Publications for Rositsa Yakimova
Co-author map based on ISI articles 2007-

Publications mentioned in social media 60 times*

Keywords

thickness temperature substrates sublimation silicon sic quantum p>we optical microscopy magnetic hall graphene epitaxial energy electronic carrier carbide 6h-sic 3c-sic

Journal Articles

Pawel Kwasnicki, Valdas Jokubavicius, Jianwu Sun, H. Peyre, Rositsa Yakimova, Mikael Syväjärvi, J. Camasse and S. Juillaguet
  Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
  Materials Science Forum, 2014, 778-780, 243-246.

Cristina E. Giusca, Steve J. Spencer, Alex G. Shard, Rositsa Yakimova and Olga Kazakova
  Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods
  Carbon, 2014, 69, 221-229.
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Volodymyr Khranovskyy, M.O. Eriksson, György Zoltán Radnóczi, A. Khalid, H. Zhang, Per-Olof Holtz, Lars Hultman and Rositsa Yakimova
  Photoluminescence study of basal plane stacking faults in ZnO nanowires
  Physica. B, Condensed matter, 2014, 439, 50-53.
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Rositsa Yakimova, Tihomir Iakimov, Gholamreza Yazdi, Chamseddine Bouhafs, J. Eriksson, A. Zakharov, A. Boosalis, M. Schubert and Vanya Darakchieva
  Morphological and electronic properties of epitaxial graphene on SiC
  Physica. B, Condensed matter, 2014, 439, 54-59.
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Yiyu Ou, Xiaolong Zhu, Valdas Jokubavicius, Rositsa Yakimova, N. Asger Mortensen, Mikael Syväjärvi, Sanshui Xiao and Haiyan Ou
  Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures
  Scientific Reports, 2014, 4, 4662.
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Thomas Hardisty Bointon, Ivan Khrapach, Rositsa Yakimova, Andrey V. Shytov, Monica F. Craciun and Saverio Russo
  Approaching Magnetic Ordering in Graphene Materials by FeCl3 Intercalation
  Nano letters (Print), 2014, 14(4), 1751-1755.

Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, E. K. Polychroniadis and Risitza Yakimova
  Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
  Journal of Crystal Growth, 2014, 395, 109-115.

Jens Eriksson, Donatella Puglisi, Yu Hsuan Kang, Rositsa Yakimova and Anita Lloyd Spetz
  Adjusting the electronic properties and gas reactivity of epitaxial graphene by thin surface metallization
  Physica. B, Condensed matter, 2014, 439, 105-108.
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P. Olbrich, C. Drexler, L. E. Golub, S. N. Danilov, V. A. Shalygin, Rositsa Yakimova, S. Lara-Avila, S. Kubatkin, B. Redlich, R. Huber and S. D. Ganichev
  Reststrahl band-assisted photocurrents in epitaxial graphene layers
 
Altmetric usage: 2

  Physical Review B. Condensed Matter and Materials Physics, 2013, 88(24), 245425.
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Tom Yager, Arseniy Lartsev, Sumedh Mahashabde, Sophie Charpentier, Dejan Davidovikj, Andrey Danilov, Rositza Yakimova, Vishal Panchal, Olga Kazakova, Alexander Tzalenchuk, Samuel Lara-Avila and Sergey Kubatkin
  Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport
 
Altmetric usage: 2

  Nano letters (Print), 2013, 13(9), 4217-4223.
 Web of Science® Times Cited: 1

P. Vasek, L. Smrcka, P. Svoboda, M. Ledinsky, V. Jurka, M. Orlita, D. K. Maude, W. Strupinski, R. Stepniewski and Rositsa Yakimova
  Magnetotransport in graphene on silicon side of SiC
  Journal of Physics, Conference Series, 2013, 456(1), 012038.
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Federico Mazzola, Justin W. Wells, Rositsa Yakimova, Soren Ulstrup, Jill A. Miwa, Richard Balog, Marco Bianchi, Mats Leandersson, Johan Adell, Philip Hofmann and T Balasubramanian
  Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling
 
Altmetric usage: 1

  Physical Review Letters, 2013, 111(21), 216806.
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 Web of Science® Times Cited: 2

L Hao, J Gallop, S Goniszewski, O Shaforost, N Klein and Rositsa Yakimova
  Non-contact method for measurement of the microwave conductivity of graphene
  Applied Physics Letters, 2013, 103(12), .
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V Eless, T Yager, S Spasov, S Lara-Avila, Rositsa Yakimova, S Kubatkin, T J B M. Janssen, A Tzalenchuk and V Antonov
  Phase coherence and energy relaxation in epitaxial graphene under microwave radiation
 
Altmetric usage: 1

  Applied Physics Letters, 2013, 103(9), .
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Vishal Panchal, Ruth Pearce, Rositsa Yakimova, Alexander Tzalenchuk and Olga Kazakova
  Standardization of surface potential measurements of graphene domains
 
Altmetric usage: 3

  Scientific Reports, 2013, 3, .
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 Web of Science® Times Cited: 3

J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A Tzalenchuk, S Lara-Avila, S Kubatkin, Rositsa Yakimova, B A. Piot, D K. Maude and R J. Nicholas
  Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
 
Altmetric usage: 2

  Physical Review Letters, 2013, 111(9), e096601.
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P Kuehne, Vanya Darakchieva, Rositsa Yakimova, J D. Tedesco, R L. Myers-Ward, C R. Jr Eddy, D K. Gaskill, C M. Herzinger, J A. Woollam, M Schubert and T Hofmann
  Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect
 
Altmetric usage: 1

  Physical Review Letters, 2013, 111(7), e077402.
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Vishal Panchal, Oscar Iglesias-Freire, Arseniy Lartsev, Rositsa Yakimova, Agustina Asenjo and Olga Kazakova
  Magnetic Scanning Probe Calibration Using Graphene Hall Sensor
  IEEE transactions on magnetics, 2013, 49(7), 3520-3523.
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 Web of Science® Times Cited: 1

Vanya Darakchieva, A. Boosalis, A. A. Zakharov, T. Hofmann, M. Schubert, T. E. Tiwald, Tihomir Iakimov, Remigijus Vasiliauskas and Rositsa Yakimova
  Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
  Applied Physics Letters, 2013, 102(21), 213116.
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 Web of Science® Times Cited: 2

Chao Xia, Somsakul Watcharinyanon, A A. Zakharov, Leif I. Johansson, Rositsa Yakimova and Chariya Virojanadara
  Detailed studies of Na intercalation on furnace-grown graphene on 6H-SiC(0001)
  Surface Science, 2013, 613, 88-94.
 Web of Science® Times Cited: 1

Gholamreza Yazdi, Remigijus Vasiliauskas, Tihomir Iakimov, Alexei Zakharov, Mikael Syväjärvi and Rositsa Yakimova
  Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
  Carbon, 2013, 57, 477-484.
 Web of Science® Times Cited: 3

O Kazakova, T L. Burnett, J Patten, L Yang and Rositsa Yakimova
  Epitaxial graphene on SiC(000(1)over-bar): functional electrical microscopy studies and effect of atmosphere
  Nanotechnology, 2013, 24(21), .
 Web of Science® Times Cited: 1

Volodymyr Khranovskyy, Alexey M. Glushenkov, Y Chen, A Khalid, H Zhang, Lars Hultman, Bo Monemar and Rositsa Yakimova
  Crystal phase engineered quantum wells in ZnO nanowires
  Nanotechnology, 2013, 24(21), .
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Ruth Pearce, Jens Eriksson, Tihomir Iakimov, Lars Hultman, Anita Lloyd Spetz and Rositza Yakimova
  On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy
 
Altmetric usage: 1

  ACS Nano, 2013, 7(5), 4647-4656.
 Web of Science® Times Cited: 2

Sajjad Hussain, Yaqoob Khan, Volodymyr Khranovskyy, Riaz Muhammad and Rositsa Yakimova
  Effect of oxygen content on the structural and optical properties of ZnO films grown by atmospheric pressure MOCVD
  Progress in Natural Science, 2013, 23(1), 44-50.
 Web of Science® Times Cited: 1

Leif Johansson, Chao Xia, Jawad ul Hassan, Tihomir Iakimov, Alexei A. Zarharov, Somsakul Watcharinyanon, Rositza Yakimova, Erik Janzén and Chariya Virojanadara
  Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
  Crystals, 2013, 3(1), 1-13.
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I. Shtepliuka, Volodymyr Khranovskyy, G. Lashkarev, V. Khomyak, A. Ievtushenko, V. Tkach, V. Lazorenko, I. Timofeeva and Rositsa Yakimova
  Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method
  Applied Surface Science, 2013, 276, 550-557.
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 Web of Science® Times Cited: 2

I Shtepliuk, Volodymyr Khranovskyy, G Lashkarev, V. Khomyak, V Lazorenko, A Ievtushenko, Mikael Syväjärvi, Valdas Jokubavicius and Rositsa Yakimova
  Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
  Solid-State Electronics, 2013, 81, 72-77.
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 Web of Science® Times Cited: 4

C Drexler, S A. Tarasenko, P Olbrich, J Karch, M Hirmer, F Mueller, M Gmitra, J Fabian, Rositsa Yakimova, S Lara-Avila, S Kubatkin, M Wang, R Vajtai, P M Ajayan, J Kono and S D. Ganichev
  Magnetic quantum ratchet effect in graphene
 
Altmetric usage: 7

  Nature Nanotechnology, 2013, 8(2), 104-107.
 Web of Science® Times Cited: 5

Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
  Materials Science Forum, 2013, 740-742, 19-22.

A M R Baker, J A Alexander-Webber, T Altebaeumer, S D. McMullan, T J B M Janssen, A Tzalenchuk, S Lara-Avila, S Kubatkin, Rositsa Yakimova, C-T Lin, L-J Li and R J. Nicholas
  Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
 
Altmetric usage: 4

  Physical Review B. Condensed Matter and Materials Physics, 2013, 87(4), 045414.
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 Web of Science® Times Cited: 8

Vishal Panchal, David Cox, Rositsa Yakimova and Olga Kazakova
  Epitaxial Graphene Sensors for Detection of Small Magnetic Moments
  IEEE transactions on magnetics, 2013, 49(1), 97-100.
 Web of Science® Times Cited: 1

Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching
  OPTICAL MATERIALS EXPRESS, 2013, 3(1), 86-94.
 Web of Science® Times Cited: 1

A. Boosalis, T. Hofmann, Vanya Darakchieva, Rositsa Yakimova and M. Schubert
  Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry
 
Altmetric usage: 1

  Applied Physics Letters, 2012, 101(1), .
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 Web of Science® Times Cited: 5

Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Rositsa Yakimova and Mikael Syväjärvi
  White light-emitting diode based on fluorescent SiC
  Thin Solid Films, 2012, 522, 23-25.
 Web of Science® Times Cited: 1

A M R Baker, J A Alexander-Webber, T Altebaeumer, T J B M Janssen, A Tzalenchuk, S Lara-Avila, S Kubatkin, Rositsa Yakimova, C-T Lin, L-J Li and R J Nicholas
  Weak localization scattering lengths in epitaxial, and CVD graphene
 
Altmetric usage: 1

  Physical Review B. Condensed Matter and Materials Physics, 2012, 86(23), 235441.
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 Web of Science® Times Cited: 6

F Giannazzo, I Deretzis, A La Magna, F Roccaforte and Rositsa Yakimova
  Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
  Physical Review B. Condensed Matter and Materials Physics, 2012, 86(23), .
 Web of Science® Times Cited: 8

Tim L Burnett, Rositsa Yakimova and Olga Kazakova
  Identification of epitaxial graphene domains and adsorbed species in ambient conditions using quantified topography measurements
 
Altmetric usage: 1

  Journal of Applied Physics, 2012, 112(5), 054308.
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 Web of Science® Times Cited: 4

Volodymyr Khranovskyy, V Lazorenko, G Lashkarev and Rositsa Yakimova
  Luminescence anisotropy of ZnO microrods
  Journal of Luminescence, 2012, 132(10), 2643-2647.
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 Web of Science® Times Cited: 4

Bogdan Ranguelov, Desislava Goranova, Vesselin Tonchev and Rositsa Yakimova
  Diffusion Limited Aggregation with modified local rules
  Comptes Rendus de l'Academie Bulgare des Sciences / Proceedings of the Bulgarian Academy of Sciences, 2012, 65(7), 913-918.

Yiyu Ou, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures
  Optics Letters, 2012, 37(18), 3816-3818.
 Web of Science® Times Cited: 7

Volodymyr Khranovskyy, Tobias Ekblad, Rositsa Yakimova and Lars Hultman
  Surface morphology effects on the light-controlled wettability of ZnO nanostructures
  Applied Surface Science, 2012, 258(20), 8146-8152.
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 Web of Science® Times Cited: 9

Jianwu Sun, Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Considerably long carrier lifetimes in high-quality 3C-SiC(111)
  Applied Physics Letters, 2012, 100(25), 252101.
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 Web of Science® Times Cited: 8

Milena Beshkova, Jens Birch, Mikael Syväjärvi and Rositsa Yakimova
  Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
  Vacuum, 2012, 86(10), 1595-1599.
 Web of Science® Times Cited: 1

Rositza Yakimova, Linnea Selegård, Volodymyr Khranovskyy, Ruth Pearce, Anita Lloyd Spetz and Kajsa Uvdal
  ZnO materials and surface tailoring for biosensing
  Frontiers in bioscience (Elite edition), 2012, 4, 254-278.
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Jens Eriksson, Ruth Pearce, Tihomir Iakimov, Chariya Virojanadara, Daniela Gogova, Mike Andersson, Mikael Syväjärvi, Anita Lloyd Spetz and Rositza Yakimova
  The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
 
Altmetric usage: 1

  Applied Physics Letters, 2012, 100(24), 241607.
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 Web of Science® Times Cited: 9

Jianwu Sun, T. Robert, A. Andreadou, A. Mantzari, Valdas Jokubavicius, Rositsa Yakimova, J. Camassel, S. Juillaguet, E. K. Polychroniadis and Mikael Syväjärvi
  Shockley-Frank stacking faults in 6H-SiC
  Journal of Applied Physics, 2012, 111, 113527.
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 Web of Science® Times Cited: 2

T J B M Janssen, J M Williams, N E Fletcher, R Goebel, A Tzalenchuk, Rositsa Yakimova, S Lara-Avila, S Kubatkin and V I Falko
  Precision comparison of the quantum Hall effect in graphene and gallium arsenide
 
Altmetric usage: 2

  Metrologia, 2012, 49(3), 294-306.
 Web of Science® Times Cited: 14

V Panchal, K Cedergren, Rositsa Yakimova, A Tzalenchuk, S Kubatkin and O Kazakova
  Small epitaxial graphene devices for magnetosensing applications
  Journal of Applied Physics, 2012, 111(7), 07E509.
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 Web of Science® Times Cited: 8

Volodymyr Khranovskyy and Rositsa Yakimova
  Morphology engineering of ZnO nanostructures
  Physica. B, Condensed matter, 2012, 407(10), 1533-1537.
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 Web of Science® Times Cited: 4

Volodymyr Khranovskyy, Rositsa Yakimova, Fredrik Karlsson, Abdul S Syed, Per-Olof Holtz, Zelalem Nigussa Urgessa, Oluwatobi Samuel Oluwafemi and Johannes Reinhardt Botha
  Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques
  Physica. B, Condensed matter, 2012, 407(10), 1538-1542.
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 Web of Science® Times Cited: 3

Jianwu Sun, Satoshi Kamiyama, Valdas Jokubavicius, H. Peyre, Rositsa Yakimova, S. Juillaguet and Mikael Syväjärvi
  Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
  Journal of Physics D: Applied Physics, 2012, 45(23), 235107.
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 Web of Science® Times Cited: 1

Thomas Maassen, J Jasper van den Berg, Natasja IJbema, Felix Fromm, Thomas Seyller, Rositsa Yakimova and Bart J van Wees
  Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)
 
Altmetric usage: 2

  Nano letters (Print), 2012, 12(3), 1498-1502.
 Web of Science® Times Cited: 27

Yiyu Ou, Valdas Jokubavicius, Philip Hens, Michl Kaiser, Peter Wellmann, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
  Optics Express, 2012, 20(7), 7575-7579.
 Web of Science® Times Cited: 8

Remigijus Vasiliauskas, A. Mekys, P. Malinovskis, Mikael Syväjärvi, J. Storasta and Rositza Yakimova
  Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC
  Materials letters (General ed.), 2012, 74, 203-205.
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 Web of Science® Times Cited: 3

Remigijus Vasiliauskas, A. Mekys, P. Malinovskis, Sandrine Juillaguer, Mikael Syväjärvi, J. Storasta and Risitza Yakimova
  Impact of extended defects on Hall and magnetoresistivity effects in cubic silicon carbide
  Journal of Physics D: Applied Physics, 2012, 45(22), 225102.
 Web of Science® Times Cited: 1

Remigijus Vasiliauskas, Sandrine Juillaguer, Mikael Syväjärvi and Risitza Yakimova
  Cubic SiC formation on the C-face of 6H-SiC (0001) substrates
  Journal of Crystal Growth, 2012, 348(1), 91-96.
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 Web of Science® Times Cited: 9

Yiyu Ou, Valdas Jokubavicius, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC
  Physica Scripta, 2012, T148, 014003.

Mi Zhou, Frank L Pasquale, Peter A Dowben, Alex Boosalis, Mathias Schubert, Vanya Darakchieva, Rositsa Yakimova, Lingmei Kong and Jeffry A Kelber
  Direct graphene growth on Co3O4(111) by molecular beam epitaxy
 
Altmetric usage: 1

  Journal of Physics: Condensed Matter, 2012, 24(7), 072201.
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 Web of Science® Times Cited: 7

Jianwu Sun, Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama and Mikael Syväjärvi
  Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
  Thin Solid Films, 2012, 522, 33-35.

Chao Xia, Somsakul Watcharinyanon, A A Zakharov, Rositsa Yakimova, Lars Hultman, Leif I Johansson and Chariya Virojanadara
  Si intercalation/deintercalation of graphene on 6H-SiC(0001)
 
Altmetric usage: 2

  Physical Review B. Condensed Matter and Materials Physics, 2012, 85(4), 045418.
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 Web of Science® Times Cited: 24

Valdas Jokubavicius, P. Hens, Richard Liljedahl, Jianwu Sun, M. Kaiser, P. Wellmann, S. Sano, Rositza Yakimova, S. Kamiyama and Mikael Syväjärvi
  Effects of source material on epitaxial growth of fluorescent SiC
  Thin Solid Films, 2012, 522, 7-10.
 Web of Science® Times Cited: 2

Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, G Wagner, Rositsa Yakimova, P Wellmann and Mikael Syväjärvi
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  Materials letters (General ed.), 2012, 67(1), 300-302.
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 Web of Science® Times Cited: 4

Remigijus Vasiliauskas, Maya Marinova, Philip Hens, Peter Wellmann, Mikael Syväjärvi and Rositsa Yakimova
  Nucleation Control of Cubic Silicon Carbide on 6H- Substrates
  Crystal Growth & Design, 2012, 12(1), 197-204.
 Web of Science® Times Cited: 9

J. W. Sun, Volodymyr Khranovskyy, M. Mexis, Martin Eriksson, Mikael Syväjärvi, I. Tsiaoussis, Gholamreza Yazdi, H. Peyre, S. Juillaguet, J. Camassel, Per-Olof Holtz, Peder Bergman, Lars Hultman and Rositsa Yakimova
  Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC
  Journal of Luminescence, 2012, 132(1), 122-127.

S. Sonde, C. Vecchio, F. Giannazzo, Rositsa Yakimova and E. Rimini
  Effect of graphene/4H-SiC(0 0 0 1) interface on electrostatic properties in graphene
  Physica. E, Low-Dimensional systems and nanostructures, 2012, 44(6), 993-996.

Valdas Jokubavicius, Richard Liljedahl, Yiyu Ou, Haiyan Ou, Satoshi Kamiyama, Rositza Yakimova and Mikael Syväjärvi
  Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
  Materials Science Forum, 2011, 679-680, 103-106.
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 Web of Science® Times Cited: 4

J Karch, C Drexler, P Olbrich, M Fehrenbacher, M Hirmer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, B Birkner, J Eroms, D Weiss, Rositsa Yakimova, S Lara-Avila, S Kubatkin, M Ostler, T Seyller and S. D. Ganichev
  Terahertz Radiation Driven Chiral Edge Currents in Graphene
 
Altmetric usage: 3

  Physical Review Letters, 2011, 107(27), 276601-1-276601-5.
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 Web of Science® Times Cited: 16

Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Donor-acceptor-pair emission characterization in N-B dopedf luorescent in SiC
  Optical Materials Express, 2011, 1(8), 1439-1446.
 Web of Science® Times Cited: 21

A. A Zakharov, Chariya Virojanadara, Somsakul Watcharinyanon, Rositsa Yakimova and Leif Johansson
  Nano-scale 3D (E,kx,ky) band structure imaging on graphene and intercalated graphene
  IBM Journal of Research and Development, 2011, 55(4), 6:1-6:6.
 Web of Science® Times Cited: 3

Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Mikael Syväjärvi and Rositsa Yakimova
  Fluorescent SiC and its application to white light-emitting diodes
  Journal of semiconductors, 2011, 32(1), 013004-1-013004-3.

T J B M Janssen, N E Fletcher, R Goebel, J M Williams, A Tzalenchuk, Rositsa Yakimova, S Kubatkin, S Lara-Avila and V I Falko
  Graphene, universality of the quantum Hall effect and redefinition of the SI system
 
Altmetric usage: 21

  New Journal of Physics, 2011, 13(9), 093026.
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 Web of Science® Times Cited: 20

Samuel Lara-Avila, Alexander Tzalenchuk, Sergey Kubatkin, Rositsa Yakimova, T J B M Janssen, Karin Cedergren, Tobias Bergsten and Vladimir Falco
  Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements
 
Altmetric usage: 1

  Physical Review Letters, 2011, 107(16), 166602.
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 Web of Science® Times Cited: 28

Chongyun Jiang, V A Shalygin, V Yu Panevin, S N Danilov, M M Glazov, Rositsa Yakimova, S Lara-Avila, S Kubatkin and S D Ganichev
  Helicity-dependent photocurrents in graphene layers excited by midinfrared radiation of a CO(2) laser
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(12), 125429.
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 Web of Science® Times Cited: 9

Leif I Johansson, Somsakul Watcharinyanon, A A Zakharov, Tihomir Iakimov, Rositsa Yakimova and Chariya Virojanadara
  Stacking of adjacent graphene layers grown on C-face SiC
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(12), 125405.
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 Web of Science® Times Cited: 20

Somsakul Watcharinyanon, Chariya Virojanadara, Jacek Osiecki, A A Zakharov, Rositsa Yakimova, Roger Uhrberg and Leif I Johansson
  Hydrogen intercalation of graphene grown on 6H-SiC(0001)
  Surface Science, 2011, 605(17-18), 1662-1668.
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 Web of Science® Times Cited: 30

Alexander Tzalenchuk, Samuel Lara-Avila, Karin Cedergren, Mikael Syväjärvi, Rositsa Yakimova, Olga Kazakova, T J B M Janssen, Kasper Moth-Poulsen, Thomas Bjornholm, Sergey Kopylov, Vladimir Falko and Sergey Kubatkin
  Engineering and metrology of epitaxial graphene
  Solid State Communications, 2011, 151(16), 1094-1099.
 Web of Science® Times Cited: 9

Ruth Pearce, Tihomir Iakimov, Mike Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova
  Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection
  Sensors and actuators. B, Chemical, 2011, 155(2), 451-455.
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 Web of Science® Times Cited: 43

Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, Rickard Liljedahl, G. Zoulis, J. Lorenzzi, G. Ferro, S. Juillaguet, J. Camassel, E. K. Polychroniadis and Rositsa Yakimova
  Effect of initial substrate conditions on growth of cubic silicon carbide
  Journal of Crystal Growth, 2011, 324(1), 7-14.
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 Web of Science® Times Cited: 19

T J B M Janssen, A Tzalenchuk, Rositsa Yakimova, S Kubatkin, S Lara-Avila, S Kopylov and V I Falko
  Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
  PHYSICAL REVIEW B, 2011, 83(23), 233402.
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 Web of Science® Times Cited: 25

Tim Burnett, Rositsa Yakimova and Olga Kazakova
  Mapping of Local Electrical Properties in Epitaxial Graphene Using Electrostatic Force Microscopy
  NANO LETTERS, 2011, 11(6), 2324-2328.
 Web of Science® Times Cited: 28

Carmelo Vecchio, Sushant Sonde, Corrado Bongiorno, Martin Rambach, Rositsa Yakimova, Vito Raineri and Filippo Giannazzo
  Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
  NANOSCALE RESEARCH LETTERS, 2011, 6(1), .
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 Web of Science® Times Cited: 10

Volodymyr Khranovskyy, I Tsiaoussis, Lars Hultman and Rositsa Yakimova
  Selective homoepitaxial growth and luminescent properties of ZnO nanopillars
  NANOTECHNOLOGY, 2011, 22(18), 185603.
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 Web of Science® Times Cited: 7

I Tsiaoussis, Volodymyr Khranovskyy, G P Dimitrakopulos, J Stoemenos, Rositsa Yakimova and B Pecz
  Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates
  JOURNAL OF APPLIED PHYSICS, 2011, 109(4), 043507.
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 Web of Science® Times Cited: 3

Samuel Lara-Avila, Kasper Moth-Poulsen, Rositsa Yakimova, Thomas Bjornholm, Vladimir Falko, Alexander Tzalenchuk and Sergey Kubatkin
  Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
  ADVANCED MATERIALS, 2011, 23(7), 878-+.
 Web of Science® Times Cited: 37

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini and V Raineri
  Correction: Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas (vol 97, 132101, 2010)
  Applied Physics Letters, 2011, 98(6), 069902.

Chariya Virojanadara, A A Zakharov, Somsakul Watcharinyanon, Rositsa Yakimova and Leif I Johansson
  A low-energy electron microscopy and x-ray photo-emission electron microscopy study of Li intercalated into graphene on SiC(0001)
  NEW JOURNAL OF PHYSICS, 2010, 12(125015), .
 Web of Science® Times Cited: 15

J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M.M. Glazov, S.A. Tarasenko, E.L. Ivchenko, D. Weiss, J. Eroms, Rositsa Yakimova, S. Lara-Avila, S. Kubatkin and S.D. Ganichev
  Dynamic Hall Effect Driven by Circularly Polarized Light in a Graphene Layer
  Physical Review Letters, 2010, 105(22), 227402.
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 Web of Science® Times Cited: 27

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini and V Raineri
  Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas
  APPLIED PHYSICS LETTERS, 2010, 97(13), 132101.
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 Web of Science® Times Cited: 23

Chariya Virojanadara, Rositsa Yakimova, A A Zakharov and Leif Johansson
  Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination
  JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43(37), 374010.
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 Web of Science® Times Cited: 26

Linnéa Selegård, Volodymyr Khranovskyy, Fredrik Söderlind, Cecilia Vahlberg, Maria Ahrén, Per-Olov Käll, Rositsa Yakimova and Kajsa Uvdal
  Biotinylation of ZnO Nanoparticles and Thin Films: A Two-Step Surface Functionalization Study
  ACS APPLIED MATERIALS and INTERFACES, 2010, 2(7), 2128-2135.
 Web of Science® Times Cited: 12

Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositsa Yakimova, Olga Kazakova, T J B M Janssen, Vladimir Falko and Sergey Kubatkin
  Towards a quantum resistance standard based on epitaxial graphene
  NATURE NANOTECHNOLOGY, 2010, 5(3), 186-189.
 Web of Science® Times Cited: 134

Chariya Virojanadara, A A Zakharov, Rositsa Yakimova and Leif I Johansson
  Buffer layer free large area bi-layer graphene on SiC(0001)
  SURFACE SCIENCE, 2010, 604(2), L4-L7.
 Web of Science® Times Cited: 39

Volodymyr Khranovskyy, I Tsiaoussis, Gholamreza Yazdi, Lars Hultman and Rositsa Yakimova
  Heteroepitaxial ZnO nano hexagons on p-type SiC
  JOURNAL OF CRYSTAL GROWTH, 2010, 312(2), 327-332.
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 Web of Science® Times Cited: 12

S Sonde, F Giannazzo, V Raineri, Rositsa Yakimova, J -R Huntzinger, A Tiberj and J Camassel
  Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy
  PHYSICAL REVIEW B, 2009, 80(24), 241406.
 Web of Science® Times Cited: 32

Volodymyr Khranovskyy, I Tsiaoussis, Arvid Larsson, Per-Olof Holtz and Rositsa Yakimova
  Nanointegration of ZnO with Si and SiC
  PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4359-4363.
 Web of Science® Times Cited: 5

Gholamreza Yazdi, Per Persson, D Gogova, Lars Hultman, Mikael Syväjärvi and Rositsa Yakimova
  Aligned AlN nanowires by self-organized vapor-solid growth
  NANOTECHNOLOGY, 2009, 20(49), 495304.
 Web of Science® Times Cited: 11

D Gogova, M Albrecht, T Remmele, K Irmscher, D Siche, H-J Rost, M Schmidbauer, R Fornari and Rositsa Yakimova
  Microscopic lateral overgrowth by physical vapour transport of GaN on self-organized diamond-like carbon masks
  CRYSTAL RESEARCH AND TECHNOLOGY, 2009, 44(10), 1078-1082.

T. Bohnen, Gholamreza Yazdi, Rositsa Yakimova, G W G van Dreumel, P R Hageman, E. Vlieg, R E Algra, M A Verheijen and J H Edgar
  ScAlN nanowires: A cathodoluminescence study
  JOURNAL OF CRYSTAL GROWTH, 2009, 311(11), 3147-3151.
 Web of Science® Times Cited: 10

Chariya Virojanadara, Rositsa Yakimova, Jacek Osiecki, Mikael Syväjärvi, Roger Uhrberg, Leif Johansson and A A Zakharov
  Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)
  Surface Science, 2009, 603(15), L87-L90.
 Web of Science® Times Cited: 33

Jens Eriksson, Volodymyr Khranovskyy, Fredrik Söderlind, Per-Olov Käll, Rositsa Yakimova and Anita Lloyd-Spets
  ZnO nanoparticles or ZnO films: A comparison of the gas sensing capabilities
  Sensors and actuators. B, Chemical, 2009, 137(1), 94-102.
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 Web of Science® Times Cited: 38

Gholamreza Yazdi, Manfred Beckers, Finn Giuliani, Mikael Syväjärvi, Lars Hultman and Rositsa Yakimova
  Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates
  APPLIED PHYSICS LETTERS, 2009, 94(8), 082109.
 Web of Science® Times Cited: 9

V I Sankin, P P Shkrebiy and Rositsa Yakimova
  Strong field hole transport in 6H-SiC
  APPLIED PHYSICS LETTERS, 2009, 94(8), 082101.
 Web of Science® Times Cited: 1

V A Karpyna, A A Evtukh, M O Semenenko, V I Lazorenko, G V Lashkarev, Volodymyr Khranovskyy, Rositsa Yakimova and D A Fedorchenko
  Electron field emission from ZnO self-organized nanostructures and doped ZnO: Ga nanostructured films
  Microelectronics Journal, 2009, 40(2), 229-231.
 Web of Science® Times Cited: 11

Volodymyr Khranovskyy, Jens Eriksson, Anita Lloyd Spetz, Rositsa Yakimova and Lars Hultman
  Effect of oxygen exposure on the electrical conductivity and gas sensitivity of nanostructured ZnO films
  Thin Solid Films, 2009, 517(6), 2073-2078.
 Web of Science® Times Cited: 32

V. Khranovskyy, A. Ulyashin, G. Lashkarev, B.G. Svensson and Rositsa Yakimova
  Morphology, electrical and optical properties of undoped ZnO layers deposited on silicon substrates by PEMOCVD
  Thin Solid Films, 2008, 516(7), 1396-1400.
 Web of Science® Times Cited: 13

Volodymyr Khranovskyy, Gholamreza Yazdi, G. Lashkarev, A. Ulyashin and Rositsa Yakimova
  Investigation of ZnO as a perspective material for photonics
  Physica status solidi. A, Applied research, 2008, 205(1), 144-149.
 Web of Science® Times Cited: 18

A.A. Lebedev, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nelson, G.A. Oganesyan, A.S. Tregubova and Rositsa Yakimova
  Highly doped p-type 3C-SiC on 6H-SiC substrates
  Semiconductor Science and Technology, 2008, 23(7), .
 Web of Science® Times Cited: 10

Gholamreza Yazdi, Remigijus Vasiliauskas, Mikael Syväjärvi and Rositsa Yakimova
  Fabrication of free-standing AlN crystals by controlled microrod growth
  Journal of Crystal Growth, 2008, 300(5), 935-939 .
 Web of Science® Times Cited: 3

Chariya Virojanadara, Mikael Syväjärvi, Rositsa Yakimova, Leif Johansson, A A Zakharov and T Balasubramanian
  Homogeneous large-area graphene layer growth on 6H-SiC(0001)
  Physical Review B. Condensed Matter and Materials Physics, 2008, 78(24), 245403.
 Web of Science® Times Cited: 196

Volodymyr Khranovskyy, Gholamreza Yazdi, Arvid Larsson, S Hussain, Per-Olof Holtz and Rositsa Yakimova
  Growth and characterization of ZnO nanostructured material
  Journal of Optoelectronics and Advanced Materials, 2008, 10(11), 2969-2975.

A Ievtushenko, G Lashkarev, V Lazorenko, V Karpyna, V Sichkovskyi, L Kosyachenko, V Sklyarchuk, O Sklyarchuk, V Bosy, F Korzhinski, A Ulyashin, Volodymyr Khranovskyy and Rositsa Yakimova
  Ultraviolet Detectors Based on ZnO: N Thin Films with Different Contact Structures
  Acta Physica Polonica. A, 2008, 114(5), 1123-1129.
 Web of Science® Times Cited: 8

A.A. Shiryaev, M. Wiedenbeck, V. Reutsky, V.B. Polyakov, N.N. Mel’nik, A.A. Lebedev and Rositsa Yakimova
  Isotopic heterogeneity in synthetic and natural silicon carbide
  Journal of Physics and Chemistry of Solids, 2008, 69(10), 2492-2498.
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 Web of Science® Times Cited: 4

A.A. Lebedev, V.V. Zelenin, P.L. Abramov, S.P. Lebedev, A.N. Smirnov, L.M. Sorokin, M.P. Shcheglov and Rositsa Yakimova
  Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
  Technical physics letters, 2007, 33(6), 524-526.
 Web of Science® Times Cited: 5

Rodrigo Jr Petoral, Gholamreza Yazdi, Anita Lloyd-Spets, Rositsa Yakimova and Kajsa Uvdal
  Organosilane-functionalized wide band gap semiconductor surfaces
  Applied Physics Letters, 2007, 90(22), .
 Web of Science® Times Cited: 18

V. Khranovskyy, R. Minikayev, S. Trushkin, G. Lashkarev, V. Lazorenko, U. Grossner, W. Paszkowicz, A. Suchocki, B.G. Svensson and Rositsa Yakimova
  Improvement of ZnO thin film properties by application of ZnO buffer layers
  Journal of Crystal Growth, 2007, 308(1), 93-98.
 Web of Science® Times Cited: 22

Milena Beshkova, K. G. Grigorov, Z. Zakhariev, M. Abrashev, M. Massi and Rositsa Yakimova
  Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates
  Journal of Optoelectronics and Advanced Materials, 2007, 9(1), 213-216.

V. Tonchev and Rositsa Yakimova
  A model of far from equilibrium growth
  Khimiya = Chemistry : Bulgarian journal of chemical education, 2007, 67, 15.

V. Khranovskyy, U. Grossner, L.I. Kopylova, V. Lazorenko, A.T. Budnikov, G.V. Lashkarev, B.G. Svensson and Rositsa Yakimova
  Conductivity increase of ZnO: Ga films by rapid thermal annealing
  Superlattices and Microstructures, 2007, 42( 1-6), 379-386.
 Web of Science® Times Cited: 22

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
  Recombination centers in as-grown and electron-irradiated ZnO substrates
  Journal of Applied Physics, 2007, 102(9), .
 Web of Science® Times Cited: 10

D.J. Ewing, L.M. Porter, Qamar Ul Wahab, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
  Semiconductor Science and Technology, 2007, 22(12), 1287-1291.
 Web of Science® Times Cited: 9

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Yu. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, M.N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
  Magnetic resonance studies of defects in electron-irradiated ZnO substrates
  Physica. B, Condensed matter, 2007, 401-402, 507-510.
 Web of Science® Times Cited: 2

Rositsa Yakimova, Rodrigo Jr Petoral, Gholamreza Yazdi, Cecilia Vahlberg, Anita Lloyd Spetz and Kajsa Uvdal
  Surface functionalization and biomedical applications based on SiC
  Journal of Physics D: Applied Physics, 2007, 40(20), 6435-6442.
 Web of Science® Times Cited: 73

Rositsa Yakimova, Georg Steinhoff, Rodrigo Jr Petoral, Cecilia Vahlberg, Volodymyr Khranovskyy, Gholamreza Yazdi, Kajsa Uvdal and Anita Lloyd Spetz
  Novel material concepts of transducers for chemical and biosensors
  Biosensors & bioelectronics, 2007, 22(12), 2780-2785.
 Web of Science® Times Cited: 44

Alexander Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel¿son, B.S. Razbirin, M.P. Shcheglov, A.S. Tregubova, Mikael Syväjärvi and Rositsa Yakimova
  A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
  Semiconductors (Woodbury, N.Y.), 2007, 41(3), 263-265.
 Web of Science® Times Cited: 16

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Formation of needle-like and columnar structures of AlN
  Journal of Crystal Growth, 2007, 300(1), 130-135 .
 Web of Science® Times Cited: 7

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Aligned AlN nanowires and microrods by self-patterning
  Applied Physics Letters, 2007, 90(12), 123103.
 Web of Science® Times Cited: 10

Anita Lloyd-Spets, S. Nakagomi, Helena Wingbrant, Mike Andersson, Anette Salomonsson, S. Roy, G. Wingqvist, I. Katardjiev, M. Eickhoff, Kajsa Uvdal and Rositsa Yakimova
  New materials for chemical and biosensors
  Materials and Manufacturing Processes, 2006, 21(3), 253-256.
 Web of Science® Times Cited: 10

M. Beshkova, Z. Zakhariev, M. V. Abrashev, Jens Birch, A. Postovit and Rositsa Yakimova
  Properties of AlN epitaxial layers on 6H-SiC substrate grown by sublimation in argon, nitrogen, and their mixtures
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2006, 129(1-3), 228-231.
 Web of Science® Times Cited: 1

V. Khranovskyy, U. Grossner, O. Nilsen, V. Lazorenko, G.V. Lashkarev, B.G. Svensson and Rositsa Yakimova
  Structural and morphological properties of ZnO: Ga thin films
  Thin Solid Films, 2006, 515(2 SPEC. ISS.), 472-476.
 Web of Science® Times Cited: 82

Rositsa Yakimova
  Developments in the growth of wide bandgap semiconductors
  Physica Scripta, 2006, T126, 121-126.
 Web of Science® Times Cited: 3

V. Khranovskyy, U. Grossner, V. Lazorenko, G. Lashkarev, B.G. Svensson and Rositsa Yakimova
  Study of annealing influence on electrical and morphological properties of ZnO: Ga thin films
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 3(4), 780784.
 Web of Science® Times Cited: 9

K. Neimontas, T. Malinauskas, R. Aleksiejunas, Rositsa Yakimova and K. Jarasiunas
  Temperature-dependent nonequilibrium carrier dynamics in epitaxial and bulk 4H-SiC
  Lithuanian journal of physics, 2006, 46, 199-204.

T. Kihlgren, T. Balasubramanian, L. Wallden and Rositsa Yakimova
  K/graphite: Uniform energy shifts of graphite valence states
  Surface Science, 2006, 600(5), 1160-1164.
 Web of Science® Times Cited: 5

V. Khranovskyy, U. Grossner, G.V. Lashkarev, B.G. Svensson and Rositsa Yakimova
  PEMOCVD of ZnO thin films, doped by Ga and some of their properties
  Superlattices and Microstructures, 2006, 39( 1-4), 275-281.
 Web of Science® Times Cited: 46

Rositsa Yakimova, Gholam Reza Yazdi, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Mikael Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov and B. Svensson
  Optical and Morphological Features of Bulk and Homoepitaxial ZnO
  Superlattices and Microstructures, 2006, 39, 247-256.
 Web of Science® Times Cited: 10

V.I. Sankin, P. P. Shkrebiy and Rositsa Yakimova
  Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates
  Applied Physics Letters, 2006, 89(23), 233508.
 Web of Science® Times Cited: 1

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Growth and morphology of AlN crystals
  Physica Scripta, 2006, T126, 127-130.
 Web of Science® Times Cited: 5

N.B. Strokan, A.M. Ivanov, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  Measurement of micrometer diffusion lengths by nuclear spectrometry
  Semiconductors (Woodbury, N.Y.), 2005, 39(12), 1394-1398.
 Web of Science® Times Cited: 6

N.B. Strokan, A.M. Ivanov, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  The limiting energy resolution of SiC detectors in ion spectrometry
  Semiconductors (Woodbury, N.Y.), 2005, 39(12), 1420-1425.
 Web of Science® Times Cited: 2

CF Pirri, S Porro, S Ferrero, E Celasco, S Guastella, L Scaltrito, Rositsa Yakimova, Mikael Syväjärvi, Rafal Ciechonski, S De Angelis and D Crippa
  Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications
  Crystal research and technology (1981), 2005, 40(10-Nov), 964-966.

Mikael Syväjärvi, Rafal R. Ciechonski, Gholamreza R. Yazdi and Rositsa Yakimova
  Fast epitaxy by PVT of SiC in hydrogen atmosphere
  Journal of Crystal Growth, 2005, 275(1-2), e1103-e1107 .
 Web of Science® Times Cited: 3

Rositsa Yakimova, Anelia Kakanakova-Georgieva, Gholamreza R. Yazdi, Gueorgui K. Gueorguiev and Mikael Syväjärvi
  Sublimation growth of AlN crystals: Growth mode and structure evolution
  Journal of Crystal Growth, 2005, 281(1), 81-86.
 Web of Science® Times Cited: 16

Daniela Gogova, Henrik Larsson, A. Kasic, Gholam Reza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar, E. Aujol, E. Frayssinet, J-P. Faurie, B. Beaumont and P. Gibart
  High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
  Japanese Journal of Applied Physics, 2005, 44, 1181-1185.
 Web of Science® Times Cited: 13

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
  Characterization of crack-free relaxed GaN grown on 2″ sapphire
  Journal of Applied Physics, 2005, 98(7), 73525.
 Web of Science® Times Cited: 4

Rafal Ciechonski, Mikael Syväjärvi, Qamar Ul Wahab and Rositsa Yakimova
  Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy
  Solid-State Electronics, 2005, 49(12), 1917-1920.

Rositsa Yakimova, N Vouroutzis, Mikael Syväjärvi and J Stoemenos
  Morphological features related to micropipe closing in 4H-SiC
  Journal of Applied Physics, 2005, 98(3), 34905.
 Web of Science® Times Cited: 6

A Paskaleva, Rafal Ciechonski, Mikael Syväjärvi, E Atanassova and Rositsa Yakimova
  Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric
  Journal of Applied Physics, 2005, 97(12), 124507.
 Web of Science® Times Cited: 16

Samuele Porro, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Electrical Analysis and Interface States Evaluation of of Ni Schottky diodes on 4H-SiC thick epilayers
  physica status solidi (a), 2005, 202(13), 2508-2514.
 Web of Science® Times Cited: 4

Rafal Ciechonski, Mikael Syväjärvi, Jawad ul-Hassan and Rositsa Yakimova
  Structural instabilities in growth of SiC crystals
  Journal of Crystal Growth, 2005, 275(1-2), e461-e466.
 Web of Science® Times Cited: 4

SY Davydov, Alexander Lebedev, NS Savkina, Mikael Syväjärvi and Rositsa Yakimova
  A simple model for calculating the growth rate of epitaxial layers of silicon carbide in vacuum
  Semiconductors (Woodbury, N.Y.), 2004, 38(2), 150-152.
 Web of Science® Times Cited: 1

Daniela Gogova, A. Kasic, Henrik Larsson, B. Pécz, Rositsa Yakimova, Ivan Gueorguiev Ivanov and Bo Monemar
  Characterization of high-quality free-standing GaN grown by HVPE
  Physica Scripta, 2004, T114, 18-21.
 Web of Science® Times Cited: 2

Daniela Gogova, A Kasic, Henrik Larsson, B Pecz, Rositsa Yakimova, Björn Magnusson, Bo Monemar, F Tuomisto, K Saarinen, C Miskys, M Stutzmann, C Bundesmann and M Schubert
  Optical and structural characteristics of virtually unstrained bulk-like GaN
  Japanese Journal of Applied Physics, 2004, 43(4A), 1264-1268.
 Web of Science® Times Cited: 20

N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.A. Lebedev, V.V. Kozlovskii, Mikael Syväjärvi and Rositsa Yakimova
  Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
  Semiconductors (Woodbury, N.Y.), 2004, 38(7), 807-811.
 Web of Science® Times Cited: 12

H. Jacobson, Rositsa Yakimova, P. Raback, Mikael Syväjärvi, Anne Henry, T. Tuomi and Erik Janzén
  Lateral enlargement of silicon carbide crystals
  Journal of Crystal Growth, 2004, 270(1-2), .
 Web of Science® Times Cited: 1

Milena Beshkova, Z. Zakhariev, M.V. Abrashev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Low-pressure sublimation epitaxy of AlN films - growth and characterization
  Vacuum, 2004, 76, 143-146.
 Web of Science® Times Cited: 4

Anelia Kakanakova-Georgieva, Per Persson, Rositsa Yakimova, Lars Hultman and Erik Janzén
  Sublimation epitaxy of AlN on SiC: Growth morphology and structural features
  Journal of Crystal Growth, 2004, 273(1-2), 161-166.
 Web of Science® Times Cited: 8

Anelia Kakanakova-Georgieva, Gueorgui Kostov Gueorguiev, Rositsa Yakimova and Erik Janzén
  Effect of impurity incorporation on crystallization in AlN sublimation epitaxy
  Journal of Applied Physics, 2004, 96(9), 5293-5297.
 Web of Science® Times Cited: 1

E Polychroniadis, Mikael Syväjärvi, Rositsa Yakimova and J Stoemenos
  Microstructural characterization of very thick freestanding 3C-SiC wafers
  Journal of Crystal Growth, 2004, 263( 1-4), 68-75.
 Web of Science® Times Cited: 52

Henrik Larsson, Daniela Gogova, A. Kasic, Rositsa Yakimova, Bo Monemar, C. R. Miskys and M. Stutzmann
  Free-standing HVPE-GaN Layers
  Physica Status Solidi. C, Current topics in solid state physics, 2003, 0(7), 1985-1988.

H. Jacobson, Jens Birch, Christer Hallin, Anne Henry, Rositsa Yakimova, T. Tuomi, Erik Janzén and Ulf Lindefelt
  Doping-induced strain in N-doped 4H-SiC crystals
  Applied Physics Letters, 2003, 82(21), 3689-3691.
 Web of Science® Times Cited: 20

Milena Beshkova, Z Zakhariev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Sublimation epitaxy of AIN layers on 4H-SiC depending on the type of crucible
  Journal of materials science. Materials in electronics, 2003, 14(10-12), 767-768.
 Web of Science® Times Cited: 2

N.B. Strokan, A.M. Ivanov, M.E. Boiko, N.S. Savkina, A.M. Strel'chuk, A.A. Lebedev and Rositsa Yakimova
  Silicon carbide transistor structures as detectors of weakly ionizing radiation
  Semiconductors (Woodbury, N.Y.), 2003, 37(1), 65-69.
 Web of Science® Times Cited: 3

N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.M. Strelchuk, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  Detection of strongly and weakly ionizing radiation by triode structure based on SIC films
  Journal of Applied Physics, 2003, 93(9), 5714-5719.
 Web of Science® Times Cited: 8

Per Persson, Lars Hultman, M.S. Janson, A. Hallen and Rositsa Yakimova
  Dislocation loop evolution in ion implanted 4H-SiC
  Journal of Applied Physics, 2003, 93(11), 9395-9397.
 Web of Science® Times Cited: 9

H. Jacobson, Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, T. Tuomi and Erik Janzén
  Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers
  Journal of Crystal Growth, 2003, 256(3-4), 276-282.
 Web of Science® Times Cited: 4

Daniela Gogova, Henrik Larsson, Rositsa Yakimova, Z. Zolnai, Ivan Gueorguiev Ivanov and Bo Monemar
  Fast growth of high quality GaN
  Physica status solidi. A, Applied research, 2003, 200(1), 13-17.
 Web of Science® Times Cited: 16

Rafal Ciechonski, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Effect of boron on the resistivity of compensated 4H-SiC
  Journal of electronic materials, 2003, 32(5), 452-457.
 Web of Science® Times Cited: 2

T Kihlgren, T Balasubramanian, L Wallden and Rositsa Yakimova
  Narrow photoemission lines from graphite valence states
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(23), .
 Web of Science® Times Cited: 30

Anelia Kakanakova-Georgieva, Rositsa Yakimova, Anne Henry, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Cathodoluminescence identification of donor-acceptor related emissions in as-grown 4H-SiC layers
  Journal of Applied Physics, 2002, 91(5), 2890-2895.
 Web of Science® Times Cited: 17

Anelia Kakanakova-Georgieva, Rositsa Yakimova, M.K. Linnarsson and Erik Janzén
  Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy
  Journal of Applied Physics, 2002, 91(5), 3471-3473.
 Web of Science® Times Cited: 6

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Step-bunching in SiC epitaxy: Anisotropy and influence of growth temperature
  Journal of Crystal Growth, 2002, 236(1-3), 297-304.
 Web of Science® Times Cited: 23

N. Nordell, O. Bowallius, S. Anand, Anelia Kakanakova-Georgieva, Rositsa Yakimova, L.D. Madsen, S. Karlsson and A.O. Konstantinov
  Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates
  Applied Physics Letters, 2002, 80(10), 1755.
 Web of Science® Times Cited: 8

Anelia Kakanakova-Georgieva, Rositsa Yakimova, G.K. Gueorguiev, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
  Journal of Crystal Growth, 2002, 240(3-4), 501-507.
 Web of Science® Times Cited: 1

H. Jacobson, Jens Birch, Rositsa Yakimova, Mikael Syväjärvi, Peder Bergman, A. Ellison, T. Tuomi and Erik Janzén
  Dislocation-evolution in 4H-SiC epitaxial layers
  Journal of Applied Physics, 2002, 91(10 I), 6354.
 Web of Science® Times Cited: 53

A.A. Lebedev, V.V. Kozlovski, N.B. Strokan, D.V. Davydov, A.M. Ivanov, A.M. Strel'chuk and Rositsa Yakimova
  Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)
  Semiconductors (Woodbury, N.Y.), 2002, 36(11), 1270-1275.
 Web of Science® Times Cited: 15

Per Persson, Lars Hultman, M.S. Janson, A. Hallen, Rositsa Yakimova, D. Panknin and W. Skorupa
  On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
  Journal of Applied Physics, 2002, 92(5), 2501.
 Web of Science® Times Cited: 20

E. Trifonova, I. Angelova, Rositsa Yakimova and Erik Janzén
  Microhardness depth profiles of Si/SiC multi-layered structures prepared by chemical vapor deposition
  Bulgarian Journal of Physics, 2001, 28(3-4), 147-152.

P.-A. Glans, T. Balasubramanian, Mikael Syväjärvi, Rositsa Yakimova and Leif Johansson
  Core level and valence band photoemission study of the (1 1 1) and (1¯ 1¯ 1¯) surfaces of 3C-SiC
  Surface Science, 2001, 470(3), 284-292.
 Web of Science® Times Cited: 11

M. Tuominen, A. Ellison, T. Tuomi, Rositsa Yakimova, S. Milita and Erik Janzén
  Nature and occurrence of defects in 6H-SiC Lely crystals
  Journal of Crystal Growth, 2001, 225(1), 23-33.
 Web of Science® Times Cited: 9

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, R Raback, A Vehanen and Erik Janzén
  Polytype stability in seeded sublimation growth of 4H-SiC boules
  Journal of Crystal Growth, 2000, 217(3), 255-262.
 Web of Science® Times Cited: 36

Alexander Lebedev, DV Davydov, NS Savkina, AS Tregubova, MP Shcheglov, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
  Semiconductors (Woodbury, N.Y.), 2000, 34(10), 1133-1136.
 Web of Science® Times Cited: 3

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson and Erik Janzén
  Structural improvement in sublimation epitaxy of 4H-SiC
  Journal of Applied Physics, 2000, 88(3), 1407-1411.
 Web of Science® Times Cited: 35

Tanja Paskova, E.M. Goldys, Rositsa Yakimova, E.B. Svedberg, Anne Henry and Bo Monemar
  Influence of growth rate on the structure of thick GaN layers grown by HVPE
  Journal of Crystal Growth, 2000, 208(1), 18-26.
 Web of Science® Times Cited: 34

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Cross-sectional cleavages of SiC for evaluation of epitaxial layers
  Journal of Crystal Growth, 2000, 208(1), 409-415.
 Web of Science® Times Cited: 5

M. Kayambaki, K. Tsagaraki, V. Cimalla, K. Zekentes and Rositsa Yakimova
  Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals
  Journal of the Electrochemical Society, 2000, 147(7), 2744-2748.
 Web of Science® Times Cited: 18

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Anisotropic etching of SiC
  Journal of the Electrochemical Society, 2000, 147(9), 3519-3522.
 Web of Science® Times Cited: 26

L. Hitova, Rositsa Yakimova, E.P. Trifonova, A. Lenchev and Erik Janzén
  Heat capacity of 4H-SiC determined by differential scanning calorimetry
  Journal of the Electrochemical Society, 2000, 147(9), 3546-3547.
 Web of Science® Times Cited: 9

Anelia Kakanakova-Georgieva, E.P. Trifonova, Rositsa Yakimova, M.F. MacMillan and Erik Janzén
  Microhardness of 6H-SiC epitaxial layers grown by sublimation
  Crystal research and technology (1981), 1999, 34(8), 943-947.

Mikael Syväjärvi, Rositsa Yakimova, M Tuominen, Anelia Kakanakova-Georgieva, M F Macmillan, Anne Henry, Qamar Ul Wahab and Erik Janzén
  Growth of 6H and 4H-SiC by sublimation epitaxy
  Journal of Crystal Growth, 1999, 197(1-2), 155-162.

Mikael Syväjärvi, Rositsa Yakimova, Anelia Kakanakova-Georgieva, M.F MacMillan and Erik Janzén
  Kinetics and morphological stability in sublimation growth of 6H and 4H-SiC epitaxial layers
  Materials Science and Engineering: B, 1999, 61-62, 161-164.

B Pecz, Rositsa Yakimova, Mikael Syväjärvi, C Lockowandt, H Radamson, G Radnoczi and Erik Janzén
  Structural investigation of SiC epitaxial layers grown under microgravity and on-ground conditions
  Thin Solid Films, 1999, 357(2), 137-143.

Mikael Syväjärvi, Rositsa Yakimova, AL Hylen and Erik Janzén
  Anisotropy of dissolution and defect revealing on SiC surfaces
  Journal of Physics: Condensed Matter, 1999, 11(49), 10041-10046.

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Step-bunching in 6H-SiC growth by sublimation epitaxy
  Journal of Physics: Condensed Matter, 1999, 11(49), 10019-10024.

B Pecz, Rositsa Yakimova, Mikael Syväjärvi, C Lockowandt, G Radnoczi and Erik Janzén
  Structure of SiC layers grown by LPE in microgravity and on-ground conditions
  Institute of Physics Conference Series, 1999, (164), 243-246.

M. Tuominen, Rositsa Yakimova, Anelia Kakanakova-Georgieva, M.F. MacMillan, Mikael Syväjärvi and Erik Janzén
  Investigation of domain evolution in sublimation epitaxy of SiC
  Journal of Crystal Growth, 1998, 193(1-2), 101-108.

Christer Hallin, Rositsa Yakimova, B. Pecz, Anelia Kakanakova-Georgieva, Ts. Marinova, L. Kassamakova, R. Kakanakov and Erik Janzén
  Improved Ni ohmic contact on n-type 4H-SiC
  Journal of Electronic Materials, 1997, 26(3), 119-122.

Anelia Kakanakova-Georgieva, T. Paskova, Rositsa Yakimova, Christer Hallin, Mikael Syväjärvi, E.P. Trifonova, M. Surtchev and Erik Janzén
  Structural properties of 6H-SiC epilayers grown by two different techniques
  Materials Science and Engineering B, 1997, 46(1-3), 345-348.

Anthologies

Mikael Syväjärvi and Rositsa Yakimova
  Wide band gap materials and new developments
  Research Signpost, 2006.


Chapters in Books

Rositsa Yakimova and Mikael Syväjärvi
  Liquid Phase Epitaxy of SiC
  Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, Wiley, 2007, 179-202.


Rositsa Yakimova, Mikael Syväjärvi, Henrik Jacobson and Erik Janzén
  Some aspects of extended defects formation and their reduction in silicon carbide crystals
  Recent research developments in materials science & engineering. Vol. 1, pt. 1, Trans Research Network, 2003, 619-646.


Conference Articles

F. Giannazzo, I. Deretzis, A. La Magna, S. Di Franco, N. Piluso, P. Fiorenza, F. Roccaforte, P. Schmid, W. Lerch and Rositsa Yakimova
  Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001)
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 2

Jens Eriksson, Donatella Puglisi, Remigijus Vasiliauskas, Anita Lloyd Spetz and Rositsa Yakimova
  Thickness uniformity and electron doping in epitaxial graphene on SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


 Web of Science® Times Cited: 1

Saskia Schimmel, Michl Kaiser, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Jianwu Sun, Rositsa Yakimova, Yi Yu Ou, Hai Yan Ou, Margareta K. Linnarsson, Peter Wellmann and Mikael Syväjärvi
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 1

Valdas Jokubavicius, Ho-Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Towards bulk-like 3C-SiC growth using low off-axis substrates
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Jianwu Sun, Satoshi Kamiyama, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
  Silicon Carbide and Related Materials 2012, 2013.


Remigijus Vasiliauskas, Paulius Malinovskis, Algirdas Mekys, Mikael Syväjärvi, Jurgis Storasta and Rositsa Yakimova
  Polytype Inclusions in Cubic Silicon Carbide
  Silicon Carbide and Related Materials 2012, 2013.


Jianwu Sun, Satoshi Kamiyama, Rositsa Yakimova and Mikael Syväjärvi
  Effect of surface and interface recombination on carrier lifetime in 6H-SiC layers
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Valdas Jokubavicius, Ho Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Yiyu Ou, Valdas Jokubavicius, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and optical stability in growth of fluorescent SiCon low off-axis substrates
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Leif I Johansson, Somsakul Watcharinyanon, A.A. Zakharov, Tihomir Iakimov, Rositsa Yakimova and Chariya Virojanadara
  Detailed studies of graphene grown on C-face SiC
  Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, 2012.


Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells
  2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012.


Alexander Boosalis, Tino Hofmann, Vanya Darakchieva, Rositza Yakimova, Tom Tiwald and Mathias Schubert
  Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC
  MRS Proceedings Volume 1407, 2012.


Vishal Panchal, Tim L. Burnett, Ruth Pearce, Karin Cedergren, Rositza Yakimova, Alexander Tzalenchuk and Olga Kazakova
  Surface Potential Variations in Epitaxial Graphene Devices Investigated by Electrostatic Force Spectroscopy
  Nanotechnology (IEEE-NANO), 2012, 2012.


G. Zoulis, Jianwu Sun, Remigijus Vasiliauskas, J. Lorenzzi, H. Peyre, Mikael Syväjärvi, G. Ferro, S. Juillaguet, Rositza Yakimova and J. Camassel
  Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy
  HETEROSIC and WASMPE 2011, 2012.


 Web of Science® Times Cited: 1

P. Scajev, P. Onufnjevs, G. Manolis, M. Karaliunas, S. Nargelas, N. Jegenyes, J. Lorenzzi, G. Ferro, Milena Beshkova, Remigijus Vasiliauskas, Mikael Syvajärvi, Rositsa Yakimova, M. Kato and K. Jarasionas
  On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures
  HETEROSIC and WASMPE 2011, 2012.


Rositsa Yakimova, Remigijus Vasiliauskas, Jens Eriksson and Mikael Syväjärvi
  Progress in 3C-SiC growth and novel applications
  Materials Science Forum Vol 711, 2012.


 Web of Science® Times Cited: 2  Fulltext PDF

Mikael Syväjärvi, Rositsa Yakimova, M. Iwaya, T. Takeuchi, I. Akasaki and Satoshi Kamiyama
  Growth and light properties of fluorescent SiC for white LEDs
  Materials Science Forum Vols 717 - 720, 2012.


Philip Hens, J. Müller, G. Wagner, Rickard Liljedahl, Rositsa Yakimova, E. Spiecker, P. Wellmann and Mikael Syväjärvi
  Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
  Materials Science Forum Vols 717 - 720, 2012.


Ruth Pearce, Rositsa Yakimova, Johan Eriksson, Lars Hultman, Mike Andersson and Anita Lloyd Spetz
  Development of FETs and resistive devices based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Chariya Virojanadara, Somsaku Watcharinyanon, A. A. Zakharov, Rositsa Yakimova and Leif I. Johansson
  Studies of Li intercalation into epitaxial graphene on SiC(0001)
  Materials Science Forum Vols 717 - 720, 2012.


Leif I. Johansson, Somsakul Watcharinyanon, A. A. Zakharov, Rositsa Yakimova and Chariya Virojanadara
  The registry of graphene layers grown on SiC(000-1)
  Materials Science Forum Vols 717 - 720, 2012.


Valdas Jokubavicius, Björn Lundqvist, Philip Hens, Rickard Liljedahl, Rositza Yakimova, Satoshi Kamiyama and Mikael Syväjärvi
  On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
  ICSCRM2011, 2012.


 Web of Science® Times Cited: 2

Yiyu Ou, Valdas Jokubavicius, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Satoshi Kamiyama, Zhaoyue Lu, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Photoluminescence and Raman spectroscopy characterization of boron and nitrogen-doped 6H silicon carbide
  ICSCRM2011, 2012.


Jianwu Sun, T. Robert, Valdas Jokubavicius, S. Juillaguet, Rositza Yakimova, Mikael Syväjärvi and J. Camassel
  Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates
  ICSCRM2011, 2012.


Ruth Pearce, Rositza Yakimova, Lars Hultman, Mike Andersson and Anita Lloyd Spetz
  Development of FETs based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection
  Proceedings of the International Conference on Silicon Carbide and Related materials, 2011.


Ruth Pearce, Tihomir Iakimov, M Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova
  Towards Optimisation of Epitaxially Grown Graphene Based Sensors for Highly Sensitive Gas Detection
  2010 IEEE Sensors, 2010.


 Web of Science® Times Cited: 1

Ruth Pearce, Elin Becker, A Haglin, Fredrik Söderlind, Per-Olov Käll, Rositsa Yakimova, Magnus Skoglundh and Anita Lloyd Spetz
  Understanding the gas sensor response of ZnO and Ga:ZnO
  IMCS13, 2010.


Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, A. Mantzari, A. Andreadou, J. Lorenzzi, G. Ferro, E.K. Polychroniadis and Rositsa Yakimova
  Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 13

Milena Beshkova, J. Lorenzzi, N. Jegenyes, Jens Birch, Mikael Syväjärvi, G. Ferro and Rositsa Yakimova
  Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 2

Valdas Jokubavicius, Justinas Palisaitis, Remigijus Vasiliauskas, Rositsa Yakimova and Mikael Syväjärvi
  Macrodefects in cubic silicon carbide crystals
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 2  Fulltext PDF

Rositsa Yakimova, Chariya Virojanadara, Daniela Gogova, Mikael Syväjärvi, D. Siche, Krister Larsson and Leif Johansson
  Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010.


 Web of Science® Times Cited: 23  Fulltext PDF

Gholamreza Yazdi, K. Vassilevski, Jose Manuel Cordoba Gallego, Daniela Gogova, I. P. Nikitina, Mikael Syväjärvi, Magnus Odén, N.G. Wright and Rositsa Yakimova
  Free standing AIN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
  Materials Science Forum, Vols. 645-648, 2010.


Ruth Pearce, Fredrik Söderlind, Alexander Hagelin, Per-Olov Käll, Rositsa Yakimova, Anita Lloyd Spetz, Elin Becker and Magnus Skoglundh
  Effect of Water vapour on Gallium doped Zinc Oxide nanoparticle sensor gas response
  IEEE Sensors, 2009, 2009.


Milena Beshkova, Mikael Syväjärvi, Remigijus Vasiliauskas, Jens Birch and Rositsa Yakimova
  Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
  ECSCRM2009,2009, 2009.


 Web of Science® Times Cited: 6

S.P. Lebedev, A.A. Lebedev, P.L. Abramov, E.V. Bogdanova, D.K. Nel¿son, G.A. Oganesyan, A.S. Tregubova and Rositsa Yakimova
  P-type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
  ECSCRM2008,2008, 2009.


Chariya Virojanadara, Mikael Syväjärvi, Rositsa Yakimova, Leif Johansson, A.A. Zakharov and T. Balasubramanian
  Single Layer Graphene Growth on 6H-SiC(0001)
  , 2009.


Philip Hens, Mikael Syväjärvi, F. Oehlschläger, P. Wellman and Rositsa Yakimova
  P- and n-type doping in SiC sublimation epitaxy using highly doped substrates
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 1

V.I. Sankin, P.P. Shkrebiy, A.A. Lepneva, A.G. Ostroumov and Rositsa Yakimova
  Features of hot hole transport in 6H-SiC
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 1

Milena Beshkova, Mikael Syväjärvi, Remigijus Vasiliauskas, Jens Birch and Rositsa Yakimova
  Properties of 3C-SiC Grown by Sublimation Epitaxy
  ECSCRM2008,2008, 2009.


Remigijus Vasiliauskas, Mikael Syväjärvi, Milena Beshkova and Rositsa Yakimova
  Two-dimensional nucleation of cubic and 6H silicon carbide
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 9

M. Mikelsen, U. Grossner, J. Bleka, E. Monakhov, B. Svensson, Rositsa Yakimova, Anne Henry, Erik Janzén and A. Lebedev
  Carrier Removal in Electron Irradiated 4H and 6H SiC
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 4

Anita Lloyd Spetz, Ruth Pearce, Linnea Hedin, Volodymyr Khranovskyy, Fredrik Söderlind, Per-Olov Käll, Rositsa Yakimova and Kajsa Uvdal
  New transducer material concepts for biosensors and surface functionalization
  Smart Sensors, Actuators,and MEMS IV, 2009.


  Fulltext PDF

K. Neimontas, K. Jarasiunas, Rositsa Yakimova, Mikael Syväjärvi and G. Ferro
  Characterization of electronic properties of different SiC polytypes by all-optical means
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Q.X. Zhao, Magnus Willander, M.N. Morishita, T. Ohshirma, H. Itoh, Erik Janzén and Rositsa Yakimova
  Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance
  Journal of Crystal Growth, Vol. 310, 2008.


 Web of Science® Times Cited: 1

Anita Lloyd Spetz, Jens Eriksson, S Ehrler, Volodymyr Khranovskyy, Rositsa Yakimova and Per-Olov Käll
  Gas sensors based on ZnO nanopraticels or film: A comparison
  IMCS 12,2008, 2008.


Volodymyr Khranovskyy, G Lashkarev, V Lazorenko, Jens Eriksson, Anita Lloyd Spetz and Rositsa Yakimova
  Investigation of oxygen exposure effect on electrical properties of ZnO based nanostructures films - a premise for sensor design
  Sensors electronics and Microsystem Technology Conference,2008, 2008.


V Khranovskyy, I Tsiaoussis, Mikael Syväjärvi, Arvid Larsson, Per-Olof Holtz and Rositsa Yakimova
  Size tuning of uniformly oriented ZnO nanostructures
  Nanotech 2008,2008, 2008.


Volodymyr Khranovskyy, Jens Eriksson, Anita Lloyd Spetz and Rositsa Yakimova
  Oxygen absorption effect on the sensitivity and material stability of ZnO nanostructured films
  IEEE Sensor Conference,2008, 2008.


Rositsa Yakimova and Bo Monemar
  Preface
  First International Symposium on Growth of Nitrides ISGN-1,2006, 2007.


Anita Lloyd Spetz, Kristina Buchholt, Doina Lutic, M Strand, Per-Olov Käll, Mehri Sanati and Rositsa Yakimova
  Multifunctional chemical sensors based on wide band gap materials
  MRS Spring Meeting,2007, 2007.


E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, S. Greulich-Weber, U. Gerstmann, A. Pöppl, J. Hoentsch, E. Rauls, Y. Rozentzveig, E.N. Mokhov, Mikael Syväjärvi and Rositsa Yakimova
  EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 6

M. Wagner, E. Mustafa, S. Hahn, Mikael Syväjärvi, Rositsa Yakimova, S. Jang, S.A. Sakwe and P.J. Wellmann
  Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 1

Mikael Syväjärvi, N. Sritirawisarn and Rositsa Yakimova
  Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 4

Rodrigo Jr Petoral, Gholamreza Yazdi, Cecilia Vahlberg, Mikael Syväjärvi, Anita Lloyd Spetz, Kajsa Uvdal and Rositsa Yakimova
  Surface Functionalization of SiC for Biosensor Applications
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 2

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Novel approach to AlN growth for power device applications
  WASMPE 2007,2007, 2007.


V.S. Kiselov, E.N. Kalabukhova, S.N. Lukin, A.A. Sitnikov, V.A. Yukhymchyk and Rositsa Yakimova
  Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
  ECSCRM 2006,2006, 2007.


Alexander Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nelson, B.S. Razbirin, M.P. Scheglov, A.S. Tregubova, Mikael Syväjärvi and Rositsa Yakimova
  Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 7

Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 5

Gholamreza Yazdi, Mikael Syväjärvi, Remigijus Vasiliauskas and Rositsa Yakimova
  Employing discontinuous and continuous growth modes for preparation of AlN nanostructures on SiC substrates
  ECSCRM 2006, Newcastle, UK: Materials Science Forum Vols. 556-557, 2007.


M. Mikelsen, E.V. Monakhov, J.H. Bleka, Rositsa Yakimova, Anne Henry, Erik Janzén, Alexander Lebedev and B.G. Svensson
  Irradiation Induced Carrier Loss in 4H and 6H SiC
  Materials Science Forum, Vols. 556-557, 2006.


Rositsa Yakimova, A.A. Lebedev, A.M. Ivanov, N.B. Strokan and Mikael Syväjärvi
  The limit of SiC detector energy resolution in ions spectrometry
  Materials Science Forum, Vols. 527-529, 2006.


V.I. Sankin and Rositsa Yakimova
  Wannier-Stark ladder and negative differential conductance in 4H-SiC
  Materials Science Forum, Vols. 527-529, 2006.


Mikael Syväjärvi, Rositsa Yakimova, A. Arjunan, E. Toupitsyn and T.S. Sudarshan
  Stability of thick layers grown on (1-100) and (11-20) orientations of 4H-SiC
  Materials Science Forum, Vols. 527-529, 2006.


Rositsa Yakimova, Gholam Reza Yazdi, N. Sritirawisarn and Mikael Syväjärvi
  Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates
  Materials Science Forum, Vols. 527-529, 2006.


Cecilia Vahlberg, Gholam Reza Yazdi, V. Khranovskyy, Rodrigo Jr Petoral, Mikael Syväjärvi, Kajsa Uvdal, Anita Lloyd-Spets and Rositsa Yakimova
  Surface engineering of functional materials for biosensors
  IEEE SENSORS 2005,2005, 2006.


Anita Lloyd-Spets, Georg Steinhoff, V. Khranovsky, Mike Andersson, Kristina Buchholt, M. Eickhoff and Rositsa Yakimova
  Multisensing by Gas Sensors
  Proc. Eurosensors XX,2006, 2006.


Anita Lloyd-Spets, Rodrigo Jr Petoral, Gholam Reza Yazdi, Cecilia Vahlberg, Mikael Syväjärvi, Kajsa Uvdal and Rositsa Yakimova
  Surface functioanlization of SiC for biosensor applications
  Proc. ECSCRM 2006,2006, 2006.


Anita Lloyd-Spets, Georg Steinhoff, Rodrigo Jr Petoral, Kajsa Uvdal, Martin Eickhoff and Rositsa Yakimova
  New Materials for Multifunctional Chemical- and Biosensors
  MST06 Chemically Active Ceramic Nano-Particles and Nano-Structures,2006, 2006.


Anita Lloyd-Spets, Rodrigo Jr Petoral, Kajsa Uvdal, Cecilia Vahlberg, Rositsa Yakimova, G. Steinhoff, B. Baur, T. Wassner and M. Eickhoff
  Chemical functionalization of GaN and ZnO surfaces
  Proc. IMCS11,2006, 2006.


EO Sveinbjornsson, HO Olafsson, G Gudjonsson, F Allerstam, Patrik Nilsson, Mikael Syväjärvi, Rositsa Yakimova, Christer Hallin, T Rodle and R Jos
  High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 6

A Paskaleva, Rafal Ciechonski, Mikael Syväjärvi, E Atanassova and Rositsa Yakimova
  Characterization of 4H-SiC MOS structures with Al2O3 as gate dielectric
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 1

IL Shulpina, NS Savkina, VB Shuman, VV Ratnikov, Mikael Syväjärvi and Rositsa Yakimova
  X-ray diffraction analysis of epigrowth on porous 4H-SiC substrates
  Materials Science Forum, Vols. 483-485, 2005.


Rositsa Yakimova and Mikael Syväjärvi
  Advances in SiC thick epilayer growth for power devices and sensors
  WASMPE 2005,2005, 2005.


Mikael Syväjärvi, L. Nasi, Gholamreza Yazdi, G. Salviati, Morteza Izadifard, Irina Buyanova, Weimin Chen and Rositsa Yakimova
  Formation of ferromagnetic SiC: Mn phases
  Materials Science Forum, Vols. 483-485, 2005.


Daniela Gogova, S. Kanev, Bo Monemar, Ivan Gueorguiev Ivanov, Rositsa Yakimova and E. Talik
  Growth and characterization of free-standing HVPE GaN on two-step epitaxial lateral overgrown GaN template
  , 2005.


Rositsa Yakimova
  Sublimation growth of AlN crystals: growth mode and structure evolution
  International Workshop on Bulk Nitride Semiconductors III,2004, 2005.


Cecilia Vahlberg, G. R. Yazdi, V. Khranovsky, Mikael Syväjärvi, Kajsa Uvdal, Anita Lloyd-Spets and Rositsa Yakimova
  Surface engineering of functional materials for biosensors
  IEEE Sensors 2005,2005, 2005.


N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.A. Lebedev, V.V. Kozlovski, Mikael Syväjärvi and Rositsa Yakimova
  Investigation of the SiC transistor and diode nuclear detectors at 8MeV proton irradiation
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 4

I.L. Shulpina, N.S. Savkina, V.B. Shuman, V.V. Ratnikov, Mikael Syväjärvi and Rositsa Yakimova
  X-Ray Diffraction Analysis of Epigrowth on Porous SiC Substrates
  Materials Science Forum, Vols. 483-485, 2005.


S. Dannefaer, V. Avalos, Mikael Syväjärvi and Rositsa Yakimova
  The role of nitrogen in the annealing of vacancies in 4H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 2

Anita Lloyd-Spets, Kajsa Uvdal, Martin Eickhoff, Ilia Katardjiev and Rositsa Yakimova
  Wide band-gap materials for chemical and biosensors
  International Symposium for Advanced Sensor Technologies,2005, 2005.


Rafal Ciechonski, Mikael Syväjärvi, Samuele Porro and Rositsa Yakimova
  Evaluation of On-state Resistance and Boron-related Levels in n-type 4H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 2

SY Davydov, NS Savkina, Alexander Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  Simple model for calculation of SiC epitaxial layers growth rate in vacuum.
  Materials Science Forum, Vols. 457-460, 2004.


Rositsa Yakimova, Mikael Syväjärvi, Rafal Ciechonski and Qamar Ul Wahab
  Growth of device quality 4H-SiC by high velocity epitaxy
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 4

D Ziane, JM Bluet, G Guillot, P Godignon, J Monserrat, Rafal Ciechonski, Mikael Syväjärvi, Rositsa Yakimova, L Chen and P Mawby
  Characterizations of SiC/SiO2 interface quality toward high power MOSFETs realization
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 7

Mikael Syväjärvi, V. Stanciu, Morteza Izadifard, Weimin Chen, Irina Buyanova, P. Svedlindh and Rositsa Yakimova
  As-grown 4H-SiC epilayers with magnetic properties
  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004.


 Web of Science® Times Cited: 14

Milena Beshkova, Z Zakhariev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Properties of AlN layers grown by sublimation epitaxy
  Materials Science Forum, Vols. 433-436, 2003.


AM Ivanov, NB Strokan, DV Davydov, NS Savkina, AM Strelchuk, Alexander Lebedev and Rositsa Yakimova
  P-type 6H-SiC films in the creation of triode structures for low ionization radiation
  Materials Science Forum, Vols. 433-436, 2003.


Alexander Lebedev, VV Kozlovski, NB Strokan, DV Davydov, AM Ivanov, AM Strel'chuk and Rositsa Yakimova
  Radiation hardness of silicon carbide
  Materials Science Forum, Vols. 433-436, 2003.


L Kasamakova-Kolaklieva, Rositsa Yakimova, R Kakanakov, Anelia Kakanakova-Georgieva, Mikael Syväjärvi and Erik Janzén
  Characteristics of Ni Schottky contacts on compensated 4H-SiC layers
  Materials Science Forum, Vols. 433-436, 2003.


V Bikbajevas, V Grivickas, M Stolzer, E Velmre, A Udal, P Grivickas, Mikael Syväjärvi and Rositsa Yakimova
  Impact of phonon drag effect on Seebeck coefficient in p-6H-SiC: Experiment and simulation
  Materials Science Forum, Vols. 433-436, 2003.


Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, AO Okunev, VE Udal'tsov and Erik Janzén
  Orientation-dependent defect formation in silicon carbide epitaxial layers
  Materials Science Forum, Vols. 433-436, 2003.


N Vouroutzis, Mikael Syväjärvi, J Stoemenos and Rositsa Yakimova
  Characteristics of planar defects in shallow trenches related to the presence of micropipes
  Materials Science Forum, Vols. 433-436, 2003.


H Jacobson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositsa Yakimova and Erik Janzén
  Doping-related strain in n-doped 4H-SiC crystals
  Materials Science Forum, Vols. 433-436, 2003.


S Dannefaer, V Avalos, Mikael Syväjärvi and Rositsa Yakimova
  Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation
  Materials Science Forum, Vols. 433-436, 2003.


Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, D Davydov, Alexander Lebedev and Erik Janzén
  Origin and behaviour of deep levels in sublimation growth of 4H-SiC layers
  Materials Science Forum, Vols. 433-436, 2003.


Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, Anelia Kakanakova-Georgieva, Liutauras Storasta and Erik Janzén
  Deep levels in 4H-SiC layers grown by sublimation epitaxy
  Optical Materials, Vol. 23, 2003.


 Web of Science® Times Cited: 1

Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski and Erik Janzén
  Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles
  Diam. relat. Mater. Vol.12, 2003.


 Web of Science® Times Cited: 4

Rafal Ciechonski, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Effect of Ambient on 4H-SiC Bulk Crystals grown by Sublimation
  Materials Science Forum, Vols. 433-436, 2003.


Anelia Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositsa Yakimova and Erik Janzén
  Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

S Nakagomi, H Shinobu, Lars Unéus, Ingemar Lundström, Lars-Gunnar Ekedahl, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén and Anita Lloyd-Spets
  Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Lars Unéus, S Nakagomi, M Linnarsson, Mona Jensen, BG Svensson, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-Gunnar Ekedahl, I Lunstrom and Anita Lloyd-Spets
  The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

A Syrkin, V Dmitriev, Rositsa Yakimova, Anne Henry and Erik Janzén
  Power Schottky and p-n diodes on SiC epi-wafers with reduced micropipe density
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

L Kassamakova, R Kakanakov, Rositsa Yakimova, Anelia Kakanakova-Georgieva, Mikael Syväjärvi, Lars Wilzén and Erik Janzén
  Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

N Vouroutzis, Rositsa Yakimova, Mikael Syväjärvi, H Jacobson, J Stoemenos and Erik Janzén
  Behavior of micropipes during growth in 4H-SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 7

Rositsa Yakimova, H Jacobson, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Tihomir Iakimov, Chariya Virojanadara, Leif Johansson and Erik Janzén
  Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

Anelia Kakanakova-Georgieva, Rositsa Yakimova, J Zhang, Liutauras Storasta, Mikael Syväjärvi and Erik Janzén
  Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

H Jacobson, Rositsa Yakimova, P Raback, Mikael Syväjärvi, Jens Birch and Erik Janzén
  Lateral enlargement of silicon carbide crystals
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

Mikael Syväjärvi, Rositsa Yakimova, Anelia Kakanakova-Georgieva, S.G. Sridhara, M.K. Linnarsson and Erik Janzén
  Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy
  J. Cryst. Growth, Vols. 237-239, 2002.


 Web of Science® Times Cited: 6

Rositsa Yakimova, Tihomir Iakimov, Anelia Kakanakova-Gueorguie, Mikael Syväjärvi, Henrik Jacobson, Chariya Virojanadara, Leif Johansson and Erik Janzén
  Effect of High Temperature Annealing on Surface and Bulk Characteristics of 4H-SiC
  <em>Proc. of the 43rd Electronic Material Conference</em>, 2001.


Rositsa Yakimova, Mikael Syväjärvi, M. Pons and Erik Janzén
  Influence of gravity on defect formation in homoepitaxial layers of SiC grown by sublimation
  ESA SP-454, 2001.


Mikael Syväjärvi, Rositsa Yakimova, Anne Henry, Anelia Kakanakova-Georgieva, M Linnarsson and Erik Janzén
  Optical properties of aluminium and nitrogen in compensated 4H-SiC epitaxial layers
  Materials Research Society Symposium Proceedings, Vol. 640, 2001.


Rositsa Yakimova, Mikael Syväjärvi, H Jacobsson, Anelia Kakanakova-Georgieva, S Rendakova, V Dmitriev and Erik Janzén
  Defect evolution in SiC sublimation epitaxy layers grown on LPE buffers with reduced micropipe density
  Materials Research Society Symposium Proceedings, Vol. 640, 2001.


M Kayambaki, K Zekentes, K Tsagaraki, E Pernot and Rositsa Yakimova
  Electrochemical characterization of p-type hexagonal SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 3

MK Linnarsson, Per Persson, H Bleichner, MS Janson, U Zimmermann, H Andersson, S Karlsson, Rositsa Yakimova, Lars Hultman and BG Svensson
  Precipitate formation in heavily Al-doped 4H-SiC layers
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 4

V Grivickas, M Stolzer, E Velmre, A Udal, P Grivickas, Mikael Syväjärvi, Rositsa Yakimova and V Bikbajevas
  Thermopower measurements in 4H-SiC and theoretical calculations considering the phonon drag effect
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 4

Anne Henry, Björn Magnusson, MK Linnarsson, A Ellison, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Presence of hydrogen in SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 8

Henrik Jacobsson, Rositsa Yakimova, Mikael Syväjärvi, Jens Birch, T Tuomi and Erik Janzén
  High-resolution XRD evaluation of thick 4H-SiC epitaxial layers
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 5

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson and Erik Janzén
  Growth of 3C-SiC using off-oriented 6H-SiC substrates
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 8

P. Grivickas, A. Galeckas, J. Linnros, Mikael Syväjärvi, Rositsa Yakimova, V. Grivickas and J.A. Tellefsen
  Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy
  Materials Science in Semiconductor Processing, Vol. 4, 2001.


 Web of Science® Times Cited: 14

Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Erik Janzén
  Stress related morphological defects in SiC epitaxial layers
  Diam. Relat. Mater., Vol. 10, 2001.


 Web of Science® Times Cited: 2

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, Anelia Kakanakova-Georgieva, P. Raback and Erik Janzén
  Growth of silicon carbide: Process-related defects
  Appl. Surf. Sci., Vol. 184, 2001.


 Web of Science® Times Cited: 11

Anelia Kakanakova-Georgieva, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Behavior of background impurities in thick 4H-SiC epitaxial layers
  Appl. Surf. Sci., Vol. 184, 2001.


 Web of Science® Times Cited: 4

D.V. Davidov, A.A. Lebedev, N.S. Savkina, A.S. Tregubova, M.P. Scheglov, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Deep centers connected with structural and radiation defects in n-SiC epilayers
  <em>Proc. III Intern. Seminar on SiC and related Materials</em>, 2000.


Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson and Erik Janzén
  High growth rate epitaxy of 4H-SiC layers with improved crystal quality
  <em>Proc. III Intern. Seminar on SiC and Related Materials</em>, 2000.


Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson and Erik Janzén
  Crystal perfection aspects of silicon carbide growth
  <em>Proc. III Intern. Seminar on SiC and Related Materials</em>, 2000.


Mikael Syväjärvi, Rositsa Yakimova, Tihomir Iakimov and Erik Janzén
  Characterization of anisotropic step-bunching on as-grown SiC surfaces
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 3

Rositsa Yakimova, Mikael Syväjärvi, S Rendakova, VA Dimitriev, Anne Henry and Erik Janzén
  Micropipe healing in liquid phase epitaxial growth of SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 23

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson, MK Linnarsson, Anne Henry and Erik Janzén
  High growth rate epitaxy of thick 4H-SiC layers
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6

P Raback, Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, R Nieminen and Erik Janzén
  Considerations on the crystal morphology in the sublimation growth of SiC
  Materials Science Forum, Vols. 338-343, 2000.


Rositsa Yakimova and Erik Janzén
  Current status and advances in the growth of SiC
  Diam. Relat. Mater., Vol. 9, 2000.


 Web of Science® Times Cited: 34

Ph.D. Theses

Remigijus Vasiliauskas
  Sublimation Growth and Performance of Cubic Silicon Carbide
  2012.


  Fulltext PDF

Gholamreza Yazdi
  Growth and Characterization of AlN: From Nano Structures to Bulk Material
  2008.


  Fulltext PDF

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