakimova
  Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots
  2D MATERIALS, 2017, 4(3), .
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F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, Rositsa Yakimova, R. Dagher, A. Michon and Y. Cordier
  Graphene integration with nitride semiconductors for high power and high frequency electronics
  Physica Status Solidi (a) applications and materials science, 2017, 214(4), .
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 Web of Science® Times Cited: 5

Rositsa Yakimova, Ivan Gueorguiev Ivanov, Lasse Vines, Margareta K. Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi and Valdas Jokubavicius
  Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
  ECS Journal of Solid State Science and Technology, 2017, 6(10), P741-P745.

Ivan Shtepliuk, Volodymyr Khranovskyy and Rositsa Yakimova
  Insights into the origin of the excited transitions in graphene quantum dots interacting with heavy metals in different media
  Physical Chemistry, Chemical Physics - PCCP, 2017, 19(45), 30445-30463.

Sean Knight, Tino Hofmann, Chamseddine Bouhafs, Nerijus Armakavicius, Philipp Kuhne, Vallery Stanishev, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Shawn Wimer, Mathias Schubert and Vanya Darakchieva
  In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
  Scientific Reports, 2017, 7, .
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 Web of Science® Times Cited: 1

A. Nachawaty, M. Yang, W. Desrat, S. Nanot, B. Jabakhanji, D. Kazazis, Rositsa Yakimova, A. Cresti, W. Escoffier and B. Jouault
  Magnetic field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point
  Physical Review B, 2017, 96(7), .
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Y. R. Niu, A. A. Zakharov and Rositsa Yakimova
  Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)
  Ultramicroscopy, 2017, 183, 49-54.

Mikhail Vagin, Alina Sekretareva, Ivan Gueorguiev Ivanov, Anna Håkansson, Tihomir Iakimov, Mikael Syväjärvi, Rositsa Yakimova, Ingemar Lundström and Mats Eriksson
  Monitoring of epitaxial graphene anodization
  Electrochimica Acta, 2017, 238, 91-98.
 Web of Science® Times Cited: 1

Chamseddine Bouhafs, A. A. Zakharov, Ivan Gueorguiev Ivanov, F. Giannazzo, Jens Eriksson, Vallery Stanishev, Philipp Kuhne, Tihomir Iakimov, Tino Hofmann, Mathias Schubert, F. Roccaforte, Rositsa Yakimova and Vanya Darakchieva
  Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
  Carbon, 2017, 116, 722-732.
 Web of Science® Times Cited: 5

Cassandra Chua, Arseniy Lartsev, Jinggao Sui, Vishal Panchal, Reuben Puddy, Carly Richardson, Charles G. Smith, T. J. B. M. Janssen, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin and Malcolm R. Connolly
  Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC
  Carbon, 2017, 119, 426-430.

Ivan Shtepliuk, Nuala M. Caffrey, Tihomir Iakimov, Volodymyr Khranovskyy, Igor Abrikosov and Rositsa Yakimova
  On the interaction of toxic Heavy Metals (Cd, Hg, Pb) with graphene quantum dots and infinite graphene
  Scientific Reports, 2017, 7, .
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 Web of Science® Times Cited: 3

Ivan Shtepliuk, Tihomir Iakimov, Volodymyr Khranovskyy, Jens Eriksson, Filippo Giannazzo and Rositsa Yakimova
  Role of the Potential Barrier in the Electrical Performance of the Graphene/SiC Interface
  Crystals, 2017, 7(6), .
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 Web of Science® Times Cited: 1

Volodymyr Khranovskyy, Mariana Sendova, Brian Hosterman, Navin McGinnis, Ivan Shtepliuk and Rositsa Yakimova
  Temperature dependent study of basal plane stacking faults in Ag:ZnO nanorods by Raman and photoluminescence spectroscopy
  Materials Science in Semiconductor Processing, 2017, 69, 62-67.
 Web of Science® Times Cited: 1

Kyung Ho Kim, Samuel Lara-Avila, Hans He, Hojin Kang, Yung Woo Park, Rositsa Yakimova and Sergey Kubatkin
  Thermal Stability of Epitaxial Graphene Electrodes for Conductive Polymer Nanofiber Devices
  Crystals, 2017, 7(12), .
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 Web of Science® Times Cited: 1

Roman Viter, Alla Tereshchenko, Valentyn Smyntyna, Julia Ogorodniichuk, Nickolay Starodub, Rositsa Yakimova, Volodymyr Khranovskyy and Arunas Ramanavicius
  Toward development of optical biosensors based on photoluminescence of TiO2 nanoparticles for the detection of Salmonella
  Sensors and actuators. B, Chemical, 2017, 252, 95-102.
 Web of Science® Times Cited: 6

Alla Tereshchenko, Viktoriia Fedorenko, Valentyn Smyntyna, Igor Konup, Anastasiya Konup, Martin Eriksson, Rositsa Yakimova, Arunas Ramanavicius, Sebastien Balme and Mikhael Bechelany
  ZnO films formed by atomic layer deposition as an optical biosensor platform for the detection of Grapevine virus A-type proteins
  Biosensors & bioelectronics, 2017, 92, 763-769.
 Web of Science® Times Cited: 9

Kateryna Shavanova, Yulia Bakakina, Inna Burkova, Ivan Shtepliuk, Roman Viter, Arnolds Ubelis, Valerio Beni, Nickolaj Starodub, Rositsa Yakimova and Volodymyr Khranovskyy
  Application of 2D Non-Graphene Materials and 2D Oxide Nanostructures for Biosensing Technology
  Sensors, 2016, 16(2), .
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 Web of Science® Times Cited: 15

Nuala M. Caffrey, Rickard Armiento, Rositsa Yakimova and Igor Abrikosov
  Changes in work function due to NO2 adsorption on monolayer and bilayer epitaxial graphene on SiC(0001)
  Physical Review B, 2016, 94(20), .
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 Web of Science® Times Cited: 1

Ivan Shtepliuk, Volodymyr Khranovskyy and Rositsa Yakimova
  Combining graphene with silicon carbide: synthesis and properties - a review
  Semiconductor Science and Technology, 2016, 31(11), 113004.
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 Web of Science® Times Cited: 3

Chamseddine Bouhafs, Vallery Stanishev, A. A. Zakharov, Tino Hofmann, Philipp Kuhne, Tihomir Iakimov, Rositsa Yakimova, Mathias Schubert and Vanya Darakchieva
  Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)
  Applied Physics Letters, 2016, 109(20), .
 Web of Science® Times Cited: 1

M. Beshkova, Lars Hultman and Rositsa Yakimova
  Device applications of epitaxial graphene on silicon carbide
  Vacuum, 2016, 128, 186-197.
 Web of Science® Times Cited: 11

Ivan Shtepliuk, Volodymyr Khranovskyy and Rositsa Yakimova
  Effect of c-axis inclination angle on the properties of ZnO/Zn1-xCdxO/ZnO quantum wells
  Thin Solid Films, 2016, 603, 139-148.
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 Web of Science® Times Cited: 1

V. S. Prudkovskiy, K. P. Katin, M. M. Maslov, P. Puech, Rositsa Yakimova and G. Deligeorgis
  Efficient cleaning of graphene from residual lithographic polymers by ozone treatment
  Carbon, 2016, 109, 221-226.
 Web of Science® Times Cited: 4

Gholamreza Yazdi, Tihomir Iakimov and Rositsa Yakimova
  Epitaxial Graphene on SiC: A Review of Growth and Characterization
  Crystals, 2016, 6(5), .
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 Web of Science® Times Cited: 13

J. A. Alexander-Webber, J. Huang, D. K. Maude, T. J. B. M. Janssen, A. Tzalenchuk, V. Antonov, T. Yager, S. Lara-Avila, S. Kubatkin, Rositsa Yakimova and R. J. Nicholas
  Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene
  Scientific Reports, 2016, 6(30296), .
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 Web of Science® Times Cited: 7

Valdas Jokubavicius, Jianwu Sun, Xinyu Liu, Gholamreza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova and Mikael Syväjärvi
  Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
  Journal of Crystal Growth, 2016, 448, 51-57.

J. Pallon, Mikael Syväjärvi, Q. Wang, Rositsa Yakimova, Tihomir Iakimov, M. Elfman, P. Kristiansson, E. J. C. Nilsson and L. Ros
  Ion beam evaluation of silicon carbide membrane structures intended for particle detectors
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2016, 371, 132-136.

Volodymyr Khranovskyy, Ivan Shtepliuk, Ivan Gueorguiev Ivanov, I. Tsiaoussis and Rositsa Yakimova
  Light emission enhancement from ZnO nanostructured films grown on Gr/SiC substrates
  Carbon, 2016, 99, 295-301.
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 Web of Science® Times Cited: 2

Jens Eriksson, Donatella Puglisi, Carl Strandqvist, Rickard Gunnarsson, Sebastian Ekeroth, Ivan Gueorguiev Ivanov, Ulf Helmersson, Kajsa Uvdal, Rositsa Yakimova and Anita Lloyd Spetz
  Modified Epitaxial Graphene on SiC for Extremely Sensitive andSelective Gas Sensors
  Materials Science Forum, 2016, 858, 1145-1148.

Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz and Rositsa Yakimova
  Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals
  Beilstein Journal of Nanotechnology, 2016, 7, 1800-1814.
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 Web of Science® Times Cited: 4

Alla Tereshchenko, Mikhael Bechelany, Roman Viter, Volodymyr Khranovskyy, Valentyn Smyntyna, Nikolay Starodub and Rositsa Yakimova
  Optical biosensors based on ZnO nanostructures: advantages and perspectives. A review
  Sensors and actuators. B, Chemical, 2016, 229, 664-677.
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 Web of Science® Times Cited: 49

M. Yang, O. Couturaud, W. Desrat, C. Consejo, D. Kazazis, Rositsa Yakimova, Mikael Syväjärvi, M. Goiran, J. Beard, P. Frings, M. Pierre, A. Cresti, W. Escoffier and B. Jouault
  Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect
  Physical Review Letters, 2016, 117(23), .
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 Web of Science® Times Cited: 4

J. J. van den Berg, Rositsa Yakimova and B. J. van Wees
  Spin transport in epitaxial graphene on the C-terminated (000(1)over-bar)-face of silicon carbide
  Applied Physics Letters, 2016, 109(1), 012402.
 Web of Science® Times Cited: 1

Valdas Jokubavicius, Gholamreza Yazdi, Ivan G. Ivanov, Yuran Niu, Alexei Zakharov, Tihomir Lakimov, Mikael Syväjärvi and Rositsa Yakimova
  Surface engineering of SiC via sublimation etching
  Applied Surface Science, 2016, 390, 816-822.
 Web of Science® Times Cited: 4

Azar Sadollah Khani, Omer Nour, Magnus Willander, Iraj Kazeminezhad, Volodymyr Khranovskyy, Martin O. Eriksson, Rositsa Yakimova and Per-Olof Holtz
  A detailed optical investigation of ZnO@ZnS core-shell nanoparticles and their photocatalytic activity at different pH values
  Ceramics International, 2015, 41(5), 7174-7184.
 Web of Science® Times Cited: 20

A. Lartsev, S. Lara-Avila, A. Danilov, S. Kubatkin, A. Tzalenchuk and Rositsa Yakimova
  A prototype of R-K/200 quantum Hall array resistance standard on epitaxial graphene
  Journal of Applied Physics, 2015, 118(4), 044506.
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 Web of Science® Times Cited: 7

V. Khomyak, I. Shtepliuk, Volodymyr Khranovskyy and Rositsa Yakimova
  Band-gap engineering of ZnO1-xSx films grown by rf magnetron sputtering of ZnS target
  Vacuum, 2015, 121, 120-124.
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 Web of Science® Times Cited: 7

Mai Caffrey Nuala, Rickard Armiento, Rositsa Yakimova and Igor Abrikosov
  Charge neutrality in epitaxial graphene on 6H-SiC(0001) via nitrogen intercalation
  Physical Review B. Condensed Matter and Materials Physics, 2015, 92(8), .
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 Web of Science® Times Cited: 10

Dzmitry Sodzel, Volodymyr Khranovskyy, Valerio Beni, Anthony P F Turner, Roman Viter, Martin O Eriksson, Per-Olof Holtz, Jean-Marc Janot, Mikhael Bechelany, Sebastien Belma, Valentyn Smyntyna, Ekaterina Kolesneva, Lyudmila Dubovskaya, Igor Volotovski, Arnolds Ubelis and Rositsa Yakimova
  Control of hydrogen peroxide and glucose via UV and Visible Photoluminescence of ZnO nanoparticles.
  Microchimica Acta, 2015, 182(9-10), 1819-1826.
 Web of Science® Times Cited: 39

Ivan Shtepliuk, Volodymyr Khranovskyy and Rositsa Yakimova
  Effect of Zn-Cd interdiffusion on the band structure and spontaneous emission of ZnO/Zn1-xCdxO/ZnO quantum wells
  Superlattices and Microstructures, 2015, 85, 438-444.
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 Web of Science® Times Cited: 4

B. Pecz, L. Toth, G. Tsiakatouras, A. Adikimenakis, A. Kovacs, M. Duchamp, R. E. Dunin-Borkowski, Rositsa Yakimova, P. L. Neumann, H. Behmenburg, B. Foltynski, C. Giesen, M. Heuken and A. Georgakilas
  GaN heterostructures with diamond and graphene
  Semiconductor Science and Technology, 2015, 30(11), 114001.
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 Web of Science® Times Cited: 2

Andras Kovacs, Martial Duchamp, Rafal E. Dunin-Borkowski, Rositsa Yakimova, Peter L. Neumann, Hannes Behmenburg, Bartosz Foltynski, Cristoph Giesen, Michael Heuken and Bela Pecz
  Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC
  ADVANCED MATERIALS INTERFACES, 2015, 2(2), .
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 Web of Science® Times Cited: 6

Tom Yager, Matthew J. Webb, Helena Grennberg, Rositsa Yakimova, Samuel Lara-Avila and Sergey Kubatkin
  High mobility epitaxial graphene devices via aqueous-ozone processing
  Applied Physics Letters, 2015, 106(6), 063503.
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 Web of Science® Times Cited: 6

Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba, Joshua A. Folk, Silvia Luescher, Rositsa Yakimova, T. J. B. M. Janssen, Alexander Tzalenchuk and Vladimir Falko
  Influence of Impurity Spin Dynamics on Quantum Transport in Epitaxial Graphene
  Physical Review Letters, 2015, 115(10), 106602.
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 Web of Science® Times Cited: 7

G. Nicotra, I. Deretzis, M. Scuderi, C. Spinella, P. Longo, Rositsa Yakimova, F. Giannazzo and A. La Magna
  Interface disorder probed at the atomic scale for graphene grown on the C face of SiC
  Physical Review B. Condensed Matter and Materials Physics, 2015, 91(15), 155411.
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 Web of Science® Times Cited: 7

Tom Yager, Arseniy Lartsev, Karin Cedergren, Rositsa Yakimova, Vishal Panchal, Olga Kazakova, Alexander Tzalenchuk, Kyung Ho Kim, Yung Woo Park, Samuel Lara-Avila and Sergey Kubatkin
  Low contact resistance in epitaxial graphene devices for quantum metrology
  AIP Advances, 2015, 5(8), 087134.
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 Web of Science® Times Cited: 4

T. J. B. M. Janssen, S. Rozhko, I. Antonov, A. Tzalenchuk, J. M. Williams, Z. Melhem, H. He, S. Lara-Avila, S. Kubatkin and Rositsa Yakimova
  Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
  2D MATERIALS, 2015, 2(3), 035015.
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 Web of Science® Times Cited: 25

J. Huang, J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, V. Antonov, T. Yager, S. Lara-Avila, S. Kubatkin, Rositsa Yakimova and R. J. Nicholas
  Physics of a disordered Dirac point in epitaxial graphene from temperature-dependent magnetotransport measurements
  Physical Review B. Condensed Matter and Materials Physics, 2015, 92(7), 075407.
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 Web of Science® Times Cited: 5

Valdas Jokubavicius, Gholam Reza Yazdi, Rickard Liljedahl, Ivan Gueorguiev Ivanov, Jianwu Sun, Xinyu Liu, Schuh Philipp, Martin Wilhelm, Peter Wellmann, Rositsa Yakimova and Mikael Syväjärvi
  Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
  Crystal Growth & Design, 2015, 15(6), 2940-2947.
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 Web of Science® Times Cited: 12

V. M. Mikoushkin, V. V. Shnitov, A. A. Lebedev, S. P. Lebedev, S. Yu. Nikonov, O. Yu. Vilkou, T. Iakimou and Rositsa Yakimova
  Size confinement effect in graphene grown on 6H-SiC (0001) substrate
  Carbon, 2015, 86, 139-145.
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 Web of Science® Times Cited: 6

Somsakul Watcharinyanon, Chao Xia, Yuran Niu, Alexei A. Zakharov, Leif I Johansson, Rositsa Yakimova and Chariya Virojanadara
  Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC
  Materials, 2015, 8(8), 4768-4777.
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 Web of Science® Times Cited: 1

Chamseddine Bouhafs, Vanya Darakchieva, Ingemar Persson, A. Tiberj, Per O A Persson, M. Paillet, A. -A. Zahab, P. Landois, S. Juillaguet, S. Schoeche, M. Schubert and Rositsa Yakimova
  Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)
  Journal of Applied Physics, 2015, 117(8), 085701.
 Web of Science® Times Cited: 8

R. E. Hill-Pearce, V. Eless, A. Lartsev, N. A. Martin, I. L. Barker Snook, J. J. Helmore, Rositsa Yakimova, J. C. Gallop and L. Hao
  The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating
  Carbon, 2015, 93, 896-902.
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 Web of Science® Times Cited: 5

Ivan Shtepliuk, Volodymyr Khranovskyy and Rositsa Yakimova
  Theoretical study of O- and Zn-face polarity effect on the optical properties of the conventional and staggered ZnO/Zn1-xCdxO/ZnO quantum wells
  Thin Solid Films, 2015, 594, 323-327.
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 Web of Science® Times Cited: 2

I. Shtepliuk, V. Khomyak, Volodymyr Khranovskyy and Rositsa Yakimova
  Valence band structure and optical properties of ZnO1-xSx ternary alloys
  Journal of Alloys and Compounds, 2015, 649, 878-884.
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 Web of Science® Times Cited: 3

Tom Yager, Arseniy Lartsev, Rositsa Yakimova, Samuel Lara-Avila and Sergey Kubatkin
  Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC
  Carbon, 2015, 87, 409-414.
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 Web of Science® Times Cited: 15

Susanna K. Eriksson, Maria Hahlin, Juhan Matthias Kahk, Ignacio J. Villar-Garcia, Matthew J. Webb, Helena Grennberg, Rositsa Yakimova, Hakan Rensmo, Kristina Edstrom, Anders Hagfeldt, Hans Siegbahn, Marten O. M. Edwards, Patrik G. Karlsson, Klas Backlund, John Ahlund and David J. Payne
  A versatile photoelectron spectrometer for pressures up to 30 mbar
  Review of Scientific Instruments, 2014, 85(7), 075119.
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 Web of Science® Times Cited: 19

Jens Eriksson, Donatella Puglisi, Yu Hsuan Kang, Rositsa Yakimova and Anita Lloyd Spetz
  Adjusting the electronic properties and gas reactivity of epitaxial graphene by thin surface metallization
  Physica. B, Condensed matter, 2014, 439, 105-108.
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 Web of Science® Times Cited: 4

Roman Viter, Volodymyr Khranovskyy, Nikolay Starodub, Yulia Ogorodniichuk, Sergey Gevelyuk, Zanda Gertnere, Nicolay Poletaev, Rositsa Yakimova, Donats Erts, Valentyn Smyntyna and Arnolds Ubelis
  Application of Room Temperature Photoluminescence from ZnO Nanorods for Salmonella Detection
  IEEE Sensors Journal, 2014, 14(6), 2028-2034.
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 Web of Science® Times Cited: 21

Thomas Hardisty Bointon, Ivan Khrapach, Rositsa Yakimova, Andrey V. Shytov, Monica F. Craciun and Saverio Russo
  Approaching Magnetic Ordering in Graphene Materials by FeCl3 Intercalation
  Nano letters (Print), 2014, 14(4), 1751-1755.
 Web of Science® Times Cited: 27

Yiyu Ou, Xiaolong Zhu, Valdas Jokubavicius, Rositsa Yakimova, N. Asger Mortensen, Mikael Syväjärvi, Sanshui Xiao and Haiyan Ou
  Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures
  Scientific Reports, 2014, 4, 4662.
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 Web of Science® Times Cited: 13

Volodymyr Khranovskyy, Martin O. Eriksson, György Zoltán Radnóczi, Abbas Khalid, Hongzhou Zhang, Per-Olof Holtz, Lars Hultman and Rositsa Yakimova
  Correction: Photoluminescence study of basal plane stacking faults in ZnO nanowires (vol 4639, pg 50, 2014)
  Physica. B, Condensed matter, 2014, 454, 279-279.

S. Gurban, B. Pecz, M. Menyhard and Rositsa Yakimova
  Determination of the thickness distribution of a graphene layer grown on a 2 SiC wafer by means of Auger electron spectroscopy depth profiling
  Applied Surface Science, 2014, 316, 301-307.
 Web of Science® Times Cited: 3

Volodymyr Khranovskyy, Ioannis Tsiaoussis, Martin Eriksson and Rositsa Yakimova
  Effect of Ag doping on the microstructure and photoluminescence of ZnO nanostructures
  Physica Status Solidi (a) applications and materials science, 2014, 211(9), 2109-2114.
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 Web of Science® Times Cited: 4

Matthew J. Webb, Craig Polley, Kai Dirscherl, Gregory Burwell, Pal Palmgren, Yuran Niu, Anna Lundstedt, Alexei A. Zakharov, Owen J. Guy, Thiagarajan Balasubramanian, Rositsa Yakimova and Helena Grennberg
  Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene
  Applied Physics Letters, 2014, 105(8), 081602.
 Web of Science® Times Cited: 2

Cristina E. Giusca, Steve J. Spencer, Alex G. Shard, Rositsa Yakimova and Olga Kazakova
  Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods
  Carbon, 2014, 69, 221-229.
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 Web of Science® Times Cited: 9

Philip Hens, Alexei A. Zakharov, Tihomir Iakimov, Mikael Syväjärvi and Rositsa Yakimova
  Large area buffer-free graphene on non-polar (001) cubic silicon carbide
  Carbon, 2014, 80, 823-829.
 Web of Science® Times Cited: 6

Valdas Jokubavicius, G. Reza Yazdi, Rickard Liljedahl, Ivan Gueorguiev Ivanov, Rositsa Yakimova and Mikael Syväjärvi
  Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates
  Crystal Growth & Design, 2014, 14(12), 6514-6520.
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 Web of Science® Times Cited: 8

Ivan Gueorguiev Ivanov, Jawad Ul Hassan, Tihomir Iakimov, Alexei A. Zakharov, Rositsa Yakimova and Erik Janzén
  Layer-number determination in graphene on SiC by reflectance mapping
  Carbon, 2014, 77, 492-500.
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 Web of Science® Times Cited: 21

Z. N. Urgessa, J. R. Botha, Martin O. Eriksson, C. M. Mbulanga, S. R. Dobson, S. R. Tankio Djiokap, K. Fredrik Karlsson, Volodymyr Khranovskyy, Rositsa Yakimova and Per-Olof Holtz
  Low temperature near band edge recombination dynamics in ZnO nanorods
  Journal of Applied Physics, 2014, 116(12), 123506.
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 Web of Science® Times Cited: 15

Rositsa Yakimova, Tihomir Iakimov, Gholamreza Yazdi, Chamseddine Bouhafs, J. Eriksson, A. Zakharov, A. Boosalis, M. Schubert and Vanya Darakchieva
  Morphological and electronic properties of epitaxial graphene on SiC
  Physica. B, Condensed matter, 2014, 439, 54-59.
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 Web of Science® Times Cited: 10

Pawel Kwasnicki, Valdas Jokubavicius, Jianwu Sun, H. Peyre, Rositsa Yakimova, Mikael Syväjärvi, J. Camasse and S. Juillaguet
  Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
  Materials Science Forum, 2014, 778-780, 243-246.

Volodymyr Khranovskyy, M.O. Eriksson, György Zoltán Radnóczi, A. Khalid, H. Zhang, Per-Olof Holtz, Lars Hultman and Rositsa Yakimova
  Photoluminescence study of basal plane stacking faults in ZnO nanowires
  Physica. B, Condensed matter, 2014, 439, 50-53.
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 Web of Science® Times Cited: 7

Samir Mammadov, Juergen Ristein, Roland J. Koch, Markus Ostler, Christian Raidel, Martina Wanke, Remigijus Vasiliauskas, Rositsa Yakimova and Thomas Seyller
  Polarization doping of graphene on silicon carbide
  2D MATERIALS, 2014, 1(3), 035003.
 Web of Science® Times Cited: 27

Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, E. K. Polychroniadis and Risitza Yakimova
  Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
  Journal of Crystal Growth, 2014, 395, 109-115.
 Web of Science® Times Cited: 1

Cassandra Chua, Malcolm Connolly, Arseniy Lartsev, Tom Yager, Samuel Lara-Avila, Sergey Kubatkin, Sergey Kopylov, Vladimir Falko, Rositsa Yakimova, Ruth Pearce, T.J. B. M. Janssen, Alexander Tzaenchuk and Charles G. Smith
  Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
  Nano letters (Print), 2014, 14(6), 3369-3373.
 Web of Science® Times Cited: 23

Arseniy Lartsev, Tom Yager, Tobias Bergsten, Alexander Tzalenchuk, T. J. B. M. Janssen, Rositsa Yakimova, Samuel Lara-Avila and Sergey Kubatkin
  Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
  Applied Physics Letters, 2014, 105(6), 063106.
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 Web of Science® Times Cited: 15

Vishal Panchal, Arseniy Lartsev, Alessandra Manzin, Rositsa Yakimova, Alexander Tzalenchuk and Olga Kazakova
  Visualisation of edge effects in side-gated graphene nanodevices
  Scientific Reports, 2014, 4(5881), .
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 Web of Science® Times Cited: 18

Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching
  OPTICAL MATERIALS EXPRESS, 2013, 3(1), 86-94.
 Web of Science® Times Cited: 7

Rositsa Yakimova, Gholamreza Yazdi, Tihomir Iakimov, Jens Eriksson and Vanya Darakchieva
  Challenges of Graphene Growth on Silicon Carbide
  ECS Transactions, 2013, 53(1), 9-16.
 Web of Science® Times Cited: 1

Volodymyr Khranovskyy, Alexey M. Glushenkov, Y Chen, A Khalid, H Zhang, Lars Hultman, Bo Monemar and Rositsa Yakimova
  Crystal phase engineered quantum wells in ZnO nanowires
  Nanotechnology, 2013, 24(21), .
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 Web of Science® Times Cited: 11

Chao Xia, Somsakul Watcharinyanon, A A. Zakharov, Leif I. Johansson, Rositsa Yakimova and Chariya Virojanadara
  Detailed studies of Na intercalation on furnace-grown graphene on 6H-SiC(0001)
  Surface Science, 2013, 613, 88-94.
 Web of Science® Times Cited: 19

Sajjad Hussain, Yaqoob Khan, Volodymyr Khranovskyy, Riaz Muhammad and Rositsa Yakimova
  Effect of oxygen content on the structural and optical properties of ZnO films grown by atmospheric pressure MOCVD
  Progress in Natural Science, 2013, 23(1), 44-50.
 Web of Science® Times Cited: 9

I Shtepliuk, Volodymyr Khranovskyy, G Lashkarev, V. Khomyak, V Lazorenko, A Ievtushenko, Mikael Syväjärvi, Valdas Jokubavicius and Rositsa Yakimova
  Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
  Solid-State Electronics, 2013, 81, 72-77.
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 Web of Science® Times Cited: 20

A M R Baker, J A Alexander-Webber, T Altebaeumer, S D. McMullan, T J B M Janssen, A Tzalenchuk, S Lara-Avila, S Kubatkin, Rositsa Yakimova, C-T Lin, L-J Li and R J. Nicholas
  Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
  Physical Review B. Condensed Matter and Materials Physics, 2013, 87(4), 045414.
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 Web of Science® Times Cited: 32

O Kazakova, T L. Burnett, J Patten, L Yang and Rositsa Yakimova
  Epitaxial graphene on SiC(000(1)over-bar): functional electrical microscopy studies and effect of atmosphere
  Nanotechnology, 2013, 24(21), .
 Web of Science® Times Cited: 17

Vishal Panchal, David Cox, Rositsa Yakimova and Olga Kazakova
  Epitaxial Graphene Sensors for Detection of Small Magnetic Moments
  IEEE transactions on magnetics, 2013, 49(1), 97-100.
 Web of Science® Times Cited: 7

Tom Yager, Arseniy Lartsev, Sumedh Mahashabde, Sophie Charpentier, Dejan Davidovikj, Andrey Danilov, Rositza Yakimova, Vishal Panchal, Olga Kazakova, Alexander Tzalenchuk, Samuel Lara-Avila and Sergey Kubatkin
  Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport
  Nano letters (Print), 2013, 13(9), 4217-4223.
 Web of Science® Times Cited: 34

Gholamreza Yazdi, Remigijus Vasiliauskas, Tihomir Iakimov, Alexei Zakharov, Mikael Syväjärvi and Rositsa Yakimova
  Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
  Carbon, 2013, 57, 477-484.
 Web of Science® Times Cited: 42

Leif Johansson, Chao Xia, Jawad ul Hassan, Tihomir Iakimov, Alexei A. Zarharov, Somsakul Watcharinyanon, Rositza Yakimova, Erik Janzén and Chariya Virojanadara
  Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
  Crystals, 2013, 3(1), 1-13.
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 Web of Science® Times Cited: 5

Federico Mazzola, Justin W. Wells, Rositsa Yakimova, Soren Ulstrup, Jill A. Miwa, Richard Balog, Marco Bianchi, Mats Leandersson, Johan Adell, Philip Hofmann and T Balasubramanian
  Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling
  Physical Review Letters, 2013, 111(21), 216806.
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 Web of Science® Times Cited: 16

Vanya Darakchieva, A. Boosalis, A. A. Zakharov, T. Hofmann, M. Schubert, T. E. Tiwald, Tihomir Iakimov, Remigijus Vasiliauskas and Rositsa Yakimova
  Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
  Applied Physics Letters, 2013, 102(21), 213116.
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 Web of Science® Times Cited: 13

C Drexler, S A. Tarasenko, P Olbrich, J Karch, M Hirmer, F Mueller, M Gmitra, J Fabian, Rositsa Yakimova, S Lara-Avila, S Kubatkin, M Wang, R Vajtai, P M Ajayan, J Kono and S D. Ganichev
  Magnetic quantum ratchet effect in graphene
  Nature Nanotechnology, 2013, 8(2), 104-107.
 Web of Science® Times Cited: 51

Vishal Panchal, Oscar Iglesias-Freire, Arseniy Lartsev, Rositsa Yakimova, Agustina Asenjo and Olga Kazakova
  Magnetic Scanning Probe Calibration Using Graphene Hall Sensor
  IEEE transactions on magnetics, 2013, 49(7), 3520-3523.
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 Web of Science® Times Cited: 12

P. Vasek, L. Smrcka, P. Svoboda, M. Ledinsky, V. Jurka, M. Orlita, D. K. Maude, W. Strupinski, R. Stepniewski and Rositsa Yakimova
  Magnetotransport in graphene on silicon side of SiC
  Journal of Physics, Conference Series, 2013, 456(1), 012038.
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I. Shtepliuka, Volodymyr Khranovskyy, G. Lashkarev, V. Khomyak, A. Ievtushenko, V. Tkach, V. Lazorenko, I. Timofeeva and Rositsa Yakimova
  Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method
  Applied Surface Science, 2013, 276, 550-557.
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 Web of Science® Times Cited: 26

Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
  Materials Science Forum, 2013, 740-742, 19-22.

L Hao, J Gallop, S Goniszewski, O Shaforost, N Klein and Rositsa Yakimova
  Non-contact method for measurement of the microwave conductivity of graphene
  Applied Physics Letters, 2013, 103(12), .
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 Web of Science® Times Cited: 26

Ruth Pearce, Jens Eriksson, Tihomir Iakimov, Lars Hultman, Anita Lloyd Spetz and Rositza Yakimova
  On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy
  ACS Nano, 2013, 7(5), 4647-4656.
 Web of Science® Times Cited: 16

V Eless, T Yager, S Spasov, S Lara-Avila, Rositsa Yakimova, S Kubatkin, T J B M. Janssen, A Tzalenchuk and V Antonov
  Phase coherence and energy relaxation in epitaxial graphene under microwave radiation
  Applied Physics Letters, 2013, 103(9), .
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 Web of Science® Times Cited: 5

J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A Tzalenchuk, S Lara-Avila, S Kubatkin, Rositsa Yakimova, B A. Piot, D K. Maude and R J. Nicholas
  Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
  Physical Review Letters, 2013, 111(9), e096601.
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 Web of Science® Times Cited: 27

P Kuehne, Vanya Darakchieva, Rositsa Yakimova, J D. Tedesco, R L. Myers-Ward, C R. Jr Eddy, D K. Gaskill, C M. Herzinger, J A. Woollam, M Schubert and T Hofmann
  Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect
  Physical Review Letters, 2013, 111(7), e077402.
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 Web of Science® Times Cited: 10

P. Olbrich, C. Drexler, L. E. Golub, S. N. Danilov, V. A. Shalygin, Rositsa Yakimova, S. Lara-Avila, S. Kubatkin, B. Redlich, R. Huber and S. D. Ganichev
  Reststrahl band-assisted photocurrents in epitaxial graphene layers
  Physical Review B. Condensed Matter and Materials Physics, 2013, 88(24), 245425.
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 Web of Science® Times Cited: 9

Vishal Panchal, Ruth Pearce, Rositsa Yakimova, Alexander Tzalenchuk and Olga Kazakova
  Standardization of surface potential measurements of graphene domains
  Scientific Reports, 2013, 3, .
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 Web of Science® Times Cited: 80

Jens Eriksson, Donatella Puglisi, Remigijus Vasiliauskas, Anita Lloyd Spetz and Rositsa Yakimova
  Thickness uniformity and electron doping in epitaxial graphene on SiC
  Materials Science Forum, 2013, 740-742, 153-156.
 Web of Science® Times Cited: 1

Yiyu Ou, Valdas Jokubavicius, Philip Hens, Michl Kaiser, Peter Wellmann, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
  Optics Express, 2012, 20(7), 7575-7579.
 Web of Science® Times Cited: 14

Yiyu Ou, Valdas Jokubavicius, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC
  Physica Scripta, 2012, T148, 014003.
 Web of Science® Times Cited: 1

Jianwu W. Sun, Volodymyr Khranovskyy, M. Mexis, Martin Eriksson, Mikael Syväjärvi, I. Tsiaoussis, Gholamreza Yazdi, H. Peyre, S. Juillaguet, J. Camassel, Per-Olof Holtz, Peder Bergman, Lars Hultman and Rositsa Yakimova
  Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC
  Journal of Luminescence, 2012, 132(1), 122-127.
 Web of Science® Times Cited: 1

Volodymyr Khranovskyy, Rositsa Yakimova, Fredrik Karlsson, Abdul S Syed, Per-Olof Holtz, Zelalem Nigussa Urgessa, Oluwatobi Samuel Oluwafemi and Johannes Reinhardt Botha
  Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques
  Physica. B, Condensed matter, 2012, 407(10), 1538-1542.
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 Web of Science® Times Cited: 15

Jianwu Sun, Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Considerably long carrier lifetimes in high-quality 3C-SiC(111)
  Applied Physics Letters, 2012, 100(25), 252101.
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 Web of Science® Times Cited: 17

Remigijus Vasiliauskas, Sandrine Juillaguer, Mikael Syväjärvi and Risitza Yakimova
  Cubic SiC formation on the C-face of 6H-SiC (0001) substrates
  Journal of Crystal Growth, 2012, 348(1), 91-96.
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 Web of Science® Times Cited: 11

Bogdan Ranguelov, Desislava Goranova, Vesselin Tonchev and Rositsa Yakimova
  Diffusion Limited Aggregation with modified local rules
  Comptes Rendus de l'Academie Bulgare des Sciences / Proceedings of the Bulgarian Academy of Sciences, 2012, 65(7), 913-918.
 Web of Science® Times Cited: 1

Mi Zhou, Frank L Pasquale, Peter A Dowben, Alex Boosalis, Mathias Schubert, Vanya Darakchieva, Rositsa Yakimova, Lingmei Kong and Jeffry A Kelber
  Direct graphene growth on Co3O4(111) by molecular beam epitaxy
  Journal of Physics: Condensed Matter, 2012, 24(7), 072201.
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 Web of Science® Times Cited: 20

S. Sonde, C. Vecchio, F. Giannazzo, Rositsa Yakimova and E. Rimini
  Effect of graphene/4H-SiC(0 0 0 1) interface on electrostatic properties in graphene
  Physica. E, Low-Dimensional systems and nanostructures, 2012, 44(6), 993-996.

Valdas Jokubavicius, P. Hens, Richard Liljedahl, Jianwu Sun, M. Kaiser, P. Wellmann, S. Sano, Rositza Yakimova, S. Kamiyama and Mikael Syväjärvi
  Effects of source material on epitaxial growth of fluorescent SiC
  Thin Solid Films, 2012, 522, 7-10.
 Web of Science® Times Cited: 4

F Giannazzo, I Deretzis, A La Magna, F Roccaforte and Rositsa Yakimova
  Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
  Physical Review B. Condensed Matter and Materials Physics, 2012, 86(23), .
 Web of Science® Times Cited: 45

Jianwu Sun, Satoshi Kamiyama, Valdas Jokubavicius, H. Peyre, Rositsa Yakimova, S. Juillaguet and Mikael Syväjärvi
  Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
  Journal of Physics D: Applied Physics, 2012, 45(23), 235107.
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 Web of Science® Times Cited: 6

Tim L Burnett, Rositsa Yakimova and Olga Kazakova
  Identification of epitaxial graphene domains and adsorbed species in ambient conditions using quantified topography measurements
  Journal of Applied Physics, 2012, 112(5), 054308.
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 Web of Science® Times Cited: 18

Remigijus Vasiliauskas, A. Mekys, P. Malinovskis, Sandrine Juillaguer, Mikael Syväjärvi, J. Storasta and Risitza Yakimova
  Impact of extended defects on Hall and magnetoresistivity effects in cubic silicon carbide
  Journal of Physics D: Applied Physics, 2012, 45(22), 225102.
 Web of Science® Times Cited: 4

Remigijus Vasiliauskas, A. Mekys, P. Malinovskis, Mikael Syväjärvi, J. Storasta and Rositza Yakimova
  Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC
  Materials letters (General ed.), 2012, 74, 203-205.
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 Web of Science® Times Cited: 7

Thomas Maassen, J Jasper van den Berg, Natasja IJbema, Felix Fromm, Thomas Seyller, Rositsa Yakimova and Bart J van Wees
  Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)
  Nano letters (Print), 2012, 12(3), 1498-1502.
 Web of Science® Times Cited: 74

Volodymyr Khranovskyy, V Lazorenko, G Lashkarev and Rositsa Yakimova
  Luminescence anisotropy of ZnO microrods
  Journal of Luminescence, 2012, 132(10), 2643-2647.
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 Web of Science® Times Cited: 28

Volodymyr Khranovskyy and Rositsa Yakimova
  Morphology engineering of ZnO nanostructures
  Physica. B, Condensed matter, 2012, 407(10), 1533-1537.
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 Web of Science® Times Cited: 22

Remigijus Vasiliauskas, Maya Marinova, Philip Hens, Peter Wellmann, Mikael Syväjärvi and Rositsa Yakimova
  Nucleation Control of Cubic Silicon Carbide on 6H- Substrates
  Crystal Growth & Design, 2012, 12(1), 197-204.
 Web of Science® Times Cited: 16

Yiyu Ou, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures
  Optics Letters, 2012, 37(18), 3816-3818.
 Web of Science® Times Cited: 8

T J B M Janssen, J M Williams, N E Fletcher, R Goebel, A Tzalenchuk, Rositsa Yakimova, S Lara-Avila, S Kubatkin and V I Falko
  Precision comparison of the quantum Hall effect in graphene and gallium arsenide
  Metrologia, 2012, 49(3), 294-306.
 Web of Science® Times Cited: 38

Jianwu Sun, Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama and Mikael Syväjärvi
  Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
  Thin Solid Films, 2012, 522, 33-35.
 Web of Science® Times Cited: 4

Jianwu Sun, T. Robert, A. Andreadou, A. Mantzari, Valdas Jokubavicius, Rositsa Yakimova, J. Camassel, S. Juillaguet, E. K. Polychroniadis and Mikael Syväjärvi
  Shockley-Frank stacking faults in 6H-SiC
  Journal of Applied Physics, 2012, 111, 113527.
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 Web of Science® Times Cited: 5

Chao Xia, Somsakul Watcharinyanon, A A Zakharov, Rositsa Yakimova, Lars Hultman, Leif I Johansson and Chariya Virojanadara
  Si intercalation/deintercalation of graphene on 6H-SiC(0001)
  Physical Review B. Condensed Matter and Materials Physics, 2012, 85(4), 045418.
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 Web of Science® Times Cited: 69

V Panchal, K Cedergren, Rositsa Yakimova, A Tzalenchuk, S Kubatkin and O Kazakova
  Small epitaxial graphene devices for magnetosensing applications
  Journal of Applied Physics, 2012, 111(7), 07E509.
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 Web of Science® Times Cited: 31

Milena Beshkova, Jens Birch, Mikael Syväjärvi and Rositsa Yakimova
  Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
  Vacuum, 2012, 86(10), 1595-1599.
 Web of Science® Times Cited: 2

Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, G Wagner, Rositsa Yakimova, P Wellmann and Mikael Syväjärvi
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  Materials letters (General ed.), 2012, 67(1), 300-302.
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 Web of Science® Times Cited: 11

Volodymyr Khranovskyy, Tobias Ekblad, Rositsa Yakimova and Lars Hultman
  Surface morphology effects on the light-controlled wettability of ZnO nanostructures
  Applied Surface Science, 2012, 258(20), 8146-8152.
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 Web of Science® Times Cited: 52

Jens Eriksson, Ruth Pearce, Tihomir Iakimov, Chariya Virojanadara, Daniela Gogova, Mike Andersson, Mikael Syväjärvi, Anita Lloyd Spetz and Rositza Yakimova
  The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
  Applied Physics Letters, 2012, 100(24), 241607.
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 Web of Science® Times Cited: 30

A. Boosalis, T. Hofmann, Vanya Darakchieva, Rositsa Yakimova and M. Schubert
  Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry
  Applied Physics Letters, 2012, 101(1), .
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 Web of Science® Times Cited: 23

A M R Baker, J A Alexander-Webber, T Altebaeumer, T J B M Janssen, A Tzalenchuk, S Lara-Avila, S Kubatkin, Rositsa Yakimova, C-T Lin, L-J Li and R J Nicholas
  Weak localization scattering lengths in epitaxial, and CVD graphene
  Physical Review B. Condensed Matter and Materials Physics, 2012, 86(23), 235441.
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 Web of Science® Times Cited: 41

Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Rositsa Yakimova and Mikael Syväjärvi
  White light-emitting diode based on fluorescent SiC
  Thin Solid Films, 2012, 522, 23-25.
 Web of Science® Times Cited: 10

Rositza Yakimova, Linnea Selegård, Volodymyr Khranovskyy, Ruth Pearce, Anita Lloyd Spetz and Kajsa Uvdal
  ZnO materials and surface tailoring for biosensing
  Frontiers in bioscience (Elite edition), 2012, 4(1), 254-278.
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T J B M Janssen, A Tzalenchuk, Rositsa Yakimova, S Kubatkin, S Lara-Avila, S Kopylov and V I Falko
  Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
  PHYSICAL REVIEW B, 2011, 83(23), 233402.
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 Web of Science® Times Cited: 65

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini and V Raineri
  Correction: Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas (vol 97, 132101, 2010)
  Applied Physics Letters, 2011, 98(6), 069902.

Samuel Lara-Avila, Alexander Tzalenchuk, Sergey Kubatkin, Rositsa Yakimova, T J B M Janssen, Karin Cedergren, Tobias Bergsten and Vladimir Falco
  Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements
  Physical Review Letters, 2011, 107(16), 166602.
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 Web of Science® Times Cited: 53

Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Donor-acceptor-pair emission characterization in N-B doped fluorescent in SiC
  Optical Materials Express, 2011, 1(8), 1439-1446.
 Web of Science® Times Cited: 29

Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, Rickard Liljedahl, G. Zoulis, J. Lorenzzi, G. Ferro, S. Juillaguet, J. Camassel, E. K. Polychroniadis and Rositsa Yakimova
  Effect of initial substrate conditions on growth of cubic silicon carbide
  Journal of Crystal Growth, 2011, 324(1), 7-14.
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 Web of Science® Times Cited: 29

Alexander Tzalenchuk, Samuel Lara-Avila, Karin Cedergren, Mikael Syväjärvi, Rositsa Yakimova, Olga Kazakova, T J B M Janssen, Kasper Moth-Poulsen, Thomas Bjornholm, Sergey Kopylov, Vladimir Falko and Sergey Kubatkin
  Engineering and metrology of epitaxial graphene
  Solid State Communications, 2011, 151(16), 1094-1099.
 Web of Science® Times Cited: 14

Ruth Pearce, Tihomir Iakimov, Mike Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova
  Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection
  Sensors and actuators. B, Chemical, 2011, 155(2), 451-455.
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 Web of Science® Times Cited: 155

Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Mikael Syväjärvi and Rositsa Yakimova
  Fluorescent SiC and its application to white light-emitting diodes
  Journal of semiconductors, 2011, 32(1), 013004-1-013004-3.

Valdas Jokubavicius, Richard Liljedahl, Yiyu Ou, Haiyan Ou, Satoshi Kamiyama, Rositza Yakimova and Mikael Syväjärvi
  Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
  Materials Science Forum, 2011, 679-680, 103-106.
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 Web of Science® Times Cited: 5

T J B M Janssen, N E Fletcher, R Goebel, J M Williams, A Tzalenchuk, Rositsa Yakimova, S Kubatkin, S Lara-Avila and V I Falko
  Graphene, universality of the quantum Hall effect and redefinition of the SI system
  New Journal of Physics, 2011, 13(9), 093026.
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 Web of Science® Times Cited: 42

Chongyun Jiang, V A Shalygin, V Yu Panevin, S N Danilov, M M Glazov, Rositsa Yakimova, S Lara-Avila, S Kubatkin and S D Ganichev
  Helicity-dependent photocurrents in graphene layers excited by midinfrared radiation of a CO(2) laser
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(12), 125429.
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 Web of Science® Times Cited: 44

Somsakul Watcharinyanon, Chariya Virojanadara, Jacek Osiecki, A A Zakharov, Rositsa Yakimova, Roger Uhrberg and Leif I Johansson
  Hydrogen intercalation of graphene grown on 6H-SiC(0001)
  Surface Science, 2011, 605(17-18), 1662-1668.
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 Web of Science® Times Cited: 58

Tim Burnett, Rositsa Yakimova and Olga Kazakova
  Mapping of Local Electrical Properties in Epitaxial Graphene Using Electrostatic Force Microscopy
  NANO LETTERS, 2011, 11(6), 2324-2328.
 Web of Science® Times Cited: 58

A. A Zakharov, Chariya Virojanadara, Somsakul Watcharinyanon, Rositsa Yakimova and Leif Johansson
  Nano-scale 3D (E,kx,ky) band structure imaging on graphene and intercalated graphene
  IBM Journal of Research and Development, 2011, 55(4), 6:1-6:6.
 Web of Science® Times Cited: 4

Carmelo Vecchio, Sushant Sonde, Corrado Bongiorno, Martin Rambach, Rositsa Yakimova, Vito Raineri and Filippo Giannazzo
  Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
  NANOSCALE RESEARCH LETTERS, 2011, 6(1), .
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 Web of Science® Times Cited: 27

Samuel Lara-Avila, Kasper Moth-Poulsen, Rositsa Yakimova, Thomas Bjornholm, Vladimir Falko, Alexander Tzalenchuk and Sergey Kubatkin
  Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
  ADVANCED MATERIALS, 2011, 23(7), 878-+.
 Web of Science® Times Cited: 86

Volodymyr Khranovskyy, I Tsiaoussis, Lars Hultman and Rositsa Yakimova
  Selective homoepitaxial growth and luminescent properties of ZnO nanopillars
  NANOTECHNOLOGY, 2011, 22(18), 185603.
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 Web of Science® Times Cited: 15

Leif I Johansson, Somsakul Watcharinyanon, A A Zakharov, Tihomir Iakimov, Rositsa Yakimova and Chariya Virojanadara
  Stacking of adjacent graphene layers grown on C-face SiC
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(12), 125405.
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 Web of Science® Times Cited: 47

I Tsiaoussis, Volodymyr Khranovskyy, G P Dimitrakopulos, J Stoemenos, Rositsa Yakimova and B Pecz
  Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates
  JOURNAL OF APPLIED PHYSICS, 2011, 109(4), 043507.
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 Web of Science® Times Cited: 6

J Karch, C Drexler, P Olbrich, M Fehrenbacher, M Hirmer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, B Birkner, J Eroms, D Weiss, Rositsa Yakimova, S Lara-Avila, S Kubatkin, M Ostler, T Seyller and S. D. Ganichev
  Terahertz Radiation Driven Chiral Edge Currents in Graphene
  Physical Review Letters, 2011, 107(27), 276601-1-276601-5.
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 Web of Science® Times Cited: 59

Chariya Virojanadara, A A Zakharov, Somsakul Watcharinyanon, Rositsa Yakimova and Leif I Johansson
  A low-energy electron microscopy and x-ray photo-emission electron microscopy study of Li intercalated into graphene on SiC(0001)
  NEW JOURNAL OF PHYSICS, 2010, 12(125015), .
 Web of Science® Times Cited: 27

Linnéa Selegård, Volodymyr Khranovskyy, Fredrik Söderlind, Cecilia Vahlberg, Maria Ahrén, Per-Olov Käll, Rositsa Yakimova and Kajsa Uvdal
  Biotinylation of ZnO Nanoparticles and Thin Films: A Two-Step Surface Functionalization Study
  ACS APPLIED MATERIALS and INTERFACES, 2010, 2(7), 2128-2135.
 Web of Science® Times Cited: 24

Chariya Virojanadara, A A Zakharov, Rositsa Yakimova and Leif I Johansson
  Buffer layer free large area bi-layer graphene on SiC(0001)
  SURFACE SCIENCE, 2010, 604(2), L4-L7.
 Web of Science® Times Cited: 56

J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M.M. Glazov, S.A. Tarasenko, E.L. Ivchenko, D. Weiss, J. Eroms, Rositsa Yakimova, S. Lara-Avila, S. Kubatkin and S.D. Ganichev
  Dynamic Hall Effect Driven by Circularly Polarized Light in a Graphene Layer
  Physical Review Letters, 2010, 105(22), 227402.
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 Web of Science® Times Cited: 84

Volodymyr Khranovskyy, I Tsiaoussis, Gholamreza Yazdi, Lars Hultman and Rositsa Yakimova
  Heteroepitaxial ZnO nano hexagons on p-type SiC
  JOURNAL OF CRYSTAL GROWTH, 2010, 312(2), 327-332.
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 Web of Science® Times Cited: 22

D. Gogova, D. Siche, A. Kwasniewski, M. Schmidbauer, R. Fornari, Carl Hemmingsson, Rositsa Yakimova and Bo Monemar
  HVPE GaN substrates: growth and characterization
  Physica Status Solidi. C, Current topics in solid state physics, 2010, 7(7-8), 1756-1759.
 Web of Science® Times Cited: 2

Chariya Virojanadara, Rositsa Yakimova, A A Zakharov and Leif Johansson
  Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination
  JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43(37), 374010.
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 Web of Science® Times Cited: 43

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini and V Raineri
  Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas
  APPLIED PHYSICS LETTERS, 2010, 97(13), 132101.
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 Web of Science® Times Cited: 40

Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositsa Yakimova, Olga Kazakova, T J B M Janssen, Vladimir Falko and Sergey Kubatkin
  Towards a quantum resistance standard based on epitaxial graphene
  NATURE NANOTECHNOLOGY, 2010, 5(3), 186-189.
 Web of Science® Times Cited: 242

Gholamreza Yazdi, Per Persson, D Gogova, Lars Hultman, Mikael Syväjärvi and Rositsa Yakimova
  Aligned AlN nanowires by self-organized vapor-solid growth
  NANOTECHNOLOGY, 2009, 20(49), 495304.
 Web of Science® Times Cited: 19

Volodymyr Khranovskyy, Jens Eriksson, Anita Lloyd Spetz, Rositsa Yakimova and Lars Hultman
  Effect of oxygen exposure on the electrical conductivity and gas sensitivity of nanostructured ZnO films
  Thin Solid Films, 2009, 517(6), 2073-2078.
 Web of Science® Times Cited: 45

S Sonde, F Giannazzo, V Raineri, Rositsa Yakimova, J -R Huntzinger, A Tiberj and J Camassel
  Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy
  PHYSICAL REVIEW B, 2009, 80(24), 241406.
 Web of Science® Times Cited: 65

V A Karpyna, A A Evtukh, M O Semenenko, V I Lazorenko, G V Lashkarev, Volodymyr Khranovskyy, Rositsa Yakimova and D A Fedorchenko
  Electron field emission from ZnO self-organized nanostructures and doped ZnO: Ga nanostructured films
  Microelectronics Journal, 2009, 40(2), 229-231.
 Web of Science® Times Cited: 14

Gholamreza Yazdi, Manfred Beckers, Finn Giuliani, Mikael Syväjärvi, Lars Hultman and Rositsa Yakimova
  Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates
  APPLIED PHYSICS LETTERS, 2009, 94(8), 082109.
 Web of Science® Times Cited: 10

D Gogova, M Albrecht, T Remmele, K Irmscher, D Siche, H-J Rost, M Schmidbauer, R Fornari and Rositsa Yakimova
  Microscopic lateral overgrowth by physical vapour transport of GaN on self-organized diamond-like carbon masks
  CRYSTAL RESEARCH AND TECHNOLOGY, 2009, 44(10), 1078-1082.

Volodymyr Khranovskyy, I Tsiaoussis, Arvid Larsson, Per-Olof Holtz and Rositsa Yakimova
  Nanointegration of ZnO with Si and SiC
  PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4359-4363.
 Web of Science® Times Cited: 5

T. Bohnen, Gholamreza Yazdi, Rositsa Yakimova, G W G van Dreumel, P R Hageman, E. Vlieg, R E Algra, M A Verheijen and J H Edgar
  ScAlN nanowires: A cathodoluminescence study
  JOURNAL OF CRYSTAL GROWTH, 2009, 311(11), 3147-3151.
 Web of Science® Times Cited: 12

V I Sankin, P P Shkrebiy and Rositsa Yakimova
  Strong field hole transport in 6H-SiC
  APPLIED PHYSICS LETTERS, 2009, 94(8), 082101.
 Web of Science® Times Cited: 1

Chariya Virojanadara, Rositsa Yakimova, Jacek Osiecki, Mikael Syväjärvi, Roger Uhrberg, Leif Johansson and A A Zakharov
  Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)
  Surface Science, 2009, 603(15), L87-L90.
 Web of Science® Times Cited: 51

Jens Eriksson, Volodymyr Khranovskyy, Fredrik Söderlind, Per-Olov Käll, Rositsa Yakimova and Anita Lloyd-Spets
  ZnO nanoparticles or ZnO films: A comparison of the gas sensing capabilities
  Sensors and actuators. B, Chemical, 2009, 137(1), 94-102.
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 Web of Science® Times Cited: 61

Gholamreza Yazdi, Remigijus Vasiliauskas, Mikael Syväjärvi and Rositsa Yakimova
  Fabrication of free-standing AlN crystals by controlled microrod growth
  Journal of Crystal Growth, 2008, 300(5), 935-939 .
 Web of Science® Times Cited: 3

Volodymyr Khranovskyy, Gholamreza Yazdi, Arvid Larsson, S Hussain, Per-Olof Holtz and Rositsa Yakimova
  Growth and characterization of ZnO nanostructured material
  Journal of Optoelectronics and Advanced Materials, 2008, 10(11), 2969-2975.

A.A. Lebedev, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nelson, G.A. Oganesyan, A.S. Tregubova and Rositsa Yakimova
  Highly doped p-type 3C-SiC on 6H-SiC substrates
  Semiconductor Science and Technology, 2008, 23(7), .
 Web of Science® Times Cited: 12

Chariya Virojanadara, Mikael Syväjärvi, Rositsa Yakimova, Leif Johansson, A A Zakharov and T Balasubramanian
  Homogeneous large-area graphene layer growth on 6H-SiC(0001)
  Physical Review B. Condensed Matter and Materials Physics, 2008, 78(24), 245403.
 Web of Science® Times Cited: 325

Volodymyr Khranovskyy, Gholamreza Yazdi, G. Lashkarev, A. Ulyashin and Rositsa Yakimova
  Investigation of ZnO as a perspective material for photonics
  Physica Status Solidi (a) applications and materials science, 2008, 205(1), 144-149.
 Web of Science® Times Cited: 24

A.A. Shiryaev, M. Wiedenbeck, V. Reutsky, V.B. Polyakov, N.N. Mel’nik, A.A. Lebedev and Rositsa Yakimova
  Isotopic heterogeneity in synthetic and natural silicon carbide
  Journal of Physics and Chemistry of Solids, 2008, 69(10), 2492-2498.
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 Web of Science® Times Cited: 4

V. Khranovskyy, A. Ulyashin, G. Lashkarev, B.G. Svensson and Rositsa Yakimova
  Morphology, electrical and optical properties of undoped ZnO layers deposited on silicon substrates by PEMOCVD
  Thin Solid Films, 2008, 516(7), 1396-1400.
 Web of Science® Times Cited: 22

R. Fornari, Rojo J. Carlos and Rositsa Yakimova
  Preface
  Journal of Crystal Growth, 2008, 310(5), 875-875.

A Ievtushenko, G Lashkarev, V Lazorenko, V Karpyna, V Sichkovskyi, L Kosyachenko, V Sklyarchuk, O Sklyarchuk, V Bosy, F Korzhinski, A Ulyashin, Volodymyr Khranovskyy and Rositsa Yakimova
  Ultraviolet Detectors Based on ZnO: N Thin Films with Different Contact Structures
  Acta Physica Polonica. A, 2008, 114(5), 1123-1129.
 Web of Science® Times Cited: 11

V. Tonchev and Rositsa Yakimova
  A model of far from equilibrium growth
  Khimiya = Chemistry : Bulgarian journal of chemical education, 2007, 67, 15.

Alexander Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel¿son, B.S. Razbirin, M.P. Shcheglov, A.S. Tregubova, Mikael Syväjärvi and Rositsa Yakimova
  A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
  Semiconductors (Woodbury, N.Y.), 2007, 41(3), 263-265.
 Web of Science® Times Cited: 18

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Aligned AlN nanowires and microrods by self-patterning
  Applied Physics Letters, 2007, 90(12), 123103.
 Web of Science® Times Cited: 11

V. Khranovskyy, U. Grossner, L.I. Kopylova, V. Lazorenko, A.T. Budnikov, G.V. Lashkarev, B.G. Svensson and Rositsa Yakimova
  Conductivity increase of ZnO: Ga films by rapid thermal annealing
  Superlattices and Microstructures, 2007, 42( 1-6), 379-386.
 Web of Science® Times Cited: 29

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Formation of needle-like and columnar structures of AlN
  Journal of Crystal Growth, 2007, 300(1), 130-135 .
 Web of Science® Times Cited: 10

V. Khranovskyy, R. Minikayev, S. Trushkin, G. Lashkarev, V. Lazorenko, U. Grossner, W. Paszkowicz, A. Suchocki, B.G. Svensson and Rositsa Yakimova
  Improvement of ZnO thin film properties by application of ZnO buffer layers
  Journal of Crystal Growth, 2007, 308(1), 93-98.
 Web of Science® Times Cited: 29

D.J. Ewing, L.M. Porter, Qamar Ul Wahab, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
  Semiconductor Science and Technology, 2007, 22(12), 1287-1291.
 Web of Science® Times Cited: 13

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Yu. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, M.N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
  Magnetic resonance studies of defects in electron-irradiated ZnO substrates
  Physica. B, Condensed matter, 2007, 401-402, 507-510.
 Web of Science® Times Cited: 3

Rositsa Yakimova, Georg Steinhoff, Rodrigo Jr Petoral, Cecilia Vahlberg, Volodymyr Khranovskyy, Gholamreza Yazdi, Kajsa Uvdal and Anita Lloyd Spetz
  Novel material concepts of transducers for chemical and biosensors
  Biosensors & bioelectronics, 2007, 22(12), 2780-2785.
 Web of Science® Times Cited: 50

Rodrigo Jr Petoral, Gholamreza Yazdi, Anita Lloyd-Spets, Rositsa Yakimova and Kajsa Uvdal
  Organosilane-functionalized wide band gap semiconductor surfaces
  Applied Physics Letters, 2007, 90(22), .
 Web of Science® Times Cited: 29

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
  Recombination centers in as-grown and electron-irradiated ZnO substrates
  Journal of Applied Physics, 2007, 102(9), .
 Web of Science® Times Cited: 15

A.A. Lebedev, V.V. Zelenin, P.L. Abramov, S.P. Lebedev, A.N. Smirnov, L.M. Sorokin, M.P. Shcheglov and Rositsa Yakimova
  Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
  Technical physics letters, 2007, 33(6), 524-526.
 Web of Science® Times Cited: 7

Milena Beshkova, K. G. Grigorov, Z. Zakhariev, M. Abrashev, M. Massi and Rositsa Yakimova
  Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates
  Journal of Optoelectronics and Advanced Materials, 2007, 9(1), 213-216.

Rositsa Yakimova, Rodrigo Jr Petoral, Gholamreza Yazdi, Cecilia Vahlberg, Anita Lloyd Spetz and Kajsa Uvdal
  Surface functionalization and biomedical applications based on SiC
  Journal of Physics D: Applied Physics, 2007, 40(20), 6435-6442.
 Web of Science® Times Cited: 117

Rositsa Yakimova
  Developments in the growth of wide bandgap semiconductors
  Physica Scripta, 2006, T126, 121-126.
 Web of Science® Times Cited: 3

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Growth and morphology of AlN crystals
  Physica Scripta, 2006, T126, 127-130.
 Web of Science® Times Cited: 7

T. Kihlgren, T. Balasubramanian, L. Wallden and Rositsa Yakimova
  K/graphite: Uniform energy shifts of graphite valence states
  Surface Science, 2006, 600(5), 1160-1164.
 Web of Science® Times Cited: 9

Anita Lloyd-Spets, S. Nakagomi, Helena Wingbrant, Mike Andersson, Anette Salomonsson, S. Roy, G. Wingqvist, I. Katardjiev, M. Eickhoff, Kajsa Uvdal and Rositsa Yakimova
  New materials for chemical and biosensors
  Materials and Manufacturing Processes, 2006, 21(3), 253-256.
 Web of Science® Times Cited: 14

Rositsa Yakimova, Gholam Reza Yazdi, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Mikael Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov and B. Svensson
  Optical and Morphological Features of Bulk and Homoepitaxial ZnO
  Superlattices and Microstructures, 2006, 39, 247-256.
 Web of Science® Times Cited: 11

V. Khranovskyy, U. Grossner, G.V. Lashkarev, B.G. Svensson and Rositsa Yakimova
  PEMOCVD of ZnO thin films, doped by Ga and some of their properties
  Superlattices and Microstructures, 2006, 39( 1-4), 275-281.
 Web of Science® Times Cited: 57

M. Beshkova, Z. Zakhariev, M. V. Abrashev, Jens Birch, A. Postovit and Rositsa Yakimova
  Properties of AlN epitaxial layers on 6H-SiC substrate grown by sublimation in argon, nitrogen, and their mixtures
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2006, 129(1-3), 228-231.
 Web of Science® Times Cited: 2

V. Khranovskyy, U. Grossner, O. Nilsen, V. Lazorenko, G.V. Lashkarev, B.G. Svensson and Rositsa Yakimova
  Structural and morphological properties of ZnO: Ga thin films
  Thin Solid Films, 2006, 515(2 SPEC. ISS.), 472-476.
 Web of Science® Times Cited: 99

V. Khranovskyy, U. Grossner, V. Lazorenko, G. Lashkarev, B.G. Svensson and Rositsa Yakimova
  Study of annealing influence on electrical and morphological properties of ZnO: Ga thin films
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 3(4), 780784.
 Web of Science® Times Cited: 9

K. Neimontas, T. Malinauskas, R. Aleksiejunas, Rositsa Yakimova and K. Jarasiunas
  Temperature-dependent nonequilibrium carrier dynamics in epitaxial and bulk 4H-SiC
  Lithuanian journal of physics, 2006, 46, 199-204.

V.I. Sankin, P. P. Shkrebiy and Rositsa Yakimova
  Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates
  Applied Physics Letters, 2006, 89(23), 233508.
 Web of Science® Times Cited: 1

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
  Characterization of crack-free relaxed GaN grown on 2″ sapphire
  Journal of Applied Physics, 2005, 98(7), 73525.
 Web of Science® Times Cited: 4

Samuele Porro, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Electrical Analysis and Interface States Evaluation of of Ni Schottky diodes on 4H-SiC thick epilayers
  Physica Status Solidi (a) applications and materials science, 2005, 202(13), 2508-2514.
 Web of Science® Times Cited: 4

A Paskaleva, Rafal Ciechonski, Mikael Syväjärvi, E Atanassova and Rositsa Yakimova
  Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric
  Journal of Applied Physics, 2005, 97(12), 124507.
 Web of Science® Times Cited: 18

Rafal Ciechonski, Mikael Syväjärvi, Qamar Ul Wahab and Rositsa Yakimova
  Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy
  Solid-State Electronics, 2005, 49(12), 1917-1920.

Mikael Syväjärvi, Rafal R. Ciechonski, Gholamreza R. Yazdi and Rositsa Yakimova
  Fast epitaxy by PVT of SiC in hydrogen atmosphere
  Journal of Crystal Growth, 2005, 275(1-2), e1103-e1107 .
 Web of Science® Times Cited: 5

CF Pirri, S Porro, S Ferrero, E Celasco, S Guastella, L Scaltrito, Rositsa Yakimova, Mikael Syväjärvi, Rafal Ciechonski, S De Angelis and D Crippa
  Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications
  Crystal research and technology (1981), 2005, 40(10-Nov), 964-966.

Daniela Gogova, Henrik Larsson, A. Kasic, Gholam Reza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar, E. Aujol, E. Frayssinet, J-P. Faurie, B. Beaumont and P. Gibart
  High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
  Japanese Journal of Applied Physics, 2005, 44, 1181-1185.
 Web of Science® Times Cited: 17

N.B. Strokan, A.M. Ivanov, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  Measurement of micrometer diffusion lengths by nuclear spectrometry
  Semiconductors (Woodbury, N.Y.), 2005, 39(12), 1394-1398.
 Web of Science® Times Cited: 6

Rositsa Yakimova, N Vouroutzis, Mikael Syväjärvi and J Stoemenos
  Morphological features related to micropipe closing in 4H-SiC
  Journal of Applied Physics, 2005, 98(3), 34905.
 Web of Science® Times Cited: 8

Rafal Ciechonski, Mikael Syväjärvi, Jawad ul-Hassan and Rositsa Yakimova
  Structural instabilities in growth of SiC crystals
  Journal of Crystal Growth, 2005, 275(1-2), e461-e466.
 Web of Science® Times Cited: 5

Rositsa Yakimova, Anelia Kakanakova-Georgieva, Gholamreza R. Yazdi, Gueorgui K. Gueorguiev and Mikael Syväjärvi
  Sublimation growth of AlN crystals: Growth mode and structure evolution
  Journal of Crystal Growth, 2005, 281(1), 81-86.
 Web of Science® Times Cited: 26

N.B. Strokan, A.M. Ivanov, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  The limiting energy resolution of SiC detectors in ion spectrometry
  Semiconductors (Woodbury, N.Y.), 2005, 39(12), 1420-1425.
 Web of Science® Times Cited: 3

S.Yu. Davydov, A.A. Lebedev, N.S. Savkina, Mikael Syväjärvi and Rositsa Yakimova
  A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum
  Semiconductors (Woodbury, N.Y.), 2004, 38(2), 150-152.
 Web of Science® Times Cited: 1

Daniela Gogova, A. Kasic, Henrik Larsson, B. Pécz, Rositsa Yakimova, Ivan Gueorguiev Ivanov and Bo Monemar
  Characterization of high-quality free-standing GaN grown by HVPE
  Physica Scripta, 2004, T114, 18-21.
 Web of Science® Times Cited: 3

Anelia Kakanakova-Georgieva, Gueorgui Kostov Gueorguiev, Rositsa Yakimova and Erik Janzén
  Effect of impurity incorporation on crystallization in AlN sublimation epitaxy
  Journal of Applied Physics, 2004, 96(9), 5293-5297.
 Web of Science® Times Cited: 9

H. Jacobson, Rositsa Yakimova, P. Raback, Mikael Syväjärvi, Anne Henry, T. Tuomi and Erik Janzén
  Lateral enlargement of silicon carbide crystals
  Journal of Crystal Growth, 2004, 270(1-2), .
 Web of Science® Times Cited: 2

Milena Beshkova, Z. Zakhariev, M.V. Abrashev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Low-pressure sublimation epitaxy of AlN films - growth and characterization
  Vacuum, 2004, 76, 143-146.
 Web of Science® Times Cited: 4

E Polychroniadis, Mikael Syväjärvi, Rositsa Yakimova and J Stoemenos
  Microstructural characterization of very thick freestanding 3C-SiC wafers
  Journal of Crystal Growth, 2004, 263( 1-4), 68-75.
 Web of Science® Times Cited: 57

Daniela Gogova, A Kasic, Henrik Larsson, B Pecz, Rositsa Yakimova, Björn Magnusson, Bo Monemar, F Tuomisto, K Saarinen, C Miskys, M Stutzmann, C Bundesmann and M Schubert
  Optical and structural characteristics of virtually unstrained bulk-like GaN
  Japanese Journal of Applied Physics, 2004, 43(4A), 1264-1268.
 Web of Science® Times Cited: 23

N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.A. Lebedev, V.V. Kozlovskii, Mikael Syväjärvi and Rositsa Yakimova
  Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
  Semiconductors (Woodbury, N.Y.), 2004, 38(7), 807-811.
 Web of Science® Times Cited: 16

Anelia Kakanakova-Georgieva, Per Persson, Rositsa Yakimova, Lars Hultman and Erik Janzén
  Sublimation epitaxy of AlN on SiC: Growth morphology and structural features
  Journal of Crystal Growth, 2004, 273(1-2), 161-166.
 Web of Science® Times Cited: 11

N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.M. Strelchuk, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  Detection of strongly and weakly ionizing radiation by triode structure based on SIC films
  Journal of Applied Physics, 2003, 93(9), 5714-5719.
 Web of Science® Times Cited: 8

Per Persson, Lars Hultman, M.S. Janson, A. Hallen and Rositsa Yakimova
  Dislocation loop evolution in ion implanted 4H-SiC
  Journal of Applied Physics, 2003, 93(11), 9395-9397.
 Web of Science® Times Cited: 13

H. Jacobson, Jens Birch, Christer Hallin, Anne Henry, Rositsa Yakimova, T. Tuomi, Erik Janzén and Ulf Lindefelt
  Doping-induced strain in N-doped 4H-SiC crystals
  Applied Physics Letters, 2003, 82(21), 3689-3691.
 Web of Science® Times Cited: 30

Rafal Ciechonski, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Effect of boron on the resistivity of compensated 4H-SiC
  Journal of electronic materials, 2003, 32(5), 452-457.
 Web of Science® Times Cited: 4

Daniela Gogova, Henrik Larsson, Rositsa Yakimova, Z. Zolnai, Ivan Gueorguiev Ivanov and Bo Monemar
  Fast growth of high quality GaN
  Physica status solidi. A, Applied research, 2003, 200(1), 13-17.
 Web of Science® Times Cited: 20

Henrik Larsson, Daniela Gogova, A. Kasic, Rositsa Yakimova, Bo Monemar, C. R. Miskys and M. Stutzmann
  Free-standing HVPE-GaN Layers
  Physica Status Solidi. C, Current topics in solid state physics, 2003, 0(7), 1985-1988.

N.B. Strokan, A.M. Ivanov, M.E. Boiko, N.S. Savkina, A.M. Strel'chuk, A.A. Lebedev and Rositsa Yakimova
  Silicon carbide transistor structures as detectors of weakly ionizing radiation
  Semiconductors (Woodbury, N.Y.), 2003, 37(1), 65-69.
 Web of Science® Times Cited: 3

H. Jacobson, Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, T. Tuomi and Erik Janzén
  Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers
  Journal of Crystal Growth, 2003, 256(3-4), 276-282.
 Web of Science® Times Cited: 4

Milena Beshkova, Z Zakhariev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Sublimation epitaxy of AIN layers on 4H-SiC depending on the type of crucible
  Journal of materials science. Materials in electronics, 2003, 14(10-12), 767-768.
 Web of Science® Times Cited: 5

Anelia Kakanakova-Georgieva, Rositsa Yakimova, Anne Henry, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Cathodoluminescence identification of donor-acceptor related emissions in as-grown 4H-SiC layers
  Journal of Applied Physics, 2002, 91(5), 2890-2895.
 Web of Science® Times Cited: 21

H. Jacobson, Jens Birch, Rositsa Yakimova, Mikael Syväjärvi, Peder Bergman, A. Ellison, T. Tuomi and Erik Janzén
  Dislocation-evolution in 4H-SiC epitaxial layers
  Journal of Applied Physics, 2002, 91(10 I), 6354.
 Web of Science® Times Cited: 67

Anelia Kakanakova-Georgieva, Rositsa Yakimova, G.K. Gueorguiev, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
  Journal of Crystal Growth, 2002, 240(3-4), 501-507.
 Web of Science® Times Cited: 2

T Kihlgren, T Balasubramanian, L Wallden and Rositsa Yakimova
  Narrow photoemission lines from graphite valence states
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(23), .
 Web of Science® Times Cited: 30

Per Persson, Lars Hultman, M.S. Janson, A. Hallen, Rositsa Yakimova, D. Panknin and W. Skorupa
  On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
  Journal of Applied Physics, 2002, 92(5), 2501.
 Web of Science® Times Cited: 29

N. Nordell, O. Bowallius, S. Anand, Anelia Kakanakova-Georgieva, Rositsa Yakimova, L.D. Madsen, S. Karlsson and A.O. Konstantinov
  Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates
  Applied Physics Letters, 2002, 80(10), 1755.
 Web of Science® Times Cited: 9

A.A. Lebedev, V.V. Kozlovski, N.B. Strokan, D.V. Davydov, A.M. Ivanov, A.M. Strel'chuk and Rositsa Yakimova
  Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)
  Semiconductors (Woodbury, N.Y.), 2002, 36(11), 1270-1275.
 Web of Science® Times Cited: 22

Anelia Kakanakova-Georgieva, Rositsa Yakimova, M.K. Linnarsson and Erik Janzén
  Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy
  Journal of Applied Physics, 2002, 91(5), 3471-3473.
 Web of Science® Times Cited: 7

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Step-bunching in SiC epitaxy: Anisotropy and influence of growth temperature
  Journal of Crystal Growth, 2002, 236(1-3), 297-304.
 Web of Science® Times Cited: 30

A.A. Lebedev, N.B. Strokan, A.M. Ivanov, D.V. Davydov, N.S. Savkina, E.V. Bogdanova, A.N. Kuznetsov and R. Yakimova
  Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films
  Applied Physics Letters, 2001, 79(26), 4447-4449.
 Web of Science® Times Cited: 6

P.-A. Glans, T. Balasubramanian, Mikael Syväjärvi, Rositsa Yakimova and Leif Johansson
  Core level and valence band photoemission study of the (1 1 1) and (1¯ 1¯ 1¯) surfaces of 3C-SiC
  Surface Science, 2001, 470(3), 284-292.
 Web of Science® Times Cited: 18

E. Trifonova, I. Angelova, Rositsa Yakimova and Erik Janzén
  Microhardness depth profiles of Si/SiC multi-layered structures prepared by chemical vapor deposition
  Bulgarian Journal of Physics, 2001, 28(3-4), 147-152.

M. Tuominen, A. Ellison, T. Tuomi, Rositsa Yakimova, S. Milita and Erik Janzén
  Nature and occurrence of defects in 6H-SiC Lely crystals
  Journal of Crystal Growth, 2001, 225(1), 23-33.
 Web of Science® Times Cited: 9

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Anisotropic etching of SiC
  Journal of the Electrochemical Society, 2000, 147(9), 3519-3522.
 Web of Science® Times Cited: 27

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Cross-sectional cleavages of SiC for evaluation of epitaxial layers
  Journal of Crystal Growth, 2000, 208(1), 409-415.
 Web of Science® Times Cited: 12

M. Kayambaki, K. Tsagaraki, V. Cimalla, K. Zekentes and Rositsa Yakimova
  Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals
  Journal of the Electrochemical Society, 2000, 147(7), 2744-2748.
 Web of Science® Times Cited: 19

L. Hitova, Rositsa Yakimova, E.P. Trifonova, A. Lenchev and Erik Janzén
  Heat capacity of 4H-SiC determined by differential scanning calorimetry
  Journal of the Electrochemical Society, 2000, 147(9), 3546-3547.
 Web of Science® Times Cited: 14

Tanja Paskova, E.M. Goldys, Rositsa Yakimova, E.B. Svedberg, Anne Henry and Bo Monemar
  Influence of growth rate on the structure of thick GaN layers grown by HVPE
  Journal of Crystal Growth, 2000, 208(1), 18-26.
 Web of Science® Times Cited: